Rainbow Electronics MAX19995 User Manual

General Description

The MAX19995 dual-channel downconverter provides
up to 9dB of conversion gain, +24.8dBm input IP3,
+13.3dBm 1dB input compression point, and a noise
figure as low as 9dB for 1700MHz to 2200MHz diversity
receiver applications. With an optimized LO frequency
range of 1400MHz to 2000MHz, this mixer is ideal for
low-side LO injection architectures. High-side LO injec­tion is supported by the MAX19995A, which is pin-pin
and functionally compatible with the MAX19995.

In addition to offering excellent linearity and noise per­formance, the MAX19995 also yields a high level of
component integration. This device includes two dou­ble-balanced passive mixer cores, two LO buffers, a
dual-input LO selectable switch, and a pair of differen­tial IF output amplifiers. Integrated on-chip baluns allow
for single-ended RF and LO inputs.

The MAX19995 requires a nominal LO drive of 0dBm
and a typical supply current of 297mA at V

CC

= 5.0V or

212mA at V

CC

= 3.3V.

The MAX19995/MAX19995A are pin compatible with
the MAX19985/MAX19985A series of 700MHz to
1000MHz mixers and pin similar with the MAX19997A/
MAX19999 series of 1800MHz to 4000MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used
across multiple frequency bands.

The MAX19995 is available in a 6mm x 6mm, 36-pin
thin QFN package with an exposed pad. Electrical per­formance is guaranteed over the extended temperature
range, from TC= -40°C to +85°C.

Applications

UMTS/WCDMA/LTE Base Stations

cdma2000®Base Stations

DCS1800 and EDGE Base Stations

PCS1900 and EDGE Base Stations

PHS/PAS Base Stations

Fixed Broadband Wireless Access

Wireless Local Loop

Private Mobile Radios

Military Systems

Features

o 1700MHz to 2200MHz RF Frequency Range

o 1400MHz to 2000MHz LO Frequency Range

o 1750MHz to 2700MHz LO Frequency Range

(MAX19995A)

o 50MHz to 500MHz IF Frequency Range

o 9dB Typical Conversion Gain

o 9dB Typical Noise Figure

o +24.8dBm Typical Input IP3

o +13.3dBm Typical Input 1dB Compression Point

o 79dBc Typical 2RF-2LO Spurious Rejection at

P

RF

= -10dBm

o Dual Channels Ideal for Diversity Receiver

Applications

o 49dB Typical Channel-to-Channel Isolation

o Low -3dBm to +3dBm LO Drive

o Integrated LO Buffer

o Internal RF and LO Baluns for Single-Ended

Inputs

o Built-In SPDT LO Switch with 56dB LO-to-LO

Isolation and 50ns Switching Time

o Pin Compatible with the MAX19985/MAX19985A/

MAX19995A Series of 700MHz to 2200MHz Mixers

o Pin Similar to the MAX19997A/MAX19999 Series

of 1800MHz to 4000MHz Mixers

o Single +5.0V or +3.3V Supply

o External Current-Setting Resistors Provide Option

for Operating Device in Reduced-Power/Reduced­Performance Mode

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

________________________________________________________________

Maxim Integrated Products

1

Ordering Information

19-4253; Rev 0; 12/08

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.

cdma2000 is a trademark of Telecommunications Industry
Association.

PART

PIN-PACKAGE

MAX19995ETX+

36 Thin QFN-EP*

36 Thin QFN-EP*

Pin Configuration and Typical Application Circuit appear at
end of data sheet.

+

Denotes a lead(Pb)-free/RoHS-compliant package.

*

EP = Exposed pad.

T = Tape and reel.

TEMP RANGE

-40°C to +85°C

MAX19995ETX+T -40°C to +85°C

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

optimized for the DCS/PCS band, VCC= +4.75V to +5.25V, TC= -40°C to +85°C. R1 = R4 = 806Ω, R2 =

R5 = 2.32kΩ. Typical values are at V

CC

= +5.0V, TC= +25°C, unless otherwise noted. All parameters are production tested.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

Note 1: Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed

pad is known while the device is soldered down to a PCB. See the

Applications Information

section for details. The junction

temperature must not exceed +150°C.

Note 2: Junction temperature T

J

= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is

known. The junction temperature must not exceed +150°C.

Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-

layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.

Note 4: TCis the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.

