Raytheon RMPA25000 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 11, 2002
Page 1
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
The Raytheon RMPA25000 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio,
point to multi-point communications, LMDS and other millimeter wave applications. The RMPA25000 is a 2-stage
GaAs MMIC amplifier utilizing Raytheon’s advanced 0.15 mm gate length Power PHEMT process and can be used
in conjunction with other driver or power amplifiers to achieve the required total power output.
Description
Absolute
Maximum
Ratings
Electrical
Characteristics
1
18 dB small signal gain (typ.)
33 dBm saturated power out (typ.)
Circuit contains individual source vias
Chip size 4.45 mm x 3.87 mm
Features
Note:
1. Operated at 25°C, 50 ohm system, Vd=+5V, quiescent current (Idq)=1200 mA).
2. Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1200 mA.
Parameter Symbol Value Unit
Positive DC Voltage (+5 V Typical) Vd + 6 Volts
Negative DC Voltage Vg - 2 Volts
Simultaneous (Vd - Vg) Vdg + 8 Volts
Positive DC Current Id 2096 mA
RF Input Power (from 50 Ω source) Pin +20 dBm
Operating Base plate Temperature Tc -30 to +85 °C
Storage Temperature Range Tstg -55 to +125 °C
Thermal Resistance Rjc 8.8 °C/W
(Channel to Backside)
RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
Parameter Min Typ Max Unit
Frequency Range 23.5 26 GHz
Gate Voltage (Vg)
2
-0.3 V
Gain Small Signal 13 18 dB
(Pin=-5 dBm)
Gain Variation vs.
Frequency +/-1 dB
Power Output 32 dBm
at 1 dB Compression
Power Output Saturated: 31.5 33 dBm
(Pin=+17 dBm)
Parameter Min Typ Max Unit
Drain Current 1200 mA
at Pin=-5 dBm
Drain Current 1430 mA
at P1 dB Compression
Power Added Efficiency
(PAE) at P1dB 22 %
OIP3 38 dBm
Input Return Loss 12 dB
(Pin=-5 dBm)
Output Return Loss 12 dB
(Pin=-5 dBm)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 11, 2002
Page 2
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typical 2 mil gap between the chip and the substrate material.
Application
Information
Figure 1
Functional Block
Diagram
RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
RF IN
RF OUT
Gate Supply
(VGA & VGB)
Drain Supply
(VDA & VDB)
Ground
(Back of Chip)
MMIC Chip
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size=4.454 mm x
3.874 mm x 50
µm.
Back of Chip is RF and
DC Ground)
3.874
0.0
0.0
0.226
1.699 2.724
0.202
0.726
3.814 4.454
0.261
1.707
1.937
2.167
3.614
3.690
0.137
3.737
2.984
0.149
4.250
Dimensions in mm
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