Raytheon RMWL05001 Datasheet

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised March 2, 2001

Page 1

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

PRODUCT INFORMATION

Description

 Single positive supply operation
 4 mil substrate
 Noise figure 1.4 dB (typ.)
 Small-signal gain 18 dB (typ.)
 1dB compressed Pout 14 dBm (typ.)
 Chip size 2.0 mm x 1.15 mm

Features

The RMWL05001 is a 2-stage GaAs MMIC amplifier designed as a 4.7 to 5.2 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL05001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.

RMWL05001

5 GHz Low Noise Amplifier MMIC

Electrical

Characteristics

(At 25°C),

50

Ω system,

Vd=+4 V

Single Bias Supply

Parameter Min Typ Max Unit

Frequency Range 4.7 5.2 GHz
Noise Figure 1.4 2.3 dB
Gain Small Signal at Pin=-20 dBm 14 18 20 dB
Gain Variation vs. Frequency 1 dB
Gain at 1dB Compression 17 dB
Power Output at 1dB Compression 14 dBm

Parameter Min Typ Max Unit

Drain Current at Pin=-20 dBm 50 mA
Input Return Loss (Pin=-15 dBm) 15 dB
Output Return Loss (Pin=-15 dBm) 15 dB

Absolute

Maximum

Ratings

Parameter Symbol Value Units

Positive DC voltage (+4 V Typical) Vd +6 Volts
Positive DC current I

D

113 mA

RF Input Power (from 50 Ω source) P

IN

+8 dBm

Operating Baseplate Temperature T

C

-30 to +85 °C

Storage Temperature Range T

stg

-55 to +125 °C

Thermal Resistance R

JC

112 °C /W

(Channel to Backside)

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised March 2, 2001

Page 2

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

PRODUCT INFORMATION

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.

Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.

Application

Information

RMWL05001

5 GHz Low Noise Amplifier MMIC

Figure 1

Functional Block

Diagram

RF IN RF OUT

Drain Supply

Vd

Ground

(Back of chip)

MMIC Chip

RF IN RF OUT

Ground

(Back of chip)

MMIC Chip

Figure 2

Schematic of

Application Circuit

Amplifier is self-biased.

No gate supply is

required.

Drain Supply

Vd=+4 V

100pF

10,000pF

L

L

L = Bond Wire Inductance