Rainbow Electronics MAX5074 User Manual

General Description
The MAX5074 isolated PWM power IC features integrated switching power MOSFETs connected in a voltage­clamped, two-transistor, power-circuit configuration. This device can be used in both forward and flyback configu­rations with a wide input voltage range from 11V to 76V and up to 15W of output power.
A wide array of protection features includes UVLO, overtemperature shutdown, and short-circuit protection with hiccup current limit for enhanced performance and reliability. Operation up to 500kHz allows smaller exter­nal magnetics and capacitors.
The MAX5074 is rated for operation over the -40°C to +125°C temperature range and is available in a 20-pin TSSOP package.
Warning: The MAX5074 is designed to work with high voltages. Exercise caution.
Applications
IEEE 802.3af PD Power Supplies
Isolated IP Phone Power Supplies
High-Efficiency Telecom/Datacom Power Supplies
48V Input, Isolated Power-Supply Modules
WLAN Access-Point Power Supplies
ADSL Line Cards
ADSL Line-Driver Power Supplies
Distributed Power Systems with 48V Bus
Features
Clamped, Two-Switch Power IC for High Efficiency
No Reset Winding Required
Up to 15W Output Power
Bias Voltage Regulator with Automatic High-
Voltage Supply Turn-Off
11V to 76V Wide Input Voltage RangeIntegrated High-Voltage 0.4Power MOSFETs
Feed-Forward Voltage-Mode Control For Fast
Input Transient Rejection
Programmable Brownout Undervoltage Lockout
Internal Overtemperature Shutdown
Indefinite Short-Circuit Protection With
Programmable Fault Integration
Integrated Look-Ahead Signal for Secondary-Side
Synchronous Rectification
>90% Efficiency with Synchronous Rectification
Up to 500kHz Switching Frequency
High-Power (1.74W), Small-Footprint 20-Pin
Thermally Enhanced TSSOP Package
MAX5074
Power IC with Integrated MOSFETs for Isolated IEEE
802.3af PD and Telecom Power-Supply Applications
________________________________________________________________ Maxim Integrated Products 1
Pin Configuration
Ordering Information
MAX5074
DRNH
SRC
DRVL
DRVH
QH
QL
D2
D1
D3
T1
V
IN
C
IN
C
OUT
V
OUT
XFRMRH
XFRMRL
Simplified Application Circuit
19-3312; Rev 0; 7/04
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
*EP = Exposed pad.
EVALUATION KIT AVAILABLE
20
INBIAS
19
HVIN
18
UVLO
17
BSTRCFF
MAX5074
TSSOP
DRNH
16
XFRMRH
15
14
DRVIN
XFRMRLPPWM
13
12
SRC
11
PGNDCS
TOP VIEW
1
REGOUT
2
RTCT
3
FLTINT
4
RAMP
5
OPTO
6
CSS
7
8
9
GND
10
PART TEMP RANGE PIN-PACKAGE
MAX5074AUP -40°C to +125°C 20-TSSOP-EP*
MAX5074
Power IC with Integrated MOSFETs for Isolated IEEE
802.3af PD and Telecom Power-Supply Applications
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
HVIN
= 12V, C
INBIAS
= 1µF, C
REGOUT
= 2.2µF, R
RTCT
= 25k, C
RTCT
= 100pF, C
BST
= 0.22µF, V
CSS
= VCS= 0V, V
RAMP
= V
UVLO
= 3V,
T
A
= TJ= -40°C to +125°C, unless otherwise noted. Typical values are at TA= +25°C, unless otherwise noted.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
HVIN, INBIAS, DRNH, XFRMRH,
XFRMRL to GND.................................................-0.3V to +80V
BST to GND ............................................................-0.3V to +95V
BST to XFRMRH .....................................................-0.3V to +12V
