RECTRON BAS21 Datasheet

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

SURFACE MOUNT DIODE

Absolute Maximum Ratings (Ta=25°C)

Items Symbol Ratings Unit
Reverse Voltage VRRM 200 V
Reverse Recovery

Time
Forward Voltage
@ If = 100 mA
Forward Current
Junction Temp. Tj -55 to 150
Storage Temp. Tstg -55 to 150

trr 75 ns
VF 1.0 V

(1)

IF 200 mA

BAS21

32-TOS32-TOS

32-TOS32-TOS

32-TOS

(1)

C

°

C

°

(2)

(3)

Mechanical Data

Items Materials
Package SOT-23
Lead Frame 42 Alloy
Lead Finish Solder Plating
Bond Wire Au
Mold Resin Epoxy
Chip Silicon

Electrical Characteristics (Ta=25°C)

Ratings Symbol Ratings Unit
Repetitive Peak Reverse Voltage ;

Repetitive Peak Forward Current
Forward Voltage

IF= 100mA
IF= 200mA
Reverse Current
VR= 200V
VR= 200V (Tj= 150°C)

Reverse Recovery Time IF= IR= 10mA; RL= 100
Thermal Resistance (junction to ambient) RΘJA 500

Notes:

1. Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm

2. At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V.

IR= 100uA (2)

Ω

VRRM 250 V

IFRM 625 mA

VF

IR

trr

1.0

1.25 V

0.10
100

75

1. ANODE

2. NC

3. CATHODE

(UNITS: mm)

°

uA

ns

C/W

RECTRON USA

1315 John Reed Court, Industry, CA 91745

Tel: [phone] Fax: [phone]

www.rectron.com