Rainbow Electronics MAX19999 User Manual

General Description

The MAX19999 dual-channel downconverter provides

8.3dB of conversion gain, +24dBm input IP3, +11.4dBm
1dB input compression point, and a noise figure of

10.5dB for 3000MHz to 4000MHz WiMAX™ and LTE
diversity receiver applications. With an optimized LO fre­quency range of 2650MHz to 3700MHz, this mixer is
ideal for low-side LO injection architectures.

In addition to offering excellent linearity and noise per­formance, the MAX19999 also yields a high level of
component integration. This device includes two dou­ble-balanced passive mixer cores, two LO buffers, and
a pair of differential IF output amplifiers. Integrated on­chip baluns allow for single-ended RF and LO inputs.

The MAX19999 requires a nominal LO drive of 0dBm
and a typical supply current of 388mA at VCC= +5.0V
or 279mA at VCC= +3.3V.

The MAX19999 is pin compatible with the MAX19997A
1800MHz to 2900MHz mixer and pin similar with the
MAX19985/MAX19985A and MAX19995/MAX19995A
series of 700MHz to 2200MHz mixers, making this
entire family of downconverters ideal for applications
where a common PCB layout is used across multiple
frequency bands.

The MAX19999 is available in a compact 6mm x 6mm,
36-pin thin QFN package with an exposed pad.
Electrical performance is guaranteed over the extended
temperature range, from TC= -40°C to +85°C.

Applications

3.5GHz WiMAX and LTE Base Stations

Fixed Broadband Wireless Access

Microwave Links

Wireless Local Loop

Private Mobile Radios

Military Systems

Features

o 3000MHz to 4000MHz RF Frequency Range
o 2650MHz to 3700MHz LO Frequency Range
o 50MHz to 500MHz IF Frequency Range
o 8.3dB Conversion Gain
o +24dBm Input IP3
o 10.5dB Noise Figure
o +11.4dBm Input 1dB Compression Point
o 74dBc Typical 2 x 2 Spurious Rejection at

P

RF

= -10dBm

o Dual Channels Ideal for Diversity Receiver

Applications

o Integrated LO Buffer
o Integrated LO and RF Baluns for Single-Ended

Inputs

o Low -3dBm to +3dBm LO Drive
o Pin Compatible with the MAX19997A 1800MHz to

2900MHz Mixer

o Pin Similar to the MAX9995/MAX9995A and

MAX19995/MAX19995A 1700MHz to 2200MHz
Mixers and the MAX9985/MAX9985A and
MAX19985/MAX19985A 700MHz to 1000MHz
Mixers

o 39dB Channel-to-Channel Isolation
o Single +5.0V or +3.3V Supply
o External Current-Setting Resistors Provide Option

for Operating Device in Reduced-Power/Reduced­Performance Mode

MAX19999

Dual, SiGe High-Linearity, 3000MHz to

4000MHz Downconversion Mixer with LO Buffer

________________________________________________________________

Maxim Integrated Products

1

Ordering Information

19-4293; Rev 0; 10/08

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.

PART TEMP RANGE PIN-PACKAGE

MAX19999ETX+ -40°C to +85°C 36 Thin QFN-EP*

MAX19999ETX+T -40°C to +85°C 36 Thin QFN-EP*

WiMAX is a trademark of WiMAX Forum.

+

Denotes a lead-free/RoHS-compliant package.

*

EP = Exposed pad.

T = Tape and reel.

Pin Configuration/Functional Diagram and Typical
Application Circuit appear at end of data sheet.

MAX19999

Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, no input RF or LO signals applied, VCC= +4.75V to +5.25V, TC= -40°C to +85°C. Typical values are at

V

CC

= +5.0V, TC= +25°C, unless otherwise noted. R1 = R4 = 750Ω, R2 = R5 = 698Ω.)

+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, no input RF or LO signals applied, TC= -40°C to +85°C. Typical values are at

V

CC

= +3.3V, TC= +25°C, unless otherwise noted. R1, R4 = 1.1kΩ; R2, R5 = 845Ω.) (Note 5)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

VCCto GND...........................................................-0.3V to +5.5V

RF_, LO to GND.....................................................-0.3V to +0.3V

IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M,

LO_ADJ_D to GND.................................-0.3V to (V

CC

+ 0.3V)

RF_, LO Input Power ......................................................+15dBm

RF_, LO Current (RF and LO are DC shorted to GND

through balun).................................................................50mA

Continuous Power Dissipation (Note 1) ..............................8.7W

θ

JA

(Notes 2, 3)..............................................................+38°C/W

θ

JC

(Note 3).....................................................................7.4°C/W

Operating Case Temperature Range

(Note 4) ...................................................T

C

= -40°C to +85°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

Note 1: Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed

pad is known while the device is soldered down to a PCB. See the

Applications Information

section for details. The junction

temperature must not exceed +150°C.

Note 2: Junction temperature T

J

= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is

known. The junction temperature must not exceed +150°C.

Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-

layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial

.

Note 4: T

C

is the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.

