RECTRON 1N4151 Datasheet

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

1N4151 SIGNAL DIODE

Absolute Maximum Ratings (Ta=25°C)

Items S
Reverse Voltage VR 50 V
Reverse Recovery

Time
Power Dissipation

3.33mW/°C
Forward Current IF 300 mA
Junction Temp. Tj -65 to 175°C
Storage Temp. Tstg -65 to 175°C

25°C

mbol Ratings Unit

trr 2 ns

P 500 mW

Dimensions (DO-35

DO-35

26 MIN

4.2
max.

1N4151

)

0.457

0.559

DIA.

Mechanical Data

Items Materials
Package DO-35
Case Hermetically sealed glass
Lead/Finish Double stud/Solder P lating
Chip Glass Passivated

Electrical Characteristics (Ta=25°C)

Ratings Symbol Ratings Unit
Breakdown Voltage

IR= 5.0uA
Peak Forward Surge Current PW= 1sec. IFsurge 1.0 A
Maximum Forward Voltage
IF= 50mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100

Ω

BV

VF

IR

Cj
trr

26 MIN

50

2.0
DIA.

max.

Dimensions in millimeters

75

1.0

0.050

2
2

V

V

uA

pF

ns

RECTRON USA

1315 John Reed Court, Industry, CA 91745

Tel: [phone] Fax: [phone]

www.rectron.com