Raytheon RMBA09501A-58 Datasheet
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised November 14, 2001
Page 1
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
The RMBA09501A-58 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT
process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and
Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation. The
device is matched for 50 ohms input impedance.
Description
Absolute
Maximum
Ratings
Electrical
Characteristics
2
2 Watt Linear output power at 37 dBc ACPR1 for CDMA operation
OIP3 ≥43 dBc at 27 and 30 dBm power output
Small Signal Gain of > 30 dB
Small outline SMD package
Features
Notes:
1. Only under quiescent conditions - no RF supplied.
2. 50 ohm system, Vdd
= 7.0V, Tc = 25°C.
3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. ACPR1 measured at 885 KHz offset at a value ≥ 37 dBc. CDMA
Waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30 kHz bandwidth at an 885 MHz offset.
4. Ultra-linear OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone.
5. Gate Voltage can be adjusted to optimize the linearity of the amplifier for differing modulation systems. Default biasing is optimized for
CDMA (Ref. Note 3).
Parameter Symbol Value Unit
Drain Supply Voltage
1
Vdd +10 V
Gate Supply Voltage Vgs -5 V
RF Input Power (from 50 Ω source) Pin 5 dBm
Operating Case Temperature Tc -30 to +85 ºC
Storage Temperature Range Tstg -40 to +100 ºC
RMBA09501A-58
Cellular 2 Watt Linear GaAs MMIC Power
Amplifier
Parameter Min Typ Max Unit
Frequency Ranges 869 894 MHz
Gain (small signal) 30 32 dB
Gain variation:
Over frequency range +/-1.5 dB
Over temperature range +/-2.5 dB
Noise Figure 6 dB
Output power @ CDMA
3
33 dBm
OIP3
4
43 45 dBc
Parameter Min Typ Max Unit
PAE (At P1dB output power) 20 %
Input VSWR (50Ω) 2:1
Drain Voltage (Vdd) 7.0 Volts
Gate Voltage (Vgs)
5
-3 Volts
Quiescent current (Idq) 150, 400 mA
Thermal Resistance
(Channel to Case) Rjc 11 °C/W
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised November 14, 2001
Page 2
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The following describes a procedure for evaluating the RMBA09501A-58, a monolithic high efficiency power
amplifier, in a surface mount package, designed for use as a driver stage for Cellular base stations, or as the final
output stage for Micro- and Pico-Cell base stations. Figure 1 shows the package outline and the pin designations.
Figure 2 shows the functional block diagram of the packaged product. It should be noted that RMBA09501A-58
requires external passive components for DC bias and RF output matching circuits. A recommended schematic
circuit is shown in Figure 3. The gate biases for the two stages of the amplifier may be set by simple resistive
voltage dividers. Figure 4 shows a typical layout of an evaluation board, corresponding to the schematic circuits
of figure 3. The following designations should be noted:
(1) Pin designations are as shown in figure 1.
(2) Vg1 and Vg2 are the Gate Voltages (negative) applied at the pins of the package
(3) Vgg1 and Vgg2 are the negative supply voltages at the evaluation board terminals
(4) Vd1 and Vd2 are the Drain Voltages (positive) applied at the pins of the package
(5) Vdd1 and Vdd2 are the positive supply voltages at the evaluation board terminals
Note: The 2 terminals of Vdd1 and Vdd2 may be tied together.
The base of the package must be soldered on to a heat sink for proper operation.
Application
Information
RMBA09501A-58
Cellular 2 Watt Linear GaAs MMIC Power
Amplifier
AC Ground (g1)
Pin# 6
Figure 2
Functional Block
Diagram
RF IN
Pin# 8
RF OUT & Vd2
Pin# 1, 2, 3
Ground
Pin# 5, 7, 9, 13
Vg2
Pin# 11
AC Ground (g2)
Pin# 4
Vg1
Pin# 12
Vd1
Pin# 10
Figure 1
Package
Outline and Pin
Designations
Dimensions in inches
Pin# Description
1RF Out & Vd2
2RF Out & Vd2
3RF Out & Vd2
4 AC Ground (g2)
5 GND
6 AC Ground (g1)
7 GND
8RF In
9 GND
10 Vd1
11 Vg2
12 Vg1
13 GND
(Metal Base)
PLASTIC LID
SIDE SECTION
0.069 MAX.
0.010
0.230
0.246
0.282
1
2
3
546
7
9
8
10
12
11
0.041
1
2
3
0.015
0.200 SQ.
TOP VIEWTOP VIEW
BOTTOM VIEW
54
6
7
9
8
10 12
11
0.030
RAY
RMBA
09501A
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