Raytheon RMM5030 Datasheet

Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised December 7, 1998
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
Performance
Characteristics
37.8 dBm typical power into 25 @ 2 dB compressionPower added efficiency is greater than 20%14 dB small signal gainSeparate stage biasing to maximize efficiencyInput match VSWR is less than 2.0:1Via hole groundingChip Size: 223 mils x 213 mils x 4 mils
Features
Note:
1. Bias Conditions: Vds = 7 Volts, Ids = Idss/2, and all specifications guaranteed at 25 °C.
2. Bias Conditions: Vds = 2.5V, and all specifications guaranteed at 25°C.
Parameter Min Typ Max Unit
RF Performance
Specifications
1
Frequency Range 9 - 10 GHz RF Output Power @ -1 dBc 35 37.0 dBm RF Output Power @ -2 dBc 36 37.8 - dBm Small Signal Gain 13 14.0 - dB
1. Devices must be solder mounted with 80/20 Au-Sn for proper heat sinking.
2. Input/output ports, when paralleled, are 25
. A coupler combiner or transformer is required to match to 50
for this configuration.
3. Electrical data is for both channels operating in parallel into 25
terminating impedances. Data is specified for
CW operation. Under CW operation, power output and gain may be degraded by up to 0.5 dB depending on the effectiveness of heat sinking
4. DC biasing:
a)First apply the gate bias, typically -1.5V to -2.0V is recommended. Next, increase the drain voltage to 5~7V b)For maximum output power, the drain voltage can be increased to 7V c)For maximum efficiency, use a drain voltage of 5V with a gate voltage of approximately -1.5V
Application
Notes
RMM5030
9-10 GHz GaAs Power Amplifier MMIC
Parameter Min Typ Max Unit
DC FET Performance
Specifications
2
Saturation Current - 7560 9072 mA
(Vgs = 0V)
Transconductance - 3456 - mS
(-1V < Vgs < 0V)
Pinchoff Voltage -5.0 -3.2 -2.0 Volts Thermal Resistance: Thermal Resistance @ 3.7 °C/W
Tbc=80°C (Tbc = Temp. @ back of chip)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised December 7, 1998
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 1
Bonding Pads
Notes:
1. Device is solder mounted with 80/20 Au/Sn onto Cu shim or ridge, which is in turn blazed to Cu-W or Cu-Mo-Cu carrier for proper heat sinking.
2. To bias up the device, first apply the gate bias, typically -1.5V to -2.0V is recommended. Next, increase the drain voltage to 5 ~ 7 volts. Finally readjust gate bias, VG, for proper drain current.
Figure 2
Example of
Wilkinson Power
Combiner Module
RMM5030
9-10 GHz GaAs Power Amplifier MMIC
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