3.3V/5V or Adjustable-Output,
Step-Up DC-DC Converters
_______________General Description
The MAX856–MAX859 are high-efficiency, CMOS, stepup, DC-DC switching regulators for small, low input voltage or battery-powered systems. The MAX856/MAX858
accept a positive input voltage between 0.8V and V
OUT
and convert it to a higher, pin-selectable output voltage of
3.3V or 5V. The MAX857/MAX859 adjustable versions
accept 0.8V to 6.0V input voltages and generate higher
adjustable output voltages in the 2.7V to 6.0V range.
Typical efficiencies are greater than 85%. Typical quiescent supply current is 25µA (1µA in shutdown).
The MAX856–MAX859 combine ultra-low quiescent supply
current and high efficiency to give maximum battery life. An
internal MOSFET power transistor permits high switching
frequencies. This benefit, combined with internally set peak
inductor current limits, permits the use of small, low-cost
inductors. The MAX856/MAX857 have a 500mA peak
inductor current limit. The MAX858/MAX859 have a 125mA
peak inductor current limit.
________________________Applications
3.3V to 5V Step-Up Conversion
Palmtop Computers
Portable Data-Collection Equipment
Personal Data Communicators/Computers
Medical Instrumentation
2-Cell & 3-Cell Battery-Operated Equipment
Glucose Meters
__________Typical Operating Circuit
____________________________Features
♦ 0.8V to 6.0V Input Supply Voltage
♦ 0.8V Typ Start-Up Supply Voltage
♦ 85% Efficiency at 100mA
♦ 25µA Quiescent Current
♦ 1µA Shutdown Mode
♦ 125mA and 500mA Switch-Current Limits Permit
Use of Low-Cost Inductors
♦ Up to 500kHz Switching Frequency
♦ ±1.5% Reference Tolerance Over Temperature
♦ Low-Battery Detector (LBI/LBO)
♦ 8-Pin SO and µMAX Packages
______________Ordering Information
PARTTEMP. RANGEPIN-PACKAGE
MAX856CSA
MAX856CUA0°C to +70°C8 µMAX
MAX856C/D0°C to +70°CDice*
MAX856ESA-40°C to +85°C8 SO
MAX856MJA-55°C to +125°C8 CERDIP
MAX857CSA
MAX857CUA0°C to +70°C8 µMAX
MAX857C/D
MAX857ESA-40°C to +85°C8 SO
MAX857MJA-55°C to +125°C8 CERDIP
Ordering Information continued at end of data sheet.
Note 1: Reverse battery current is measured from the
connected backwards. A reverse current of 750mA will not exceed the SO or CERDIP package dissipation limits but, if left
for an extended time (more than ten minutes), may degrade performance.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Shutdown Input. When low, the entire circuit is off and V
forward voltage drop of the external Schottky rectifier.
Selects the output voltage; connect to GND for 5V output, and to OUT for 3.3V
output.
Feedback Input for adjustable-output operation. Connect to an external resistor voltage
divider between OUT and GND.
1.25V Reference Voltage Output. Bypass with 0.22µF to GND (0.1µF if there is no external
reference load). Maximum load capability is 250µA source, 20µA sink.
Low-Battery Output. An open-drain N-channel MOSFET sinks current when the voltage at
LBI drops below 1.25V.
Low-Battery Input. When the voltage on LBI drops below 1.25V, LBO sinks current.
If not used, connect to VIN.
Connect OUT to the regulator output. OUT provides bootstrap power to the IC.66
Power Ground. Must be low impedance; solder directly to ground plane.77
N-Channel Power-MOSFET Drain88
_______________Detailed Description
The MAX856–MAX859 combine a switch-mode regulator, N-channel power MOSFET, precision voltage reference, and power-fail detector in a single monolithic
device. The MOSFET is a “sense-FET” type for best
efficiency, and has a very low gate threshold voltage to
ensure start-up with low battery voltages (0.8V typ).
A unique minimum-off-time, current-limited pulse-frequency modulation (PFM) control scheme is a key feature of the MAX856 series (Figure 1). This scheme
combines the high output power and efficiency of a
pulse-width modulation (PWM) device with the ultra-low
quiescent current of a traditional PFM pulse-skipper.
There is no oscillator; at heavy loads, switching is
accomplished through a constant-peak-current limit in
the switch, which allows the inductor current to vary
between this peak limit and some lesser value. At light
loads, switching frequency is governed by a pair of
one-shots, which set a minimum off-time (1µs) and a
maximum on-time (4µs). The switching frequency
depends upon the load and the input voltage, and can
range up to 500kHz.
