Raytheon RMPA2450-58 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 30, 2000
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
Parameter Symbol Value Unit
Positive Drain DC Voltage Vd1,Vd2 +8 Volts
Negative Gate DC Voltage Vg1,Vg2 -5 Volts
Simultaneous Drain to Gate Voltage Vd-Vg +10 Volts
RF Input Power (from 50Ω source) PIN +10 dBm
Drain to Source Current Ids 575 mA
Gate Current Ig 5 mA
Channel Temperature Tch 150 °C
Operating Case Temperature TCase -40 to 100 °C
Storage Temperature Range TStg -40 to 125 °C
Absolute
Maximum
Ratings
Electrical
Characteristics
(At 25°C,
Zo=50 Ohms,
Unless Otherwise
Noted)
Features
35% Power Added Efficiency
31 dBm Output Power (P1dB) at Vd=+7V
28 dBm Output Power (P1dB) at Vd= +5V
No external RF matching components
Small Package Outline: 0.28” x 0.28” x 0.07”
Thermal Resistance (Channel to Case): 33°C/Watt
Notes:
1. Idq=360 mA, Vd1=Vd2=4.8V
2. Pin= -3 dBm,
3. Vd1=Vd2= +7V
4. Production Testing includes Gain, Output Power (P1dB) and Input Return Loss at Vd1=Vd2=4.8V, Vg1=Vg2= -0.5V (nominal) , adjusted for
Idq=360 mA, Pin= -3 dBm and at F=2.45 GHz. Other Parameters are guaranteed by Design Validation Testing.
Parameter Min Typ Max Unit
Frequency Range 2400 2450 2500 MHz
Gain
1, 2, 4
30 dB
Output Power, P1dB
1,4
28dBm
Assoc. Power Added
Efficiency 35 %
Output Power, P1dB
3
31 dBm
Assoc. Power Added
Efficiency 33 %
Parameter Min Typ Max Unit
Drain Current (Idd1+Idd2) 550 mA
Gate Current (Igg1+Igg2) 5 mA
Input Return Loss (50Ω)7.5 dB
The Raytheon RMPA2450-58 is a fully monolithic power amplifier in a surface mount package for use in wireless
applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F
for high efficiency applications. On-chip matching components allow operation in a 50-Ohm system with no
external matching components. The MMIC chip design utilizes Raytheon’s 0.25
µm power PHEMT process.
RMPA2450-58
2.4-2.5 GHz GaAs MMIC Power Amplifier
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 30, 2000
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Application
Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier packaged in a
surface mount package. It may be noted that the chip is a fully monolithic amplifier for ISM band applications.
Figure 1 shows the functional block diagram of the packaged product.
Test Fixture
Figure 1 shows the outline and pin-out descriptions for the packaged device. A typical test fixture schematic
showing external bias components is shown in figure 3. Figure 4 shows typical layout of an evaluation board
corresponding to the schematic diagram. The following should be noted:
(1) Package pin designations are as shown in figure 2.
(2) Vg1, Vg2 are the Gate Voltages (negative) applied
at the pins of the package
(3) Vgg1=Vgg2=Vgg is the negative supply voltage at
the evaluation board terminal
(4) Vd1, Vd2 are the Drain Voltages (positive) applied
at the pins of the package
(5) Vdd1=Vdd2=Vdd is the positive supply voltage at
the evaluation board terminal
Figure 1
Package Outline and
Pin Designations
GND
RF Out
GND
Vd2
Vd1
GND
GND
RF In
GND
Vg1
Vg2
GND
GND
(PACKAGE BASE)
1
2
3
4
5
6
7
8
9
10
11
12
13
DescriptionPin #
Dimensions in inches
10
11
1
2
3
456
7
8
9
12
BOTTOM VIEW
TOP VIEW
10
11
0.030
A
0.015
1
2
3
456
7
8
9
12
0.200 SQ.
Raytheon
RMPA
2450
0.041
PLASTIC LID
SIDE SECTION
0.010
0.230
0.246
0.282
Figure 2
Functional Block
Diagram of
Packaged Product
RF IN
Pin# 8
RF OUT
Pin# 2
Vg1
Pin# 10
Vg2
Pin# 11
Vd1
Pin# 5
Vd2
Pin# 4
Ground
Pin# 1, 3, 6, 7, 9, 12, 13
RMPA2450-58
2.4-2.5 GHz GaAs MMIC Power Amplifier
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