Rainbow Electronics MAX19996 User Manual

General Description

The MAX19996 single, high-linearity downconversion
mixer provides 8.7dB conversion gain, +24.5dBm IIP3,
and 9.6dB noise figure for 2000MHz to 3000MHz WCS,
LTE, WiMAX™, and MMDS wireless infrastructure appli­cations. With an 1800MHz to 2550MHz LO frequency
range, this particular mixer is ideal for low-side LO
injection receiver architectures. High-side LO injection
is supported by the MAX19996A, which is pin-for-pin
and functionally compatible with the MAX19996.

In addition to offering excellent linearity and noise perfor­mance, the MAX19996 also yields a high level of compo­nent integration. This device includes a double-balanced
passive mixer core, an IF amplifier, and an LO buffer.
On-chip baluns are also integrated to allow for single­ended RF and LO inputs. The MAX19996 requires a
nominal LO drive of 0dBm, and supply current is typical­ly 230mA at V

CC

= +5.0V or 149.5mA at VCC= +3.3V.

The MAX19996 is pin compatible with the MAX19996A
2300MHz to 3900MHz mixer. The device is also pin sim­ilar with the MAX9984/MAX9986 400MHz to 1000MHz
mixers and the MAX9993/MAX9994/MAX9996 1700MHz
to 2200MHz mixers, making this entire family of down­converters ideal for applications where a common PCB
layout is used for multiple frequency bands.

The MAX19996 is available in a compact 5mm x 5mm,
20-pin thin QFN lead-free package with an exposed
pad. Electrical performance is guaranteed over the
extended -40°C to +85°C temperature range.

Applications

2.3GHz WCS Base Stations

2.5GHz WiMAX and LTE Base Stations

2.7GHz MMDS Base Stations

Fixed Broadband Wireless Access

Wireless Local Loop

Private Mobile Radios

Military Systems

Features

♦ 2000MHz to 3000MHz RF Frequency Range

♦ 1800MHz to 2550MHz LO Frequency Range

♦ 50MHz to 500MHz IF Frequency Range

♦ 8.7dB Typical Conversion Gain

♦ 9.6dB Typical Noise Figure

♦ +24.5dBm Typical Input IP3

♦ +11dBm Typical Input 1dB Compression Point

♦ 69dBc Typical 2RF-2LO Spurious Rejection at

P

RF

= -10dBm

♦ Integrated LO Buffer

♦ Integrated RF and LO Baluns for Single-Ended

Inputs

♦ Low -3dBm to +3dBm LO Drive

♦ Pin Compatible with the MAX19996A 2300MHz to

3900MHz Mixer

♦ Pin Similar with the MAX9993/MAX9994/

MAX9996 1700MHz to 2200MHz Mixers and
MAX9984/MAX9986 400MHz to 1000MHz Mixers

♦ Single +5.0V or +3.3V Supply

♦ External Current-Setting Resistors Provide Option

for Operating Device in Reduced-Power/Reduced­Performance Mode

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz

Downconversion Mixer with LO Buffer

________________________________________________________________

Maxim Integrated Products

1

Ordering Information

19-4177; Rev 0; 7/08

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.

PART TEMP RANGE PIN-PACKAGE

MAX19996ETP+ -40°C to +85°C 20 Thin QFN-EP*

MAX19996ETP+T -40°C to +85°C 20 Thin QFN-EP*

+

Denotes a lead-free/RoHS-compliant package.

*

EP = Exposed pad.

T = Tape and reel.

Pin Configuration appears at end of data sheet.

WiMAX is a trademark of WiMAX Forum.

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= +3.0V to +3.6V, no input AC signals. TC= -40°C to +85°C, unless otherwise noted. Typical values

are at V

CC

= +3.3V, TC= +25°C, parameters are guaranteed by design and not production tested, unless otherwise noted.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

VCCto GND...........................................................-0.3V to +5.5V

IF+, IF-, LOBIAS, LO, IFBIAS,

LEXT to GND ..........................................-0.3V to (V

CC

+ 0.3V)

RF, LO Input Power ........................................................+12dBm

RF, LO Current

(RF and LO is DC shorted to GND through a balun) ......50mA

Continuous Power Dissipation (Note 1) ..............................5.0W

θ

JA

(Notes 2, 3)..............................................................+38°C/W

θ

JC

(Notes 1, 3)................................................................13°C/W

Operating Case Temperature

Range (Note 4)........................................T

C

= -40°C to +85°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= +4.75V to +5.25V, no input AC signals. TC= -40°C to +85°C, unless otherwise noted. Typical val-

ues are at V

CC

= +5.0V, TC= +25°C, all parameters are production tested.) (Note 6)

RECOMMENDED AC OPERATING CONDITIONS

Note 1: Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed

pad is known while the device is soldered down to a PCB. See the

Applications Information

section for details. The junction

temperature must not exceed +150°C.

Note 2: Junction temperature T

J

= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is

known. The junction temperature must not exceed +150°C.

Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-

layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial

.

Note 4: T

C

is the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.

