Raytheon RMPA0953-103 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
ADVANCED INFORMATION
Revised November 14, 2001
Page 1
Characteristic performance data and specifications are subject to change without notice.
Description
Single positive-supply operation and power-down mode
Low Backed Off current consumption: 65 mA @ 12 dBm output power
34% power-added efficiency at +27.4 dBm CDMA average output power
48% AMPS power-added efficiency at +30.7 dBm AMPS output power
Compact LCC package: 6.0 x 8.0 x 1.5 mm
3
50 ohm matched and DC blocked input/output
Advanced Digital Bias Control
Features
The RMPA0953-103 power amplifier module (PAM) for AMPS, CDMA and CDMA2000-1X Cellular applications. The
PAM is internally matched to 50 ohms to minimize the use of external components. Advanced DC power
management reduces current consumption during peak phone usage at backed-off RF power levels. Advanced
Digital Bias control reduces the number of interface components to baseband. High power-added efficiency and
excellent linearity are achieved using Raytheon’s InGaP Heterojunction Bipolar Transistor (HBT) process.
RMPA0953-103
3V Cellular AMPS and CDMA Power Amplifier
Module with Digital Bias Control
Electrical
Characteristics
2
Parameter Min Typ Max Unit
Operating Frequency 824 849 MHz
Gain
(Po=12 dBm) 22 28 dB
(Po=27.4 dBm) 27 30 34 dB
CDMA Output Power 27.4 dBm
CDMA PAE
(Po=27.4 dBm) 34 %
ACPR1
3
-47 -52 dBc
ACPR2 -56 dBc
Input VSWR (50Ω) 2.0:1 2.5:1
Parameter Min Typ Max Unit
Itotal @ 27.4 dBm Pout 425 mA
Itotal @ 12 dBm Pout 65 mA
Stability (All Spurious)
4
-65 dBc
AMPS Power Output 30.7 dBm
AMPS PAE 48 %
Harmonics Po ≤ 27.4 dBm
2fo, 3fo, 4fo -30 dBc
Shutdown Current
4
<1 uA
Vcc 3.0 3.4 4.6 V
Notes:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2. All parameters met at Tc =+25°C, Vcc =+3.4V, Vref=+2.7V, f=836.5 MHz and load VSWR ≤ 1.2:1.
3. Po ≤ 27.4 dBm at Vcc=3.4V; CDMA Waveform measured using the ratio of average power within a
1.23 MHz channel to average power within a 30 kHz bandwidth at + 885 KHz offset.
4. No applied RF signal. Vcc=+3.4V nominal, Vref=+0.2V maximum.
Absolute
Maximum
Ratings
1
Parameter Symbol Value Units
Supply Voltages Vcc1, Vcc2, and Vbias 5 V
Bias Voltage 1 and 2 Vba1, Vba2 2.5 V
Chip Enable Venbl 3.0 V
RF Input Power Pin +5 dBm
Case Operating Temperature Tc -30 to+85 °C
Storage Temperature Tstg -55 to+150 °C
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
ADVANCED INFORMATION
Revised November 14, 2001
Page 2
Characteristic performance data and specifications are subject to change without notice.
1.5
SIDE
TOP VIEW
(Through Package)
GND
171819 16 131415 12
32147658
10
21
9
11
20
22
RF OUT
RF IN
Vcc1
Vbias
Vld
Venbl
Vref
Vba1
NC
NC
NC
Vcc2
Gnd
Gnd
Gnd
Gnd
6.0
1.00
0.50
BOTTOM VIEW
0.10
0.25
3.0
3.5 3.3
8.0
5.5
0.10
0.50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Vbias
Vcc1
GND
Vcc1
Vcc2
GND
NC
NC
GND
RF Out
GND
Vld
NC
GND
Vba2
Vcc1
GND
Venbl
Vref
GND
RF In
GND
DescriptionPin #
Figure 1
Package Outline and Pin
Designations
Dimensions in mm
0.5mm x 0.5mm pad at 1.0mm pitch
Vba2
RMPA0953-103
3V Cellular AMPS and CDMA Power Amplifier
Module with Digital Bias Control
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
ADVANCED INFORMATION
Revised November 14, 2001
Page 3
Characteristic performance data and specifications are subject to change without notice.
RMPA0953-103
3V Cellular AMPS and CDMA Power Amplifier
Module with Digital Bias Control
Figure 2
Functional Block
Diagram
Parameter Symbol Min Typical Max Units
Supply Voltage Vcc 3.1 3.4 4.5 V
Power Shutdown Mode Vref
off
00.2V
RF Input Power
1
Pin -89 0 +3 dBm
CDMA Output Power Range Pout -55 +29 dBm
Vld High Vld_Hi 2.5 2.9 V
Vld Low Vld_Lo float V
Bias Control hi Vba1,2_hi 2.38 2.83 V
Bias Control low Vba1,2_lo 0.00 0.45 V
Enable Control Voltage high Venbl_hi 2.38 2.83 V
Enable Contol Voltage low Venbl_lo 0 0.45 V
Reference Voltage Vref 2.30 2.9 3.50 V
Recommended
Operating Conditions
Operational
Control
Vcc1,2 and
Vba1 and Vld Vbias Pins Venbl Pout PAE Itotal
Vba2 Pins Pin (V) Tied Together Pin (V) (dBm) (%) typ. (mA) typ.
High Power 2.5V Lo 3.4 V 2.7 27.4 34 425
Operation CDMA High
Power
Threshold 0V Hi 3.4 V 2.7 19.0 15 150
Power 2.7 CDMA
Operation Threshold
power for Vld
HIGH Switch
Low Power 0V Hi 3.4 V
Operation 2.7 CDMA Low 2.7 12.0 6 65
Power
Notes:
1. Typical RF input power for CDMA Pout = +27.4 dBm.
RF OUT
Output
Match
Interstage Match
Bias
Vba1 Venbl Vba2
Bias
Input
Match
Vref
Vcc2 VldVcc1 Vbias
RF IN
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