The MAX756/MAX757 are CMOS step-up DC-DC switching regulators for small, low input voltage or battery-powered systems. The MAX756 accepts a positive input
voltage down to 0.7V and converts it to a higher pinselectable output voltage of 3.3V or 5V. The MAX757 is
an adjustable version that accepts an input voltage down
to 0.7V and generates a higher adjustable output voltage
in the range from 2.7V to 5.5V. Typical full-load efficiencies
for the MAX756/MAX757 are greater than 87%.
The MAX756/MAX757 provide three improvements over
previous devices. Physical size is reduced—the high
switching frequencies (up to 0.5MHz) made possible by
MOSFET power transistors allow for tiny (<5mm diameter)
surface-mount magnetics. Efficiency is improved to 87%
(10% better than with low-voltage regulators fabricated in
bipolar technology). Supply current is reduced to 60µA
by CMOS construction and a unique constant-off-time
pulse-frequency modulation control scheme.
________________________Applications
3.3V to 5V Step-Up Conversion
Palmtop Computers
Portable Data-Collection Equipment
Personal Data Communicators/Computers
Medical Instrumentation
2-Cell & 3-Cell Battery-Operated Equipment
Glucose Meters
____________________________Features
♦ Operates Down to 0.7V Input Supply Voltage
♦ 87% Efficiency at 200mA
♦ 60µA Quiescent Current
♦ 20µA Shutdown Mode with Active Reference and
LBI Detector
♦ 500kHz Maximum Switching Frequency
♦ ±1.5% Reference Tolerance Over Temperature
♦ Low-Battery Detector (LBI/LBO)
♦ 8-Pin DIP and SO Packages
______________Ordering Information
PARTTEMP. RANGEPIN-PACKAGE
MAX756CPA
MAX756CSA0°C to +70°C8 SO
MAX756C/D0°C to +70°CDice*
MAX756EPA-40°C to +85°C8 Plastic DIP
MAX756ESA-40°C to +85°C8 SO
MAX757CPA
MAX757CSA0°C to +70°C8 SO
MAX757C/D0°C to +70°CDice*
MAX757EPA-40°C to +85°C8 Plastic DIP
MAX757ESA-40°C to +85°C8 SO
SO (derate 5.88mW/°C above +70°C)..........................471mW
Stresses beyond those listed under “Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Operating Temperature Ranges:
MAX75_C_ _ ........................................................0°C to +70°C
MAX75_E_ _......................................................-40°C to +85°C
1.25V Reference Voltage Output. Bypass with 0.22µF to GND (0.1µF if there is no external
reference load). Maximum load capability is 250µA source, 20µA sink.
Low-Battery Output. An open-drain N-channel MOSFET sinks current when the voltage at
LBI drops below +1.25V.
Low-Battery Input. When the voltage on LBI drops below +1.25V, LBO sinks current.
Connect to VINif not used.
Connect OUT to the regulator output. It provides bootstrapped power to both devices,
and also senses the output voltage for the MAX756.
The MAX756/MAX757 combine a switch-mode regulator
with an N-channel MOSFET, precision voltage reference,
and power-fail detector in a single monolithic device.
The MOSFET is a “sense-FET” type for best efficiency,
and has a very low gate threshold voltage to ensure
start-up under low-battery voltage conditions (1.1V typ).
Pulse-Frequency
Modulation Control Scheme
A unique minimum off time, current-limited, pulse-frequency modulation (PFM) control scheme is a key feature of
the MAX756/MAX757. This PFM scheme combines the
advantages of pulse-width modulation (PWM) (high output
power and efficiency) with those of a traditional PFM
pulse-skipper (ultra-low quiescent currents). There is no
oscillator; at heavy loads, switching is accomplished
through a constant peak-current limit in the switch, which
allows the inductor current to self-oscillate between this
peak limit and some lesser value. At light loads, switching
frequency is governed by a pair of one-shots, which set a
minimum off-time (1µs) and a maximum on-time (4µs).
The switching frequency depends on the load and the
input voltage, and can range as high as 500kHz.
The peak switch current of the internal MOSFET power
switch is fixed at 1A ±0.2A. The switch's on resistance
is typically 0.5Ω, resulting in a switch voltage drop
(VSW) of about 500mV under high output loads. The
value of VSWdecreases with light current loads.
Conventional PWM converters generate constant-frequency switching noise, whereas this architecture produces variable-frequency switching noise. However,
the noise does not exceed the switch current limit times
the filter-capacitor equivalent series resistance (ESR),
unlike conventional pulse-skippers.
Voltage Reference
The precision voltage reference is suitable for driving
external loads such as an analog-to-digital converter.
It has guaranteed 250µA source-current and 20µA
sink-current capability. The reference is kept alive
even in shutdown mode. If the reference drives an
external load, bypass it with 0.22µF to GND. If the reference is unloaded, bypass it with at least 0.1µF.
Control-Logic Inputs
The control inputs (3/5, SHDN) are high-impedance
MOS gates protected against ESD damage by normally
reverse-biased clamp diodes. If these inputs are driven from signal sources that exceed the main supply
voltage, the diode current should be limited by a series
resistor (1MΩ suggested). The logic input threshold
level is the same (approximately 1V) in both 3.3V and
5V modes. Do not leave the control inputs floating.
__________________Design Procedure
Output Voltage Selection
The MAX756 output voltage can be selected to 3.3V or
5V under logic control, or it can be left in one mode or
the other by tying 3/5 to GND or OUT. Efficiency varies
depending upon the battery and the load, and is typically better than 80% over a 2mA to 200mA load range.
