Raytheon RMWD24001 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
The RMWD24001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Driver Amplifier for use in point
to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz
transmit/receive chipset. The RMWD24001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of driver amplifier applications.
Description
Absolute
Maximum
Ratings
Electrical
Characteristics
(At 25°C), 50 Ω system,
Vd=+4 V, Quiescent
Current Idq=240 mA
4 mil substrate
Small-signal gain 23 dB (typ.)
1dB compressed Pout 17 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 2.85 mm x 1.2 mm
Features
Note:
1. Typical range of the negative gate voltages is -0.7 to -0.1V to set typical Idq of 240 mA.
Parameter Min Typ Max Unit
Drain Current 265 mA
at 1dB Compression
Input Return Loss 10 dB
(Pin=-12 dBm)
Output Return Loss 12 dB
(Pin=-12 dBm)
OIP3 TBD dBm
Noise Figure TBD dB
Detector Voltage TBD V
Parameter Symbol Value Unit
Positive DC voltage (+4 V Typical) Vd +6 Volts
Negative DC voltage Vg -2 Volts
Simultaneous (Vd - Vg) Vdg 8 Volts
Positive DC Current I
D
345 mA
RF Input Power (from 50 Ω source) P
IN
+8 dBm
Operating Baseplate Temperature T
C
-30 to +85 °C
Storage Temperature Range T
stg
-55 to +125 °C
Thermal Resistance R
JC
42 °C/W
(Channel to Backside)
Parameter Min Typ Max Unit
Frequency Range 21 26.5 GHz
Gate Supply Voltage (Vg)
1
-0.4 V
Gain Small Signal 20 23 dB
at Pin=-12 dBm
Gain Variation vs. Frequency 3 dB
Gain at 1dB Compression 22 dB
Power Output at P1dB 13 17 dBm
(Pin=-6 dBm)
Drain Current 240 mA
at Pin=-12 dBm
RMWD24001
21-26.5 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 1
Functional
Block Diagram
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
Drain Supply
Vd1
Drain Supply
Vd2
MMIC Chip
RF OUTRF IN
Gate Supply
Vg1&4
Ground
(Back of Chip)
Output Power
Detector Voltage
Vdet*
*Note: Detector delivers 0.1 V DC into 3k Ω load resistor for >+7 dBm output power. If output power level detection is not desired, do not make
connection to detector bond pad.
Drain Supply
Vd3
Drain Supply
Vd4
Gate Supply
Vg2&3
0.0
0.0
0.0
0.0
2.85
2.85
1.2
1.2
0.768
0.6135
0.459
0.820
0.6655
0.511
0.921 2.119
0.2485 1.1215 1.642
2.352
Figure 2
Chip Layout and
Bond Pad Locations
(Chip Size=2.85 mm
x 1.2 mm. Back of
Chip is RF and DC
Ground)0
Dimensions in mm
RMWD24001
21-26.5 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
MMIC Chip
RF OUTRF IN
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply
Vd=+4 V
Gate Supply
Vg
Output Power
Detector Voltage
Vdet
Ground
(Back of Chip)
100pF
L
L
L
100pF 100pF
10,000pF
LL
100pF100pF
L
L
L L
L = Bond Wire Inductance
100pF
L
L
R = 3k Ohms
10,000pF
LLL
L
RMWD24001
21-26.5 GHz Driver Amplifier MMIC
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