V

CC

to GND...........................................................-0.3V to +5.5V

LO1, LO2 to GND ...............................................................±0.3V

Any Other Pins to GND...............................-0.3V to (V

CC

+ 0.3V)

RFMAIN, RFDIV, and LO_ Input Power ..........................+15dBm

RFMAIN, RFDIV Current (RF is DC shorted to GND

through a balun)...............................................................50mA

Continuous Power Dissipation (Note 1) ...............................8.7W

θ

JA

(Notes 2, 3)..............................................................+38°C/W

θ

JC

(Notes 1, 3)...............................................................7.4°C/W

Operating Case Temperature Range

(Note 4).............................................................-40°C to +85°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= +3.0V to +3.6V, TC= -40°C to +85°C, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ. Typical values are at

V

CC

= +3.3V, TC= +25°C, unless otherwise noted. All parameters are guaranteed by design and not production tested.)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Supply Voltage V

Supply Current I

LOSEL Input High Voltage V

LOSEL Input Low Voltage V

LOSEL Input Current IIH and I

CC

CC

Total supply current, VCC = +5.0V 297 370 mA

IH

IL

IL

4.75 5 5.25 V

2V

0.8 V

-10 +10 µA

Supply Voltage V

Supply Current I

LOSEL Input High Voltage V

LOSEL Input Low Voltage V

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

CC

CC

Total supply current, VCC = +3.3V 212 mA

IH

IL

3.0 3.3 3.6 V

2V

0.8 V

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

_______________________________________________________________________________________ 3

RECOMMENDED AC OPERATING CONDITIONS

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC= +4.75V to +5.25V, RF and

LO ports are driven from 50Ω sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 1700MHz to 2000MHz, fLO= 1510MHz to

1810MHz, f

IF

= 190MHz, fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC= +5.0V, PRF= -5dBm, PLO= 0dBm,

fRF= 1800MHz, f

LO

= 1610MHz, fIF= 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

RF Frequency fRF (Note 5) 1700 2200 MHz

LO Frequency fLO (Note 5) 1400 2000 MHz

Using Mini-Circuit s TC4-1W-17 4:1
transformer as defined in the typical
application circuit, IF matching components

IF Frequency f

LO Drive Le vel PLO -3 +3 dBm

IF

affect the IF frequency range (Note 5)

Using alternative Mini-Circuits TC4-1W-7A
4:1 tran sformer, IF matching component s
affect the IF frequency range (Note 5)

100 500 MHz

50 250 MHz

Conversion Gain G

Conversion Gain Flatness

Gain Variation Over Temperature TC

Input Compression Point
(Note 7)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

7911

TC = +25°C 7.8 9 10.2

C

Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =

1.5kΩ), f

Flatness over any one of three frequency
bands:
fRF = 1710MHz to 1785MHz

= 1850MHz to 1910MHz

f

RF

f

= 1920MHz to 1980MHz

RF

fRF = 1700MHz to 2000MHz,
f

CG

IP

1dB

LO

= 190MHz, TC = -40°C to +85°C

f

IF

f

RF

Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =

1.5kΩ), f
f

= 1950MHz

RF

= 1760MHz, fRF = 1950MHz

LO

= 1510MHz to 1810MHz ,

= 1700MHz for min value 9.5 12.5

= 1760MHz, fIF = 190MHz,

LO

8.9

±0.1 dB

-0.009 dB/°C

13.3

dB

dBm

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

4 _______________________________________________________________________________________

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit

optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC= +4.75V to +5.25V, RF and

LO ports are driven from 50Ω sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 1700MHz to 2000MHz, fLO= 1510MHz to

1810MHz, f

IF

= 190MHz, fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC= +5.0V, PRF= -5dBm, PLO= 0dBm,

fRF= 1800MHz, f

LO

= 1610MHz, fIF= 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Input Intercept Point IIP3

Input Intercept Variation Over
Temperature

f

- f

= 1MHz, PRF = -5dBm per tone,

RF2

= 2000MHz for min value

- f

RF1

RF2

RF2

= 1MHz,

= -5dBm per tone, TC = +25°C to

= 1760MHz, fIF = 190MHz,

LO

= 1950MHz, f

= -5dBm per tone

- f

= 1MHz, PRF = -5dBm per tone,

RF2

= -40°C to +85°C

RF1

- f

= 1MHz,

20.5 23.7

21.5 23.7

24.8

0.0035 dBm/°C

911

TC

RF1

f

RF

fIF = 190MHz, fLO = 1810MHz, fRF =
2000MHz for min value, f
P

RF

+85°C

Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =

1.5kΩ), f
f

RF

P

RF

f

IIP3

RF1

T

C

Single sideband, no blockers present
(Note 8)

dBm

Noise Figure NF

Noise Figure Temperature
Coefficient

Noise Figure with Blocker NF

TC

SSB

NF

B

fLO = 1610MHz, fIF = 190MHz,
f

= 1800MHz, TC = +25°C, PLO = 0dBm,

RF

single sideband, no blockers present
(Note 8)

Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω , R2 = R5 =

1.5kΩ), f
f

RF

blockers present

Single sideband, no blockers present,
T

C

f

BLOCKER

+8dBm, f
P

LO

(Notes 8, 9)

= 190MHz, fLO = 1760MHz,

IF

= 1950MHz, single sideband, no

= -40°C to +85°C

= 1900MHz, P

= 1800MHz, fLO = 1610MHz,

RF

= 0dBm, VCC = +5.0V, TC = +25°C

BLOCKER

=

9 9.6

dB

9.3

0.016 dB/°C

19 20.5 dB

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

_______________________________________________________________________________________ 5

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit

optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC= +4.75V to +5.25V, RF and

LO ports are driven from 50Ω sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 1700MHz to 2000MHz, fLO= 1510MHz to

1810MHz, f

IF

= 190MHz, fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC= +5.0V, PRF= -5dBm, PLO= 0dBm,

fRF= 1800MHz, f

LO

= 1610MHz, fIF= 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)

2RF-2LO Spur Rejection 2 x 2

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

fRF = 1800MHz, fLO = 1610MHz,
P

= -10dBm (Note 8)

RF

fRF = 1800MHz, fLO = 1610MHz,
P

= -5dBm (Note 8)

RF

fRF = 1800MHz, fLO = 1610MHz,
P

= 0dBm, PRF = -10dBm,

LO

= +5.0V, TC = +25°C (Note 8)

V

CC

fRF = 1800MHz, fLO = 1610MHz,

= 0dBm, PRF = -5dBm, VCC = +5.0V,

P

LO

T

= +25°C (Note 8)

C

Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =

1.5kΩ), f
f

RF

Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =

1.5kΩ), f
f

RF

fRF = 1800MHz, f
P

RF

fRF = 1800MHz, f
P

RF

fRF = 1800MHz, f
P

LO

V

CC

= 190MHz, fLO = 1760MHz,

IF

= 1950MHz, PRF = -10dBm

= 190MHz, fLO = 1760MHz,

IF

= 1950MHz, PRF = -5dBm

= 1610MHz,

= -10dBm (Note 8)

= -5dBm (Note 8)

= 0dBm, P

= +5.0V, TC = +25oC (Note 8)

LO

= 1610MHz,

LO

= 1610MHz,

LO

= -10dBm,

RF

54 79

49 74

56 79

51 74

79

74

77 91

67 81

79 91

dBc

3RF-3LO Spur Rejection 3 x 3

fRF = 1800MHz, fLO = 1600MHz,

= 0dBm, P

P

LO

= +25°C (Note 8)

T

C

Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =

1.5kΩ), f
f

Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =

1.5kΩ), f
f

IF

= 1950MHz, PRF = -10dBm

RF

IF

= 1950MHz, PRF = -5dBm

RF

= -5dBm, VCC = +5.0V,

RF

= 190MHz, fLO = 1760MHz,

= 190MHz, f

= 1760MHz,

LO

69 81

86

76

dBc

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

6 _______________________________________________________________________________________

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit

optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC= +4.75V to +5.25V, RF and

LO ports are driven from 50Ω sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 1700MHz to 2000MHz, fLO= 1510MHz to

1810MHz, f

IF

= 190MHz, fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC= +5.0V, PRF= -5dBm, PLO= 0dBm,

fRF= 1800MHz, f

LO

= 1610MHz, fIF= 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)

+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

. Typical values are at VCC= +3.3V, PRF= -5dBm, PLO= 0dBm, fRF= 1800MHz, fLO= 1610MHz,

f

IF

= 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)

