Raytheon RTPA5250-130 Datasheet

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised January 25, 2002

Page 1

www.raytheonrf.com

Characteristic performance data and specifications are subject to change without notice.

PRODUCT INFORMATION

The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN
applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII (Unlicensed National Information
Infrastructure) bands. RF inputs and outputs are matched internally to 50 ohms to reduce circuit complexity. A
pair of PHEMT switches provide additional flexibility for designers of UNII band systems. The RTPA5250-130
utilizes Raytheon’s low cost, advanced 0.5

µm gate length power PHEMT process.

 Low Cost LTCC package (11.6 x 9.1 x 1.7mm)
 38 dB small signal gain (typ.)
 7 dB headroom for signals with high peak to average power ratio
 Switches included for T/R and antenna diversity functions
 RF Inputs and outputs matched to 50 Ohms
 Process tolerant active bias eliminates process variations
 Power-down mode reduces quiescent current to 9 mA when in receive mode
 Antenna, RCV or XMT ports are internally matched when not in operation

Features

Absolute

Maximum

Ratings

Description

Parameter Symbol Value Unit

Positive Amplifier Supply DC Voltage V

dd

+4.5 V

Negative Logic Control DC Voltage V

ee

-7 V

Negative Bias Control Voltage V

ab

-7 V

Drain Current I

dd

500 mA

Case Operating Temperature T

case

-40 to +85 °C

Storage Temperature Range T

storage

-60 to +150 °C

Electrical

Characteristics

(At 25°C) 50 Ω system,

Vdd=+3.3 V,

Load VSWR < 1.2 : 1

Parameter Min Typ Max Unit

Frequency Range 5150 - 5825 MHz
Small Signal Gain 38 dB
Output Power

1

16.5 dBm

Efficiency

1

17 %

Power Out @ 1dB Comp.

2

22 dBm

Noise Figure 5 dB

Input VSWR (50 Ω)

3

2:1

Output VSWR (50 Ω)

3

2:1
Quiescent Current (XMT) 280 mA
Quiescent Current (RCV) 9 mA
PA Ramp “on” time

4

1 µS

Parameter Min Typ Max Unit

Vdd Voltage Range 3.0 3.3 3.6 V
Vee Voltage Range -6 V
Vab Voltage Range -6 -4 V

Switch Insertion Loss 1.5 dB
Switch Isolation 20 25 dB
Switch Switching Time 25 nS
Switch Amplitude Flatness

5170 - 5825 MHz +/-1 dB

Switch Control “0” Voltage 0 0.8 V
Switch Control “1” Voltage 2.0 3.3 V

Notes:

1. Output power and efficiency is the average value measured at ANT1 or ANT2 with diversity switch set to output for corresponding antenna.
Input shall be a 16QAM-modulated OFDM waveform with 52 sub-carriers spaced at 312.5 KHz. Module output power at ANT1 and ANT2
includes switch insertion loss.

2. Power out @ Idq=320 mA

3. Amplifier is unconditionally stable into all output VSWRs. Stated VSWR is required to achieve specified performance.

4. Amplifier output power and phase must settle to within 90% of final values within time specified.

RTPA5250-130

3.3V UNII Band Power Amplifier
MMIC/Switch Module for WLAN

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised January 25, 2002

Page 2

www.raytheonrf.com

Characteristic performance data and specifications are subject to change without notice.

PRODUCT INFORMATION

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

The following describes a procedure for evaluating the RTPA5250-130, power amplifier / switch module, in a
leadless package. The package outline and the pin designations are shown in Figure 1. The functional block
diagram of the packaged product is provided in Figure 2. It should be noted that RTPA5250-130 requires very
minimal external passive components for DC bias and no external components for RF matching circuits. Figure 3
shows the switch logic control table. Figure 4 shows a typical layout of an evaluation board. The module contains
the MMIC with bias decoupling components. The following designations, shown in Figure 1 should be noted:

XMT

Pin 1

GND

Pin 2, 5, 7, 9, 11,16

S1

Vab

Pin 3

Vdd

Pin 13

RCV

Pin 10

XMT/RCV Control

Pin 14

Vee

Pin 12

AMP

50 Ω

S2

ANT2

Pin 8

ANT1

Pin 6

ANT1/2 Control

Pin 15

50 Ω

(1 Vdd is the Supply voltage.
(2) V

ee

is the Logic Control voltage.

