Raytheon RMPA1751-102 Datasheet

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised August 27, 2001

Page 1

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

ADVANCED INFORMATION

Description

K Advanced DC power-management extends average phone-battery life!
K Single positive-supply operation and power-down mode.
K 35% power-added efficiency at +29 dBm CDMA average output power.
K Compact LCC package: 6.0 x 6.0 x 1.5 mm

3

.

K 50 ohm matched and DC blocked input/output

Features

The RMPA1751-102 is a small-outline, power amplifier module (PAM) for Korean-band CDMA Personal
Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management

provides an effective means to reduce current consumption during peak phone usage at backed-off RF power
levels. Analog or digital bias control enables the handset designer to optimize gain, linearity and power-added

efficiency over a wide range of output powers, depending on the power-density profile of the wireless network.
High power-added efficiency and excellent linearity are achieved using Raytheon’s Heterojunction Bipolar
Transistor (HBT) process.

Electrical

Characteristics

3

Parameter Min Typ Max Unit

Operating Frequency 1720 1780 MHz
Gain

(Po=0 dBm) 21 24 dB

(Po=28 dBm) 25 27 dB
Linear Output Power 29 dBm
Power-Added Efficiency

(Po=16 dBm) 6.0 %

(Po=28 dBm) 27 30 %

(Po=29 dBm) 33 %

ACPR (Offset ≥ 1.25 MHz)

4

-49 -46 dBc

Noise Figure 5 6 dB

Noise Power (Po ≤ 29 dBm) -135 dBm/Hz
Input VSWR (50Ω) 2.0:12.5:1
Output VSWR (50Ω) 3.5:1

Parameter Min Typ Max Unit

Stability (All spurious)

5

-70 dBc

Harmonics (Po ≤ 29 dBm)

2fo, 3fo, 4fo -30 dBc

Quiescent Current

(Vref=2.7V) 60 80 100 mA
(Vref=2.0V) 50 mA
(Vref=1.7V) 35 mA

Power Shutdown Current

6

210uA
Vcc 3.0 3.5 4.5 V
Vref 1.7 2.7 3.2 V
Iref 13 mA
Case Operating

Temperature -30 +85 °C

Notes:

1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

2. Typical RF input power for CDMA Pout=+28 dBm.

3. All parameters met at Tc =+25°C, Vcc =+3.5V, Vref=+2.7V, f=1750 MHz and load VSWR ≤ 1.2:1.

4. Po ≤ 28 dBm at Vcc=3.5V; CDMA Waveform measured using the ratio of average power within a

1.23 MHz channel to average power within a 30 kHz bandwidth at + 1.25 MHz offset.

5. Load VSWR ≤ 6:1, all phase angles.

6. No applied RF signal. Vcc=+3.5V nominal, Vref=+0.2V maximum.

Absolute

Maximum

Ratings

1

Parameter Symbol Min Typical Max Units

Supply Voltage Vcc 3.5 6 V
Reference Voltage Vref 1.5 2.7 4.0 V
RF Input Power

2

P

in

+1 +7 dBm

Load VSWR V

SWR

1.2:1 10:1

Case Operating Temperature T

c

-40 +25 +110 °C

Storage Temperature T

stg

-55 +25 +150 °C

RMPA1751-102

3V PCS CDMA Power
Amplifier Module

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised August 27, 2001

Page 2

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

ADVANCED INFORMATION

Figure 1

Package Outline and

Pin Designations

Figure 2

Functional Block

Diagram

VCC=3.5V (nom)

VREF=2.7V (nom)

1720-1780 MHz

50 Ohms I/O

N/C

(4)

Input
Stage

Output

Stage

Output Stage

Bias

Input Stage

Bias

MMIC

PA Module

GND (Pin 7)-

(Package Base)

RF OUT

(5)

VCC

(1)

RF IN

(2)

VREF

(3)

GND

(6)

Interstage

Match

Collector

Bias

(Topside View)

Input

Matching

Network

Output

Matching

Network

Reference

Adjust

Dimensions in inches (mm)

Vcc
RF In
VREF
N/C
RF Out
GND
GND

1
2
3
4
5
6
7

DescriptionPin #

RMPA1751-102

3V PCS CDMA Power
Amplifier Module

(5.08)

(2.46)

(2.54)

(4.82)

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised August 27, 2001

Page 3

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

ADVANCED INFORMATION

With device marking oriented right side up, RF IN is on the left and RF OUT is on the right.
Blue wire is collector DC voltage input (pin 1). VCC= +3.5V nominal.
Brown wire is reference DC voltage input (pin 3). Vref=+ 2.7V nominal to obtain Iccq= 80mA. Operation at lower

or higher quiescent currents can be achieved by decreasing or increasing Vref voltage relative to +2.7V.
First apply +3.5V to the collector supply (blue wire). Next apply +2.7V to the reference supply to brown wire.