RECOMMENDED AC OPERATING CONDITIONS

Supply Voltage VCC 4.75 5 5.25 V

Supply Current ICC Total supply current 388 420 mA

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Supply Voltage V

Supply Current I

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

CC

CC

(Note 6) 3 3.3 3.6 V

Total supply current 279 mA

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

RF Frequency f

LO Frequency f

IF Frequency f

LO Drive Level P

RF

LO

IF

LO

(Notes 5, 7) 3000 4000 MHz

(Notes 5, 7) 2650 3700 MHz

Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the Typical
Application Circuit, IF matching
components affect the IF frequency range
(Notes 5, 7)

Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Notes 5, 7)

(Note 7) -3 +3 dBm

100 500

50 250

MHz

MAX19999

Dual, SiGe High-Linearity, 3000MHz to

4000MHz Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 3

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO= -3dBm to +3dBm,

P

RF

= -5dBm, fRF= 3200MHz to 3900MHz, fLO= 2800MHz to 3600MHz, fIF= 350MHz, fRF> fLO, TC= -40°C to +85°C. Typical val-

ues are at V

CC

= +5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 3550MHz, fLO= 3200MHz, fIF= 350MHz, TC= +25°C, unless otherwise

noted.) (Note 8)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Conversion Gain G

Conversion Gain Flatness

Gain Variation Over Temperature TC

Input Compression Point IP

Third-Order Input Intercept Point IIP3

Third-Order Input Intercept Point
Variation Over Temperature

Noise Figure NF

Noise Figure Temperature
Coefficient

Noise Figure Under Blocking
Conditions

2RF-2LO Spurious Rejection 2 x 2

3RF-3LO Spurious Rejection 3 x 3

RF Input Return Loss

LO Input Return Loss

IF Output Impedance Z

TC = +25°C (Notes 6, 9) 7.3 8.3 9.3 dB

C

f

= 3200MHz to 3900MHz, over any

TC

NF

CG

1dB

SSB

NF

IF

RF

100MHz band

fRF = 3200MHz to 3900MHz, TC = -40°C to
+85°C

(Notes 6, 9, 10) 9.8 11.4 dBm

f

- f

RF1

(Notes 6, 9)

f

RF

P

RF

(Notes 6, 9)

f

RF1

Single sideband, no blockers present
(Notes 5, 6)

Single sideband, no blockers present,
f

RF

Single sideband, no blockers present,
T

C

f

BLOC KE R

f

RF

B

V

C C

f

RF

3150MHz, f
175MHz, T

f

RF

3150MHz, f

116.67MHz, T

LO on and IF terminated into a matched
impedance

RF and IF terminated into a matched
impedance

Nominal differential impedance at the IC’s
IF outputs

= 1MHz, PRF = -5dBm per tone

RF2

= 3550MHz, f

= -5dBm per tone, TC = +25°C

- f

= 1MHz, TC = -40°C to +85°C ±0.3 dBm

RF2

= 3500MHz, TC = +25°C (Notes 5, 6)

= -40°C to +85°C

= 3700M H z, P

= 3450M H z, fLO = 3100M H z, P LO = 0d Bm,

= 5.0V, TC = + 25°C ( Notes 5, 6, 11)

= 3500MHz, fLO =

SPUR

= +25°C

C

= 3500MHz, fLO =

SPUR

RF1

= fLO +

= fLO +

= +25°C

C

- f

= 1MHz,

RF2

BLOC KE R

PRF = -10dBm,
(Notes 5, 6)

P
(Notes 6, 9)

PRF = -10dBm,
(Notes 5, 6)

P
(Notes 6, 9)

= 8d Bm,

= -5dBm,

RF

= -5dBm,

RF

21.6 24.3

22 24.3

68 74

63 69

77 86

67 76

0.15 dB

-0.01 dB/°C

10.5 13

10.5 11.5

0.018 dB/°C

21 25 dB

15.4 dB

14 dB

200 Ω

dBm

dB

dBc

dBc

MAX19999

Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer

4 _______________________________________________________________________________________

+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit,

typical values are at VCC= +3.3V, PRF= -5dBm, PLO= 0dBm, fRF= 3550MHz, fLO= 3200MHz,

f

IF

= 350MHz, TC= +25°C, unless otherwise noted.) (Note 8)

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit

, VCC= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO= -3dBm to +3dBm,

P

RF

= -5dBm, fRF= 3200MHz to 3900MHz, fLO= 2800MHz to 3600MHz, fIF= 350MHz, fRF> fLO, TC= -40°C to +85°C. Typical val-

ues are at V

CC

= +5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 3550MHz, fLO= 3200MHz, fIF= 350MHz, TC= +25°C, unless otherwise

noted.) (Note 8)

IF Output Return Loss

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

RF-to-IF Isolation 28 dB

LO Leakage at RF Port (Notes 6, 9) -31 -24 dBm

2LO Leakage at RF Port -30 dBm

LO Leakage at IF Port -23 dBm

Channel Isolation

Conversion Gain G

Conversion Gain Flatness

Gain Variation Over Temperature TC

Input Compression Point IP

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

RF terminated into 50Ω, LO driven by a 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical

Application Circuit

RFMAIN (RFDIV ) converted power
measured at IFDIV (IFMAIN), relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω (Notes 6, 9)

C

f

= 3200MHz to 3900MHz, over any

RF

100MHz band

fRF = 3200MHz to 3900MHz, TC = -40°C to

CG

+85°C

1dB

36 39 dB

18 dB

8.0 dB

0.15 dB

-0.01 dB/°C

8.4 dBm

Third-Order Input Intercept Point IIP3 f

Third-Order Input Intercept
Variation Over Temperature

Noise Figure NF

Noise Figure Temperature
Coefficient

2RF-2LO Spurious Rejection 2 x 2 f

3RF-3LO Spurious Rejection 3 x 3 f

RF Input Return Loss

LO Input Return Loss

TC

SSB

NF

- f

RF1

f

RF1

Single sideband, no blockers present 10.5 dB

Single sideband, no blockers present,
T

C

SPUR

SPUR

LO on and IF terminated into a matched
impedance

RF and IF terminated into a matched
impedance

= 1MHz, PRF = -5dBm per tone 20.3 dBm

RF2

- f

= 1MHz, TC = -40°C to +85°C ±0.3 dBm

RF2

= -40°C to +85°C

= fLO + 175MHz

= fLO + 116.67MHz

PRF = -10dBm 74

= -5dBm 69

P

RF

PRF = -10dBm 75

= -5dBm 65

P

RF

0.018 dB/°C

16 dB

15.5 dB

dBc

dBc

MAX19999

Dual, SiGe High-Linearity, 3000MHz to

4000MHz Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 5

+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit,

typical values are at VCC= +3.3V, PRF= -5dBm, PLO= 0dBm, fRF= 3550MHz, fLO= 3200MHz,

f

IF

= 350MHz, TC= +25°C, unless otherwise noted.) (Note 8)