Supply Voltage V

Supply Current I

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

CC

CC

4.75 5 5.25 V

230 245 mA

Supply Voltage V

Supply Current I

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

CC

CC

Total supply current, VCC = +3.3V 149.5 mA

3.0 3.3 3.6 V

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

RF Frequency f

LO Frequency f

IF Frequency f

LO Drive Level P

RF

LO

IF

LO

(Note 7) 2000 3000 MHz

(Note 7) 1800 2550 MHz

U si ng M i ni - C i r cui ts TC 4- 1W- 17 4:1 tr ansfor m er
as d efi ned i n the Typ i cal Ap p l i cati on C i r cui t, IF
m atchi ng com p onents affect the IF fr eq uency
r ang e ( N ote 7)

U si ng al ter nati ve M i ni - C i r cui ts TC 4- 1W- 7A
4:1 transformer, IF matching components
affect the IF frequency range (Note 7)

100 500

50 250

-3 +3 dBm

MHz

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 3

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO= -3dBm to +3dBm,

P

RF

= -5dBm, fRF= 2300MHz to 2800MHz, fLO= 2000MHz to 2500MHz, fIF= 300MHz, fRF> fLO, TC= -40°C to +85°C. Typical val-

ues are at V

CC

= +5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2500MHz, fLO= 2200MHz, fIF= 300MHz, TC= +25°C, all parameters are

guaranteed by design and characterization, unless otherwise noted.) (Note 6)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Conversion Power Gain G

Conversion Power Gain Variation
vs. Frequency

Conversion Power Gain
Temperature Coefficient

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

Third-Order Input Intercept Point
Variation Over Temperature

Noise Figure NF

Noise Figure Temperature
Coefficient

Noise Figure Under Blocking
Condition

2RF-2LO Spur Rejection 2 x 2

3RF-3LO Spur Rejection 3 x 3

RF Input Return Loss

LO Input Return Loss

TC = +25°C (Note 5) 8.1 8.7 9.3 dB

C

∆G

TC

1dB

fRF = 2300MHz to 2800MHz for any

C

100MHz band

TC = -40°C to +85°C -0.012 dB/°C

G

0.1 dB

TC = +25°C (Note 8) 10 11 dBm

fRF = 2500MHz, TC = +25°C (Note 8) 10.4 11 dBm

f

- f

RF1

T

f

RF

f

RF1

T

C

C

= 1MHz, P

RF2

= +25°C (Note 5)

= 2300MHz to 2800MHz, fIF = 300MHz,

- f

= 1MHz, P

RF2

= -40°C to +85°C

RF1

RF1

= P

= P

= -5dBm,

RF2

= -5dBm,

RF2

22 24.5 dBm

±0.5 dB

fRF = 2300MHz to 2700MHz, fIF = 300MHz,
single sideband, no blockers present
(Note 9)

SSB

f

= 2500M H z, f

R F

V

= +5.0V, TC = +25°C, single sideband,

CC

= 300M H z, P

I F

= 0d Bm ,

L O

9.6 12

9.6 10.5

no blockers present (Note 9)

fRF = 2000MHz to 3000MHz, single

TC

NF

sideband, no blockers present,

NF

T

= -40°C to +85°C (Note 9)

C

+8dBm blocker tone applied to RF port, f
= 2300MHz, fLO = 2110MHz, f

B

2400MHz, P
T

= +25°C (Note 9)

C

= 2300MHz to

f

RF

2700MHz, f

= -3dBm, VCC = +5.0V,

LO

=

LO

2000MHz to 2400MHz,
f

= f

SPUR

= 2300MHz to

f

RF

2700MHz, f

+ 150MHz

LO

LO

=
2000MHz to 2400MHz,
f

= f

SPUR

+ 100MHz

LO

LO on and IF terminated into a matched
impedance

RF and IF terminated into a matched
impedance

0.0183 dB/°C

RF

BLOCKER

=

20.8 25 dB

PRF = -10dBm 60 69

= -5dBm

P

RF

(Note 5)

55 64

PRF = -10dBm 70 78

= -5dBm

P

RF

(Note 5)

60 68

18 dB

20 dB

dB

dBc

dBc

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer

4 _______________________________________________________________________________________

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit

, VCC= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO= -3dBm to +3dBm,

P

RF

= -5dBm, fRF= 2300MHz to 2800MHz, fLO= 2000MHz to 2500MHz, fIF= 300MHz, fRF> fLO, TC= -40°C to +85°C. Typical val-

ues are at V

CC

= +5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2500MHz, fLO= 2200MHz, fIF= 300MHz, TC= +25°C, all parameters are

guaranteed by design and characterization, unless otherwise noted.) (Note 6)

+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, RF and LO ports are driven from 50Ω sources, Typical values are at VCC= +3.3V, PRF= -5dBm,

P

LO

= 0dBm, fRF= 2500MHz, fLO= 2200MHz, fIF= 300MHz, TC= +25°C, unless otherwise noted.) (Note 6)

IF Output Impedance Z

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Nominal differential impedance at the IC’s

IF

IF outputs

200 Ω

IF Output Return Loss

Minimum RF-to-IF Isolation

Maximum LO Leakage at RF Port fLO = 1900MHz to 2500MHz, PLO = +3dBm -22.7 dBm

M axi m um 2LO Leakag e at RF P or tf

Maximum LO Leakage at IF Port

RF terminated into 50Ω,
LO driven by 50Ω
source, IF transformed
to 50Ω using external
components shown in
the Typical Application
Circuit. See the IF Port
Return Loss vs. IF
Frequency graph in the

Typical Operating
Characteristics for

performance vs.
inductor values

f

= 2300MHz to 2700MHz, PLO = +3dBm

RF

(Note 5)

= 1900MHz to 2500MHz, P

LO

f

= 1900MHz to 2500MHz, P

LO

(Note 5)

fIF = 450MHz,
L1 = L2 = 120nH

fIF = 350MHz,
L1 = L2 = 270nH

= 300MHz,

f

IF

L1 = L2 = 470nH

= +3dBm -21 dBm

LO

= +3dBm

LO

25

25

25

34 dB

-27.5 dBm

Conversion Power Gain G

Conversion Power Gain Variation
vs. Frequency

Gain Variation Over Temperature TC

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

Third-Order Input Intercept
Variation Over Temperature

Noise Figure NF

Noise Figure Temperature
Coefficient

2RF-2LO Spur Rejection 2 x 2

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

8.6 dB

0.1 dB

19.8 dBm

±0.5 dB

0.017 dB/°C

∆G

TC

C

C

G

1dB

SSB

NF

fRF = 2300MHz to 2800MHz for any
100MHz band

TC = -40°C to +85°C -0.012 dB/°C

(Note 8) 7.5 dBm

f

= 2500MHz, f

RF1

2200MHz, P

f

= 2500M H z, f

RF1

2200M H z, P

S i ng l e si d eb and , no b l ocker s p r esent ( N ote 9) 9.6 dB

Single sideband, no blockers present,
T

= -40°C to +85°C (Note 9)