RF Input Return Loss

LO Input Return Loss

IF Output Impedance Z

IF Return Loss

RF-to-IF Isolation fRF = 1700MHz for min value 30 39 dB

LO Leakage at RF Port (Notes 8, 10) -31 -24.7 dBm

2LO Leakage at RF Port (Note 8) -20 -16 dBm

LO Leakage at IF Port (Note 8) -40 -27 dBm

Channel Isolation

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

LO and IF terminated into matched
impedance, LO on

LO port selected, RF and IF terminated into
matched impedance

LO port unselected, RF and IF terminated
into matched impedance

Nominal differential impedance of the IC’s

IF

IF outputs

RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in Typical

Application Circuit

RFMAIN converted power measured at
IFD_, relative to IFM_, all unused ports
terminated to 50Ω

RFDIV converted power measured at IFM_,
relative to IFD_, all unused ports terminated
to 50Ω

40 49

40 49

21 dB

20

19

200 Ω

12.5 dB

dB

dB

LO-to-LO Isolation

LO Switching Time

= +3dBm, P

LO1

f

= 1610MHz, f

LO1

50% of LOSEL to IF settled within 2
degrees

= +3dBm,

LO2

= 1611MHz

LO2

40 56 dB

50 ns

P

Conversion Gain G

Conversion Gain Flatness

G ai n V ar i ati on Over Tem p er atur eTCCGTC = -40°C to +85°C -0.009 dB/°C

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

C

Flatness over any one of three frequency
bands:
fRF = 1710MHz to 1785MHz

= 1850MHz to 1910MHz

f

RF

f

= 1920MHz to 1980MHz

RF

8.4 dB

±0.1 dB

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

_______________________________________________________________________________________ 7

+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit

. Typical values are at VCC= +3.3V, PRF= -5dBm, PLO= 0dBm, fRF= 1800MHz, fLO= 1610MHz,

f

IF

= 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)

Note 5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See

the

Typical Operating Characteristics

.

Note 6: All limits reflect losses of external components, including a 0.65dB loss at f

IF

= 190MHz due to the 4:1 impedance trans-

former. Output measurements were taken at IF outputs of the

Typical Application Circuit

.

Note 7: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Note 8: Guaranteed by design and characterization.
Note 9: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of

all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021:

Specifications and

Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.

Note 10: Limited production testing.

Input Compression Point IP

Input Intercept Point IIP3 f

Input Intercept Variation Over
Temperature

Noise Figure NF

Noise Figure Temperature
Coefficient

2RF-2LO Spur Rejection 2 x 2

3RF-3LO Spur Rejection 3 x 3

RF Input Return Loss LO on and IF terminated 21 dB

LO Input Return Loss

IF Return Loss

RF-to-IF Isolation 42 dB

LO Leakage at RF Port -40 dBm

2LO Leakage at RF Port -29 dBm

LO Leakage at IF Port -43 dBm

Channel Isolation

LO-to-LO Isolation

LO Switching Time 50% of LO S E L to IF settl ed w i thi n 2 d eg r ees 50 ns

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

1dB

TC

TC

(Note 7) 8.9 dBm

- f

RF1

IIP3fRF1

Single sideband, no blockers present 9.0 dB

SSB

Single sideband, no blockers present,

NF

T

C

PRF = -10dBm 73

P

RF

PRF = -10dBm 70

P

RF

LO port selected, RF and IF terminated into
matched impedance

LO port unselected, RF and IF terminated
into matched impedance

RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in Typical
Application Circuit, f

RFMAIN converted power measured at
IFD_, relative to IFM_, all unused ports
terminated to 50Ω

RFDIV converted power measured at IFM_,
relative to IFD_, all unused ports terminated
to 50Ω

P

LO1

f

LO1

= 1MHz 18.5 dBm

RF2

- f

= 1MHz, TC = -40°C to +85°C 0.0034 dBm/°C

RF2

= -40°C to +85°C

= -5dBm 68

= -5dBm 60

= 190MHz

IF

= +3dBm, P

= 1610MHz, f

= +3dBm,

LO2

= 1611MHz

LO2

0.016 dB/°C

16

20

12.5 dB

49

49

55 dB

dBc

dBc

dB

dB

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

8 _______________________________________________________________________________________

Typical Operating Characteristics

(

Typical Application Circuit

, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

CONVERSION GAIN vs. RF FREQUENCY

11

10

9

8

CONVERSION GAIN (dB)

7

6

1700 2500

TC = -30°C

TC = +85°C

TC = +25°C

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

25

24

23

TC = -30°C

22

INPUT IP3 (dBm)

21

20

1700 2500

TC = +25°C

RF FREQUENCY (MHz)

