Raytheon RMPA1953-103 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
ADVANCED INFORMATION
Revised November 14, 2001
Page 1
Characteristic performance data and specifications are subject to change without notice.
Description
Single positive-supply operation and power-down mode
Low backed-off power current consumption: 75 mA @ 12 dBm Pout
30% power-added efficiency at +28.5 dBm CDMA average output power
Compact LCC package: 6.0 x 8.0 x 1.5 mm
3
50 ohm matched and DC blocked input/output
Advanced Digital Bias Control and DC Power Management
Features
The RMPA1953-103 is a power amplifier for CDMA and CDMA2000-1X personal communications system (PCS)
applications. The PA is internally matched to 50 ohms to minimize the use of external components. Advanced DC
power management reduces current consumption during peak phone usage at backed-off RF power levels.
Advanced digital bias control reduces the number of interface components to baseband. High power-added
efficiency and excellent linearity are achieved using Raytheon’s InGaP Heterojunction Bipolar Transistor (HBT)
technology.
RMPA1953-103
3V PCS CDMA & CDMA2000 Power Amplifier
Module with Digital Bias Control
Electrical
Characteristics
2
Parameter Min Typ Max Unit
Operating Frequency 1850 1910 MHz
Gain
(Po=12 dBm) 22 28 dB
(Po=28.5 dBm) 27 30 34 dB
Linear Output Power 28.5 dBm
CDMA PAE
(Po=28.5 dBm) 30 %
(Po=19 dBm) 8 %
ACPR
3
-47 -51 dBc
ACPR2
4
-56 dBc
Parameter Min Typ Max Unit
Noise Power
(Po ≤ 28.5 dBm) -137 dBm/Hz
Input VSWR (50Ω) 2.0:12.5:1
Itotal @28.5 dBm Pout 680 mA
Itotal @12 dBm Pout 75 mA
Stability (All spurious)
5
-65 dBc
Harmonics (Po ≤ 28.5 dBm)
2fo, 3fo, 4fo -30 dBc
Power Shutdown Current
6
<1 uA
Vcc 3.1 3.4 4.6 V
Notes:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2. All parameters met at Tc =+25°C, Vcc =+3.4V, Vref=+2.9V, f=1880 MHz and load VSWR ≤ 1.2:1.
3. Po ≤ 28.5 dBm at Vcc=3.4V; CDMA Waveform measured using the ratio of average power within a 1.23 MHz channel to average power
within a 30 kHz bandwidth at + 1.25 MHz offset.
4. Po ≤ 28.5 dBm at Vcc=3.4V; CDMA Waveform measured using the ratio of average power within a 1.23 MHz channel to average power
within a 30 kHz bandwidth at +1.98 MHz offset.
5. Output VSWR ≤ 6:1, all phase angles.
6. No applied RF signal. Vcc=+3.4V nominal, Venbl=+0.2V maximum.
Absolute
Maximum
Ratings
1
Parameter Symbol Value Unit
Supply Voltages Vcc1, Vcc2, and Vbias 5 V
Bias Voltage 1 and 2 Vba1, Vba2 2.5 V
Chip Enable Venbl 3.0 V
RF Input Power Pin +5 dBm
Case Operating Temperature Tc -30 to +85 °C
Storage Temperature Tstg -55 to +150 °C
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
ADVANCED INFORMATION
Revised November 14, 2001
Page 2
Characteristic performance data and specifications are subject to change without notice.
1.5
SIDE
TOP VIEW
(Through Package)
GND
171819 16 131415 12
32147658
10
21
9
11
20
22
RF OUT
RF IN
Venbl
Vref
Vld
Vcc1
Vbias
Vcc2
NC
NC
NC
Vba1
Vba2
Gnd
Gnd
Gnd
Gnd
6.0
1.00
0.50
BOTTOM VIEW
0.10
0.25
3.0
3.5 3.3
8.0
5.5
0.10
0.50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Vref
Venbl
GND
Vba1 and Vba2
Vba1 and Vba2
GND
NC
NC
GND
RF Out
GND
Vld
NC
GND
Vcc2
Vcc2
GND
Vcc1
Vbias
GND
RF In
GND
DescriptionPin #
Figure 1
Package Outline and Pin
Designations
Dimensions in mm
0.5mm x 0.5mm pad at 1.0mm pitch
RMPA1953-103
3V PCS CDMA & CDMA2000 Power Amplifier
Module with Digital Bias Control
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
ADVANCED INFORMATION
Revised November 14, 2001
Page 3
Characteristic performance data and specifications are subject to change without notice.
RMPA1953-103
3V PCS CDMA & CDMA2000 Power Amplifier
Module with Digital Bias Control
Figure 2
Functional Block
Diagram
Parameter Symbol Value Unit Max Units
Supply Voltage Vcc 3.1 3.4 4.5 V
RF Input Power
1
Pin -89 0 +3 dBm
CDMA Output Power Range Pout -55 +28.5 dBm
Vld Hi Power Vld floating V
Vld Low Power Vld 2.5 2.9 V
Bias Control hi Vba1 and 2 2.38 2.83 V
Bias Control low Vba1 and 2 0.00 0.45 V
Enable Control Voltage high Ven_hi 2.38 2.83 V
Enable Contol Voltage low Ven_lo 0.00 0.45 V
Reference Voltage Vref 2.9 3.50 V
Recommended
Operating Conditions
Operational Control
Typical RF input power for
CDMA Pout = +28.5 dBm
Vcc1, 2 and
Vba1 and Vld Vbias Pins Venbl Pout PAE Itotal
Vba2 Pins Pin (V) Tied Together Pin (V) (dBm) (%) typ. (mA) typ.
High Power 2.5V Lo 3.4 V 2.7 28.5 30 680
Operation CDMA High
Power
Threshold 0V Hi 3.4 V 2.7 19.0 15 150
Power 2.7 CDMA
Operation Threshold
power for Vld
High Switch
Low Power 0V Hi 3.4 V
Operation 2.7 CDMA Low 2.7 12.0 6 75
Power
RF OUT
Output
Match
Interstage Match
Bias
Vba1 Venbl Vba2
Bias
Input
Match
Vref
Vcc2 VldVcc1 Vbias
RF IN
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