C

PRF = -10dBm 65.9

= -5dBm 60.9

P

RF

RF1

RF1

= 2501MHz, fLO =

RF2

= P

= -5dBm

RF2

= 2501M H z, fLO =

RF2

= P

= - 5d Bm , T

RF2

= + 25°C

C

dB

dBc

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 5

Note 5: 100% production tested for functional performance.
Note 6: All limits reflect losses of external components, including a 0.8dB loss at f

IF

= 300MHz due to the 4:1 impedance trans-

former. Output measurements were taken at IF outputs of the

Typical Application Circuit

.

Note 7: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See

the

Typical Operating Characteristics

.

Note 8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Note 9: Measured with external LO source noise filtered so that the noise floor is -174dBm/Hz. This specification reflects the

effects of all SNR degradations in the mixer including the LO noise, as defined in Application Note 2021:

Specifications

and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers

.

+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit

, RF and LO ports are driven from 50Ω sources, Typical values are at VCC= +3.3V, PRF= -5dBm,

P

LO

= 0dBm, fRF= 2500MHz, fLO= 2200MHz, fIF= 300MHz, TC= +25°C, unless otherwise noted.) (Note 6)

3RF-3LO Spur Rejection 3 x 3

RF Input Return Loss

LO Input Return Loss

IF Output Impedance Z

IF Output Return Loss

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

P

= -10dBm 67.9

RF

= -5dBm 57.9

P

RF

LO on and IF terminated into a matched
impedance

RF and IF terminated into a matched
impedance

Nominal differential impedance at the IC’s

IF

IF outputs

RF ter m i nated i nto 50Ω ,
LO d r i ven b y 50Ω sour ce,
IF tr ansfor m ed to 50Ω
usi ng exter nal
com p onents show n i n the

Typ i cal Ap p l i cati on
C i r cui t. S ee the IF P or t
Retur n Loss vs. IF

Fr eq uency g r ap h i n the

Typ i cal Op er ati ng
C har acter i sti cs for

p er for m ance vs. i nd uctor
val ues.

fIF = 450MHz,
L1 = L2 = 120nH

fIF = 350MHz,
L1 = L2 = 270nH

f

= 300MHz,

IF

L1 = L2 = 470nH

dBc

16 dB

16.7 dB

200 Ω

23

23

23

dB

Minimum RF-to-IF Isolation fRF = 2300MHz to 2700MHz, PLO = +3dBm 33 dB

Maximum LO Leakage at RF Port fLO = 1900MHz to 2500MHz, PLO = +3dBm -26.6 dBm

M axi m um 2LO Leakag e at RF P or tf

Maximum LO Leakage at IF Port fLO = 1900MHz to 2500MHz, PLO = +3dBm -21.9 dBm

= 1900MHz to 2500MHz, PLO = +3dBm -28.8 dBm

LO

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer

6 _______________________________________________________________________________________

Typical Operating Characteristics

(

Typical Application Circuit

, VCC= +5.0V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected for a 300MHz IF, TC = +25°C, unless

otherwise noted.)

CONVERSION GAIN vs. RF FREQUENCY

11

10

9

8

CONVERSION GAIN (dB)

7

6

2000 2200 2400 2600 2800 3000

TC = -40°C

TC = +85°C

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

28

27

26

25

INPUT IP3 (dBm)

24

23

TC = +85°C

TC = -40°C

TC = +25°C

PRF = -5dBm/TONE

TC = +25°C

11

MAX19996 toc01

10

9

8

CONVERSION GAIN (dB)

7

6

28

27

MAX19996 toc04

26

25

INPUT IP3 (dBm)

24

23

CONVERSION GAIN vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

PRF = -5dBm/TONE

PLO = -3dBm, 0dBm, +3dBm

11

MAX19996 toc02

10

9

8

CONVERSION GAIN (dB)

7

6

28

27

MAX19996 toc05

26

25

INPUT IP3 (dBm)

24

23

CONVERSION GAIN vs. RF FREQUENCY

MAX19996 toc03

VCC = 4.75V, 5.0V, 5.25V

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

PRF = -5dBm/TONE

MAX19996 toc06

VCC = 4.75V, 5.0V, 5.25V

MAX19996 toc08

NOISE FIGURE (dB)

22

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

VCC = 4.75V, 5.0V, 5.25V

8

7

1800 2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

22

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

12

TC = +85°C

11

10

9

NOISE FIGURE (dB)

8

TC = -40°C

7

1800 2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

TC = +25°C

MAX19996 toc07

NOISE FIGURE (dB)

22

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

8

7

1800 2000 2200 2400 2600 2800 3000

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

MAX19996 toc09

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +5.0V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected for a 300MHz IF, TC = +25°C, unless

otherwise noted.)

