Raytheon RMWL38001 Datasheet
RMWL38001
37-40 GHz Low Noise Amplifier MMIC
PRODUCT INFORMATION
Description
Features
Absolute
Maximum
Ratings
The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL38001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
4 mil substrate
Noise figure 2.7 dB (typ.)
Small-signal gain 22 dB (typ.)
1dB compressed Pout 13.5 dBm (typ.)
Chip size 2.9 mm x 1.25 mm
Parameter Symbol Value Unit
Positive DC voltage (+4 V Typical) Vd +6 Volts
Negative DC voltage Vg -2 Volts
Simultaneous (Vd - Vg) Vdg 8 Volts
Positive DC current I
RF Input Power (from 50 Ω source) P
Operating Baseplate Temperature T
Storage Temperature Range T
Thermal Resistance R
(Channel to Backside)
D
IN
C
stg
JC
75 mA
+6 dBm
-30 to +85 °C
-55 to +125 °C
169 °C/W
Electrical
Characteristics
(At 25°C),
Ω system,
50
Vd=+4 V,
Quiescent Current
Idq=50 mA
Parameter Min Typ Max Unit
Frequency Range 37 40 GHz
Gate Supply Voltage (Vg)
Noise Figure 2.7 4.0 dB
Gain Small Signal at
Pin=-20 dBm 22 dB
Gain Variation vs.
Frequency 1.5 dB
Gain at 1dB Compression 21 dB
Power Output at 1dB
Compression 13.5 dBm
Note:
1. Typical range of negative gate voltage is -0.9 to -0.1 V to set typical Idq of 50 mA.
Characteristic performance data and specifications are subject to change without notice.
1
-0.5 V
Parameter Min Typ Max Unit
Power Output Saturated 15 dBm
Drain Current at
Pin=-20 dBm 50 mA
Drain Current at
1dB Compression 55 mA
Input Return Loss
(Pin=-15 dBm) 12 dB
Output Return Loss
(Pin=-15 dBm) 13 dB
OIP3 23 dBm
www.raytheon.com/micro
Revised March 14 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMWL38001
37-40 GHz Low Noise Amplifier MMIC
PRODUCT INFORMATION
Application
Information
Figure 1
Functional Block
Diagram
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Drain
Supply
Vd1
MMIC Chip
Drain
Supply
Vd2
Drain
Supply
Vd3
Drain
Supply
Vd4
RF OUTRF IN
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 2.9 mm x
1.25 mm x 100
Back of chip is RF and
DC ground
www.raytheon.com/micro
µm.
Ground
(Back of Chip)
Gate Supply
Vg1
Gate Supply
Vg2
Dimensions in mm
0.0
0.293 1.476
1.25 1.25
0.774
0.6245
0.475
0.0
0.0
Characteristic performance data and specifications are subject to change without notice.
Revised March 14 2001
Page 2
0.645 0.895
1.7375
1.895
2.013
2.645
2.9
2.9
0.775
0.6255
0.476
0.0
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMWL38001
37-40 GHz Low Noise Amplifier MMIC
PRODUCT INFORMATION
Figure 3
Recommended
Application Schematic
Circuit Diagram
RF IN
10,000pF
100pF
MMIC Chip
Ground
(Back of Chip)
Drain Supply
Vd=+4 V
100pF
L
L
L = Bond Wire Inductance
L
L
LL
L
100pF
Gate Supply
Vg
L
10,000pF
L
LL
100pF
L
L
100pF
RF OUT
Figure 4
Recommended
Assembly Diagram
Vdd
(Positive)
Die-Attach
80Au/20Sn
5 mil Thick
Alumina
50-Ohm
5mil Thick
Alumina
100pF
10,000pF
100pF
10,000pF
100pF
50-Ohm
RF
RF
Output
Input
100pF
100pF
2 mil Gap
Vg
L< 0.015”
(4 Places)
(Negative)
Note:
Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Loading...