Raytheon RMWB33001 Datasheet
RMWB33001
33 GHz Buffer Amplifier MMIC
PRODUCT INFORMATION
Description
Features
Absolute
Maximum
Ratings
The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in the LO chain
of point to point radios, point to multi- point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWB33001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of medium power amplifier applications.
4 mil substrate
Small-signal gain 24 dB (typ.)
Saturated power out 19 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 3.2 mm x 1.2 mm
Parameter Symbol Value Units
Positive DC voltage (+4 V Typical) Vd +6 Volts
Negative DC voltage Vg -2 Volts
Simultaneous (Vd - Vg) Vdg 8 Volts
Positive DC Current I
RF Input Power (from 50 Ω source) P
Operating Baseplate Temperature T
Storage Temperature Range T
Thermal Resistance R
(Channel to Backside)
D
IN
C
stg
jc
173 mA
+8 dBm
-30 to +85 °C
-55 to +125 °C
130 °C/W
Electrical
Characteristics
(At 25°C),
50
Ω system,
Vd=+4 V,
Quiescent Current
Idq=112 mA
Parameter Min Typ Max Unit
Frequency Range 32 35 GHz
Gate Supply Voltage (Vg)
Gain Small Signal
(Pin= -15 dBm) 20 24 dB
Gain Variation vs. Frequency 2.0 dB
Power Output Saturated:
(Pin=+1 dBm) 17 19 dBm
Drain Current at Psat 120 mA
Note:
1. Typical range of gate voltage is -0.5 to 0V to set Idq of 112 mA.
1
-0.2 V
Parameter Min Typ Max Unit
Power Added Efficiency (PAE):
at Psat 15 %
Input Return Loss
(Pin=-15 dBm) 12 dB
Output Return Loss
(Pin=-15 dBm) 12 dB
DC detector voltage
at Pout=18 dBm 1.0 V
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Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMWB33001
33 GHz Buffer Amplifier MMIC
PRODUCT INFORMATION
Application
Information
Figure 1
Functional Block
Diagram
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
MMIC Chip
Drain Supply
Vd1
Drain Supply
Vd2
Drain Supply
Vd3
Drain Supply
Vd4
RF IN
Ground
(Back of Chip)
Note:
Detector delivers > 0.1 V DC into 3k Ω load resistor for >+18 dBm output power. If output power level detection is not desired, do not connect to
detector bond pad.
Gate Supply
Vg
Output Power
Detector Voltage
Vdet
RF OUT
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Figure 2
Schematic of
Application Circuit
RMWB33001
33 GHz Buffer Amplifier MMIC
10,000 pF
Drain Supply
Vd=4 V
Bond Wires
10,000 pF
PRODUCT INFORMATION
Bond Wires
100 pF
MMIC Chip
RF IN
Ground
(Back of Chip)
Bond Wires
Note:
Detector delivers > 0.1 V DC into 3kΩ load resistor for >+18dBm output power. If output power level detection is not desired, do not connect to
detector bond pad.
100 pF
100 pF
10,000 pF
Gate Supply Vg
100 pF 100 pF
3 kΩ
Output Power
Detector Voltage Vdet
RF OUT
Bond Wires
100 pF
Figure 3
Chip layout and Bond
Pad Locations
Chip Size is
3.19 mm x 1.19 mm x
100
Back of chip is
RF and DC ground
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µm.
Dimensions in mm
0.00 0.82 1.34 1.83 2.58
1.19
1.09
0.725
0.57
0.415
0.10
0.00
0.00
0.10 0.60 2.85 3.09 3.19
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 3
3.19
1.19
1.09
0.725
0.57
0.415
0.10
0.00
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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