Raytheon RMPA29200 Datasheet

RMPA29200

29-31 GHz 2 Watt Power Amplifier MMIC

ADVANCED INFORMATION

Description

Features

Absolute

Maximum

Ratings

The Raytheon RMPA29200 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio,
point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29200 is a 3-stage
GaAs MMIC amplifier utilizing Raytheon’s advanced 0.15

µm gate length Power PHEMT process and can be used in

conjunction with other driver or power amplifiers to achieve the required total power output.

 17 dB small signal gain (typ.)
 33 dBm saturated power out (typ.)
 DC Bias connections on top or bottom side
 Circuit contains individual source vias
 Chip size 4.00 mm x 2.98 mm

Parameter Symbol Typical Units

Positive DC Voltage (+5 V Typical) Vd + 6 Volts
Negative DC Voltage Vg
Simultaneous (Vd - Vg) Vdg + 8 Volts
Positive DC Current I
RF Input Power (from 50 Ω source) P
Operating Base plate Temperature T
Storage Temperature Range T
Thermal Resistance R
(Channel to Backside)

D

IN

C

Stg

jc

- 2 Volts

2450 mA

+22 dBm

-30 to +85 °C

-55 to +125 °C

5.6 °C/W

Electrical

Characteristics

(at 25 °C) 50 Ohm

system, Vd=+5V,

Quiescent current

(Idq)=1500 mA

Parameter Min Typ Max Unit

Frequency Range 29 31 GHz
Gate Supply Voltage (Vg)
Gain Small Signal 14.5 17 dB

(Pin=0 dBm)
Gain Variation vs. Frequency +/-0.5 dB
Power Output 32.5 dBm

at 1 dB Compression
Power Output Saturated: 32 33 dBm

(Pin=+19 dBm)
Drain Current 1500 mA

at Pin=0 dBm

Note:

1. Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1500 mA.

Characteristic performance data and specifications are subject to change without notice.

1

-0.2 V

Parameter Min Typ Max Unit

Drain Current 1780 mA

at P1 dB Compression

Power Added Efficiency 20 %

(PAE): at P1dB
OIP3 (26 dBm/Tone) 38 dBm
Input Return Loss 12 dB

(Pin=0 dBm)
Output Return Loss 10 dB

(Pin=0 dBm)

www.raytheon.com/micro

Revised July 27, 2001

Page 1

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

RMPA29200

29-31 GHz 2 Watt Power Amplifier MMIC

ADVANCED INFORMATION

Application

Information

Figure 1

Functional Block

Diagram

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high
thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined,
finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution
including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded
to prevent static discharges through the device.

Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typically 2 mils gap between the chip and the substrate material.

Gate Supply

Vg

MMIC Chip

RF IN

RF OUT

Figure 2

Chip Layout and Bond

Pad Locations

(Chip Size=4.000 mm
x 2.997 mm x 50 µm.

Back of Chip is RF and

DC Ground)

Ground

(Back of Chip)

Dimensions in mm

0.0 0.454

Characteristic performance data and specifications are subject to change without notice.

1.422

Drain Supply

Vd

2.513

3.891

2.997

2.812

2.714

1.692

1.492

1.292

0.270

0.172

0.0

4.000

www.raytheon.com/micro

Revised July 27, 2001

Page 2

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

RMPA29200

29-31 GHz 2 Watt Power Amplifier MMIC

ADVANCED INFORMATION

Figure 3

Recommended

Application Schematic and

Circuit Diagram

RF IN

MMIC Chip

Ground

(Back of Chip)

100pF

0.01µF

Gate Supply

0.01µF

100pF

100pF

0.01µF

(-Vg)

Bond Wire Ls

RF OUT

100pF

Bond Wire Ls

0.01µF

Figure 4

Recommended

Assembly Diagram

Drain Supply

(Vd=+5V)

2 mil Gap

5mil Thick
Alumina
50-Ohm

RF
Input

100pF

Vg
(Negative)

Characteristic performance data and specifications are subject to change without notice.

Die-Attach

80Au/20Sn

100pF 100pF100pF

0.01µF0.01µF0.01µF

0.01µF

Vd
(Positive)

5 mil Thick
Alumina
50-Ohm

RF
Output

L< 0.015”
(4 Places)

MMIC has Vg and Vd bias pads accessible on
both top and bottom sides. DC bias connections
are required only on one side.

Note: Use 0.003” x 0.0005” gold ribbon or 1 mil
gold wire for bonding. RF input and output bonds
should be less than 0.015” long with stress relief.

www.raytheon.com/micro

Revised July 27, 2001

Page 3

Raytheon RF Components

362 Lowell Street

Andover, MA 01810