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________

7

2RF-2LO RESPONSE vs. RF FREQUENCY

85

75

65

2RF-2LO RESPONSE (dBc)

55

45

2000 2200 2400 2600 2800 3000

TC = +85°C

TC = -40°C

RF FREQUENCY (MHz)

TC = +25°C

3RF-3LO RESPONSE vs. RF FREQUENCY

85

80

75

2RF-2LO RESPONSE vs. RF FREQUENCY

85

75

65

2RF-2LO RESPONSE (dBc)

55

45

2000 2200 2400 2600 2800 3000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

PRF = -5dBm

3RF-3LO RESPONSE vs. RF FREQUENCY

85

80

75

PRF = -5dBm

PRF = -5dBm

PRF = -5dBm

TC = -40°C

2RF-2LO RESPONSE vs. RF FREQUENCY

85

MAX19996 toc10

75

65

2RF-2LO RESPONSE (dBc)

55

45

2000 2200 2400 2600 2800 3000

3RF-3LO RESPONSE vs. RF FREQUENCY

85

80

MAX19996 toc13

75

PLO = -3dBm

RF FREQUENCY (MHz)

PRF = -5dBm

PLO = +3dBm

PLO = 0dBm

PRF = -5dBm

MAX19996 toc11

MAX19996 toc14

MAX19996 toc12

MAX19996 toc15

70

65

3RF-3LO RESPONSE (dBc)

TC = +25°C

60

55

2000 2200 2400 2600 2800 3000

INPUT P

14

13

12

(dBm)

1dB

11

INPUT P

10

TC = -40°C

9

8

2000 2200 2400 2600 2800 3000

TC = +85°C

RF FREQUENCY (MHz)

vs. RF FREQUENCY

1dB

TC = +85°C

TC = +25°C

RF FREQUENCY (MHz)

70

65

3RF-3LO RESPONSE (dBc)

60

55

2000 2200 2400 2600 2800 3000

14

13

MAX19996 toc16

12

(dBm)

1dB

11

INPUT P

10

9

8

2000 2200 2400 2600 2800 3000

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

INPUT P

vs. RF FREQUENCY

1dB

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

70

65

3RF-3LO RESPONSE (dBc)

60

55

2000 2200 2400 2600 2800 3000

14

13

MAX19996 toc17

12

(dBm)

1dB

11

INPUT P

10

9

8

2000 2200 2400 2600 2800 3000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

INPUT P

1dB

VCC = 4.75V

RF FREQUENCY (MHz)

vs. RF FREQUENCY

VCC = 5.25V

VCC = 5.0V

MAX19996 toc18

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer

8 _______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +5.0V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected for a 300MHz IF, TC = +25°C, unless

otherwise noted.)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

LO FREQUENCY (MHz)

LO LEAKAGE AT IF PORT (dBm)

MAX19996 toc19

1700 1900 2100 2300 2500 2700

-40

-30

-20

-10

0

TC = +85°C

TC = +25°C

TC = -40°C

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

LO FREQUENCY (MHz)

LO LEAKAGE AT IF PORT (dBm)

MAX19996 toc20

1700 1900 2100 2300 2500 2700

-40

-30

-20

-10

0

PLO = -3dBm, 0dBm, +3dBm

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

LO FREQUENCY (MHz)

LO LEAKAGE AT IF PORT (dBm)

MAX19996 toc21

1700 1900 2100 2300 2500 2700

-40

-30

-20

-10

0

VCC = 4.75V, 5.0V, 5.25V

RF-TO-IF ISOLATION vs. RF FREQUENCY

RF FREQUENCY (MHz)

RF-TO-IF ISOLATION (dB)

MAX19996 toc22

2000 2200 2400 2600 2800 3000

10

20

30

40

50

60

70

TC = -40°C

TC = +25°C

TC = +85°C

RF-TO-IF ISOLATION vs. RF FREQUENCY

RF FREQUENCY (MHz)

RF-TO-IF ISOLATION (dB)

MAX19996 toc23

2000 2200 2400 2600 2800 3000

10

20

30

40

50

60

70

PLO = -3dBm, 0dBm, +3dBm

RF-TO-IF ISOLATION vs. RF FREQUENCY

RF FREQUENCY (MHz)

RF-TO-IF ISOLATION (dB)

MAX19996 toc24

2000 2200 2400 2600 2800 3000

10

20

30

40

50

60

70

VCC = 4.75V

VCC = 5.0V

VCC = 5.25V

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

LO FREQUENCY (MHz)

LO LEAKAGE AT RF PORT (dBm)

MAX19996 toc25

1600 1800 2000 2200 2400 2600 2800 3000

-40

-35

-30

-25

-20

-15

-10

TC = -40°C, +25°C, +85°C

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

LO FREQUENCY (MHz)

LO LEAKAGE AT RF PORT (dBm)

MAX19996 toc26

1600 1800 2000 2200 2400 2600 2800 3000

-40

-35

-30

-25

-20

-15

-10

PLO = -3dBm, 0dBm, +3dBm

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

LO FREQUENCY (MHz)

LO LEAKAGE AT RF PORT (dBm)

MAX19996 toc27

1600 1800 2000 2200 2400 2600 2800 3000

-40

-35

-30

-25

-20

-15

-10

VCC = 4.75V

VCC = 5.0V, 5.25V

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________

9

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +5.0V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected for a 300MHz IF, TC = +25°C, unless

otherwise noted.)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

10

20

PLO = -3dBm, 0dBm, +3dBm

30

RF PORT RETURN LOSS (dB)

40

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

SUPPLY CURRENT

vs. TEMPERATURE (T

250

IF PORT RETURN LOSS

vs. IF FREQUENCY

0

5

MAX19996 toc28

10

15

20

IF PORT RETURN LOSS (dB)

25

30

50 140 230 320 410 500

L1, L2 = 270nH

L1, L2 = 470nH

VCC = 4.75V, 5.0V, 5.25V

fLO = 2400MHz

L1, L2 = 120nH

IF FREQUENCY (MHz)

MAX19996 toc29

LO SELECTED RETURN LOSS (dB)

LO LEAKAGE AT IF PORT

)

