Raytheon RMPA27000 Datasheet

RMPA27000

27 - 29 GHz 1.8 Watt Power

Description

Features

Absolute

Maximum

Ratings

Amplifier MMIC

ADVANCED INFORMATION

The Raytheon RMPA27000 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio,
point to multi-point communications, LMDS and other millimeter wave applications. The RMPA27000 is a 3-stage
GaAs MMIC amplifier utilizing Raytheon’s advanced 0.15 µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.

 18 dB small signal gain (typ.)
 32.5 dBm saturated power out (typ.)
 DC Bias connections on top or bottom side
 Circuit contains individual source vias
 Chip size 4.00 mm x 2.98 mm

Parameter Symbol Value Unit

Positive DC Voltage (+5 V Typical) Vd + 6 Volts
Negative DC Voltage Vg - 2 Volts
Simultaneous (Vd - Vg) Vdg + 8 Volts
Positive DC Current I
RF Input Power (from 50 Ω source) P
Operating Base plate Temperature T
Storage Temperature Range T
Thermal Resistance R

(Channel to Backside)

Stg

D

IN

C

jc

2450 mA

+22 dBm

-30 to +85 °C

-55 to +125 °C

5.6 °C/W

(Photo TBS)

Electrical

Characteristics

(At 25°C) 50 Ω

system, Vd=+5 V,

Quiescent current

(Idq) =1500 mA

www.raytheon.com/micro

1

Parameter Min Typ Max Unit

Frequency Range 27 29 GHz
Gate Supply Voltage (Vg)
Gain Small Signal

(Pin=0 dBm) 16 18 dB

Gain Variation vs.

Frequency +/-0.5 dB

Power Output at 1 dB

Compression 32 dBm

Power Output Saturated:

(Pin=+19 dBm) 32 32.5 dBm

Note:

1. Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1500 mA.

Characteristic performance data and specifications are subject to change without notice.

Revised July 27, 2001

Page 1

1

-0.2 V

Parameter Min Typ Max Unit

Drain Current at Pin=0 dBm 1500 mA
Drain Current at P1 dB

Power Added Efficiency

OIP3 (24 dBm/Tone) 39 dBm
Input Return Loss

Output Return Loss

Compression 1780 mA

(PAE): at P1dB 20 %

(Pin=0 dBm) 6 dB

(Pin=0 dBm) 10 dB

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

RMPA27000

27 - 29 GHz 1.8 Watt Power

Application

Information

Figure 1

Functional Block

Diagram of

Packaged Product

Amplifier MMIC

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.

Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typically 2 mils gap between the chip and the substrate material.

Gate Supply

Vg

MMIC Chip

RF IN RF OUT

ADVANCED INFORMATION

Figure 2

Chip Layout and Bond

Pad Locations

(Chip Size=4.000 mm x

2.997 mm x 50 um

Typical, Back of Chip is

RF and DC Ground)

Dimensions in mm

Ground

(Back of Chip)

Drain Supply

Vd

2.997

2.812

2.714

1.692

1.492

1.292

0.270

0.172

0.0

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0.0 0.454

Characteristic performance data and specifications are subject to change without notice.

Revised July 27, 2001

Page 2

1.422

2.513 4.000

3.891

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

RMPA27000

27 - 29 GHz 1.8 Watt Power

Figure 3

Chip Layout and Bond

Pad Locations

(Chip Size=4.000 mm x

2.997 mm x 50 um

Typical, Back of Chip is

RF and DC Ground)

Figure 4

Recommended

Assembly Diagram

Amplifier MMIC

Gate Supply

0.01 µF

100pF

MMIC Chip

RF IN RF OUT

100pF

Ground

(Back of Chip)

0.01 µF 0.01 µF0.01 µF

2 mil Gap

Die-Attach
80Au/20Sn

(-Vg)

Bond Wire Ls

100pF100pF

Drain Supply
(Vd=+5V)

ADVANCED INFORMATION

Bond Wire Ls

5mil Thick
Alumina
50-Ohm

RF
Input

100pF

Vg (Negative)

MMIC has Vg and Vd bias pads accessible on both top and bottom sides. DC bias connections are required only on one side.

Note:Use 0.003” x 0.0005” gold ribbon or 1 mil gold wire for bonding. RF input and output bonds should be less than 0.015” long with

stress relief.

Characteristic performance data and specifications are subject to change without notice.

100pF

100pF

100pF

0.01µF0.01µF0.01µF

0.01µF

Vd (Positive)

5 mil Thick
Alumina
50-Ohm

RF
Output

L< 0.015”
(4 Places)

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Revised July 27, 2001

Page 3

Raytheon RF Components

362 Lowell Street

Andover, MA 01810