Operating Principle
PFM Control Scheme
FUNCTION
= VIN- VD,where VDis the
OUT
The peak switch current of the internal MOSFET power
switch is fixed at 500mA ±100mA (MAX856/MAX857)
or 125mA ±25mA (MAX858/MAX859). The switch’s onresistance is typically 1Ω (MAX856/MAX857) or 4Ω
(MAX858/MAX859), resulting in a switch voltage drop
(VSW) of about 500mV under high output loads. The
value of VSWwill decrease with light current loads.
Conventional PWM converters generate constant-frequency switching noise, whereas the unique architecture of the MAX856–MAX859 produces variable-frequency switching noise. However, unlike conventional
pulse-skippers (where noise amplitude varies with input
voltage), noise in the MAX856 series does not exceed
the switch current limit times the filter-capacitor equivalent series resistance (ESR).
Voltage Reference
The precision voltage reference is suitable for driving
external loads, such as an analog-to-digital converter.
The voltage-reference output changes less than ±2%
when sourcing up to 250µA and sinking up to 20µA. If
the reference drives an external load, bypass it with
0.22µF to GND. If the reference is unloaded, bypass it
with at least 0.1µF.
3.3V/5V or Adjustable-Output,
Step-Up DC-DC Converters
The 3/5 input is internally diode clamped to GND and
Logic Inputs and Outputs
OUT, and should not be connected to signals outside
this range. The SHDN input and LBO output (opendrain) are not clamped to V+ and can be pulled as high
as 7V regardless of the voltage at OUT. Do not leave
control inputs (3/5, LBI, or SHDN) floating.
__________________Design Procedure
For the MAX856/MAX858,you can select a 3.3V or 5V
output voltage under logic control, or by tying 3/–5to
GND or OUT. Efficiency is typically better than 80%
over a 2mA to 100mA (MAX856/MAX857) load range.
The device is internally bootstrapped, with power
derived from the output voltage (via OUT). When the
MAX856–MAX859
output is in 5V mode, the higher internal supply voltage
results in lower switch-transistor on-resistance, slightly
greater output power, and higher efficiency.
Bootstrapping allows the battery voltage to sag to 0.8V
once the system is started. Therefore, the battery voltage ranges from (V
forward drop of the Schottky rectifier). If the battery voltage exceeds the programmed output voltage, the out-
R3
5
R4
1
3
0.1µF
C3
Output Voltage Selection
+ VD) to 0.8V (where VDis the
OUT
V
IN
LBI
MAX856/MAX858
SHDN
REF
GND
7
C1*
OUT
LBO
47µH
L1
D1
1N5817
8
LX
R1
6
2
OUTPUT
3/5
SELECT
4
C2*
put will follow the battery voltage. This is acceptable in
many systems; however, the input or output voltage
must not be forced above 7V.
The MAX857/MAX859’s output voltage is set by two
resistors, R1 and R2 (Figure 2b), which form a voltage
divider between the output and FB. Use the following
equation to determine the output voltage:
V
OUT
= V
( _________ )
REF
R1 + R2
R2
where V
REF
= 1.25V.
To simplify resistor selection:
V
V
OUT
REF
R1 = R2 ( _______ - 1)
Since the input bias current at FB has a maximum value
of 100nA, large values (10kΩ to 300kΩ) can be used
for R1 and R2 with no significant accuracy loss. For 1%
error, the current through R1 should be at least 100
times FB’s bias current.
V
IN
C1*
R3
V
OUT
R4
C3
0.1µF
5
LBI
MAX857/MAX859
1
SHDN
3
REF
GND
7
OUT
LBO
47µH
L1
D1
1N5817
8
LX
R1
6
2
FB
4
R2
C2*
V
OUT
*C1 = C2 = 68µF FOR MAX856
C1 = C2 = 22µF FOR MAX858
Figure 2a. Standard Application Circuit—Preset Output
Voltage
Figure 2b. Standard Application Circuit—Adjustable Output
Voltage
3.3V/5V or Adjustable-Output,
Step-Up DC-DC Converters
The MAX856 series contains an on-chip comparator for
low-battery detection. If the voltage at LBI falls below
the regulator’s internal reference voltage (1.25V), LBO
(an open-drain output) sinks current to GND. The lowbattery monitor’s threshold is set by two resistors, R3
and R4 (Figure 2). Set the threshold voltage using the
following equation:
V
R3 = R4 ( ______ - 1)
where V
detector and V
Since the LBI current is less than 100nA, large resistor
values (typically 10kΩ to 300kΩ) can be used for R3
and R4 to minimize loading of the input supply.
