Raytheon RMPA1901-53 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised May 14, 1999
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Parameter Min Typ Max Unit
Harmonics (Po ≤ 28.5 dBm)
2fo, 3fo, 4fo -30 dBc
Efficiency
Po = 800 mW, Vdd=5.8V 34 %
Po = 40 mW, Vdd=5.8V 5 %
ACPR (Offset ≤± MHz)
2
50 dBc
Noise Figure (over temp.) 7.0 dB
Quiescent Current 80 mA
Vdd 5.8 Volts
Vg1/Vg2, Vg3 (<5 mA)
3
-1.5 -0.3 Volts
Case Operating Temp -30 +90 °C
Description
Positive supply voltage of 5.8V, nominal
Efficiency of 34%, typical, for digital CDMA power out of 28.5 dBm
ACPR of 50 dBc, typical, for digital CDMA power out of 28.5 dBm
Small outline metal based quad plastic package
Features
The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance
parameters may be slightly adjusted by “tweaking” the off-chip matching components. The amplifier circuit design
is a single ended configuration that utilizes harmonic tuning for increased power added efficiency and linearity. The
device uses Raytheon’s Pseudomorphic High Electron Mobility Transistor (pHEMT) process.
Electrical
Characteristics
Specifications at
25°C unless
otherwise noted.
Parameter Min Typ Max Unit
Frequency Range 1850 1910 MHz
1710 1785 MHz
Gain (Small Signal) 29 dB
Gain Variation vs Temp -0.03 dB/°C
Gain Linearity
(0 dBm ≤ Pout ≤ 28.5 dBm) -1.0 +1.0 dB
Noise Power
(1930-1990 MHz)
(All Power Levels) -135 dBm/Hz
Input VSWR (50Ω) 2.0:1 --Stability (All spurious)
1
-70 dBc
Notes:
1. Source/Load VSWR ≤ 3:1 (All Angles, -50 dBm<Po<28.5 dBm) or Load VSWR ≥ 20:1 (Out of Band, All Angles, Tc=-40 to +110°C)
2. Po ≤ 28.5 dBm at Vdd=5.8V; CDMA Waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30
kHz bandwidth at a 1.25 MHz offset.
3. Vg1=Vg2 and Vg3 adjusted for Quiescent Current of Idq1 & Idq2 = 35 mA, and Idq3 = 45 mA.
Absolute
Maximum
Ratings
Parameter Symbol Value Units
Positive DC Voltage Vd1,Vd2 + 9 Volts
Negative DC Voltage Vg1,Vg2 - 6 Volts
Simultaneous (Vd-Vg) Vdg +12 Volts
RF Input Power (from 50-Ohm source) PIN +10 dBm
Operating Case Temperature TC -30 to +90 °C
Storage Temperature Range TS
tg
-35 to +110 °C
Thermal Resistance (Channel to case) R
jc
+18 °C/W
RMPA1901-53
PCS CDMA GaAs MMIC
Power Amplifier
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised May 14, 1999
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
The following describes a procedure for evaluating the RMPA1901-53, a monolithic high efficiency power amplifier,
in a surface mount package, designed for use in Personal Communication Systems (PCS) utilizing Code Division
Multiple Access (CDMA). Figure 2 shows the functional block diagram of the packaged product. Figure 1 shows
the package outline and the pin designations. It should be noted that RMPA1901-53 requires external passive
components for DC bias and RF output matching circuits. A recommended schematic of circuits is shown in Figure
3. The gate biases for the three stages of the amplifier are set by simple resistive voltage dividers. Potentiometers
R1 to R3 are used to set the required quiescent currents of the amplifier stages. Figure 4 shows a typical layout of
an evaluation board, corresponding to the schematic circuits of figure 3. The following should be noted:
Application
Information
(1) Pin designations are as shown in figure 2.
(2) Vg1, Vg2 and Vg3 are the Gate Voltages (negative)
applied at the pins of the package
(3) Vgg1, Vgg2 and Vgg3 are the negative supply
voltages at the evaluation board terminals
(4) Vd1, Vd2 and Vd3 are the Drain Voltages (positive)
applied at the pins of the package
(5) Vdd1, Vdd2 and Vdd3 are the positive supply
voltages at the evaluation board terminals
Figure 1
Package Outline and
Pin Designations
NC
RF Out & Vd3
RF Out & Vd3
Vd1
GND
Vg1
RF IN
GND
Vg2
Vd2
GND
Vg3
GND (METAL BASE)
1
2
3
4
5
6
7
8
9
10
11
12
13
DescriptionPin #
Dimensions in inches
Figure 2
Functional Block
Diagram of
Packaged Product
(RMPA1901-53)
RF IN
Pin# 7
RF OUT & Vd3
Pin# 2, 3
Vg2
Pin# 9
Vg3
Pin# 12
Vd2
Pin# 10
NC
Pin# 1
NC
Pin# 1
GND
Pin# 5, 8, 11, 13
10
11
1
2
3
456
7
8
9
12
BOTTOM VIEW
TOP VIEW
10
11
0.030
A
0.015
1
2
3
456
7
8
9
12
0.200 SQ.
RAY
RMPA
1901-53
0.041
13
PLASTIC LID
SIDE SECTION
0.069 MAX.
0.010
0.230
0.246
0.282
Vd1
Pin# 4
Vg1
Pin# 6
RMPA1901-53
PCS CDMA GaAs MMIC
Power Amplifier
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