Raytheon RMWD38001 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
4 mil substrate
Small-signal gain 25 dB (typ.)
1dB compressed Pout 18 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 3.0 mm x 1.2 mm
Features
The RMWD38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Driver Amplifier for use in point to
point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction
with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset.
The RMWD38001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a
variety of driver amplifier applications.
RMWD38001
37-40 GHz Driver Amplifier MMIC
Electrical
Characteristics
(At 25 °C 50Ω
system, Vd=+4 V,
Quiescent Current
(Idq)= 105 mA
Parameter Min Typ Max Unit
Frequency Range 37 40 GHz
Gate Supply Voltage (Vg)
1
-0.4 V
Gain Small Signal at
Pin = -10 dBm 21 25 dB
Gain Variation vs Frequency 2 dB
Gain at 1dB Compression 24 dB
Power Output at 1 dB
Compression 18 dBm
Power Output Saturated:
Pin = -5.5 dBm 15.5 19 dBm
Drain Current at
Pin = -10 dBm 105 mA
Drain Current at 1 dB
Compression 120 mA
Parameter Min Typ Max Unit
Drain Current at Saturated:
Pin = -5.5 dBm 120 mA
Power Added Efficiency
(PAE): at P1 dB 13 %
Input Return Loss
(Pin = -10 dBm) 15 dB
Output Return Loss
(Pin = -10 dBm) 9 dB
OIP3 28 dBm
Noise Figure 6 dB
Detector Voltage
(Pout = +17 dBm) 0.1 V
Note:
1. Typical range of gate voltage is -0.7 to -0.1 V to set Idq of 105 mA.
Absolute
Maximum
Ratings
Parameter Symbol Value Units
Positive DC voltage (+4 V Typical) Vd +6 Volts
Negative DC voltage Vg -2 Volts
Simultaneous (Vd - Vg) Vdg 8 Volts
Positive DC Current I
D
173 mA
RF Input Power (from 50 Ω source) P
IN
+8 dBm
Operating Baseplate Temperature T
C
-30 to +85 °C
Storage Temperature Range T
stg
-55 to +125 °C
Thermal Resistance R
jc
126 °C/W
(Channel to Backside)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 1
Functional Block
Diagram
RF IN RF OUT
Drain Supply
Vd1
Drain Supply
Vd2
Drain Supply
Vd3
Drain Supply
Vd4
Gate Supply
Vg
Output Power
Detector Voltage Vdet
Ground
(Back of Chip)
MMIC Chip
Note:
Detector delivers 0.1 V DC into 3k Ω load resistor for >+17 dBm output power. If output power level detection is not desired, do not make
connection to detector bond pad.
0.0
0.0
0.0
0.0
3.0
3.0
1.2
1.2
0.863
0.707
0.398
0.552
0.8895 2.6292.13051.33675
0.707
0.398
0.552
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 3.0 mm x
1.2 mm. Back of chip is
RF and DC ground
Dimensions in mm
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
RMWD38001
37-40 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 3
Recommended
Application Schematic
Circuit Diagram
RMWD38001
37-40 GHz Driver Amplifier MMIC
L
Drain Supply
Vd = +4 V
Ground
(Back of Chip)
MMIC Chip
RF OUT
RF IN
100pF
100pF
10,000pF
L
L
L
100pF
100pF
10,000pF
L
L
L
L
L
L
L = Bond Wire Inductance
100pF
100pF
Gate Supply
Vg
L
L
L
L
Output Power
Detector Voltage
Vdet
3 kΩ
Note:
Detector delivers 0.1 V DC into 3k Ω load resistor for >+17 dBm output power. If output power level detection is not desired, do not make
connection to detector bond pad.
Notes:
Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Detector delivers 0.1V DC into 3k Ω load resistor for >+17 dBm output power. If output power level detection is not desired, do not make
connection to detector bond pad
100pF
10,000pF
100pF
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil
Gap
L< 0.015”
(4 Places)
Die-Attach
80Au/20Sn
100pF
Vg
(Negative)
100pF
100pF
10,000pF
Vd
(Positive)
100pF
Detector Voltage
3kΩ
Figure 4
Recommended
Assembly Diagram
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