Note 5: Not production tested.
Note 6: Guaranteed by design and characterization.
Note 7: Operation outside this range is possible, but with degraded performance of some parameters. See the

Typical Operating

Characteristics

section.

Note 8: All limits reflect losses of external components, including a 0.9dB loss at f

IF

= 350MHz due to the 4:1 impedance trans-

former. Output measurements were taken at IF outputs of the

Typical Application Circuit

.

Note 9: 100% production tested for functional performance.
Note 10: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Note 11: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of

all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021:

Specifications and

Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers

.

IF Output Impedance Z

IF Output Return Loss

RF-to-IF Isolation 28 dB

LO Leakage at RF Port -36 dBm

2LO Leakage at RF Port -34 dBm

LO Leakage at IF Port -27 dBm

Channel Isolation

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Nominal differential impedance at the IC’s

IF

IF outputs

RF terminated into 50Ω, LO driven by a 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical

Application Circuit

RFM AIN ( RFD IV ) conver ted p ow er
m easur ed at IFD IV ( IFM AIN ) , r el ati ve to
IFM AIN ( IFD IV ) , al l unused p or ts ter m i nated
to 50Ω

200 Ω

19 dB

38.5 dB

Typical Operating Characteristics

(

Typical Application Circuit

, VCC= +5.0V, LO is low-side injected for a 350MHz IF, PLO= 0dBm, PRF= -5dBm, TC=+25°C, unless

otherwise noted.)

MAX19999

Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer

6 _______________________________________________________________________________________

CONVERSION GAIN vs. RF FREQUENCY

10

9

TC = +25°C

8

CONVERSION GAIN (dB)

7

6

3000 4000

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

27

PRF = -5dBm/TONE

26

25

24

INPUT IP3 (dBm)

23

TC = +85°C

TC = +25°C

TC = -30°C

TC = +85°C

TC = -30°C

CONVERSION GAIN vs. RF FREQUENCY

10

MAX19999 toc01

3800360034003200

9

8

CONVERSION GAIN (dB)

7

6

PLO = -3dBm, 0dBm, +3dBm

3000 4000

RF FREQUENCY (MHz)

3800360034003200

MAX19999 toc02

INPUT IP3 vs. RF FREQUENCY

27

PRF = -5dBm/TONE

MAX19999 toc04

26

25

24

INPUT IP3 (dBm)

23

PLO = -3dBm, 0dBm, +3dBm

MAX19999 toc05

CONVERSION GAIN vs. RF FREQUENCY

10

9

8

CONVERSION GAIN (dB)

7

6

3000 4000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

27

PRF = -5dBm/TONE

26

25

24

INPUT IP3 (dBm)

23

VCC = 4.75V, 5.0V, 5.25V

MAX19999 toc03

3800360034003200

MAX19999 toc06

MAX19999 toc08

NOISE FIGURE (dB)

22

3000 4000

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

13

12

11

10

VCC = 4.75V, 5.0V, 5.25V

9

8

7

3200 3375 3550 3725 3900

RF FREQUENCY (MHz)

22

3000 4000

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

13

TC = +85°C

12

11

10

NOISE FIGURE (dB)

9

8

7

3200 3900

TC = +25°C

TC = -30°C

372535503375

RF FREQUENCY (MHz)

22

3800360034003200

3000 4000

RF FREQUENCY (MHz)

3800360034003200

NOISE FIGURE vs. RF FREQUENCY

13

12

MAX19999 toc07

11

10

PLO = -3dBm, 0dBm, +3dBm

9

NOISE FIGURE (dB)

8

7

3200 3375 3550 3725 3900

RF FREQUENCY (MHz)

3800360034003200

MAX19999 toc09

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +5.0V, LO is low-side injected for a 350MHz IF, PLO= 0dBm, PRF= -5dBm, TC=+25°C, unless

otherwise noted.)

MAX19999

Dual, SiGe High-Linearity, 3000MHz to

4000MHz Downconversion Mixer with LO Buffer

_______________________________________________________________________________________

7

2RF-2LO RESPONSE vs. RF FREQUENCY

90

PRF = -5dBm

80

TC = +85°C

70

2RF-2LO RESPONSE (dBc)

60

50

3000 3200 3400 3600 3800 4000

TC = +25°C

TC = -30°C

RF FREQUENCY (MHz)

3RF-3LO RESPONSE vs. RF FREQUENCY

95

PRF = -5dBm

85

90

MAX19999 toc10

80

70

2RF-2LO RESPONSE (dBc)

60

50

300032003400360038004000

95

MAX19999 toc13

85

2RF-2LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

PLO = 0dBm

PLO = +3dBm

PLO = -3dBm

RF FREQUENCY (MHz)

3RF-3LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

MAX19999 toc11

MAX19999 toc14

2RF-2LO RESPONSE vs. RF FREQUENCY

90

PRF = -5dBm

80

70

2RF-2LO RESPONSE (dBc)

