Rainbow Electronics MAX5064 User Manual

General Description

The MAX5062/MAX5063/MAX5064 high-frequency,
125V half-bridge, n-channel MOSFET drivers drive high­and low-side MOSFETs in high-voltage applications.
These drivers are independently controlled and their
35ns typical propagation delay, from input to output, are
matched to within 3ns (typ). The high-voltage operation
with very low and matched propagation delay between
drivers, and high source/sink current capabilities in a
thermally enhanced package make these devices suit­able for the high-power, high-frequency telecom power
converters. The 125V maximum input voltage range pro­vides plenty of margin over the 100V input transient
requirement of telecom standards. A reliable on-chip
bootstrap diode connected between VDDand BST elimi­nates the need for an external discrete diode.

The MAX5062A/C and the MAX5063A/C offer both nonin­verting drivers (see the Selector Guide). The
MAX5062B/D and the MAX5063B/D offer a noninverting
high-side driver and an inverting low-side driver. The
MAX5064A/B offer two inputs per driver that can be
either inverting or noninverting. The MAX5062A/B/C/D
and the MAX5064A feature CMOS (V

DD

/ 2) logic inputs.
The MAX5063A/B/C/D and the MAX5064B feature TTL
logic inputs. The MAX5064A/B include a break-before­make adjustment input that sets the dead time between
drivers from 16ns to 95ns. The drivers are available in the
industry-standard 8-pin SO footprint and pin configura­tion, and a thermally enhanced 8-pin SO and 12-pin
(4mm x 4mm) thin QFN packages. All devices operate
over the -40°C to +125°C automotive temperature range.

Applications

Telecom Half-Bridge Power Supplies

Two-Switch Forward Converters

Full-Bridge Converters

Active-Clamp Forward Converters

Power-Supply Modules

Motor Control

Features

♦ HIP2100/HIP2101 Pin Compatible (MAX5062A/

MAX5063A)

♦ Up to 125V Input Operation
♦ 8V to 12.6V VDDInput Voltage Range
♦ 2A Peak Source and Sink Current Drive Capability
♦ 35ns Typical Propagation Delay
♦ Guaranteed 8ns Propagation Delay Matching

Between Drivers

♦ Programmable Break-Before-Make Timing

(MAX5064)

♦ Up to 1MHz Combined Switching Frequency while

Driving 100nC Gate Charge (MAX5064)

♦ Available in CMOS (V

DD

/ 2) or TTL Logic-Level

Inputs with Hysteresis

♦ Up to 15V Logic Inputs Independent of Input

Voltage

♦ Low 2.5pF Input Capacitance
♦ Instant Turn-Off of Drivers During Fault or PWM

Start-Stop Synchronization (MAX5064)

♦ Low 200µA Supply Current
♦ Versions Available With Combination of

Noninverting and Inverting Drivers (MAX5062B/D
and MAX5063B/D)

♦ Available in 8-Pin SO, Thermally Enhanced SO,

and 12-Pin Thin QFN Packages

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,

Half-Bridge MOSFET Drivers

________________________________________________________________ Maxim Integrated Products 1

PART TEMP RANGE

PIN-

TOP

MARK

MAX5062AASA

8 SO —

MAX5062BASA

8 SO —

MAX5062CASA

8 SO-EP* —

MAX5062DASA

8 SO-EP* —

Ordering Information

PART HIGH-SIDE DRIVER LOW-SIDE DRIVER LOGIC LEVELS PIN COMPATIBLE

MAX5062AASA Noninverting Noninverting CMOS (V

DD

/ 2) HIP 2100IB

MAX5062BASA Noninverting Inverting CMOS (V

DD

/ 2) —

MAX5062CASA Noninverting Noninverting CMOS (V

DD

/ 2) —

MAX5062DASA Noninverting Inverting CMOS (V

DD

/ 2) —

Selector Guide

19-3502; Rev 2; 4/05

For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.

Selector Guide continued at end of data sheet.

*EP = Exposed paddle.

Ordering Information continued at end of data sheet.

