Raytheon RMWP38001 Datasheet

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised March 14, 2001

Page 1

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

PRODUCT INFORMATION

Parameter Min Typ Max Unit

Frequency Range 37 40 GHz
Gate Supply Voltage

1

(Vg) -0.5 V

Gain Small Signal at

Pin= -10 dBm 18 22 dB
Gain Variation vs Frequency 4 dB
Gain at 1 dB Compression 21 dB
Power Output at 1 dB

Compression 22 dBm
Power Output Saturated:

Pin=+5 dBm 21 23.5 dBm
Drain Current at

Pin=-10 dBm 250 mA
Drain Current at 1dB

Compression 280 mA

Parameter Min Typ Max Unit

Drain Current at Saturated:

Pin=+5 dBm 270 mA

Power Added Efficiency

(PAE): at P1dB 15 %

Input Return Loss

(Pin=-10 dBm) 12 dB

Output Return Loss

(Pin=-10 dBm) 7 dB
OIP3 30 dBm
Noise Figure 6 dB
Detector Voltage

(Pout= +15 dBm) 0.15 V

(Bias Current =

0.02-0.05 mA)

Parameter Symbol Value Unit

Positive DC voltage (+4V Typical) Vd +6 Volts
Simultaneous (Vd - Vg) Vdg 8 Volts
Positive DC Current I

D

483 mA

RF Input Power (from 50 Ω source) P

IN

+8 dBm

Operating Baseplate Temperature T

C

-30 to +85 °C

Storage Temperature Range T

stg

-55 to +125 °C

Thermal Resistance R

jc

46 °C/W

(Channel to Backside)

The RMWP38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Power Amplifier for use in point to
point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction
with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset.
The RMWP38001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a
variety of power amplifier applications.

Absolute

Maximum

Ratings

Description

 4 mil substrate
 Small-signal gain 22 dB (typ.)
 1dB compressed Pout 22 dBm (typ.)
 Chip size 3.4 mm x 1.4 mm

Features

Note:

1. Typical range of gate voltage is -2.0 to 0 V to set Idq of 250 mA.

Electrical

Characteristics

(At 25°C),

50

Ω system,

Vd=+4 V,

Quiescent Current

Idq=250 mA

RMWP38001

37-40 GHz Power Amplifier MMIC

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised March 14, 2001

Page 2

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

PRODUCT INFORMATION

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.

Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.

Application

Information

Figure 1

Functional Block

Diagram

Drain Supply

Vd1

Drain Supply

Vd2

MMIC Chip

RF OUT

RF IN

Gate Supply

Vg

Ground

(Back of Chip)

Drain Supply

Vd3

Drain Supply

Vd4

Reference Detector Voltage
Vref (not connected to circuit)

Output Power

Detector Voltage Vdet

Note:

For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to
measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.

Dimensions in mm

0.0

1.4

0.8355

0.686

0.5365

0.0

0.0

0.0

3.4

3.4

1.4

0.545 1.05 1.55 3.0375

0.376

0.8315

0.682

0.5325

Figure 2

Chip Layout and Bond

Pad Locations

Chip Size is 3.4 mm x

1.4 mm. Back of chip is
RF and DC ground

RMWP38001

37-40 GHz Power Amplifier MMIC