C

0

vs. LO FREQUENCY

LO SELECTED RETURN LOSS

vs. LO FREQUENCY

0

10

PLO = 0dBm

20

30

40

1600 1800 2000 2200 2400 2600 2800 3000

PLO = +3dBm

PLO = -3dBm

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

70

MAX9996 toc30

240

230

220

SUPPLY CURRENT (mA)

210

200

VCC = 5.25V

VCC = 5.0V

VCC = 4.75V

-40 -15 10 35 60 85
TEMPERATURE (°C)

MAX19996 toc31

-10

-20

-30

LO LEAKAGE AT IF PORT (dBm)

-40
1700 1900 2100 2300 2500 2700

L3 = 0Ω

L3 = 4.7nH

LO FREQUENCY (MHz)

60

MAX19996 toc32

50

40

30

RF-TO-IF ISOLATION (dB)

20

10

2000 2200 2400 2600 2800 3000

MAX19996 toc33

L3 = 4.7nH

L3 = 0Ω

RF FREQUENCY (MHz)

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer

10 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +3.3V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected for a 300MHz IF, TC = +25°C, unless

otherwise noted.)

CONVERSION GAIN
vs. RF FREQUENCY

11

10

TC = -40°C

9

CONVERSION GAIN
vs. RF FREQUENCY

VCC = 3.3V

TC = +25°C

MAX19996 toc34

CONVERSION GAIN
vs. RF FREQUENCY

MAX19996 toc35

11

10

9

11

10

9

VCC = 3.3V

MAX19996 toc36

8

CONVERSION GAIN (dB)

7

6

2000 2200 2400 2600 2800 3000

TC = +85°C

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

22

PRF = -5dBm/TONE

21

TC = +25°C

20

19

INPUT IP3 (dBm)

18

17

16

2000 2200 2400 2600 2800 3000

TC = +85°C

TC = -40°C

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

12

11

10

TC = +85°C

TC = +25°C

VCC = 3.3V

VCC = 3.3V

CONVERSION GAIN (dB)

22

21

MAX19996 toc37

20

19

INPUT IP3 (dBm)

18

17

16

12

MAX19996 toc40

11

10

8

7

6

2000 2200 2400 2600 2800 3000

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

PRF = -5dBm/TONE

PLO = -3dBm, 0dBm, +3dBm

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

VCC = 3.3V

NOISE FIGURE vs. RF FREQUENCY

VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

CONVERSION GAIN (dB)

22

21

MAX19996 toc38

20

19

INPUT IP3 (dBm)

18

17

16

12

MAX19996 toc41

11

10

8

VCC = 3.0V, 3.3V, 3.6V

7

6

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

PRF = -5dBm/TONE

MAX19996 toc39

VCC = 3.0V, 3.3V, 3.6V

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

MAX19996 toc42

VCC = 3.0V, 3.3V, 3.6V

9

NOISE FIGURE (dB)

8

TC = -40°C

7

1800 2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

9

NOISE FIGURE (dB)

8

7

1800 2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

9

NOISE FIGURE (dB)

8

7

1800 2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

11

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +3.3V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected for a 300MHz IF, TC = +25°C, unless

otherwise noted.)

2RF-2LO RESPONSE vs. RF FREQUENCY

85

75

65

2RF-2LO RESPONSE (dBc)

55

45

2000 2200 2400 2600 2800 3000

TC = +85°C

TC = +25°C

RF FREQUENCY (MHz)

3RF-3LO RESPONSE vs. RF FREQUENCY

70

65

TC = +25°C

60

TC = +85°C

TC = -40°C

PRF = -5dBm

VCC = 3.3V

PRF = -5dBm

VCC = 3.3V

85

MAX19996 toc43

75

65

2RF-2LO RESPONSE (dBc)

55

45

2000 2200 2400 2600 2800 3000

70

65

MAX19996 toc46

60

2RF-2LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

VCC = 3.3V

PLO = +3dBm

PLO = -3dBm

PLO = 0dBm

RF FREQUENCY (MHz)

3RF-3LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

VCC = 3.3V

MAX19996 toc44

MAX19996 toc47

2RF-2LO RESPONSE vs. RF FREQUENCY

85

75

65

2RF-2LO RESPONSE (dBc)

55

45

2000 2200 2400 2600 2800 3000

VCC = 3.0V, 3.3V, 3.6V

RF FREQUENCY (MHz)

PRF = -5dBm

3RF-3LO RESPONSE vs. RF FREQUENCY

70

65

60

PRF = -5dBm

MAX19996 toc45

MAX19996 toc48

55

50

3RF-3LO RESPONSE (dBc)

(dBm)

1dB

INPUT P

TC = -40°C

45

40

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

INPUT P

10

9

8

7

6

5

2000 2200 2400 2600 2800 3000

vs. RF FREQUENCY

1dB

TC = +85°C

TC = -40°C

RF FREQUENCY (MHz)

TC = +25°C

VCC = 3.3V

55

50

3RF-3LO RESPONSE (dBc)

45

40

2000 2200 2400 2600 2800 3000

10

MAX19996 toc49

9

8

(dBm)

1dB

7

INPUT P

6

5

2000 2200 2400 2600 2800 3000

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

INPUT P

vs. RF FREQUENCY

1dB

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

VCC = 3.3V

55

50

3RF-3LO RESPONSE (dBc)

45

40

2000 2200 2400 2600 2800 3000

10

MAX19996 toc50

9

8

(dBm)

1dB

7

INPUT P

6

5

2000 2200 2400 2600 2800 3000

VCC = 3.0V, 3.3V, 3.6V

RF FREQUENCY (MHz)