PACKAGE

-40°C to +125°C

-40°C to +125°C

-40°C to +125°C

-40°C to +125°C

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,
Half-Bridge MOSFET Drivers

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(VDD= V

BST

= +8V to +12.6V, VHS= GND = 0V, BBM = open, TA= -40°C to +125°C, unless otherwise noted. Typical values are at

V

DD

= V

BST

= +12V and TA= +25°C.) (Note 1)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

(All voltages referenced to GND, unless otherwise noted.)
V

DD

, IN_H, IN_L, IN_L+, IN_L-, IN_H+, IN_H-........-0.3V to +15V

DL, BBM .....................................................-0.3V to (V

DD

+ 0.3V)

HS............................................................................-5V to +130V

DH to HS.....................................................-0.3V to (V

DD

+ 0.3V)

BST to HS ...............................................................-0.3V to +15V

dV/dt at HS ........................................................................50V/ns

Continuous Power Dissipation (T

A

= +70°C)

8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW

8-Pin SO With Exposed Pad (derate 19.2mW/°C

above +70°C)......................................................1538.5mW

12-Pin Thin QFN (derate 24.4mW/°C

above +70°C)......................................................1951.2mW

Maximum Junction Temperature .....................................+150°C

Operating Temperature Range .........................-40°C to +125°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

PARAMETER

CONDITIONS

UNITS

POWER SUPPLIES

Operating Supply Voltage V

DD

(Note 2) 8.0

V

MAX5062_/
MAX5063_

70

VDD Quiescent Supply Current I

DD

IN_H = IN_L = GND
(no switching)

MAX5064_

µA

VDD Operating Supply Current I

DDO

fSW = 500kHz, VDD = +12V 3 mA

BST Quiescent Supply Current I

BST

IN_H = IN_L = GND (no switching) 15 40 µA

BST Operating Supply Current I

BSTOfSW

= 500kHz, VDD = V

BST

= +12V 3 mA

UVLO (VDD to GND)

VDD rising 6.5 7.3 8.0 V

UVLO (BST to HS)

BST rising 6.0 6.9 7.8 V

UVLO Hysteresis 0.5 V

LOGIC INPUT

MAX5062_/MAX5064A,
CMOS (V

DD

/ 2) version

0.67 x

0.55 x

Input-Logic High V

IH_

MAX5063_/MAX5064B, TTL version 2

V

MAX5062_/MAX5064A,
CMOS (V

DD

/ 2) version

0.4 x

0.33 x

Input-Logic Low V

IL_

MAX5063_/MAX5064B, TTL version 1.4 0.8

V

MAX5062_/MAX5064A,
CMOS (V

DD

/ 2) version

1.6

Logic-Input Hysteresis V

HYS

MAX5063_/MAX5064B, TTL version

V

SYMBOL

MIN TYP MAX

12.6

140

120 260

UVLO

VDD

UVLO

BST

V

DD

V

DD

1.65

V

DD

0.25

V

DD

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,

Half-Bridge MOSFET Drivers

_______________________________________________________________________________________ 3

ELECTRICAL CHARACTERISTICS (continued)

(VDD= V

BST

= +8V to +12.6V, VHS= GND = 0V, BBM = open, TA= -40°C to +125°C, unless otherwise noted. Typical values are at

V

DD

= V

BST

= +12V and TA= +25°C.) (Note 1)

PARAMETER

CONDITIONS

UNITS

V

IN_H+

, V

IN_L+

= 0V

V

IN_H-

, V

IN_L-

, V

IN_H

= V

DD

Logic-Input Current I_IN

-1

+1 µA

IN_H+, IN_L+ IN_H, to GND

IN_L to V

DD

for MAX5062B/D,

MAX5063B/D

IN_H-, IN_L-, IN_H, to V

DD

Input Resistance R

IN

1MΩ

Input Capacitance C

IN

2.5 pF

HIGH-SIDE GATE DRIVER

HS Maximum Voltage

V

BST Maximum Voltage

V

TA = +25°C 2.5 3.3

Driver Output Resistance
(Sourcing)

VDD = 12V, IDH = 100mA
(sourcing)

T

A

= +125°C 3.5 4.6

Ω

TA = +25°C 2.1 2.8

Driver Output Resistance
(Sinking)

VDD = 12V, IDH = 100mA
(sinking)

T

A

= +125°C 3.2 4.2

Ω

DH Reverse Current (Latchup
Protection)

(Note 3)

mA

Power-Off Pulldown Clamp
Voltage

V

Peak Output Current (Sourcing) CL = 10nF, VDH = 0V 2 A

Peak Output Current (Sinking)