When the voltage at LBI is below the internal threshold,
LBO sinks current to GND. Connect a pull-up resistor of
10kΩ or more from LBO to OUT when driving CMOS
circuits. When LBI is above the threshold, the LBO output is off. If the low-battery comparator is not used,
connect LBI to VINand leave LBO open.
is the desired threshold of the low-battery
LBI
LBI
V
REF
is the internal 1.25V reference.
REF
Inductor Selection
An inductor value of 47µH performs well in most
MAX856–MAX859 applications. However, the inductance
value is not critical, and the MAX856–MAX859 will work
with inductors in the 10µH to 100µH range. Smaller
inductance values typically offer a smaller physical size
for a given series resistance, allowing the smallest
overall circuit dimensions. However, due to higher peak
Low-Battery Detection
inductor currents, the output voltage ripple (I
output filter capacitor ESR) also tends to be higher.
Circuits using larger inductance values exhibit higher
output current capability and larger physical dimensions for a given series resistance.
The inductor’s incremental saturation current rating
should be greater than the peak switch-current limit,
which is 500mA for the MAX856/MAX857, and 125mA
for the MAX858/MAX859. However, it is generally
acceptable to bias the inductor into saturation by as
much as 20%, although this will slightly reduce
efficiency.
The inductor’s DC resistance significantly affects efficiency. See the Efficiency vs. Load Current for Various
Inductors graph in the
See Tables 1 and 2 for a list of suggested inductor
suppliers.
Typical Operating Characteristics
PEAK
A 68µF, 10V, 0.85Ω, surface-mount tantalum (SMT)
output filter capacitor typically provides 50mV output
ripple when stepping up from 2V to 5V at 100mA
(MAX856/ MAX857). Smaller capacitors (down to 10µF
with higher ESRs) are acceptable for light loads or in
applications that can tolerate higher output ripple.
Values in the 10µF to 47µF range are recommended for
the MAX858/MAX859.
The equivalent series resistance (ESR) of both bypass
and filter capacitors affects efficiency and output ripple. The output voltage ripple is the product of the peak
inductor current and the output capacitor’s ESR. Use
low-ESR capacitors for best performance, or connect
two or more filter capacitors in parallel. Low-ESR, SMT
tantalum capacitors are currently available from
Sprague (595D series) and AVX (TPS series). Sanyo
OS-CON organic-semiconductor through-hole capacitors also exhibit very low ESR, and are especially useful
for operation at cold temperatures. See Table 1 for a list
of suggested capacitor suppliers.
Rectifier Diode
Capacitor Selection
For optimum performance, a switching Schottky diode
(such as the 1N5817) is recommended. Refer to Table
1 for a list of component suppliers. For low output
power applications, a PN-junction switching diode
(such as the 1N4148) will also work well, although its
greater forward voltage drop will reduce efficiency.
PC Layout and Grounding
The MAX856 series’ high-frequency operation makes
PC layout important for minimizing ground bounce and
x
noise. Keep the IC’s GND pin and the ground leads of
C1 and C2 (Figure 1) less than 0.2in (5mm) apart. Also
keep all connections to the FB and LX pins as short as
possible. To maximize output power and efficiency and
minimize output ripple voltage, use a ground plane and
solder the IC’s GND (pin 7) directly to the ground
plane.
8 SO0°C to +70°C
8 µMAX0°C to +70°CMAX858CUA
Dice*0°C to +70°CMAX858C/D
8 SO-40°C to +85°CMAX858ESA
8 CERDIP
8 SO0°C to +70°C
8 µMAX0°C to +70°CMAX859CUA
Dice*0°C to +70°CMAX859C/D
8 SO-40°C to +85°CMAX859ESA
8 CERDIP
†
†
RESISTANCE
(W)
RATED CURRENT
(A)
___________________Chip Topography
SHDN
3/5 OR FB*
REF
LBO
LX
GND
OUT
LBI
HEIGHT
(mm)
MAX856–MAX859
0.084"
(2.1336mm)
0.058"
(1.4732mm)
*3/5 FOR MAX856/MAX858; FB FOR MAX857/MAX859.
TRANSISTOR COUNT: 357;
SUBSTRATE CONNECTED TO OUT.