Raytheon RMLA00400 Datasheet

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

www.raytheon.com/micro

ADVANCED INFORMATION

Revised November 14, 2001

Page 1

Characteristic performance data and specifications are subject to change without notice.

Description

 MHEMT
 High bandwidth: 40 GHz
 Low group delay
 Low power dissipation: ~450mW.
 Single ended output
 DC coupled
 Effective wideband gain stage
 Chip size 3.71 mm x 1.70 mm

Features

The Raytheon RMLA00400 is a very high speed Transimpedance Amplifier (TIA) MMIC for 40 Gb/s (OC768) fiber
optic systems. It is available in die form, and is manufactured using Raytheon’s advanced MHEMT process. The
TIA is used in conjunction with a photodetector to convert optical signals into a voltage output, or as a general
purpose low noise wideband gain stage.

RMLA00400

40 Gb/s Transimpedance Amplifier

Electrical

Characteristics

2,3

Parameter Min Typ Max Unit

Frequency Bandwidth (1 dB) 40 GHz
Frequency Bandwidth (3 dB) 45 GHz
Low frequency Cut-off 30 KHz
Gain 16 dB
Gain Flatness ±0.75 dB
Transimpedance 300 Ohms
Group Delay 30 pS p-p
Noise Figure 2.5 dB

Parameter Min Typ Max Unit

Output Voltage 400 mV p-p
Output Return Loss 15 dB
Quiescent Current 130 mA

Input Noise Current Density 25 pA/ √Hz

Vd 3.5 V
Vg

1 -3.5 V

Vg

2 2.5 V

Case Operating Temp -40 +85 °C

Notes:

1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

2. All parameters met at Tc = 25°C, Vd = 3.5V.

3. Measured in a 50 ohm system.

Absolute

Maximum

Ratings

1

Parameter Symbol Value Unit

Supply Voltage Vd +3.5 V
RF Input Power Pin -10 dBm

Case Operating Temperature Tc -40 to +85 °C
Storage Temperature Tstg -40 to +100 °C

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

www.raytheon.com/micro

ADVANCED INFORMATION

Revised November 14, 2001

Page 2

Characteristic performance data and specifications are subject to change without notice.

RMLA00400

40 Gb/s Transimpedance Amplifier

Figure 1

Functional Block

Diagram

Vg1 Vg2

Vd

RFin

RFout

Figure 2

Recommended

Application Schematic

Circuit Diagram

Vg1

Vd=Vg2=+3.5 V

RFin

RFout

100 pF

10,000 pF

L

Photodetector

Vb

R=125 Ω

Vg2

Vd

L= Bond Wire

L

100 pF

10,000 pF

Figure 3

Chip Layout and

Bond Pad Locations

(Chip Size=3.710

mm x 1.700 mm x

100 µm Typical,

Back of Chip is RF

and DC Ground)

Dimensions in mm

0.0 0.887 1.219 3.710

3.602

0.0

0.147

0.981

1.137

1.288

2.702

0.301

0.0

0.454

1.264

1.545

1.700

0.607