Raytheon RMWB12001 Datasheet
RMWB12001
12 GHZ Buffer Amplifier MMIC
PRODUCT INFORMATION
Description
Features
Absolute
Maximum
Ratings
The RMWB12001 is a 3-stage GaAs MMIC amplifier designed as an 8.5 to 12 GHz Buffer Amplifier for use in the LO
chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications.
In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz
transmit/receive chipset. The RMWB12001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of medium power amplifier applications.
4 mil substrate
Small-signal gain 25 dB (typ.)
3 dB compressed Pout 21 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 2.2 mm x 1.7 mm
Parameter Symbol Value Units
Positive DC Voltage (+4 V Typical) Vd +6 Volts
Negative DC Voltage Vg -2 Volts
Simultaneous (Vd - Vg) Vdg 8 Volts
Positive DC Current I
RF Input Power (from 50 Ω source) P
Operating Baseplate Temperature T
Storage Temperature Range T
Thermal Resistance R
(Channel to Backside)
D
IN
C
stg
jc
207 mA
+8 dBm
-30 to +85 °C
-55 to +125 °C
120 °C/W
Electrical
Characteristics
(At 25°C),
50
Ω system, Vd=+4 V,
Quiescent Current
Idq=96 mA
Parameter Min Typ Max Unit
Frequency Range 8.5 12 GHz
Gate Supply Voltage
Gain Small Signal
(Pin=-15 dBm) 23 25 dB
Gain Variation Vs
Frequency 3.0 dB
Power Output Saturated
(Pin=-1 dBm) 18 21 23 dBm
Drain Current Saturated
(Pin=-1 dBm) 120 220 mA
Note:
1. Typical range of gate voltage is -0.7 to -0.1V to set Idq of 96 mA.
Characteristic performance data and specifications are subject to change without notice.
1
(Vg) -0.2 V
Parameter Min Typ Max Unit
Power Added Efficiency
(PAE) at Psat 26 %
Input Return Loss
(Pin=-15 dBm) 12 dB
Output Return Loss
(Pin=-15 dBm) 10 dB
DC detector voltage at
Pout=20 dBm 0.5 V
www.raytheon.com/micro
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMWB12001
12 GHZ Buffer Amplifier MMIC
PRODUCT INFORMATION
Application
Information
Figure 1
Functional
Block Diagram
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Drain Supply
Vd1
MMIC Chip
RF IN
Drain Supply
Vd2 and Vd3
Output Power
Detector Voltage Vdet
RF OUT
Figure 2
Chip Layout and
Bond Pad locations.
Chip size is 2.24
mm x 1.70 mm x
100
µm. Back of
chip is RF and DC
ground.
Gate Supply VgGround (Back of Chip)
Note:
Detector delivers > 0.1V DC into 3 kΩ load resistor for > +20 dBm output power. If output power level detection is not desired, do not connect to
detector bond pad.
Dimensions in mm
0.11
1.70
1.60
1.42
0.10
0.00
0.00
Characteristic performance data and specifications are subject to change without notice.
0.48
0.73
1.11
2.03 2.24
2.24
2.12
1.70
1.60
0.69
0.10
0.00
www.raytheon.com/micro
Revised March 14, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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