INPUT P

1dB

VCC = 3.0V

RF FREQUENCY (MHz)

vs. RF FREQUENCY

VCC = 3.6V

VCC = 3.3V

MAX19996 toc51

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer

12 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +3.3V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected for a 300MHz IF, TC = +25°C, unless

otherwise noted.)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

0

-10

-20

TC = +25°C

VCC = 3.3V

TC = -40°C

MAX19996 toc52

-10

-20

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

0

PLO = -3dBm, 0dBm, +3dBm

VCC = 3.3V

MAX19996 toc53

0

-10

-20

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

MAX19996 toc54

VCC = 3.0V, 3.3V, 3.6V

-30

LO LEAKAGE AT IF PORT (dBm)

TC = +85°C

-40
1700 1900 2100 2300 2500 2700

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION vs. RF FREQUENCY

60

TC = +85°C

50

40

RF-TO-IF ISOLATION (dB)

30

20

TC = +25°C

TC = -40°C

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20

-25

TC = -40°C, +25°C, +85°C

VCC = 3.3V

VCC = 3.3V

-30

LO LEAKAGE AT IF PORT (dBm)

-40
1700 1900 2100 2300 2500 2700

RF-TO-IF ISOLATION vs. RF FREQUENCY

60

MAX19996 toc55

50

40

RF-TO-IF ISOLATION (dB)

30

20

2000 2200 2400 2600 2800 3000

-20

MAX19996 toc58

-25

LO FREQUENCY (MHz)

VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.3V

-30

LO LEAKAGE AT IF PORT (dBm)

-40
1700 1900 2100 2300 2500 2700

RF-TO-IF ISOLATION vs. RF FREQUENCY

60

MAX19996 toc56

50

40

RF-TO-IF ISOLATION (dB)

30

20

2000 2200 2400 2600 2800 3000

-20

VCC = 3.6V

MAX19996 toc59

-25

LO FREQUENCY (MHz)

VCC = 3.0V, 3.3V, 3.6V

RF FREQUENCY (MHz)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.3V

MAX19996 toc57

MAX19996 toc60

-30

-35

LO LEAKAGE AT RF PORT (dBm)

-40
1600 1800 2000 2200 2400 2600 2800 3000

LO FREQUENCY (MHz)

-30

-35

LO LEAKAGE AT RF PORT (dBm)

-40
1600 1800 2000 2200 2400 2600 2800 3000

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

-30

VCC = 3.0V

-35

LO LEAKAGE AT RF PORT (dBm)

-40
1600 1800 2000 2200 2400 2600 2800 3000

LO FREQUENCY (MHz)

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

13

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +3.3V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected for a 300MHz IF, TC = +25°C, unless

otherwise noted.)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

5

10

15

20

RF PORT RETURN LOSS (dB)

25

30

2000 2200 2400 2600 2800 3000

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

SUPPLY CURRENT

vs. TEMPERATURE (T

160

VCC = 3.6V

155

150

145

SUPPLY CURRENT (mA)

140

VCC = 3.3V

LO RETURN LOSS

vs. LO FREQUENCY

PLO = 0dBm

LO FREQUENCY (MHz)

vs. RF FREQUENCY

PRF = -5dBm/TONE

L3 = 4.7nH

PLO = +3dBm

VCC = 3.3V

PLO = -3dBm

INPUT IP3

VCC = 3.3V

VCC = 3.3V

C

VCC = 3.0V

IF PORT RETURN LOSS

vs. IF FREQUENCY

0

MAX19996 toc61

5

10

15

20

IF PORT RETURN LOSS (dB)

25

30

50 140 230 320 410 500

VCC = 3.0V, 3.3V, 3.6V

fLO = 2400MHz

MAX19996 toc62

L1, L2 = 120nH

L1, L2 = 270nH

L1, L2 = 470nH

IF FREQUENCY (MHz)

0

10

20

LO RETURN LOSS (dB)

30

40

1600 1800 2000 2200 2400 2600 2800 3000

CONVERSION GAIN

)

11

MAX19996 toc64

10

9

8

CONVERSION GAIN (dB)

7

vs. RF FREQUENCY

L3 = 0Ω, 4.7nH

VCC = 3.3V

MAX19996 toc65

22

21

20

19

INPUT IP3 (dBm)

18

17

MAX19996 toc63

MAX19996 toc66

135

-40 -15 10 35 60 85
TEMPERATURE (°C)

6

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

16

2000 2200 2400 2600 2800 3000

RF FREQUENCY (MHz)

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer

14 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, VCC= +3.3V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected for a 300MHz IF, TC = +25°C, unless

otherwise noted.)

75

70

65

60

55

2RF-2LO RESPONSE (dBc)

-10

-20

-30

LO LEAKAGE AT IF PORT (dBm)

-40

L3 = 4.7nH

50

45

2000 2200 2400 2600 2800 3000

0

1700 1900 2100 2300 2500 2700

2RF-2LO RESPONSE

vs. RF FREQUENCY

L3 = 0Ω

RF FREQUENCY (MHz)

PRF = -5dBm
VCC = 3.3V

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

L3 = 0Ω

L3 = 4.7nH

LO FREQUENCY (MHz)

VCC = 3.3V

MAX19996 toc67

MAX19996 toc69

3RF-3LO RESPONSE

vs. RF FREQUENCY

75

70

65

60

55

3RF-3LO RESPONSE (dBc)

50

45

2000 2200 2400 2600 2800 3000

L3 = 0Ω

L3 = 4.7nH

RF FREQUENCY (MHz)

PRF = -5dBm
VCC = 3.3V

RF-TO-IF ISOLATION

vs. RF FREQUENCY

60

50

40

30

RF-TO-IF ISOLATION (dB)

20

10

2000 2200 2400 2600 2800 3000

L3 = 4.7nH

L3 = 0Ω

RF FREQENCY (MHz)

MAX19996 toc68

VCC = 3.3V

MAX19996 toc70

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________ 15

Pin Description

PIN NAME FUNCTION

1, 6, 8, 14 V

2RF

3, 4, 5, 10,

12, 13, 17

7 LOBIAS

9, 15 N.C. Not internally connected. Pins can be grounded.

