MAX649/MAX651/MAX652
5V/3.3V/3V or Adjustable, High-Efficiency,
Low IQ, Step-Down DC-DC Controllers
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Standard wire-wound and metal-film resistors have an 
inductance high enough to degrade performance. 
Surface-mount (chip) resistors have very little inductance and are well suited for use as current-sense 
resistors. A wire resistor made by IRC works well in 
through-hole applications. Because this resistor is a 
band of metal shaped as a “U”, its inductance is less 
than 10nH (an order of magnitude less than metal film 
resistors). Resistance values between 5mΩ and 0.1Ω 
are available (see Table 1). 
Inductor Selection
Practical inductor values range from 10µH to 50µH or more. 
The circuit operates in discontinuous-conduction mode if:
V
OUT
x (R + 1) V
D
V + ≤ ———————— + —— + V
SW
RR
R, the switch on-time/off-time ratio, equals 6.7. VDis the 
diode’s drop, and VSWis the voltage drop across the 
P-channel FET. To get the full output capability in 
discontinuous-conduction mode, choose an inductor 
value no larger than:
R
SENSE
x 12µs x (V+ - VSW- V
OUT
)
L(max) = —————————————————
V
CS
where VCSis the current-sense voltage. 
In both the continuous and discontinuous modes, the
lower limit of the inductor is more important. With a 
small inductor value, the current rises faster and overshoots the desired peak current limit because the current-limit comparator cannot respond fast enough. This 
reduces efficiency slightly and, more importantly, could 
cause the current rating of the external components 
to be exceeded. Calculate the minimum inductor value 
as follows:
(V+(max) - VSW- V
OUT
) x 0.3µs
L(min) = ————————————––——
∆I x I
LIM
(min)
where ∆I is the percentage of inductor-current over- 
shoot, where I
LIM 
= VCS/R
SENSE 
and 0.3µs is the time 
it takes the comparator to switch. An overshoot of 10% 
is usually not a problem. Inductance values above the 
minimum work well if the maximum value defined above 
is not exceeded. Smaller inductance values cause 
higher output ripple because of overshoot. Larger values tend to produce physically larger coils.
For highest efficiency, use a coil with low DC resistance; a value smaller than 0.1V/I
LIM
works best. To 
minimize radiated noise, use a toroid, pot core, or 
shielded-bobbin inductor. Inductors with a ferrite core 
or equivalent are recommended. Make sure the induc-
tor’s saturation-current rating is greater than I
LIM
(max). 
However, it is generally acceptable to bias the inductor 
into saturation by about 20% (the point where the 
inductance is 20% below its nominal value). 
The peak current of Figure 1 is 2.35A for a 1.5A output. 
The inductor used in this circuit is specified to drop by 
10% at 2.2A (worst case); a curve provided by the 
manufacturer shows that the inductance typically drops 
by 20% at 3.1A. Using a slightly underrated inductor 
can sometimes reduce size and cost, with only a minor 
impact on efficiency. The MAX649/MAX651/MAX652 
current limit prevents any damage from an underrated 
inductor’s low inductance at high currents.
Table 1 lists inductor types and suppliers for various 
applications. The efficiencies of the listed surfacemount inductors are nearly equivalent to those of the 
larger size through-hole versions.
Diode Selection
The MAX649/MAX651/MAX652’s high switching frequency demands a high-speed rectifier (commonly 
called a catch diode when used in switching-regulator 
circuits). Schottky diodes, such as the 1N5817 through 
1N5822 families (and their surface-mount equivalents), 
are recommended. Choose a diode with an average 
current rating equal to or greater than I
LIM
(max) and a 
voltage rating higher than V+(max). For high-temperature applications, where Schottky diodes can be 
inadequate because of high leakage currents, use 
high-speed silicon diodes instead. At heavy loads and 
high temperatures, the disadvantages of a Schottky 
diode’s high leakage current may outweigh the benefits 
of its low forward voltage. Table 1 lists diode types and 
suppliers for various applications.
External Switching Transistor
The MAX649/MAX651/MAX652 drive P-channel 
enhancement-mode MOSFET transistors only. The 
choice of power transistor is primarily dictated by the 
input voltage and the peak current. The transistor's 
on-resistance, gate-source threshold, and gate 
capacitance must also be appropriately chosen. The 
drain-to-source and gate-to-source breakdown voltage 
ratings must be greater than V+. The total gate-charge 
specification is normally not critical, but values should 
be less than 100nC for best efficiency. The MOSFET 
should be capable of handling the peak current and, 
for maximum efficiency, have a very low on-resistance 
at that current. Also, the on-resistance must be low for 
the minimum available VGS, which equals V+(min). 
Select a transistor with an on-resistance between 50% 
and 100% of the current-sense resistor. The Si9430 
transistor chosen for the 
Typical Operating Circuit 
has