230021001900

PRF = -5dBm/TONE

TC = +85°C

230021001900

11

MAX19995 toc01

10

9

8

CONVERSION GAIN (dB)

7

6

25

MAX19995 toc04

24

23

22

INPUT IP3 (dBm)

21

20

CONVERSION GAIN vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

1700 2500

RF FREQUENCY (MHz)

230021001900

INPUT IP3 vs. RF FREQUENCY

PRF = -5dBm/TONE

PLO = -3dBm

PLO = 0dBm

PLO = +3dBm

1700 2500

RF FREQUENCY (MHz)

230021001900

11

10

MAX19995 toc02

9

8

CONVERSION GAIN (dB)

7

6

1700 2500

25

MAX19995 toc05

24

23

22

INPUT IP3 (dBm)

21

20

1700 2500

CONVERSION GAIN vs. RF FREQUENCY

MAX19995 toc03

VCC = 4.75V, 5.0V, 5.25V

230021001900

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

PRF = -5dBm/TONE

MAX19995 toc06

VCC = 5.25V

VCC = 4.75V

VCC = 5.0V

230021001900

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

NOISE FIGURE (dB)

8

7

6

1700 2500

TC = +85°C

TC = +25°C

TC = -30°C

230021001900

RF FREQUENCY (MHz)

MAX19995 toc07

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

NOISE FIGURE (dB)

8

7

6

PLO = -3dBm, 0dBm, +3dBm

1700 2500

RF FREQUENCY (MHz)

230021001900

MAX19995 toc08

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

NOISE FIGURE (dB)

8

7

6

1700 2500

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

MAX19995 toc09

230021001900

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

_______________________________________________________________________________________

9

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

2RF-2LO RESPONSE vs. RF FREQUENCY

90

80

70

2RF-2LO RESPONSE (dBc)

60

50

1700 2500

TC = +85°C

TC = -30°C

RF FREQUENCY (MHz)

3RF-3LO RESPONSE vs. RF FREQUENCY

95

85

2RF-2LO RESPONSE vs. RF FREQUENCY

TC = +25°C

PRF = -5dBm

230021001900

90

MAX19995 toc10

80

70

2RF-2LO RESPONSE (dBc)

60

50

1700 2500

PLO = -3dBm

PLO = 0dBm

RF FREQUENCY (MHz)

PRF = -5dBm

PLO = +3dBm

230021001900

3RF-3LO RESPONSE vs. RF FREQUENCY

MAX19995 toc13

95

85

PRF = -5dBm

PRF = -5dBm

TC = +25°C

2RF-2LO RESPONSE vs. RF FREQUENCY

90

MAX19995 toc11

80

70

2RF-2LO RESPONSE (dBc)

60

50

1700 2500

3RF-3LO RESPONSE vs. RF FREQUENCY

95

MAX19995 toc14

85

PRF = -5dBm

MAX19995 toc12

VCC = 4.75V, 5.0V, 5.25V

230021001900

RF FREQUENCY (MHz)

PRF = -5dBm

MAX19995 toc15

VCC = 5.25V

TC = +85°C

75

3RF-3LO RESPONSE (dBc)

65

TC = -30°C

55

1700 2500

RF FREQUENCY (MHz)

INPUT P

15

14

13

(dBm)

1dB

12

INPUT P

11

TC = -30°C

10

1700 2500

vs. RF FREQUENCY

1dB

TC = +85°C

TC = +25°C

RF FREQUENCY (MHz)

230021001900

230021001900

75

3RF-3LO RESPONSE (dBc)

65

55

1700 2500

15

MAX19995 toc16

14

13

(dBm)

1dB

12

INPUT P

11

10

1700 2500

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

INPUT P

vs. RF FREQUENCY

1dB

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

75

3RF-3LO RESPONSE (dBc)

VCC = 4.75V

65

230021001900

55

1700 2500

INPUT P

15

MAX19995 toc17

14

VCC = 5.0V

13

(dBm)

1dB

12

INPUT P

11

230021001900

10

1700 2500

VCC = 5.0V

RF FREQUENCY (MHz)

vs. RF FREQUENCY

1dB

VCC = 5.25V

VCC = 4.75V

RF FREQUENCY (MHz)

230021001900

MAX19995 toc18

230021001900

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

10 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

CHANNEL ISOLATION vs. RF FREQUENCY

60

55

50

45

40

CHANNEL ISOLATION (dB)

