Page 1
PNP Silicon Planar Epitaxial Transistors
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
BC856
BC857
BC858
Unit: inch (mm)
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emmitter Voltage (+V
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - Peak
Total power dissipation up to
T
= 60 oC
amb
Storge Temperature
Junction Temperature
BE
= 1V)
SYMBOL UNITS
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
EM
I
BM
P
**
tot
Tstg
Tj 150
BC856
80 50 30
65 45
Thermal Resistance
From junction to tab R
From tab to soldering points R
From soldering points to ambient R
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
th(j-t)
th(t-s)
** 90
th(s-a)
BC857 BC858
V
V80 50 30
30
V
5V
100
200
200
200
250
-55 to +150
mA
mA
mA
mW
o
C
o
C
60
280
K/W
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Page 2
Electrical Characteristics (at Ta=25 oC unless otherwise specified)
BC856
BC857
BC858
DESCRIPTION
Collector Cut Off Current
Base Emitter On Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Knee Voltage
DC Current Gain
Collector Capacitance
Transition Frequency
Small Signal Current Gain
Noise Figure
*V
decreases by about 2mV/K with increase temperature.
BE (on)
***V
decreases by about 1.7mV/K with increase temperature.
BE (Sat)
SYMBOL UNITS
I
CBO
V
BE(on)
V
CE(Sat)
V
BE(Sat)
V
CEK
TEST CONDITION
VCB = 30V, IE = 0
VCB = 30V, IE = 0, Tj = 150oC uA
IC = 2mA, VCE = 5V
*
I
= 10mA, VCE = 5V
C
IC = 10mA, IB = 0.5mA
= 100mA, IB = 5mA
I
C
IC = 10mA, IB = 0.5mA
***
I
= 100mA, IB = 5mA
C
IC = 10mA, -IB = Value for which
IC = 11mA at -VCE = 1V
I
= 2mA, VCE = 5V
C
BC856
h
BC857/BC858
FE
BC856A/BC857A/BC858A
BC856B/BC857B/BC858B
BC857C/BC858C
C
| h
IE = ie = 0, VCB = 10V, f = 1MH
C
IC = 10mA, VCB = 5V, f = 100MH
f
T
IC = 2mA, VCE = 5V, f= 1kH
|
BC856
fe
Z
Z
Z
BC857/BC858
NF
IC = 0.2mA, VCE = 5V
RS= 2k ohm, f = 1KHZ, B= 200H
Z
TYP
MIN
MAX
15
0.6 0.75
0.82
0.30
0.65
0.7
0.85
0.60
125 475
125 800
125 250
220 475
420 800
4.5
100
125 500
125 800
10
nA
4
V
V
V
V
pF
MH
Z
dB
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