(3) V

ab

is the Active Bias Control voltage.

RTPA5250-130

3.3V UNII Band Power Amplifier
MMIC/Switch Module for WLAN

Dimensions in inches

Application

Information

Figure 1

Package

Information

XMT
GND
Vab
NC
GND
ANT1
GND
ANT2
GND
RCV
GND
Vee
Vdd
XMT/RCV Control
ANT1/2 Control
GND

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

DescriptionPin #

Figure 2

Functional Block

Diagram

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised January 25, 2002

Page 3

www.raytheonrf.com

Characteristic performance data and specifications are subject to change without notice.

PRODUCT INFORMATION

Test Procedure

for the Evaluation Board

Switch Logic

Control Table

Figure 3

Test Evaluation

Board

RTPA5250-130

3.3V UNII Band Power Amplifier
MMIC/Switch Module for WLAN

Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the GND of

the evaluation board.

Step 3: Set V

ab

= -6V, Vee= -6V.

(Adjusting Vab provides quiescent current
control to optimize performance, not to
exceed -4V)

Step 4: Slowly apply supply voltage of +3.3 V to the

board terminal V

dd

.

Step 5: Using Switch Logic Control Table below

Set up logic for desired output.
Switch Control “0” Voltage = 0 V
Switch Control “1” Voltage= +3.3 V

Step 6: After the bias condition is established, RF input

signal may now be applied at the appropriate
frequency band and power level.

Step 7: Follow turn-off sequence of:

(i) Turn down and off V

dd

.
(ii) Turn off RF Input Power.
(iii) Set V

ab

and V

ee

to 0 V.

The following sequence must be followed to properly test the amplifier:

ANT1/2 Control XMT/RCV Control ANT1/2 Mode XMT/RCV Mode

00ANT1RCV
1 1 ANT2 XMT
0 1 ANT1 XMT
10ANT2RCV

XMT/RCV Control

Vdd*

Vee

ANT1

ANT2

ANT1/2 Control

RCV

Vab

Vee*

XMT

Vdd

* Voltage inverting charge
pump connections

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised January 25, 2002

Page 4

www.raytheonrf.com

Characteristic performance data and specifications are subject to change without notice.

PRODUCT INFORMATION

Application

Information

 Precautions to Avoid Permanent Device Damage:

– Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should

remain in their original packaging until component placement to ensure no contamination or damage to RF,
DC & ground contact areas.

– Device Cleaning: Standard board cleaning techniques should not present device problems provided that

the boards are properly dried to remove solvents or water residues.

– Static Sensitivity: Follow ESD precautions to protect against ESD damage:

• A properly grounded static-dissipative surface on which to place devices.

• Static-dissipative floor or mat.

• A properly grounded conductive wrist strap for each person to wear while handling devices.

– General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp

pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not
apply excessive pressure to the top of the lid.

– Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are

protected and require no special storage conditions. Once the sealed bag has been opened, devices should
be stored in a dry nitrogen environment.

 Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand

soldering is not recommended.

– Reflow Profile

• Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to
prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A
typical heating rate is 1- 2°C/sec.

• Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board
and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at
150°C.

• Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to
thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at
temperature can enhance the formation of inter-metallic compounds at the lead/board interface and
may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely
driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering
temperatures should be in the range 215-220°C, with a maximum limit of 225°C.

• Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid
cooling promotes a finer grain structure and a more crack-resistant solder joint. Figure 1 indicates the
recommended soldering profile.

 Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the

heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness.

 Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat

gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than
5 seconds. No more than 2 rework operations should be performed.

RTPA5250-130

3.3V UNII Band Power Amplifier
MMIC/Switch Module for WLAN