RECTRON BAV99 Datasheet
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
SMALL SIGNAL DIODE
FEATURES
* Silicon epitaxial planar diode
* Fast switching
* Surface mounting device
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
* Weight : apporx. 0.008g
)
3.00
(
.118
)
2.80
(
.110
)
2.00
(
.079
)
1.02
(
.040
)
1.80
(
.071
BAV99
SOT-23
)
0.88
(B)
(A)
(
.035
)
)
0.38
0.42
(
(
.015
.017
(C)
(A)
(C)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Repetitive Peak Reverse Voltage
Forward Continuous Current at TA=25 oC
Repetitive Peak Forward Current at TA=25 oC
Surge Forward Current at tp < 1 S, at TA=25 oC
Total Power Dissipation
Junction Temperature
Storage Temperature Range
(At TA = 25oC unless otherwise noted)
RATINGS
SYMBOL
V
RRM
I
F
I
FRM
I
FSM
P
D
T
J
T
STG
)
.055 (1.40
)
.047 (1.20
.045 (1.15
.033 (0.85
Dimensions in inches and (millimeters)
.102 (2.60
.094 (2.40)
)
)
BAV99
70
150
500
250
125
-65 to + 150
)
R0.05
(
.002
.028 (0.70
.020 (0.50
)
)
0.14
(
.006
)
0.08
(
.003
)
)
UNITS
Volts
mA
mA
mA1000
mW
0
C
0
C
2001-12
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Reverse Breakdown Voltage
Forward Voltage
(At TA = 25oC unless otherwise noted)
SYMBOL
V(BR)R
VF(1)
VF(2)
VF(3)
Value
70
715
855
1000
Unit Testing Condition
V
Ir=100uA
mV
mV
mV
If=1mA
If=10mA
IF=50mA
Reverse Current
Total Capacitance
Reverse Recovery Time
CHARACTERISTIC CURVES
FIG. 1 - FORWARD CURRENT
& FORWARD VOLTAGE
500
400
300
200
100
FORWARD CURRENT, iF(mA)
0
0 400 800 1200
FORWARD VOLTAGE,VF (mV )
1600
VF(4)
2000
Trr
1250 mV
I
R
C
T
2.5
1.5
6
uA
pF
nS
If=150mA
Vr=70V
Vr=0V,F=1MHZ
If=Ir=10mA,RL=100 ohm, measured at ir=1mA
FIG. 2 - DIODE CAPACITANCE
200
100
60
40
20
10
6
4
2
DIODE CAPACITANCE,Cd (pF)
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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