RECTRON 1N4150 Datasheet

RECTRON

SEMICONDUCTOR

TEC H NIC A L SPE C IFIC A T ION

1N4150

1N4150 S IGNAL DIOD E

Dimensions (DO-35

Absolute Maximum Ratings (Ta=25°C)

Items Symbol Ratings Unit
Reverse Voltage VR 50 V
Revers e Rec ove ry

trr 4 ns
Time
Power Dissipation

3.33mW /°C (25°C)

P

500 mW

Forward Current IF 200 mA
Junction Temp. Tj -65 to 200
Storage Temp. Tstg -65 to 200

C

°

C

°

Mechanical Data

Items Materials
Package DO-35
Case Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip Glass Passivated

Electrical Characteristics (Ta=25°C)

Ratings Symbol Ratings Unit
Breakdown Voltage

IR= 5.0uA
Peak Forward Surge Current PW= 1sec. IFsurge 1.0 A
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR = 0 , f = 1 MHz
Max Reverse Recovery Time
IF= -IR= 10-200mA, to 0.1 IF

DO-35

BV

VF

)

26 MIN

4.2
max.

26 MIN

0.457
DIA.

0.559

2.0
DIA.

max.

Dim en sion s in m i llim ete rs

50

1.0

IR

0.10

1 0 0

Cj

2.5

trr

4

V

V

uA

pF

ns

RECTRON USA

1315 John Reed Court, Industry, CA 91745

Tel: [phone] Fax: [phone]

www.rectron.com