PGND to GND .......................................................-0.3V to +0.3V
UVLO, RAMP, CSS, OPTO, FLTINT, RCFF,
RTCT to GND......................................................-0.3V to +12V
SRC, CS to GND.......................................................-0.3V to +6V
REGOUT, DRVIN to GND .......................................-0.3V to +12V
REGOUT to HVIN ...................................................-80V to +0.3V
REGOUT to INBIAS ................................................-80V to +0.3V
REGOUT Current ................................................................50mA
PPWM to GND....................................-0.3V to (REGOUT + 0.3V)
PPWM Current .................................................................±20mA
DRNH, XFRMRH, XRFMRL, SRC Continuous Current (Average)
T
J
= +125°C......................................................................0.9A
T
J
= +150°C......................................................................0.6A
Continuous Power Dissipation (T
A
= +70°C)
20-Pin TSSOP-EP (derate 21.7mW/°C above +70°C) ....1.739W
20-Pin TSSOP-EP (θ
JA
) ................................................46°C/W
Operating Temperature Range .........................-40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Input Supply Range V
OSCILLATOR (RTCT)
PWM Frequency f
Maximum PWM Duty Cycle D
Maximum RTCT Frequency f
RTCT Peak Trip Level V
RTCT Valley Trip Level
RTCT Input Bias Current ±1 µA
RTCT Discharge MOSFET R
DS(ON)
RTCT Discharge Pulse Width 50 ns
LOOK-AHEAD LOGIC (PPWM)
PPWM to XFRMRL Output Propagation Delay
PPWM Output High V
PPWM Output Low V
PWM COMPARATOR (OPTO, RAMP, RCFF)
Common-Mode Range V
Input Offset Voltage 10 mV
Input Bias Current -2 +2 µA
RAMP to XFRMRL Propagation Delay
Minimum OPTO Voltage V
Minimum RCFF Voltage RCFF sinking 2mA 2.18 V
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
HVIN
S
MAX
RTCTMAX
TH
t
PPWM
OH
OL
CM-PWM
R
= 25k, C
RTCT
R
= 25k, C
RTCT
(Note 2) 1 MHz
Sinking 20mA 30 60
PPWM rising to XFRMRL falling 110 ns
Sourcing 2mA 7.0 11.0 V
Sinking 2mA 0.4 V
From RAMP (50mV overdrive) rising to XFRMRL rising
= 0V, OPTO sinking 2mA 1.47 V
CSS
RTCT
RTCT
= 100pF 256 kHz
= 100pF 47 %
11 76 V
0.51 x
V
REGOUT
0.04 x
V
REGOUT
0 5.5 V
100 ns
V
V
MAX5074
Power IC with Integrated MOSFETs for Isolated IEEE
802.3af PD and Telecom Power-Supply Applications
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V
HVIN
= 12V, C
INBIAS
= 1µF, C
REGOUT
= 2.2µF, R
RTCT
= 25k, C
RTCT
= 100pF, C
BST
= 0.22µF, V
CSS
= VCS= 0V, V
RAMP
= V
UVLO
= 3V,
T
A
= TJ= -40°C to +125°C, unless otherwise noted. Typical values are at TA= +25°C, unless otherwise noted.) (Note 1)
)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
REGOUT LDO (REGOUT)
REGOUT Voltage Set Point V
REGOUT Load Regulation
REGOUT Dropout Voltage
REGOUT Undervoltage Lockout Threshold
REGOUT Undervoltage Lockout Threshold Hysteresis
SOFT-START (CSS)
Soft-Start Current I
INTEGRATING FAULT PROTECTION (FLTINT)
FLTINT Source Current I
FLTINT Trip Point FLTINT rising 2.7 V
FLTINT Hysteresis 0.8 V
INTERNAL POWER MOSFETs (See Figure 1, QH and QL)
On-Resistance R
Off-State Leakage Current -5 +5 µA
Total Gate Charge Per FET 15 nC
HIGH-SIDE DRIVER
Low-to-High Delay
High-to-Low Delay
