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Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised December 7, 1998
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
The Raytheon RMM5030 is an X-band two-stage dual channel GaAs MMIC power amplifier operating over 9-10
GHz which can be configured to provide either 34 dBm of minimum saturated single channel power into 50 ohms
or 37 dBm combined. This unique chip configuration incorporates a pair of parallel channels each containing two
reactively matched stages consisting of 2x1.4 mm FETs driving 4x2.0 mm FETs for a total FET periphery of 21.6
mm. Either channel can be operated as an independent amplifier in a 50 ohm system to provide 34 dBm power
output with the adjacent channel retained as a spare. Alternatively the two channels can be combined to provide 37
dBm power output. In this case an external transformer or combiner is required for operation in a 50 ohm system.
The FETs are fabricated using Raytheon’s proven 0.5 mm Ti/Pt/Au gate MESFET process. The RMM5030 is ideally
suited for power stage applications where limited space is available. It also allows the user to bias stages
individually to customize performance and maximize amplifier efficiency.
Description
Performance
Characteristics
37.8 dBm typical power into 25 Ω @ 2 dB compression
Power added efficiency is greater than 20%
14 dB small signal gain
Separate stage biasing to maximize efficiency
Input match VSWR is less than 2.0:1
Via hole grounding
Chip Size: 223 mils x 213 mils x 4 mils
Features
Note:
1. Bias Conditions: Vds = 7 Volts, Ids = Idss/2, and all specifications guaranteed at 25 °C.
2. Bias Conditions: Vds = 2.5V, and all specifications guaranteed at 25°C.
Parameter Min Typ Max Unit
RF Performance
Specifications
1
Frequency Range 9 - 10 GHz
RF Output Power @ -1 dBc 35 37.0 dBm
RF Output Power @ -2 dBc 36 37.8 - dBm
Small Signal Gain 13 14.0 - dB
1. Devices must be solder mounted with 80/20 Au-Sn for proper heat sinking.
2. Input/output ports, when paralleled, are 25
Ω. A coupler combiner or transformer is required to match to 50Ω
for this configuration.
3. Electrical data is for both channels operating in parallel into 25
Ω terminating impedances. Data is specified for
CW operation. Under CW operation, power output and gain may be degraded by up to 0.5 dB depending on the
effectiveness of heat sinking
4. DC biasing:
a)First apply the gate bias, typically -1.5V to -2.0V is recommended. Next, increase the drain voltage to 5~7V
b)For maximum output power, the drain voltage can be increased to 7V
c)For maximum efficiency, use a drain voltage of 5V with a gate voltage of approximately -1.5V
Application
Notes
RMM5030
9-10 GHz GaAs Power Amplifier MMIC
Parameter Min Typ Max Unit
DC FET Performance
Specifications
2
Saturation Current - 7560 9072 mA
(Vgs = 0V)
Transconductance - 3456 - mS
(-1V < Vgs < 0V)
Pinchoff Voltage -5.0 -3.2 -2.0 Volts
Thermal Resistance:
Thermal Resistance @ 3.7 °C/W
Tbc=80°C (Tbc = Temp.
@ back of chip)
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Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised December 7, 1998
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 1
Bonding Pads
Notes:
1. Device is solder mounted with 80/20 Au/Sn onto Cu shim or ridge, which is in turn blazed to Cu-W or Cu-Mo-Cu carrier for
proper heat sinking.
2. To bias up the device, first apply the gate bias, typically -1.5V to -2.0V is recommended. Next, increase the drain voltage
to 5 ~ 7 volts. Finally readjust gate bias, VG, for proper drain current.
Figure 2
Example of
Wilkinson Power
Combiner Module
RMM5030
9-10 GHz GaAs Power Amplifier MMIC