11 LO

16 LEXT

18, 19 IF-, IF+

20 IFBIAS

—EP

CC

GND

Power Supply. Bypass to GND with 0.01µF capacitors as close as possible to the pin.

Single-Ended 50Ω RF Input. Internally matched and DC shorted to GND through a balun. Requires
an input DC-blocking capacitor.

Ground. Internally connected to the exposed pad. Connect all ground pins and the exposed pad
(EP) together.

LO Amplifier Bias Control. Output bias resistor for the LO buffer. Connect a 604Ω 1% resistor
(230mA bias condition) from LOBIAS to ground.

Local Oscillator Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.

External Inductor Connection. Connect an inductor from this pin to ground to increase the RF-to-IF
and LO-to-IF isolation (see the Typical Operating Characteristics for typical performance vs. inductor
value).

Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
Typical Application Circuit).

IF Amplifier Bias Control. IF bias resistor connection for the IF amplifier. Connect a 698Ω 1% resistor
(230mA bias condition) from IFBIAS to GND.

Exposed Pad. Internally connected to GND. Connect to a large ground plane using multiple vias to
maximize thermal and RF performance.

(see the

CC

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer

16 ______________________________________________________________________________________

Detailed Description

The MAX19996 high-linearity downconversion mixer
provides 8.7dB of conversion gain and +24.5dBm of
IIP3, with a typical 9.6dB noise figure. The integrated
baluns and matching circuitry allow for 50Ω single­ended interfaces to the RF and the LO port. The inte­grated LO buffer provides a high drive level to the
mixer core, reducing the LO drive required at the
MAX19996’s input to a -3dBm to +3dBm range. The IF
port incorporates a differential output, which is ideal for
providing enhanced 2RF-2LO performance.

Specifications are guaranteed over broad frequency
ranges to allow for use in WCS, LTE, WiMAX, and
MMDS base stations. The MAX19996 is specified to
operate over an RF input range of 2000MHz to
3000MHz, an LO range of 1800MHz to 2550MHz, and
an IF range of 50MHz to 500MHz. The external IF com­ponents set the lower frequency range (see the

Typical

Operating Characteristics

for details). Operation

beyond these ranges is possible (see the

Typical

Operating Characteristics

for additional information).
Although this device is optimized for low-side LO injec­tion applications, it can operate in high-side LO injec­tion modes as well. However, performance degrades
as f

LO

continues to increase. For increased high-side

LO performance, refer to the MAX19996A data sheet.

RF Port and Balun

The MAX19996 RF input provides a 50Ω match when
combined with a series 8.2pF DC-blocking capacitor.
This DC-blocking capacitor is required as the input is
internally DC shorted to ground through the on-chip
balun. The RF port input return loss is typically 15dB
over the RF frequency range of 2300MHz to 2800MHz.

LO Inputs, Buffer, and Balun

The MAX19996 is optimized for low-side LO injection
applications with an 1800MHz to 2550MHz LO frequen­cy range. The LO input is internally matched to 50Ω,
requiring only a 2pF DC-blocking capacitor. A two­stage internal LO buffer allows for a -3dBm to +3dBm
LO input power range. The on-chip low-loss balun,
along with an LO buffer, drives the double-balanced
mixer. All interfacing and matching components from
the LO inputs to the IF outputs are integrated on-chip.

High-Linearity Mixer

The core of the MAX19996 is a double-balanced, high­performance passive mixer. Exceptional linearity is pro­vided by the large LO swing from the on-chip LO
buffer. When combined with the integrated IF ampli­fiers, the performance of IIP3, 2RF-2LO rejection, and
noise-figure is typically +24.5dBm, 69dBc, and 9.6dB,
respectively.

Differential IF Output Amplifier

The MAX19996 has an IF frequency range of 50MHz to
500MHz, where the low-end frequency depends on the
frequency response of the external IF components. The
MAX19996 mixer is tuned for a 450MHz IF using 120nH
external pullup bias inductors. Lower IFs of 350MHz
and 300MHz require higher inductor values of 270nH
and 470nH, respectively. The differential, open-collec­tor IF output ports require these inductors to be con­nected to V

CC

.

Note that these differential ports are ideal for providing
enhanced 2RF-2LO performance. Single-ended IF
applications require a 4:1 (impedance ratio) balun to
transform the 200Ω differential IF impedance to a 50Ω
single-ended system. Use the TC4-1W-17 4:1 trans­former for IF frequencies above 200MHz and the
TC4-1W-7A 4:1 transformer for frequencies below
200MHz. The user can use a differential IF amplifier or
SAW filter on the mixer IF port, but a DC block is
required on both IF+/IF- ports to keep external DC from
entering the IF ports of the mixer.

Applications Information

Input and Output Matching

The RF and LO ports are designed to operate in a
50Ω system. Use DC blocks at the RF and LO inputs to
isolate the ports from external DC while providing some
reactive tuning. The IF output impedance is 200Ω (dif-
ferential). For evaluation, an external low-loss 4:1
(impedance-ratio) balun transforms this impedance
down to a 50Ω single-ended output (see the

Typical

Application Circuit

).

Externally Adjustable Bias

Bias currents for the LO buffer and the IF amplifier are
optimized by fine-tuning resistors R1 and R2. The val­ues for R1 and R2, as listed in Table 1, represent the
nominal values which yield the highest level of linearity
performance. Larger value resistors can be used to
reduce power dissipation at the expense of some per­formance loss. Contact the factory for details concern­ing recommended power reduction vs. performance
tradeoffs. If ±1% resistors are not readily available,
±5% resistors can be substituted.