60

VCC = 4.75V, 5.0V, 5.25V

50

3000 3200 3400 3600 3800 4000

RF FREQUENCY (MHz)

3RF-3LO RESPONSE vs. RF FREQUENCY

95

PRF = -5dBm

85

MAX19999 toc12

MAX19999 toc15

75

3RF-3LO RESPONSE (dBc)

65

55

13

12

(dBm)

1dB

11

INPUT P

10

9

TC = -30°C, +25°C, +85°C

3000 3200 3400 3600 3800 4000

RF FREQUENCY (MHz)

INPUT P

TC = -30°C

3200 3375 3550 3725 3900

vs. RF FREQUENCY

1dB

TC = +85°C

TC = +25°C

RF FREQUENCY (MHz)

75

3RF-3LO RESPONSE (dBc)

65

55

300032003400360038004000

13

MAX19999 toc16

12

(dBm)

1dB

11

INPUT P

10

9

3200 3375 3550 3725 3900

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

INPUT P

PLO = -3dBm, 0dBm, +3dBm

vs. RF FREQUENCY

1dB

RF FREQUENCY (MHz)

75

3RF-3LO RESPONSE (dBc)

65

55

3000 3200 3400 3600 3800 4000

13

MAX19999 toc17

12

(dBm)

1dB

11

INPUT P

10

9

3200 3375 3550 3725 3900

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

INPUT P

1dB

VCC = 5.25V

VCC = 5.0V

RF FREQUENCY (MHz)

vs. RF FREQUENCY

MAX19999 toc18

VCC = 4.75V

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +5.0V, LO is low-side injected for a 350MHz IF, PLO= 0dBm, PRF= -5dBm, TC=+25°C, unless

otherwise noted.)

MAX19999

Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer

8 _______________________________________________________________________________________

CHANNEL ISOLATION vs. RF FREQUENCY

50

45

40

CHANNEL ISOLATION (dB)

35

30

0

-10

-20

-30

-40

LO LEAKAGE AT IF PORT (dBm)

-50

TC = -30°C, +25°C, +85°C

3000 3200 3400 3600 3800 4000

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

TC = +25°C, +85°C

TC = -30°C

CHANNEL ISOLATION vs. RF FREQUENCY

50

MAX19999 toc19

45

40

CHANNEL ISOLATION (dB)

35

30

300032003400360038004000

0

-10

MAX19999 toc22

-20

PLO = -3dBm, 0dBm, +3dBm

-30

-40

LO LEAKAGE AT IF PORT (dBm)

-50

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

CHANNEL ISOLATION vs. RF FREQUENCY

50

MAX19999 toc20

45

40

CHANNEL ISOLATION (dB)

35

30

3000 3200 3400 3600 3800 4000

0

-10

MAX19999 toc23

-20

VCC = 4.75V, 5.0V, 5.25V

-30

-40

LO LEAKAGE AT IF PORT (dBm)

-50

MAX19999 toc21

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

MAX19999 toc24

-60
2600 2800 3000 3200 3400 3600

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION vs. RF FREQUENCY

40

TC = +85°C

30

20

RF-TO-IF ISOLATION (dB)

10

3000 3200 3400 3600 3800 4000

TC = +25°C

TC = -30°C

RF FREQUENCY (MHz)

-60

40

MAX19999 toc25

30

20

RF-TO-IF ISOLATION (dB)

10

260028003000320034003600

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

300032003400360038004000

RF FREQUENCY (MHz)

-60
2600 2800 3000 3200 3400 3600

40

MAX19999 toc26

30

20

RF-TO-IF ISOLATION (dB)

10

3000 3200 3400 3600 3800 4000

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION vs. RF FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

MAX19999 toc27

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +5.0V, LO is low-side injected for a 350MHz IF, PLO= 0dBm, PRF= -5dBm, TC=+25°C, unless

otherwise noted.)

MAX19999

Dual, SiGe High-Linearity, 3000MHz to

4000MHz Downconversion Mixer with LO Buffer

_______________________________________________________________________________________

9

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-20

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50
2700 3100 3500 3900

TC = -30°C, +25°C, +85°C

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-20

TC = -30°C, +25°C, +85°C

-10

MAX19999 toc28

-20

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50
2700 3100 3500 3900

-10

MAX19999 toc31

-20

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

-10

MAX19999 toc29

-20

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50

-10

MAX19999 toc32

-20

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

2700 3100 3500 3900

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

MAX19999 toc30

MAX19999 toc33

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
2700 3100 3500 3900

LO FREQUENCY (MHz)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

5

10

15

20

RF PORT RETURN LOSS (dB)

25

30

3000 3200 3400 3600 3800 4000

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
2700 3100 3500 3900

fIF = 350MHz

MAX19999 toc34

LO FREQUENCY (MHz)

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
2700 3100 3500 3900

LO FREQUENCY (MHz)

IF PORT RETURN LOSS vs. IF FREQUENCY

0

fLO = 3200MHz

5

10

15

20

IF PORT RETURN LOSS (dB)

25

30

50 140 230 320 410 500

VCC = 4.75V, 5.0V, 5.25V

IF FREQUENCY (MHz)

MAX19999 toc35

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +5.0V, LO is low-side injected for a 350MHz IF, PLO= 0dBm, PRF= -5dBm, TC=+25°C, unless

otherwise noted.)

MAX19999

Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer

10 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit,

VCC= +3.3V, LO is low-side injected for a 350MHz IF, PLO= 0dBm, PRF= -5dBm, TC=+25°C, unless

otherwise noted.)