35

30

1700 2500

-20

-25

-30

-35

-40

LO LEAKAGE AT IF PORT (dBm)

-45

TC = -30°C, +25°C, +85°C

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

TC = -30°C, +25°C, +85°C

CHANNEL ISOLATION vs. RF FREQUENCY

60

55

MAX19995 toc19

50

45

40

CHANNEL ISOLATION (dB)

35

230021001900

30

PLO = -3dBm, 0dBm, +3dBm

1700 2500

RF FREQUENCY (MHz)

230021001900

MAX19995 toc20

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-20

-25

MAX19995 toc22

-30

-35

-40

LO LEAKAGE AT IF PORT (dBm)

-45

PLO = -3dBm, 0dBm, +3dBm

MAX19995 toc23

CHANNEL ISOLATION vs. RF FREQUENCY

60

55

50

45

40

CHANNEL ISOLATION (dB)

35

30

VCC = 4.75V, 5.0V, 5.25V

1700 2500

RF FREQUENCY (MHz)

230021001900

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-20

-25

-30

-35

-40

LO LEAKAGE AT IF PORT (dBm)

-45

VCC = 5.25V

VCC = 5.0V

VCC = 4.75V

MAX19995 toc21

MAX19995 toc24

-50
1500 2300

LO FREQUENCY (MHz)

210019001700

RF-TO-IF ISOLATION vs. RF FREQUENCY

50

TC = -30°C, +25°C, +85°C

45

40

RF-TO-IF ISOLATION (dB)

35

30

1700 2500

RF FREQUENCY (MHz)

230021001900

-50
1500 2300

50

MAX19995 toc25

45

40

RF-TO-IF ISOLATION (dB)

35

30

1700 2500

210019001700

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

230021001900

RF FREQUENCY (MHz)

-50

50

MAX19995 toc26

45

40

RF-TO-IF ISOLATION (dB)

35

30

1500 2300

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION vs. RF FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

1700 2500

RF FREQUENCY (MHz)

210019001700

MAX19995 toc27

230021001900

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________

11

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20

-30

-40

-50

LO LEAKAGE AT RF PORT (dBm)

-60

-70
1400 2400

TC = -30°C, +25°C, +85°C

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-20

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20

MAX19995 toc28

-30

-40

-50

LO LEAKAGE AT RF PORT (dBm)

-60

-70

22001800 20001600

1400 2400

PLO = -3dBm, 0dBm, +3dBm

22001800 20001600

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

TC = -30°C

MAX19995 toc31

-20

-20

MAX19995 toc29

-30

-40

-50

LO LEAKAGE AT RF PORT (dBm)

-60

-70
1400 2400

-10

MAX19995 toc32

-20

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

MAX19995 toc30

VCC = 4.75V, 5.0V, 5.25V

22001800 20001600

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

MAX19995 toc33

-30

TC = +25°C

-40

-50

2LO LEAKAGE AT RF PORT (dBm)

-60
1400 2400

TC = +85°C

LO FREQUENCY (MHz)

LO SWITCH ISOLATION

vs. LO FREQUENCY

70

TC = -30°C

60

50

LO SWITCH ISOLATION (dB)

40

TC = +85°C

1400 2300

LO FREQUENCY (MHz)

TC = +25°C

2000 21501700 18501550

-30

-40

-50

2LO LEAKAGE AT RF PORT (dBm)

-60

22001800 20001600

1400 2400

PLO = -3dBm, 0dBm, +3dBm

22001800 20001600

LO FREQUENCY (MHz)

LO SWITCH ISOLATION

vs. LO FREQUENCY

70

MAX19995 toc34

60

50

LO SWITCH ISOLATION (dB)

40

1400 2300

P

= -3dBm, 0dBm, +3dBm

LO

2000 21501700 18501550

LO FREQUENCY (MHz)

-30

-40

-50

2LO LEAKAGE AT RF PORT (dBm)

-60
1400 2400

70

MAX19995 toc35

60

50

LO SWITCH ISOLATION (dB)

40

1400 2300

VCC = 4.75V, 5.0V, 5.25V

22001800 20001600

LO FREQUENCY (MHz)

LO SWITCH ISOLATION

vs. LO FREQUENCY

MAX19995 toc36

VCC = 4.75V, 5.0V, 5.25V

2000 21501700 18501550

LO FREQUENCY (MHz)

