RECTRON 1N914B Datasheet
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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N914B SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C)
Items S
Reverse Voltage VR 75 V
Reverse Recovery
Time
Power Dissipation
3.33mW/°C
Forward Current IF 300 mA
Junction Temp. Tj -65 to 175°C
Storage Temp. Tstg -65 to 175°C
25°C
mbol Ratings Unit
trr 4 ns
P 500 mW
Dimensions (DO-35
DO-35
26 MIN
4.2
max.
1N914B
)
0.457
0.559
DIA.
Mechanical Data
Items Materials
Package DO-35
Case Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip Glass Passivated
Electrical Characteristics (Ta=25°C)
Ratings Symbol Ratings Unit
Minimum Breakdown Voltage
IR= 5.0uA
IR= 100uA
Peak Forward Surge Current PW= 1sec. IFsurge 0.5 A
Maximum Forward Voltage
IF= 100mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Ω
BV
VF
IR
Cj
trr
26 MIN
2.0
DIA.
max.
Dimensions in millimeters
75
100
1.0
0.025
5.0
50
4
4
V
V
uA
pF
ns
1315 John Reed Court, Industry, CA 91745
RECTRON USA
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
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