LO PORT RETURN LOSS vs. LO FREQUENCY

LO FREQUENCY (MHz)

LO PORT RETURN LOSS (dB)

MAX19999 toc36

2650 2900 3150 3400 3650

25

20

15

10

5

0

PLO = -3dBm

PLO = 0dBm

PLO = +3dBm

CONVERSION GAIN vs. RF FREQUENCY

MAX19999 toc38

RF FREQUENCY (MHz)

CONVERSION GAIN (dB)

3800360034003200

7

8

9

10

6

3000 4000

TC = +25°C

TC = -30°C

VCC = 3.3V

TC = +85°C

CONVERSION GAIN vs. RF FREQUENCY

MAX19999 toc39

RF FREQUENCY (MHz)

CONVERSION GAIN (dB)

3800360034003200

7

8

9

10

6

3000 4000

VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

CONVERSION GAIN vs. RF FREQUENCY

MAX19999 toc40

RF FREQUENCY (MHz)

CONVERSION GAIN (dB)

3800360034003200

7

8

9

10

6

3000 4000

VCC = 3.0V, 3.3V, 3.6V

SUPPLY CURRENT vs. TEMPERATURE (TC)

400

VCC = 5.25V

390

MAX19999 toc37

380

370

SUPPLY CURRENT (mA)

360

350

VCC = 4.75V

-35 -15 5 25 45 65 85
TEMPERATURE (°C)

VCC = 5.0V

Typical Operating Characteristics (continued)

(

Typical Application Circuit,

VCC= +3.3V, LO is low-side injected for a 350MHz IF, PLO= 0dBm, PRF= -5dBm, TC=+25°C, unless

otherwise noted.)

MAX19999

Dual, SiGe High-Linearity, 3000MHz to

4000MHz Downconversion Mixer with LO Buffer

______________________________________________________________________________________

11

INPUT IP3 vs. RF FREQUENCY

23

TC = +85°C

22

TC = +25°C

21

20

INPUT IP3 (dBm)

19

18

3000 4000

TC = -30°C

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

13

TC = +85°C

12

11

PRF = -5dBm/TONE

VCC = 3.3V

3800360034003200

VCC = 3.3V

MAX19999 toc41

MAX19999 toc44

INPUT IP3 vs. RF FREQUENCY

23

22

21

20

INPUT IP3 (dBm)

19

18

3000 4000

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

PRF = -5dBm/TONE

VCC = 3.3V

NOISE FIGURE vs. RF FREQUENCY

13

12

11

VCC = 3.3V

MAX19999 toc42

INPUT IP3 (dBm)

3800360034003200

MAX19999 toc45

INPUT IP3 vs. RF FREQUENCY

23

22

21

20

19

18

3000 4000

VCC = 3.0V, 3.3V, 3.6V

RF FREQUENCY (MHz)

PRF = -5dBm/TONE

3800360034003200

NOISE FIGURE vs. RF FREQUENCY

13

12

11

MAX19999 toc43

MAX19999 toc46

10

NOISE FIGURE (dB)

9

TC = -30°C

8

7

3200 3900

TC = +25°C

372535503375

RF FREQUENCY (MHz)

2RF-2LO RESPONSE vs. RF FREQUENCY

90

80

70

2RF-2LO RESPONSE (dBc)

60

50

TC = +85°C

TC = -30°C

3000 4000

RF FREQUENCY (MHz)

PRF = -5dBm
VCC = 3.3V

TC = +25°C

3600 380034003200

10

NOISE FIGURE (dB)

9

8

7

3200 3900

90

MAX19999 toc47

80

70

2RF-2LO RESPONSE (dBc)

60

50

3000 4000

PLO = -3dBm, 0dBm, +3dBmPLO = -3dBm, 0dBm, +3dBmPLO = -3dBm, 0dBm, +3dBm

372535503375

RF FREQUENCY (MHz)

2RF-2LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

PLO = 0dBm

PLO = +3dBm

34003200 38003600

RF FREQUENCY (MHz)

VCC = 3.3V

PLO = -3dBm

10

NOISE FIGURE (dB)

9

8

7

3200 3900

90

MAX19999 toc48

80

70

2RF-2LO RESPONSE (dBc)

60

50

3000 4000

VCC = 3.0V, 3.3V, 3.6V

372535503375

RF FREQUENCY (MHz)

2RF-2LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

MAX19999 toc49

VCC = 3.6V

VCC = 3.3V

VCC = 3.0V

34003200 38003600

RF FREQUENCY (MHz)

Typical Operating Characteristics (continued)

(

Typical Application Circuit,

VCC= +3.3V, LO is low-side injected for a 350MHz IF, PLO= 0dBm, PRF= -5dBm, TC=+25°C, unless

otherwise noted.)

MAX19999

Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer

12 ______________________________________________________________________________________

3RF-3LO RESPONSE vs. RF FREQUENCY

85

75

TC = +85°C

65

3RF-3LO RESPONSE (dBc)

(dBm)

INPUT P

TC = -30°C

55

45

3000 4000

INPUT P

10

TC = +85°C

9

1dB

8

7

34003200 38003600

RF FREQUENCY (MHz)

vs. RF FREQUENCY

1dB

TC = -30°C

TC = +25°C

TC = +25°C

PRF = -5dBm

VCC = 3.3V

VCC = 3.3V

85

MAX19999 toc50

75

65

3RF-3LO RESPONSE (dBc)

55

45

3000 4000

10

MAX19999 toc53

9

(dBm)

1dB

8

INPUT P

7

3RF-3LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

34003200 38003600

RF FREQUENCY (MHz)

INPUT P

vs. RF FREQUENCY

1dB

PLO = -3dBm, 0dBm, +3dBm

VCC = 3.3V

85

MAX19999 toc51

75

65

3RF-3LO RESPONSE (dBc)