Significant reductions in power consumption can also be
realized by operating the mixer with an optional supply
voltage of +3.3V. Doing so reduces the overall power
consumption by up to 57%. See the

+3.3V Supply AC

Electrical Characteristics

table and the relevant +3.3V

curves in the

Typical Operating Characteristics

section

to evaluate the power vs. performance tradeoffs.

MAX19996

LEXT Inductor

Short LEXT to ground using a 0Ω resistor. For applica­tions requiring improved RF-to-IF and LO-to-IF isolation,
a 4.7nH low-ESR inductor can be connected from LEXT
to GND. However, the load impedance presented to the
mixer must be such that any capacitances from IF- and
IF+ to ground do not exceed several picofarads to
ensure stable operating conditions. Since approximate­ly 120mA flows through LEXT, it is important to use a
low-DCR wire-wound inductor.

Layout Considerations

A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be
such that any capacitance from both IF- and IF+ to
ground does not exceed several picofarads. For the best
performance, route the ground pin traces directly to the
exposed pad under the package. The PCB exposed pad
MUST be connected to the ground plane of the PCB. It is
suggested that multiple vias be used to connect this pad

to the lower-level ground planes. This method provides a
good RF/thermal-conduction path for the device. Solder
the exposed pad on the bottom of the device package to
the PCB. The MAX19996 evaluation kit can be used as a
reference for board layout. Gerber files are available
upon request at www.maxim-ic.com.

Power-Supply Bypassing

Proper voltage-supply bypassing is essential for high­frequency circuit stability. Bypass each VCCpin with
the capacitors shown in the

Typical Application Circuit

and see Table 1.

Exposed Pad RF/Thermal Considerations

The exposed pad (EP) of the MAX19996’s 20-pin thin
QFN package provides a low thermal-resistance path
to the die. It is important that the PCB on which the
MAX19996 is mounted be designed to conduct heat
from the EP. In addition, provide the EP with a low­inductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly
or through an array of plated via holes.

Table 1. Component Values

*

Use 470nH inductors and TC4-1W-7A 4:1 balun for IF frequencies below 200MHz.

SiGe High-Linearity, 2000MHz to 3000MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________ 17

DESIGNATION QTY DESCRIPTION COMPONENT SUPPLIER

C1 1 8.2pF microwave capacitor (0402) Murata Electronics North America, Inc.

C2, C6, C8, C11 4 0.01µF microwave capacitors (0402) Murata Electronics North America, Inc.

C3, C9 0 Not installed, capacitors —

C10 1 2pF microwave capacitor (0402) Murata Electronics North America, Inc.

C13, C14 2 1000pF microwave capacitors (0402) Murata Electronics North America, Inc.

C15 1 82pF microwave capacitor (0402) Murata Electronics North America, Inc.

L1, L2 2

L3 1 4.7nH wire-wound high-Q inductor (0603) Coilcraft, Inc.

R1 1

R2 1

R3 1 0Ω resistor (1206) Digi-Key Corp.

T1 1 4:1 IF balun TC4-1W-17* Mini-Circuits

U1 1 MAX19996 IC (20 TQFN) Maxim Integrated Products, Inc.

120nH wire-wound high-Q inductors* (0805)
(see the Typical Operating Characteristics)

698Ω ± 1% r esi stor ( 0402) . U se for V

1.1kΩ ± 1% r esi stor ( 0402) . U se for V

604Ω ± 1% r esi stor ( 0402) . U se for V

845Ω ± 1% r esi stor ( 0402) . U se for V

= +5 .0 V ap p l i cati ons.

C C

= +3 .3 V ap p l i cati ons.

C C

= +5 .0 V ap p l i cati ons.

C C

= +3 .3 V ap p l i cati ons.

C C

Coilcraft, Inc.

Digi-Key Corp.

Digi-Key Corp.

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz
Downconversion Mixer with LO Buffer

18 ______________________________________________________________________________________

Typical Application Circuit

R3

C3 C2

RF

INPUT

C13

C14

+5.0V

C1

V

GND

GND

GND

IF-

C15

GND

MAX19996

326

T1

14

4:1

LEXT

16

IF
OUTPUT

L3

N.C.

15

V

CC

14

GND

13

GND

12

C10

LO

11

C11

+5.0V

LO
INPUT

L1

L2

R1

IF+

IFBIAS

1920 18 17

CC

1

RF

2

3

4

EP

5

+5.0V

768

LOBIAS

CC

V

C8

C9

N.C.

+5.0V

CC

V

C6

R2

10

9

GND

NOTE: PINS 3, 4, 5, 10, 12, 13, AND 17 ARE ALL INTERNAL LY
CONNECTED TO THE EXPOSED GROUND PAD. CONNECT
THESE PINS TO GROUND TO IMPROVE ISOLATION.

PINS 9 AND 15 HAVE NO INTERNAL CONNECTION BUT CAN BE
EXTERNALLY GROUNDED TO IMPROVE ISOLATION.

MAX19996

SiGe High-Linearity, 2000MHz to 3000MHz

Downconversion Mixer with LO Buffer

Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.

Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________

19

© 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.

Package Information

For the latest package outline information and land patterns, go
to www.maxim-ic.com/packages

.

PACKAGE TYPE PACKAGE CODE DOCUMENT NO.

20 Thin QFN-EP T2055-3

21-0140

MAX19996

TOP VIEW

1920 18 17

768

RF

GND

GND

9

V

CC

1

2

4

5

15

14

12

11

LOBIAS

V

CC

N.C.

GND

GND

3

13

16

10

V

CC

V

CC

GND

GND

LO

N.C.

IF+

IF-

GND

LEXT

IFBIAS

EP

Pin Configuration

Chip Information

PROCESS: SiGe BiCMOS