RECTRON 1H8, 1H7, 1H6, 1H5P, 1H5 Datasheet

RECTRON

.787 (20.0

)

MIN.

.106 (2.7

)

.126 (3.2

)

.787 (20.0

)

MIN.

.102 (2.6

)

.091 (2.3

)

DIA.

.025 (0.65

)

.021 (0.55

)

DIA.

SEMICONDUCTOR

TECHNICAL SPECIFICA TION

HIGH EFFICIENCY RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES

* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High current capability
* High speed switching
* High surge capability
* High reliability

MECHANICAL DATA

* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.12 gram

1H1

THRU

1H8

R-1

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

MAXIMUM RATINGS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current

at TA= 25oC
Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current

at Rated DC Blocking Voltage TA = 25oC
Maximum Full Load Reverse Current

Average, Full Cycle .375” (9.5mm) lead length at TL = 55oC
Maximum Reverse Recovery Time (Note 1)

NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A

2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts

(At TA = 25oC unless otherwise noted)

RATINGS

(At TA = 25oC unless otherwise noted)

CHARACTERISTICS

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

C

J

TJ, T

STG

SYMBOL

V

F

I

R

trr

Dimensions in inches and (millimeters)

1H1 1H2 UNITS

50
35
50

1H1 1H2 1H3 1H4 1H5 1H6 1H7 UNITS1H8

1H3 1H4 1H5

100

200

300

15

50

210
300

-65 to + 150

400
280
400

25

5.0

100

70

140

100

200

1.0 1.7

1H5P

400
280
400

1H5P

1.01.3

1H6 1H81H7

600
420
600

800
560
800

12

75

1000

700

1000

Volts
Volts
Volts

Amps1.0

Amps

pF

0

C

Volts

uAmps

uAmps

nSec

2001-5

RATING AND CHARACTERISTIC CURVES

(

1H1 THRU 1H8

)

FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50
NONINDUCTIVE10NONINDUCTIVE

( + )

25 Vdc
(approx)

( - )

NOTES:

D.U.T

1
NON­INDUCTIVE

1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.

2. Rise Time = 10ns max. Source Impedance =
50 ohms.

OSCILLOSCOPE

(NOTE 1)

FIG. 3 - TYPICAL REVERSE CHARACTERISTICS

100

10

TJ = 150

TJ = 100

1.0

TJ = 25

.1

INSTANTANEOUS REVERSE CURRENT, (uA)

.01

400 20 60 80 100 120 140

( - )

PULSE

GENERATOR

(NOTE 2)

( + )

+0.5A

-0.25A

-1.0A

trr

0

1cm

SET TIME BASE FOR
10/20 ns/cm

FIG. 4 - TYPICAL INSTANTANEOUS FORWARD

10

1.0

.1

.01

INSTANTANEOUS FORWARD CURRENT, (A)

.001

0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE

2.0

Single Phase
Half Wave 60Hz
Resistive or

1.0

0

0 25 50 75 100125150175

AVERAGE FORWARD CURENT, (A)

AMBIENT TEMPERATURE ( )

Inductive Load

CHARACTERISTICS

300/400V

50/100/200V

600/800/1000V

TJ = 25

Pulse Width = 300uS
1% Duty Cycle

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

35
30
25

8.3ms Single Half Sine-Wave
(

JEDEC Method

)

20
15
10

5
0

PEAK FORWARD SURGE CURRENT, (A)

1 2 5 10 20 50 100

NUMBER OF CYCLES AT 60Hz

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

200
100

60
40

20
10

6

TJ = 25

1H1~1H5

1H6~1H8

4
2

JUNCTION CAPACITANCE, (pF)

1

.1 .2 .4 1.0 2 4 10 20 40 100

REVERSE VOLTAGE, ( V )

RECTRON