The device is internally bootstrapped, with power
derived from the output voltage (via OUT). When the
output is set at 5V instead of 3.3V, the higher internal
supply voltage results in lower switch-transistor on
resistance and slightly greater output power.
Bootstrapping allows the battery voltage to sag to less
than 1V once the system is started. Therefore, the battery voltage range is from V
(where VDis the forward drop of the Schottky rectifier).
If the battery voltage exceeds the programmed output
voltage, the output will follow the battery voltage. In
many systems this is acceptable; however, the output
voltage must not be forced above 7V.
The output voltage of the MAX757 is set by two resistors, R1 and R2 (Figure 1), which form a voltage divider
between the output and the FB pin. The output voltage
is set by the equation:
V
= (V
OUT
where V
To simplify resistor selection:
Since the input bias current at FB has a maximum
value of 100nA, large values (10kΩ to 200kΩ) can be
used for R1 and R2 with no significant loss of accuracy.
For 1% error, the current through R1 should be at least
100 times FB’s bias current.
The MAX756/MAX757 contain on-chip circuitry for lowbattery detection. If the voltage at LBI falls below the regulator’s internal reference voltage (1.25V), LBO (an opendrain output) sinks current to GND. The low-battery monitor's threshold is set by two resistors, R3 and R4 (Figure
1), which forms a voltage divider between the input voltage and the LBI pin. The threshold voltage is set by R3
and R4 using the following equation:
where VINis the desired threshold of the low-battery
detector, R3 and R4 are the input divider resistors at
LBI, and V
is the internal 1.25V reference.
REF
Since the LBI current is less than 100nA, large resistor
values (typically 10kΩ to 200kΩ) can be used for R3
and R4 to minimize loading of the input supply.
When the voltage at LBI is below the internal threshold,
LBO sinks current to GND. A pull-up resistor of 10kΩ
or more connected from LBO to V
when driving CMOS circuits. Any pull-up resistor con-
can be used
OUT
nected to LBO should not be returned to a voltage
source greater than V
threshold, the LBO output is off. The low-battery com-
. When LBI is above the
OUT
parator and reference voltage remain active when the
MAX756/MAX757 is in shutdown mode.
If the low-battery comparator is not used, connect LBI
to VINand leave LBO open.
Inductor Selection
The inductors should have a saturation (incremental)
current rating equal to or greater than the peak switchcurrent limit, which is 1.2A worst-case. However, it’s
generally acceptable to bias the inductor into saturation by 20%, although this will reduce the efficiency.
The 22µH inductor shown in the typical applications circuit is sufficient for most MAX756/MAX757 application
circuits. Higher input voltages increase the energy
transferred with each cycle, due to the reduced
input/output differential. Minimize excess ripple due to
increased energy transfer by reducing the inductor
value (10µH suggested).
V
OUT
C2
100µF
The inductor’s DC resistance significantly affects efficiency. For highest efficiency, limit L1’s DC resistance
to 0.03Ω or less. See Table 1 for a list of suggested
inductor suppliers.
United
Chemi-ConUSA: (708) 696-2000, FAX (708) 640-6311
A 100µF, 10V surface-mount (SMT) tantalum capacitor
typically provides 50mV output ripple when stepping
up from 2V to 5V at 200mA. Smaller capacitors, down
to 10µF, are acceptable for light loads or in applications that can tolerate higher output ripple.
The ESR of both bypass and filter capacitors affects
efficiency. Best performance is obtained by using specialized low-ESR capacitors, or connecting two or more
filter capacitors in parallel. The smallest low-ESR SMT
tantalum capacitors currently available are Sprague
595D series, which are about half the size of competing
products. Sanyo OS-CON organic semiconductor
through-hole capacitors also exhibit very low ESR, and
are especially useful for operation at cold temperatures. Table 1 lists suggested capacitor suppliers.
MINIMUM
SHDN
OFF-TIME
ONE-SHOT
3/5
MAXIMUM
ON-TIME
ONE-SHOT
TRIGQ
ONE-SHOT
ONE-SHOT
F/F
S
R
Rectifier Diode
For optimum performance, a switching Schottky diode,
such as the 1N5817, is recommended. 1N5817 equivalent diodes are also available in surface-mount packages from Collmer Semiconductor in Dallas, TX, phone
(214) 233-1589. The part numbers are SE014 or
SE024. For low output power applications, a pn junction switching diode, such as the 1N4148, will also
work well, although efficiency will suffer due to the
greater forward voltage drop of the pn junction diode.
The MAX756/MAX757 high peak currents and high-frequency operation make PC layout important for mini-
___________________Chip Topography
SHDN
LX
mizing ground bounce and noise. The distance
between the MAX756/MAX757’s GND pin and the
ground leads of C1 and C2 in Figure 1 must be kept to
less than 0.2" (5mm). All connections to the FB and LX
pins should also be kept as short as possible. To
3/5 (MAX756)
FB (MAX757)
obtain maximum output power and efficiency and minimum output ripple voltage, use a ground plane and
GND
solder the MAX756/MAX757 GND (pin 7) directly to the
ground plane.
GND
OUT
LBI
MAX756/MAX757
REF
LBO
0.080"
(2.03mm)
TRANSISTOR COUNT: 758
SUBSTRATE CONNECTED TO OUT
________________________________________________________Package Information