55

45

3000 4000

10

MAX19999 toc54

9

(dBm)

1dB

8

INPUT P

7

3RF-3LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

VCC = 3.0V, 3.3V, 3.6V

34003200 38003600

RF FREQUENCY (MHz)

INPUT P

VCC = 3.0V

vs. RF FREQUENCY

1dB

VCC = 3.6V

VCC = 3.3V

MAX19999 toc52

MAX19999 toc55

6

3200 3900

3550 37253375

RF FREQUENCY (MHz)

CHANNEL ISOLATION vs. RF FREQUENCY

50

45

40

CHANNEL ISOLATION (dB)

35

30

3000 4000

TC = -30°C, +25°C, +85°C

3400 38003200 3600

RF FREQUENCY (MHz)

VCC = 3.3V

MAX19999 toc56

6

3200 3900

RF FREQUENCY (MHz)

372535503375

CHANNEL ISOLATION vs. RF FREQUENCY

50

45

40

CHANNEL ISOLATION (dB)

35

30

PLO = -3dBm, 0dBm, +3dBm

3000 4000

3400 38003200 3600

RF FREQUENCY (MHz)

VCC = 3.3V

6

3200 3900

CHANNEL ISOLATION vs. RF FREQUENCY

50

MAX19999 toc57

45

40

CHANNEL ISOLATION (dB)

35

30

3000 4000

RF FREQUENCY (MHz)

VCC = 3.0V, 3.3V, 3.6V

RF FREQUENCY (MHz)

372535503375

MAX19999 toc58

3800360034003200

Typical Operating Characteristics (continued)

(

Typical Application Circuit,

VCC= +3.3V, LO is low-side injected for a 350MHz IF, PLO= 0dBm, PRF= -5dBm, TC=+25°C, unless

otherwise noted.)

MAX19999

Dual, SiGe High-Linearity, 3000MHz to

4000MHz Downconversion Mixer with LO Buffer

______________________________________________________________________________________

13

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

0

-10

-20

-30

-40

LO LEAKAGE AT IF PORT (dBm)

-50

-60
2600 3600

TC = +85°C

TC = +25°C

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION vs. RF FREQUENCY

40

VCC = 3.3V

TC = +85°C

30

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

VCC = 3.0V, 3.3V, 3.6V

2600 3600

LO FREQUENCY (MHz)

3400320030002800

RF-TO-IF ISOLATION vs. RF FREQUENCY

VCC = 3.0V, 3.3V, 3.6V

VCC = 3.3V

TC = -30°C

3400320030002800

0

-10

MAX19999 toc59

-20

-30

-40

LO LEAKAGE AT IF PORT (dBm)

-50

-60
2600 3600

RF-TO-IF ISOLATION vs. RF FREQUENCY

40

VCC = 3.3V

MAX19999 toc62

30

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

PLO = -3dBm, 0dBm, +3dBm

VCC = 3.3V

3400320030002800

0

-10

MAX19999 toc60

-20

-30

-40

LO LEAKAGE AT IF PORT (dBm)

-50

-60

40

MAX19999 toc63

30

MAX19999 toc61

MAX19999 toc64

20

RF-TO-IF ISOLATION (dB)

TC = -30°C

10

3000 4000

TC = +25°C

RF FREQUENCY (MHz)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-20

TC = -30°C, +25°C, +85°C

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50
2700 3900

LO FREQUENCY (MHz)

VCC = 3.3V

35003100

20

RF-TO-IF ISOLATION (dB)

10

3800360034003200

3000 4000

RF FREQUENCY (MHz)

3800360034003200

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

MAX19999 toc65

-20

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50
2700 3900

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

VCC = 3.3V

35003100

20

RF-TO-IF ISOLATION (dB)

10

3000 4000

-10

MAX19999 toc66

-20

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50
2700 3900

3800360034003200

RF FREQUENCY (MHz)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

MAX19999 toc67

VCC = 3.0V, 3.3V, 3.6V

35003100

LO FREQUENCY (MHz)

Typical Operating Characteristics (continued)

(

Typical Application Circuit,

VCC= +3.3V, LO is low-side injected for a 350MHz IF, PLO= 0dBm, PRF= -5dBm, TC=+25°C, unless

otherwise noted.)

MAX19999

Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer

14 ______________________________________________________________________________________

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10
VCC = 3.3V

2LO LEAKAGE AT RF PORT vs.

LO FREQUENCY

-10
VCC = 3.3V

2LO LEAKAGE AT RF PORT vs.

LO FREQUENCY

-10

-20

TC = -30°C, +25°C, +85°C

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50

2700 3900

LO FREQUENCY (MHz)

0

5

10

15

20

RF PORT RETURN LOSS (dB)

25

30

3000 4000

MAX19999 toc68

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

35003100

-50
2700 3100 3500 3900

RF PORT RETURN LOSS vs.

RF FREQUENCY

VCC = 3.3V fIF = 350MHz

PLO = -3dBm, 0dBm, +3dBm

34003200 3600 3800

RF FREQUENCY (MHz)

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

MAX19999 toc71

MAX19999 toc69

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
2700 3100 3500 3900

IF PORT RETURN LOSS vs.

IF FREQUENCY

0

5

10

15

20

IF PORT RETURN LOSS (dB)

25

30

50 500

VCC = 3.0V, 3.3V, 3.6V

230140 320 410

IF FREQUENCY (MHz)

fLO = 3200MHz

MAX19999 toc70

VCC = 3.0V, 3.3V, 3.6V

LO FREQUENCY (MHz)

MAX19999 toc72

LO PORT RETURN LOSS vs.

