RECTRON 1F7G, 1F6G, 1F5G, 1F4G, 1F3G Datasheet

RECTRON

.787 (20.0

)

MIN.

.106 (2.7

)

.126 (3.2

)

.787 (20.0

)

MIN.

.102 (2.6

)

.091 (2.3

)

DIA.

.025 (0.65

)

.021 (0.55

)

DIA.

SEMICONDUCTOR

TECHNICAL SPECIFICA TION

FAST RECOVERY

GLASS PASSIVATED RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES

* Fast switching
* Low leakage
* Low forward voltage drop
* High current capability
* High currenf surge
* High reliability
* Glass passivated junction

MECHANICAL DATA

* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.19 gram

1F1G

THRU

1F7G

R-1

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current

at TA = 25oC
Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage at 1.0A DC Volts
Maximum DC Reverse Current

at Rated DC Blocking Voltage TA = 25oC
Maximum Full Load Reverse Current Full Cycle Average,

.375” (9.5mm) lead length at TL = 55oC
Maximum Reverse Recovery Time (Note 1)

NOTES : 1. Reverse Recovery Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A

2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts

(At TA = 25oC unless otherwise noted)

RATINGS

(At TA = 25oC unless otherwise noted)

CHARACTERISTICS

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

C

J

TJ, T

STG

SYMBOL

V

F

I

R

trr

1F1G 1F2G 1F3G 1F4G 1F5G 1F6G 1F7G UNITS

50 100 400 800 1000
35
50

1F1G 1F2G 1F3G 1F4G 1F5G 1F6G 1F7G UNITS

200

70

140

100

200

-65 to + 175

150 250 500

280
400

1.0

25
15

1.3

5.0

100

600
420
600

560
800

700

1000

Volts
Volts
Volts

Amps

Amps

pF

0

C

uAmps

uAmps

nSec

2001-5

RATING AND CHARACTERISTIC CURVES

(

1F1G THRU 1F7G

)

FIG. 1 - TYPICAL FORWARD CURRENT

DERATING CURVE

1.0

.8

.6

.4

Single Phase
Half Wave 60Hz

.2

Resistive or
Inductive Load

0

AVERAGE FORWARD CURRENT, (A)

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE, ( )

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS
20
10

3.0

TJ = 25

1.0

0.3

0.1

.03
.01

INSTANTANEOUS FORWARD CURRENT, (A)

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Pulse Width=300uS
1% Duty Cycle

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

200

100

8.3ms Single Half Sine-Wave
(JEDED Method)

50
30

CURRENT, (A)

20

PEAK FORWARD SURGE

10

1 5 10 50 100

NUMBER OF CYCLES AT 60Hz

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

10

6
4

2

TJ = 50

1.0
.6

.4
.2

TJ = 25

.1

.06
.04

.02
.01

INSTANTANEOUS REVERSE CURRENT, (uA)

0 20 40 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG. 5 - TYPICAL JUNCTION CAPACITANCE
200
100

60
40

20
10

6

TJ = 25

4
2

JUNCTION CAPACITANCE, (pF)

1

.1 .2 .4 1.0 2 4 10 20 40 100

REVERSE VOLTAGE, ( V )

FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE

RECOVERY TIME CHARACTERISTIC

50
NONINDUCTIVE10NONINDUCTIVE

D.U.T

( + )

25 Vdc
(approx)

( - )

1
NON­INDUCTIVE

1 Rise Time = 7ns max. Input Impedance =

NOTES:

1 megohm. 22pF.

2. Rise Time = 10ns max. Souce Impedance =
50 ohms.

OSCILLOSCOPE

(NOTE 1)

+0.5A

( - )

PULSE

GENERATOR

(NOTE 2)

( + )

-0.25A

-1.0A

RECTRON

trr

0

1cm

SET TIME BASE FOR
50/100 ns/cm