CL = 10nF, VDH = 12V 2 A

LOW-SIDE GATE DRIVER

TA = +25°C 2.5 3.3

Driver Output Resistance
(Sourcing)

VDD = 12V, IDL = 100mA
(sourcing)

T

A

= +125°C 3.5 4.6

Ω

TA = +25°C 2.1 2.8

Driver Output Resistance
(Sinking)

VDD = 12V, IDL = 100mA
(sinking)

T

A

= +125°C 3.2 4.2

Ω

Reverse Current at DL (Latchup
Protection)

(Note 3)

mA

Power-Off Pulldown Clamp
Voltage

V

DD

= 0V or floating, IDL = 1mA (sinking)

V

Peak Output Current (Sourcing) I

PK_LP

CL = 10nF, VDL = 0V 2 A

Peak Output Current (Sinking) I

PK_LN

CL = 10nF, VDL = 12V 2 A

INTERNAL BOOTSTRAP DIODE

Forward Voltage Drop V

f

I

BST

= 100mA

V

Turn-On and Turn-Off Time t

R

I

BST

= 100mA 40 ns

SYMBOL

V

= VDD for MAX5062B/D, MAX5063B/D

IN_L

V

= 0V for MAX5062A/C, MAX5063A/C

IN_L

V

HS_MAX

V

BST_MAX

R

ON_HP

IN_L for MAX5062A/C, MAX5063A/C to GND

R

ON_HN

V

BST

I

DH_PEAK

= 0V or floating, IDH = 1mA (sinking) 0.94 1.16

R

ON_LP

R

ON_LN

MIN TYP MAX

125

140

400

0.001

400

0.95 1.16

0.91 1.11

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,
Half-Bridge MOSFET Drivers

4 _______________________________________________________________________________________

Note 1: All devices are 100% tested at TA= +125°C. Limits over temperature are guaranteed by design.
Note 2: Ensure that the V

DD

-to-GND or BST-to-HS voltage does not exceed 13.2V.

Note 3: Guaranteed by design, not production tested.
Note 4: Break-before-make time is calculated by t

BBM

= 8ns x (1 + R

BBM

/ 10kΩ).

ELECTRICAL CHARACTERISTICS (continued)

(VDD= V

BST

= +8V to +12.6V, VHS= GND = 0V, BBM = open, TA= -40°C to +125°C, unless otherwise noted. Typical values are at

V

DD

= V

BST

= +12V and TA= +25°C.) (Note 1)

PARAMETER

CONDITIONS

UNITS

SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS

CL = 1000pF 7

CL = 5000pF 33Rise Time t

R

CL = 10,000pF 65

ns

CL = 1000pF 7

CL = 5000pF 33

Fall Time t

F

CL = 10,000pF 65

ns

CMOS 30 55

Turn-On Propagation Delay Time

t

D_ON

Figure 1, CL = 1000pF
(Note 3)

TTL 35 63

ns

CMOS 30 55

Turn-Off Propagation Delay Time

t

D_OFF

Figure 1, CL = 1000pF
(Note 3)

TTL 35 63

ns

Delay Matching Between
Inverting Input to Output and
Noninverting Input to Output

CL = 1000pF, BBM open for MAX5064,
Figure 1 (Note 3)

28ns

Delay Matching Between Driver­Low and Driver-High

CL = 1000pF, BBM open for MAX5064,
Figure 1 (Note 3)

28ns

R

BBM

= 10kΩ 16

R

BBM

= 47kΩ (Notes 3, 4) 40 56 72

Break-Before-Make Accuracy
(MAX5064 Only)

R

BBM

= 100kΩ 95

ns

Internal Nonoverlap 1ns

SYMBOL

t

MATCH1

t

MATCH2

MIN TYP MAX

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,

Half-Bridge MOSFET Drivers

_______________________________________________________________________________________ 5

UNDERVOLTAGE LOCKOUT

(V

DD

AND V

BST

RISING) vs. TEMPERATURE

MAX5062/3/4 toc01

TEMPERATURE (°C)

UVLO (V)

1109565 80-10 5 20 35 50-25

6.6

6.7

6.8

6.9

7.0

7.1

7.2

7.3

7.4

7.5

6.5

-40 125

UVLO

VDD

UVLO

BST

VDD AND BST UNDERVOLTAGE LOCKOUT

HYSTERESIS vs. TEMPERATURE

MAX5062/3/4 toc02

TEMPERATURE (°C)