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

12 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

5

10

PLO = -3dBm, 0dBm, +3dBm

15

fIF = 190MHz

MAX19995 toc37

0

5

VCC = 4.75V, 5.0V, 5.25V

10

IF PORT RETURN LOSS

vs. IF FREQUENCY

fLO = 1610MHz

MAX19995 toc38

10

15

LO SELECTED RETURN LOSS

vs. LO FREQUENCY

0

5

PLO = +3dBm

PLO = 0dBm

MAX19995 toc39

20

RF PORT RETURN LOSS (dB)

25

30

1700 2500

RF FREQUENCY (MHz)

23001900 2100

LO UNSELECTED RETURN LOSS

vs. LO FREQUENCY

0

5

10

15

20

25

LO UN SELECTED RETURN LOSS (dB)

30

1400

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

25

24

PRF = -5dBm/TONE

IF PORT RETURN LOSS (dB)

15

20

50 500

IF FREQUENCY (MHz)

410140 230 320

SUPPLY CURRENT

340

vs. TEMPERATURE (T

VCC = 5.25V

MAX19995 toc40

320

300

SUPPLY CURRENT (mA)

280

VCC = 4.75V

2200 24001600 1800 2000

260

-35
TEMPERATURE (°C)

)

C

VCC = 5.0V

65 85-15 5 25 45

2RF-2LO RESPONSE vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

3.6nH

MAX19995 toc43

90

0

80

PRF = -5dBm

Ω

20

LO SELECTED RETURN LOSS (dB)

25

30

1400 2400

CONVERSION GAIN vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

11

MAX19995 toc41

10

9

8

CONVERSION GAIN (dB)

7

6

1700

3RF-3LO RESPONSE vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

95

MAX19995 toc44

85

PLO = -3dBm

LO FREQUENCY (MHz)

0Ω, 3.6nH, 6.8nH, 10nH

RF FREQUENCY (MHz)

0

Ω

3.6nH

22001600 1800 2000

MAX19995 toc42

25001900 2100 2300

PRF = -5dBm

MAX19995 toc45

23

0

22

INPUT IP3 (dBm)

21

20

1700

Ω

RF FREQUENCY (MHz)

6.8nH

10nH

25001900 2100 2300

70

2RF-2LO RESPONSE (dBc)

60

6.8nH, 10nH

50

1700

RF FREQUENCY (MHz)

3.6nH

25001900 2100 2300

75

3RF-3LO RESPONSE (dBc)

65

55

6.8nH

1700

RF FREQUENCY (MHz)

10nH

25001900 2100 2300

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________

13

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

CHANNEL ISOLATION vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

60

55

50

45

40

CHANNEL ISOLATION (dB)

35

30

1700

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

-20

0

6.8nH

Ω

10nH

3.6nH

25001900 2100 2300

MAX19995 toc46

-30

-40

6.8nH

-50

LO LEAKAGE AT IF PORT (dBm)

-60
1500

0

Ω

3.6nH

10nH

LO FREQUENCY (MHz)

MAX19995 toc47

23001700 1900 2100

RF-TO-IF ISOLATION vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

60

50

40

RF-TO-IF ISOLATION (dB)

30

3.6nH

20

1700

6.8nH

0

Ω

RF FREQUENCY (MHz)

MAX19995 toc48

10nH

25001900 2100 2300

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

14 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

CONVERSION GAIN vs. RF FREQUENCY

11

TC = -30°C

10

9

8

TC = +85°C

CONVERSION GAIN (dB)

7

6

1700 2500

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

26

25

24

23

INPUT IP3 (dBm)

22

21

TC = +25°C

TC = +25°C

230021001900

PRF = -5dBm/TONE

TC = +85°C

TC = -30°C

11

10

MAX19995 toc49

9

8

CONVERSION GAIN (dB)

7

6

1700 2500

26

25

MAX19995 toc52

24

23

INPUT IP3 (dBm)

22

21

CONVERSION GAIN vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

230021001900

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

PRF = -5dBm/TONE

PLO = -3dBm, 0dBm, +3dBm

11

MAX19995 toc50

10

9

8

CONVERSION GAIN (dB)

7

6

26

25

MAX19995 toc53

24

23

INPUT IP3 (dBm)

22

21

CONVERSION GAIN vs. RF FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

1700 2500

RF FREQUENCY (MHz)

