Raytheon RMLA3565-53 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised September 24, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRELIMINARY INFORMATION
The Raytheon RMLA3565-58 is a single bias wideband low noise MMIC amplifier that meets the following
specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits no
external gate bias supply. This device uses Raytheon’s advanced 0.25 µm PHEMT process to provide low noise,
high linearity and low current..
Description
Absolute
Maximum
Ratings
Electrical
Characteristics
1
18.0 dB Gain
1.35 dB Noise Figure
Single Positive Bias
Small Outline Metal Base Quad Plastic Package
Features
Notes:
1. Operated at 25 °C and Vdd=4.0V, 50 Ω system
2. Pin = -20 dBm, Freq 2.5 - 6.5 GHz
3. Data de-embedded from fixture loss
Parameter Symbol Value Unit
Positive Drain DC Voltage V
dd
6.5 V
RF Input Power (from 50W source) P
IN
(CW) 0 dBm
Drain Current I
dd
110 mA
Case Operating Temperature T
case
-40 to 100 °C
Storage Temperature Range T
storage
-40 to 110 °C
Soldering Temperature T
solder
220 °C
Thermal Resistance 77.5 °C/W
RMLA3565-58
Wideband Low Noise MMIC Amplifier
Parameter Min Typ Max Unit
Frequency Range 3.5 6.5 GHz
Gain (Small Signal)
2
17.0 18.0 dB
Gain Variation vs Temp -0.013 dB/°C
Noise Figure
3
3.5 - 5 GHz 1.7 1.9 dB
5 - 6.5 GHz 1.3 1.4 dB
Parameter Min Typ Max Unit
Input/Output Return Loss -10.0 -5.0 dB
Power Out, P-1dB 8.0 9.0 dBm
IP3 @ 5.5GHz,-8dBm Out 21.0 dBm
Idd 70.0 90.0 mA
Vdd 3.0 4.0 6.0 V
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised September 24, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRELIMINARY INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier packaged in a
surface mount package. It may be noted that the chip is a fully monolithic single ended two stage amplifier for
3.5 to 6.5 GHz applications. Figure 1 shows the functional block diagram of the packaged product.
Test Fixture
Figure 2 shows the outline and pin-out descriptions for the packaged device. A typical test fixture schematic
showing external bias components is shown in figure 3. Figure 4 shows typical layout of an evaluation board
corresponding to the schematic diagram. A typical performance obtained from the test fixture is shown in figure
5. The following should be noted:
(1) Package pin designations are as shown in figure 2.
(2) Vd is the Drain Voltage (positive) applied at the pins of the package
(3) Vdd is the positive supply voltage at the evaluation board terminal
Application
Information
Figure 1
Functional Block
Diagram
RF IN
Pin# 8
RF OUT
Pin# 2
Ground
Pin# 1,3,4,6,9,10,11,13
Vd
Pin# 12
Ground
Pin# 7
Ground
Pin# 5
RMLA3565-58
Wideband Low Noise MMIC Amplifier
Figure 2
Outline
Dimensions
Dimensions in inches
Pin# Description
1GND
2 RF Out
3 GND
4 GND
5 GND
6 GND
7 GND
8 RF In
9 GND
10 GND
11 GND
12 Vd
13 GND
(Package Base)
PLASTIC LID
SIDE SECTION
0.069 MAX.
0.010
0.230
0.246
0.282
1
2
3
546
7
9
8
10
12
11
0.041
1
2
3
0.015
0.200 SQ.
TOP VIEWTOP VIEW
BOTTOM VIEW
54
6
7
9
8
10 12
11
0.030
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