LO FREQUENCY

0

VCC = 3.3V

5

10

15

LO PORT RETURN LOSS (dB)

20

25

2650 31502900 3400 3650

PLO = -3dBm

PLO = +3dBm

LO FREQUENCY (MHz)

PLO = 0dBm

MAX19999 toc73

300

290

280

270

260

SUPPLY CURRENT (mA)

250

240

-35 5 25-15 45 65 85

SUPPLY CURRENT vs.

TEMPERATURE (T

VCC = 3.6V

VCC = 3.0V

TEMPERATURE (°C)

C

VCC = 3.3V

)

MAX19999 toc74

MAX19999

Dual, SiGe High-Linearity, 3000MHz to

4000MHz Downconversion Mixer with LO Buffer

______________________________________________________________________________________ 15

Detailed Description

The MAX19999 provides high linearity and low noise fig­ure for a multitude of 3000MHz to 4000MHz WiMAX and
LTE base-station applications. This device operates over
an LO range of 2650MHz to 3700MHz and an IF range of
50MHz to 500MHz. Integrated baluns and matching cir­cuitry allow 50Ω single-ended interfaces to the RF and
LO ports. The integrated LO buffer provides a high drive
level to the mixer core, reducing the LO drive required at
the MAX19999’s input to a range of -3dBm to +3dBm.
The IF port incorporates a differential output, which is
ideal for providing enhanced 2RF-2LO performance.

RF Input and Balun

The MAX19999’s two RF inputs (RFMAIN and RFDIV)
provide a 50Ω match when combined with a series DC­blocking capacitor. This DC-blocking capacitor is

required because the input is internally DC shorted to
ground through each channel’s on-chip balun. When
using a 1.5pF DC-blocking capacitor, the RF port input
return loss is typically 15dB over the RF frequency
range of 3200MHz to 3900MHz.

LO Input, Buffer, and Balun

A two-stage internal LO buffer allows a wide input
power range for the LO drive. All guaranteed specifica­tions are for an LO signal power from -3dBm to +3dBm.
The on-chip low-loss balun, along with an LO buffer,
drives the double-balanced mixer. All interfacing and
matching components from the LO input to the IF out­puts are integrated on chip.

High-Linearity Mixer

The core of the MAX19999 is a pair of double-bal­anced, high-performance passive mixers. Exceptional

Pin Description

PIN NAME FUNCTION

1 RFMAIN Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.

2, 5, 6, 8, 12, 15,

18, 23, 28, 31, 34

3, 7, 20, 22, 24,

25, 26, 27

4, 10, 16, 21,

30, 36

9 RFDIV

11 IFD_SET

13, 14 IFD+, IFD-

17 LO_ADJ_D

19 LO

29 LO_ADJ_M

32, 33 IFM-, IFM+

35 IFM_SET

—EP

GND Ground. Not internally connected. Ground these pins or leave unconnected.

GND

V

CC

Ground. Internally connected to the exposed pad (EP). Connect all ground pins and the exposed
pad together.

Power Supply. Connect bypass capacitors as close as possible to the pin (see the Typical
Application Circuit).

Diversity Channel RF Input. This input is internally matched to 50Ω. Requires a DC-blocking
capacitor.

IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias
current for the diversity IF amplifier.

Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
(see the Typical Application Circuit).

LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias
current for the diversity LO amplifier.

Local Oscillator Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.

LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current
for the main LO amplifier.

Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
(see the Typical Application Circuit).

IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the main IF amplifier.

Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses
multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These
multiple via grounds are also required to achieve the noted RF performance

CC

CC

MAX19999

Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer

16 ______________________________________________________________________________________

linearity is provided by the large LO swing from the on­chip LO buffer. When combined with the integrated IF
amplifiers, the cascaded IIP3, 2RF-2LO rejection, and
NF performance is typically +24dBm, 74dBc, and

10.5dB, respectively, for low-side LO injection architec­tures covering the 3000MHz to 4000MHz RF band.

Differential IF Output Amplifier

The MAX19999 mixers have an IF frequency range of
50MHz to 500MHz. The differential, open-collector IF
output ports require external pullup inductors to VCC.
These pullup inductors are also used to resonate out
the parasitic shunt capacitance of the IC, PCB compo­nents, and PCB to provide an optimized IF match at the
frequency of interest. Note that differential IF outputs
are ideal for providing enhanced 2RF-2LO rejection
performance. Single-ended IF applications require a
4:1 balun to transform the 200Ω differential output
impedance to a 50Ω single-ended output. After the
balun, the IF return loss is typically 18dB.

Applications Information

Input and Output Matching

The RF and LO inputs are internally matched to 50Ω. No
matching components are required for RF frequencies
ranging from 3000MHz to 4000MHz. RF and LO inputs
require only DC-blocking capacitors for interfacing.

The IF output impedance is 200Ω (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance down to a 50Ω single­ended output (see the

Typical Application Circuit

).

Reduced-Power Mode

Each channel of the MAX19999 has two pins (LO_ADJ,
IF_SET) that allow external resistors to set the internal
bias currents. Nominal values for these resistors are
given in Table 1. Larger valued resistors can be used to
reduce power dissipation at the expense of some per­formance loss. If ±1% resistors are not readily avail­able, ±5% resistors can be substituted.

Significant reductions in power consumption can also
be realized by operating the mixer with an optional sup­ply voltage of 3.3V. Doing so reduces the overall power
consumption by up to 53%. See the

+3.3V Supply AC

Electrical Characteristics

table and the relevant +3.3V

curves in the

Typical Operating Characteristics

section

to evaluate the power vs. performance trade-offs.

Layout Considerations

A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
For the best performance, route the ground pin traces
directly to the exposed pad under the package.