Driver Output Voltage BST to XFRMRH with high side on 8 V
LOW-SIDE DRIVER
Low-to-High Delay
High-to-Low Delay
CURRENT-LIMIT COMPARATOR (CS)
Current-Limit Threshold Voltage V
Current-Limit Input Bias Current I
REGOUT
CSS
FLTINT
DS(ON
ILIM
BILIM
INBIAS floating, V
V
= V
INBIAS
INBIAS floating, V to 30mA
V
= V
INBIAS
30mA
INBIAS floating, I
= V
V
INBIAS
= 11V to 76V 8.3 9.2
HVIN
= 11V to 76V 9.5 11.0
HVIN
= 15V, I
HVIN
= 15V, I
HVIN
HVIN
, I
REGOUT
= 30mA 1.25
REGOUT
= 30mA 1.25
REGOUT
REGOUT
= 0 to
= 0
0.25
0.25
REGOUT rising 6.6 7.4 V
REGOUT falling 0.7 V
33 µA
80 µA
V
= V
DRVIN
V
XFRMRH
Driver delay until FET V
- V
(V
BST
Driver delay until FET V
- V
(V
BST
Driver delay until FET V V
DRVIN
Driver delay until FET V V
DRVIN
= 9V,
BST
= V
= 0V, IDS = 50mA
SRC
) and is fully on
XFRMRH
) and is fully off
XFRMRH
and is fully on
and is fully off
reaches 0.9 x
GS
reaches 0.1 x
GS
reaches 0.9 x
GS
reaches 0.1 x
GS
0.4 0.8
80 ns
40 ns
80 ns
40 ns
140 156 172 mV
0 < VCS < 0.3V -2 +2 µA
V
V
V
MAX5074
Power IC with Integrated MOSFETs for Isolated IEEE
802.3af PD and Telecom Power-Supply Applications
4 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(V
HVIN
= 12V, C
INBIAS
= 1µF, C
REGOUT
= 2.2µF, R
RTCT
= 25k, C
RTCT
= 100pF, C
BST
= 0.22µF, V
CSS
= VCS= 0V, V
RAMP
= V
UVLO
= 3V,
T
A
= TJ= -40°C to +125°C, unless otherwise noted. Typical values are at TA= +25°C, unless otherwise noted.) (Note 1)
Note 1: All limits at -40°C are guaranteed by design and not production tested. Note 2: Output switching frequency is half of oscillator frequency.
UNDERVOLTAGE LOCKOUT THRESHOLD
vs. TEMPERATURE
MAX5074 toc01
TEMPERATURE (°C)
V
UVLO
(V)
11095-25 -10 5 35 50 6520 80
1.2425
1.2450
1.2475
1.2500
1.2525
1.2550
1.2575
1.2600
1.2400
-40 125
UVLO RISING
STANDBY CURRENT vs. TEMPERATURE
MAX5074 toc02
TEMPERATURE (°C)
STANDBY CURRENT (µA)
1109565 80-10 5 20 35 50-25
35
70
105
140
175
210
245
280
315
350
0
-40 125
I
HVIN
V
UVLO =
0V
HVIN INPUT CURRENT
vs. TEMPERATURE
MAX5074 toc03
TEMPERATURE (°C)
I
HVIN
(mA)
11095-25 -10 5 35 50 6520 80
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.0
-40 125
V
HVIN
= 76V INBIAS FLOATING REGOUT = DRVIN
Typical Operating Characteristics
(V
HVIN
= 48V, V
INBIAS
= 15V, C
INBIAS
= 1µF, C
REGOUT
= 2.2µF, R
RTCT
= 25k, C
RTCT
= 100pF, C
BST
= 0.22µF, V
CSS
= VCS= 0V,
V
RAMP
= V
UVLO
= 3V, TA = TJ= -40°C to +125°C, unless otherwise noted. Typical values are at TA= +25°C, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Propagation Delay to XFRMRL t
BOOST VOLTAGE CIRCUIT (See Figure 1, QB)
Driver Output Delay t
One-Shot Pulse Width t
QB R
DS(ON)
THERMAL SHUTDOWN
Shutdown Temperature T
Thermal Hysteresis T
UNDERVOLTAGE LOCKOUT (UVLO)
UVLO Threshold V
UVLO Hysteresis V
UVLO Input Bias Current I
SUPPLY CURRENT
Supply Current
Standby Supply Current V
dILIM
PPWMD
PWQB
SH
HYST
UVLO
HYST
BUVLO
From CS rising (10mV overdrive) to XFRMRL rising
160 ns
200 ns
300 ns
Sinking 20mA 30 60
Temperature rising +160 °C
15 °C
V
rising 1.14 1.38 V
UVLO
140 mV
V
= 3V -100 +100 nA
UVLO
From V V
INBIAS
From V V
HVIN
From V
UVLO
= 11V to 76V, V
HVIN
= 11V
= 11V to 76V, V
INBIAS
= 76V
= 76V 7
HVIN
CSS
CSS
= 0V,
= 0V,
0.7 2
4.4 6.0
= 0V 1 mA
mA
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