Raytheon RMPA2053-103 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
ADVANCED INFORMATION
Revised November 14, 2001
Page 1
Characteristic performance data and specifications are subject to change without notice.
Description
Low backed-off power current consumption: 80 mA Itotal at 12 dBm
power output
Single polarity supply operation and power-down mode
30% power-added efficiency at +27.5 dBm typical WCDMA output power
Compact LCC package: 6.0 x 8.0 x 1.5 mm
3
50 ohm matched and DC blocked input/output
DC Power Management
Features
The RMPA2053-103 is a power amplifier module (PAM) for 3GPP Wideband CDMA (WCDMA) applications. The
PAM has been specifically designed for low current draw at low power levels while maintaining high power
efficiency.The PAM is internally matched to 50 ohms to minimize the use of external components. High poweradded efficiency and excellent linearity are achieved using Raytheon’s InGaP Heterojunction Bipolar Transistor
(HBT) process.
RMPA2053-103
3V WCDMA Power Amplifier Module with
Analog Bias Control
Electrical
Characteristics
2
Parameter Min Typ Max Unit
Operating Frequency 1920 1980 MHz
Gain
(Pout=27.5 dBm) 30 dB
Linear Output Power 27.5 dBm
PAE
(Pout=27.5 dBm) 30 %
ACPR1
3
-38 dBc
ACPR2
4
-52 dBc
Noise Power
(Pout ≤ 27.5 dBm) -140 -135 dBm/Hz
Parameter Min Typ Max Unit
Input VSWR (50Ω) 2.0:12.5:1
Itotal at 27.5 dBm Pout 550 mA
Itotal at 12 dBm Pout 80 mA
Stability (All spurious)
5
-65 dBc
Harmonics Pout ≤ 27.5 dBm
2fo, 3fo, 4fo -30 dBc
Shutdown Current
6
<1 uA
Vcc 3.1 3.4 4.6 V
Notes:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2. All parameters met at Tc =+25°C, Vcc =+3.4V, f=1950 MHz, Vbias1,2=2.0V, Venbl=2.7V and load VSWR ≤ 1.2:1.
3. Continuous HPSK modulated carrier in a 3.84 MHz bandwidth, UL reference measurement channel (12.2 kbps), 3GPP TS 25.101 Annex A.2.1
(1 DPCCH @ 15 ksps, 1 DPDCH @ 60 ksps, DPCCH/DPDCH = -6 dB, OVSF code 16), +/-5 MHz.
4. Continuous HPSK modulated carrier in a 3.84 MHz bandwidth, UL reference measurement channel (12.2 kbps), 3GPP TS 25.101 Annex A.2.1
(1 DPCCH @ 15 ksps, 1 DPDCH @ 60 ksps, DPCCH/DPDCH = -6 dB, OVSF code 16), +/-10 MHz.
5. Output VSWR ≤ 6:1inband, all phase angles.
6. No applied RF signal. Vcc=+3.4V nominal, Venbl=0V.
Absolute
Maximum
Ratings
1
Parameter Symbol Value Units
Supply Voltages Vcc1, Vcc2, and Vbias 5 V
Bias Voltage 1 and 2 Vba1, Vba2 2.5 V
Chip Enable Venbl 3.0 V
RF Input Power Pin +5 dBm
Case Operating Temperature Tc -30 to +85 °C
Storage Temperature Tstg -40 to +110 °C
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
ADVANCED INFORMATION
Revised November 14, 2001
Page 2
Characteristic performance data and specifications are subject to change without notice.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
NC
Venbl
GND
Vba1 and Vba2
Vba1 and Vba2
GND
NC
NC
GND
RF Out
GND
Vld
NC
GND
Vcc2
Vcc2
GND
Vcc1
Vbias
GND
RF In
GND
DescriptionPin #
RMPA2053-103
3V WCDMA Power Amplifier Module with
Analog Bias Control
Figure 1
Package Outline and
Pin Designations
1.5
SIDE
TOP VIEW
(Through Package)
GND
171819 16 131415 12
32147658
10
21
9
11
20
22
RF OUT
RF IN
Venbl
NC
Vld
Vcc1
Vbias
Vcc2
NC
NC
NC
Vba1
Vba2
Gnd
Gnd
Gnd
Gnd
6.0
1.00
0.50
BOTTOM VIEW
0.10
0.25
3.0
3.5 3.3
8.0
5.5
0.10
0.50
Dimensions in mm
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