The PCB exposed pad MUST be connected to the
ground plane of the PCB. It is suggested that multiple
vias be used to connect this pad to the lower level
ground planes. This method provides a good RF/ther­mal-conduction path for the device. Solder the exposed
pad on the bottom of the device package to the PCB.
The MAX19999 evaluation kit can be used as a refer­ence for board layout. Gerber files are available upon
request at www.maxim-ic.com.

Power-Supply Bypassing

Proper voltage-supply bypassing is essential for high­frequency circuit stability. Bypass each VCCpin with
the capacitors shown in the

Typical Application Circuit

.

Exposed Pad RF/Thermal Considerations

The exposed pad (EP) of the MAX19999’s 36-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which the
MAX19999 is mounted be designed to conduct heat
from the exposed pad. In addition, provide the exposed
pad with a low-inductance path to electrical ground.
The exposed pad MUST be soldered to a ground plane
on the PCB, either directly or through an array of plated
via holes.

MAX19999

Dual, SiGe High-Linearity, 3000MHz to

4000MHz Downconversion Mixer with LO Buffer

______________________________________________________________________________________ 17

Table 1. Application Circuit Component Values

*

Use 390nH (0805) inductors for an IF frequency of 200MHz. Contact the factory for details.

DESIGNATION QTY DESCRIPTION SUPPLI ER

C1, C8, C14 3 1.5pF microwave capacitors (0402) Murata Electronics North America, Inc.

C4, C9, C13,

C15, C17, C18

C10, C11, C12,

C19, C20, C21

L1–L4 4 120nH wire-wound high-Q inductors* (0805) Coilcraft, Inc.

R1, R4 2

R2, R5 2

6 0.01µF microwa ve capacitors (0402) Murata Electronics North America, Inc.

6 82pF microwa ve capacitors (0603) Murata Electronics North America, Inc.

750 ±1% resistor (0402). Use for VCC = +5.0V applications.
Larger values can be used to reduce power at the expense
of some performance loss. See the T ypical Operating

Characteristics.

1.1k ±1% resistor (0402). Use for V
Larger values can be used to reduce power at the expense
of some performance loss. See the T ypical Operating
Characteristics.

698 ±1% resistor (0402). Use for VCC = +5.0V applications.
Larger values can be used to reduce power at the expense
of some performance loss. See the T ypical Operating
Characteristics.

845 ±1% resistor (0402). Use for V
Larger values can be used to reduce power at the expense
of some performance loss. See the T ypical Operating

Characteristics.

= +3.3V applications.

CC

= +3.3V applications.

CC

Digi-Key Corp.

Digi-Key Corp.

Digi-Key Corp.

Digi-Key Corp.

0 resistors (1206). The se resi stors can be increased in

R3, R6 2

T1, T2 2 4:1 IF balun TC4-1W-17+ Min i-Circu it s

U1 1 MAX19999 IC (36 TQFN-EP) Max im Integrated Products, Inc.

value to reduce power dissipation in the device but will
reduce the compression point. Full P
achieved using 0.

performance

1dB

Digi-Key Corp.

MAX19999

Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer

18 ______________________________________________________________________________________

Typical Application Circuit

C19

RF MAIN INPUT

C4

RF DIV INPUT

V

CC

R1

V

CC

C18

CC

V

GND

GND

V

GND

GND

GND

GND

RFDIV

V

CC

+

1

2

3

CC

4

5

6

7

8

9

CC

V

R4

C1

RFMAIN

V

CC

C8

C9

36

10

IFM_SET

35

11

IFD_SET

GND

GND

IFM-

IFM+

34

GND

32

33

MAX19999

EXPOSED

14

13

12

IFD-

IFD+

GND

L1*

CC

V

CC

V

30

16

C21

L2*

C20

LO_ADJ_M

29

17

LO_ADJ_D

R2

GND

28

18

GND

R5

R3

31

PAD

15

T1

4:1

V

CC

GND

27

GND

26

GND

25

GND

24

GND

23

GND

22

V

CC

21

GND

20

LO

19

V

CC

C17

IF MAIN OUTPUT

V

CC

C14

C15

LO

C13

C11

T2

IF DIV OUTPUT

4:1

*USE 390nH (0805) INDUCTORS FOR AN IF FREQUENCY
OF 200MHz. CONTACT THE FACTORY FOR DETAILS.

V

CC

L4*

R6

C12

L3*

C10

MAX19999

Dual, SiGe High-Linearity, 3000MHz to 4000MHz

Downconversion Mixer with LO Buffer

Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.

Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________

19

© 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.

Pin Configuration/Functional Diagram

Chip Information

PROCESS: SiGe BiCMOS

Package Information

For the latest package outline information and land patterns, go
to www.maxim-ic.com/packages

.

PACKAGE TYPE PACKAGE CODE DOCUMENT NO.

36 Thin QFN-EP T3666+2

21-0141

TOP VIEW

CC

IFM_SET

RFMAIN

GND

GND

V

GND

GND

GND

GND

RFDIV

V

36

+

1

2

3

4

CC

5

6

7

8

9

10

CC

V

35

11

IFD_SET

GND

34

12

GND

IFM+

33

13

IFD+

THIN QFN-EP

(6mm x 6mm)

EXPOSED PAD ON THE BOTTOM OF THE PACKAGE.

GND

31

MAX19999

EXPOSED

PAD

15

GND

V

CC

V

30

16

CC

LO_ADJ_M

GND

29

28

17

18

GND

LO_ADJ_D

27

GND

26

GND

25

GND

24

GND

23

GND

22

GND

21

V

CC

20

GND

19

LO

IFM-

32

14

IFD-