Features
• Single 3-V Supply Voltage
• High Power-added Efficient Power Amplifier (P
• Ramp-controlled Output Power
• Current-saving Standby Mode
• Few External Components
• HP-VFQFP-N16 Package
Electrostatic sensiti ve device.
Observe precautions for handling.
Description
Typically 23 dBm)
out
ISM/Bluetooth™
2.4-GHz Power
Amplifier
The T7023 is a monolithic SiGe power amplifier. It is especially designed for operation
in TDMA systems like Bluetooth, DECT , and many other ISM applications according to
FCC part 15.
Due to the ramp-control feature and a very low quiescent current, an exter nal switch
transistor for V
is not required.
S
Figure 1. Block Diagram
GND
PA_IN
GND
A
P
_
1
V
D
N
G
A
P
_
2
V
A
P
_
2
V
GND
Ramp
GND
SiGe PA
GND
T7023
GND
T7023
Preliminary
D
N
G
T
U
O
_
A
P
_
3
V
T
U
O
_
A
P
_
3
V
T
U
O
_
A
P
_
3
V
Rev. 4532A–BLURF–09/02
1
Pin Configuration
Figure 2. Pinning HP-VFQFP-N16
T
T
T
U
U
U
O
O
O
_
_
_
A
A
A
P
P
P
D
_
_
N
3
3
V
V
G
GND
4
GND
3
PA_IN
2
GND
1
A
A
D
P
P
N
_
_
G
1
2
V
V
GND
GND
Ramp
GND
_
3
V
8 7 6 5
9
10
11
12
13 14 15 16
A
P
_
2
V
Pin Description
Pin Symbol Function
1 GND Ground
2 PA_IN Power amplifier input
3 GND Ground
4 GND Ground
5 GND Ground
6 V3_PA _OUT Inductor to power supply and matching network for power amplifier output
7 V3_PA _OUT Inductor to power supply and matching network for power amplifier output
8 V3_PA _OUT Inductor to power supply and matching network for power amplifier output
9 GND Ground
10 GND Ground
11 RAMP Power ramping control input
12 GND Ground
13 V2_PA Inductor to power supply for power amplifier
14 V2_PA Inductor to power supply for power amplifier
15 GND Ground
16 V1_PA Supply voltage for power amplifier
Slug GND Ground
2
T7023
4532A–BLURF–09/02
Absolute Maximum Ratings
All voltages are referred to ground (Pins GND and slug), no RF
Parameters Symbol Value Unit
Supply voltage
Pins V1_PA, V2_PA and V3_PA_OUT
Junction temperature T
Storage temperature T
RF input power PA P
V
S
j
stg
inPA
6V
150 °C
-40 to +125 °C
10 dBm dBm
Thermal Resistance
Parameters Symbol Value Unit
Junction ambient HP-VFQFP-N16 R
thJA
TBD K/W
T7023
Operating Range
All voltages are referred to ground (Pins GND and slug). Power supply points are V1_PA, V2_PA, V3_PA_OUT.
The following table represents the sum of all supply currents depending on the TX mode.
Parameters Symbol Min. Typ. Max. Unit
Supply voltage Pins V1_PA, V2_PA and
V3_PA_OUT
Supply current I
Standby current I
Ambient temperature T
S_standby
V
amb
S
S
2.7 3.0 4.6 V
165 mA
10 µA
-25 +25 +70 °C
4532A–BLURF–09/02
3
Electrical Characteristics
Test conditions (unless otherwise specified): VS = 3.0 V, T
amb
= 25°C
Parameters Test Condit ions Symbol Min. Typ. Max. Unit
Power Amplifier
Supply voltage Pins V1_PA, V2_PA and
Supply current TX I
(1)
V3_PA_OUT
RX (PA off), V
³ 0.1 V I
RAMP
Standby I
V
S
S_TX
S_RX
S_standby
2.7 3.0 4.6 V
165 mA
10 µA
10 µA
Frequency range TX f 2.4 2.5 GHz
Gain-control range TX DGp 60 42 dB
Power gain maximum TX
Pin PA_IN to V3_PA_ OUT
Power gain minimum TX
Pin PA_IN to V3_PA_ OUT
Ramping voltage maximum TX, power gain (maximum)
Pin RAMP
Ramping voltage minimum TX, power gain (minimum)
Pin RAMP
Gp 28 30 33 dB
Gp -40 -17 dB
V
RAMP max
V
RAMP min
1.7 1.75 1.83 V
0.1 V
Ramping current maximum V = 1.75 V 0.5 mA
Power-added efficiency TX PAE 35 42 %
Saturated output power TX, input power = 0 dBm
referred to Pins V3_PA_OUT
Input matching
Output matching
Harmonics
= 23 dBm
at P
sat
Harmonics
at P
= 23 dBm
sat
(2)
(2)
TX, Pin PA_IN Load VSWR <1.5:1
TX, Pin V3_PA_OUT Load VSWR <1.5:1
TX, Pin V3_PA_OUT
TX, Pin V3_PA_OUT
P
2 f
3 f
sat
o
o
22.5 23 23.5 dBm
-30 dBc
-30 dBc
Notes: 1. Power amplifier shall be unconditionally stable, maximum duty cycle 100%, true CW operation, maximum load mismatch
and duration: VSWR 10:1 (all phases) 10 s, Z
= 50 W.
G
2. With external matching network, load impedance 50 W
4
T7023
4532A–BLURF–09/02