Raytheon RMWT04001 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
u 4 mil substrate
u Conversion loss 14 dB (typ.)
u No DC bias required
u Chip size 1.8 mm x 1.05 mm
Features
The RMWT04001 is a 4 to 12 GHz Tripler designed to be used in the LO chain of point to point radios, point to
multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon
amplifiers, multipliers and mixers it forms part of a complete 23, 26 and 38 GHz transmit/receive chipset. The
RMWT04001 utilizes Raytheon’s 0.25 µm power PHEMT process and is sufficiently versatile to serve in a variety of
multiplier applications.
RMWT04001
4-12 GHz Tripler MMIC
Electrical
Characteristics
(At 25°C),
50 Ω system,
Pin = +18 dBm
Parameter Min Typ Max Unit
Input Frequency Range 2.8 4.0 GHz
Output Frequency Range 8.4 12.0 GHz
Input Drive Power +16 +18 dBm
Conversion Loss 14 16.5 dB
Conversion Loss Variation
vs Freq 0.7 dB
Parameter Min Typ Max Unit
Fundamental Rejection -25 dBc
2nd Harmonic Rejection -20 dBc
4th Harmonic Rejection -20 dBc
5th Harmonic Rejection -30 dBc
Input Return Loss
(Pin = +18 dBm) 10 dB
Absolute
Maximum
Ratings
Parameter Symbol Value Units
RF Input Power (from 50 Ω source) P
IN
+25 dBm
Operating Baseplate Temperature T
C
-30 to +85 °C
Storage Temperature Range T
stg
-55 to +125 °C
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Note:
Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Figure 3
Recommended
Assembly Diagram
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 1.8 mm x
1.05 mm x100 µm. Back
of chip is RF ground
Dimensions in mm
0.0
0.0
0.0
0.0
1.051.05
1.8
1.8
0.592
0.448
0.592
0.448
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015”
(2 Places)
Die-Attach
80Au/20Sn
Figure 1
Functional Block
Diagram
MMIC Chip
RF OUTRF IN
Ground
(Back of Chip)
X3
The following sequence must be followed to properly test the amplifier.
Step 1: The RMWT04001 does not require DC bias.
Apply RF input signal at the appropriate
frequency band and input drive level.
Step 2: Follow turn-off sequence of:
Turn off RF input power.
Recommended
Procedure
for Operation
RMWT04001
4-12 GHz Tripler MMIC
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