Quiescent collector current with no RF applied will be about 80 mA. Reference supply current with or without RF
applied will be about 13 mA. When turning amplifier off, reverse power supply sequence.

Apply -20dBm RF input power at Korean PCS frequency (1720 -1780MHz). After making any initial small signal
measurements at this drive level, input power may be increased up to a maximum of +6dBm for large signal,
single-tone or digital CDMA measurements. Do not exceed +6dBm input power.

Evaluation Board

Instructions

Figure 3

Evaluation Board

Layout and Schematic

2

34

5

6

7

1

C1 *

2.2 uF

VCC

SMA1
RF IN

SMA2

RF OUT

VREF

GND

N/C

(package base)

50 ohm TRL 50 ohm TRL

* Minimum VCC bypass capacitance recommended for best RF performance.

Raytheon

RMPA1751

PPYYWWZZZ

PCB Specifications:
Material: Rogers RO4003
Dimensions: 2.0”x1.5”x0.032”
Metallization: 1/2 OZ Copper

Cladding

Vcc: +3.5V
Icc: ≅ 80mA
BLUE WIRE

RF IN

Vref: +2.7V
Ibb: ≅ 13 ma
BROWN WIRE

GND

RF OUT

GND

N/C

RF OUT

RF IN

VCC

G656524
V1

Raytheon

RMPA1951 - 102

PPYYWWXX

(ALT)PPYY WWZZZ

VREF

RMPA1751-102

3V PCS CDMA Power
Amplifier Module

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised August 27, 2001

Page 4

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

ADVANCED INFORMATION

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

K Precautions to Avoid Permanent Device Damage:

– Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain

in their original packaging until component placement to ensure no contamination or damage to RF, DC &
ground contact areas.

– Device Cleaning: Standard board cleaning techniques should not present device problems provided that the

boards are properly dried to remove solvents or water residues.

– Static Sensitivity: Follow ESD precautions to protect against ESD damage:

• A properly grounded static-dissipative surface on which to place devices.

• Static-dissipative floor or mat.

• A properly grounded conductive wrist strap for each person to wear while handling devices.

– General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair

of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply
excessive pressure to the top of the lid.

– Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are

protected and require no special storage conditions. Once the sealed bag has been opened, devices should
be stored in a dry nitrogen environment.

K Device Usage: Raytheon recommends the following procedures prior to assembly.

– Dry-bake devices at 125

°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking

temperature.
– Assemble the dry-baked devices within 7 days of removal from the oven.
– During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity

and a maximum temperature of 30

°C

– If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must

be repeated.

K Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand

soldering is not recommended.

– Reflow

Profile

• Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to
prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A
typical heating rate is 1- 2°C/sec.

• Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board
and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at
150°C.

• Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to
thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at
temperature can enhance the formation of inter-metallic compounds at the lead/board interface and
may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely
driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering
temperatures should be in the range 215-220°C, with a maximum limit of 225°C.

• Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid
cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below
indicates the recommended soldering profile.

K Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the

heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness.

K Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat

gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than
5 seconds. No more than 2 rework operations should be performed.

Application

Information

RMPA1751-102

3V PCS CDMA Power
Amplifier Module

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised August 27, 2001

Page 5

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

ADVANCED INFORMATION

Figure 4

Soak at

150

o

C for

60 Sec

45 Sec

(M a x)

above
183

o

C

1

o

C/Sec

183

o

C

10 Sec

1oC/Sec

0

20

40

60

80

100

120

140

160

180

200

220

240

0 60 120 180 240 300

Time (Sec)

Deg C

Recommended Solder Reflow Profile

RMPA1751-102

3V PCS CDMA Power
Amplifier Module

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised August 27, 2001

Page 6

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

ADVANCED INFORMATION

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

45.0

-15 -12.5 -10 -7.5 -5 -2.5 0 2.5 5 7.5

Input Power (dBm)

Output Power (dBm), Gain (dB), PAE (%)

Output Power
Power Gain
PAE

Tested at:

K Vcc=3.5V
K Vref=2.7V
K f=1750 MHz

K Tc=+25°C

Performance

Data

Figure 5

Single-Tone Output Power, Gain and Power-Added Efficiency

RMPA1751-102

3V PCS CDMA Power
Amplifier Module

15.0

17.5

20.0

22.5

25.0

27.5

30.0

0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0

Output Power (dBm)

Gain (dB)

Tc= +25 deg C
Tc= -30 deg C
Tc= +85 deg C

Tested at:

K Vcc=3.5V
K Vref=2.7V
K f=1750 MHz
K Pout < 29 dBm

Figure 6

CMDA Gain vs Output Power