UVLO HYSTERESIS (V)

1109565 80-10 5 20 35 50-25

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

-40 125

UVLO

BST

HYSTERESIS

UVLO

VDD

HYSTERESIS

IDD vs. V

DD

MAX5062/3/4 toc03

40µs/div

V

DD

2V/div

500µA/div

0A

0V

I

DD

MAX5064
IN_L-, IN_H- = V

DD

IN_L+, IN_H+ = GND

I

DDO

+ I

BSTO

vs. V

DD

(fSW = 250kHz)

MAX5062/3/4 toc04

VDD (V)

I

DDO

+

I

BSTO

(mA)

1210 11345678912

1.0

0.8

0.6

0.4

0.2

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

0

013

0

60

40

20

80

100

120

140

160

180

200

0.5 0.70.6 0.8 0.9 1.0 1.1

INTERNAL BST DIODE

(I-V) CHARACTERISTICS

MAX5062/3/4 toc05

VDD - V

BST

(V)

I

DIODE

(mA)

TA = +125°C

TA = +25°C

TA = 0°C

TA = -40°C

0

60

40

20

80

100

120

140

160

0426810153 7 9 1112131415

VDD QUIESCENT CURRENT

vs. V

DD

(NO SWITCHING)

MAX5062/3/4 toc06

VDD (V)

I

DD

(µA)

TA = -40°C

TA = +125°C

MAX5064

TA = +25°C, TA = 0°C

0

6

3

9

12

15

18

21

0426810153 7 9 1112131415

BST QUIESCENT CURRENT

vs. BST VOLTAGE

MAX5062/3/4 toc07

V

BST

(V)

I

BST

(µA)

V

BST

= VDD + 1V,

NO SWITCHING

TA = +125°C

TA = -40°C, TA = 0°C, TA = +25°C

Typical Operating Characteristics

(Typical values are at VDD= V

BST

= +12V and TA= +25°C, unless otherwise specified.)

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,
Half-Bridge MOSFET Drivers

6 _______________________________________________________________________________________

VDD AND BST OPERATING SUPPLY

CURRENT vs. FREQUENCY

MAX5062/3/4 toc08

FREQUENCY (kHz)

I

DDO

+ I

BSTO

(mA)

900700 800200 300 400 500 600100

1

2

3

4

5

6

7

8

9

10

0

0 1000

CL = 0

DH OR DL OUTPUT LOW VOLTAGE

vs. TEMPERATURE

MAX5062/3/4 toc09

TEMPERATURE (°C)

OUTPUT LOW VOLTAGE (V)

1109565 80-10 5 20 35 50-25

0.12

0.14

0.16

0.18

0.20

0.24

0.28

0.32

0.34

0.22

0.26

0.30

0.10

-40 125

SINKING 100mA

DH OR DL FALL TIME

vs. TEMPERATURE (C

LOAD

= 10nF)

MAX5062/3/4 toc12

TEMPERATURE (°C)

t

F

(ns)

1109565 80-10 5 20 35 50-25

10

20

30

40

50

70

110
100

90

120

60

80

0

-40 125

VDD = V

BST

= 8V

VDD = V

BST

= 12V

DH OR DL RISE PROPAGATION DELAY

vs. TEMPERATURE

MAX5062/3/4 toc13

TEMPERATURE (°C)

PROPAGATION DELAY (ns)

1109565 80-10 5 20 35 50-25

5

10

15

20

25

35

55

60

30

45

50

40

0

-40 125

DH

DL

PEAK DH AND DL

SOURCE/SINK CURRENT

MAX5062/3/4 toc10

1µs/div

DH OR DL5V/div

SINK AND SOURCE
CURRENT

2A/div

CL = 100nF

DH OR DL RISE TIME

vs. TEMPERATURE (C

L

= 10nF)

MAX5062/3/4 toc11

TEMPERATURE (°C)

t

R

(ns)

1109565 80-10 5 20 35 50-25

12

24

36

48

60

84

108

120

72

96

0

-40 125

VDD = V

BST

= 8V

VDD = V

BST

= 12V

Typical Operating Characteristics (continued)

(Typical values are at VDD= V

BST

= +12V and TA= +25°C, unless otherwise specified.)