230021001900

INPUT IP3 vs. RF FREQUENCY

PRF = -5dBm/TONE

VCC = 5.25V

VCC = 5.0V

VCC = 4.75V

MAX19995 toc51

MAX19995 toc54

MAX19995 toc56

NOISE FIGURE (dB)

20

1700 2500

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

8

7

6

1700 2500

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

20

1700 2500

RF FREQUENCY (MHz)

230021001900

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

NOISE FIGURE (dB)

8

7

6

1700 2500

TC = +85°C

TC = +25°C

TC = -30°C

230021001900

RF FREQUENCY (MHz)

MAX19995 toc55

NOISE FIGURE (dB)

20

1700 2500

RF FREQUENCY (MHz)

230021001900

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

8

7

6

PLO = -3dBm, 0dBm, +3dBm

1700 2500

RF FREQUENCY (MHz)

230021001900

230021001900

MAX19995 toc57

230021001900

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________

15

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

2RF-2LO RESPONSE vs. RF FREQUENCY

90

80

70

2RF-2LO RESPONSE (dBc)

60

50

1700 2500

TC = +85°C

TC = +25°C

RF FREQUENCY (MHz)

3RF-3LO RESPONSE vs. RF FREQUENCY

95

TC = +25°C

85

2RF-2LO RESPONSE vs. RF FREQUENCY

TC = -30°C

230021001900

PRF = -5dBm

90

MAX19995 toc58

80

70

2RF-2LO RESPONSE (dBc)

60

50

1700 2500

PLO = +3dBm

PLO = 0dBm

PLO = -3dBm

RF FREQUENCY (MHz)

PRF = -5dBm

230021001900

3RF-3LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

MAX19995 toc61

95

85

PRF = -5dBm

90

MAX19995 toc59

80

70

2RF-2LO RESPONSE (dBc)

60

50

1700 2500

95

MAX19995 toc62

85

2RF-2LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

VCC = 4.75V, 5.0V, 5.25V

230021001900

RF FREQUENCY (MHz)

3RF-3LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm

VCC = 5.0V

MAX19995 toc60

MAX19995 toc63

75

3RF-3LO RESPONSE (dBc)

65

55

TC = -30°C

1700 2500

INPUT P

16

15

14

(dBm)

1dB

13

INPUT P

12

TC = -30°C

11

10

1700 2500

TC = +85°C

RF FREQUENCY (MHz)

vs. RF FREQUENCY

1dB

TC = +85°C

TC = +25°C

RF FREQUENCY (MHz)

230021001900

230021001900

75

3RF-3LO RESPONSE (dBc)

65

55

1700 2500

16

15

MAX19995 toc64

14

(dBm)

1dB

13

INPUT P

12

11

10

1700 2500

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

INPUT P

vs. RF FREQUENCY

1dB

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

75

3RF-3LO RESPONSE (dBc)

65

VCC = 4.75V

MAX19995 toc65

55

1700 2500

16

15

VCC = 5.0V

14

(dBm)

1dB

13

INPUT P

12

11

10

1700 2500

230021001900

230021001900

RF FREQUENCY (MHz)

INPUT P

RF FREQUENCY (MHz)

VCC = 5.25V

vs. RF FREQUENCY

1dB

VCC = 5.25V

VCC = 4.75V

230021001900

MAX19995 toc66

230021001900

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

16 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

CHANNEL ISOLATION vs. RF FREQUENCY

60

CHANNEL ISOLATION vs. RF FREQUENCY

60

CHANNEL ISOLATION vs. RF FREQUENCY

60

55

50

45

40

CHANNEL ISOLATION (dB)

35

30

1700 2500

-20

-25

-30

-35

-40

LO LEAKAGE AT IF PORT (dBm)

-45

-50
1500 2300

TC = -30°C, +25°C, +85°C

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

TC = +85°C

TC = -30°C, +25°C

LO FREQUENCY (MHz)

55

MAX19995 toc67

50

45

40

CHANNEL ISOLATION (dB)

35

230021001900

30

PLO = -3dBm, 0dBm, +3dBm

1700 2500

RF FREQUENCY (MHz)

230021001900

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-20

PLO = -3dBm, 0dBm, +3dBm

-25

MAX19995 toc70

-30

-35

-40

LO LEAKAGE AT IF PORT (dBm)

-45

-50

210019001700

1500 2300

LO FREQUENCY (MHz)

210019001700

55

MAX19995 toc68

50

45

40

CHANNEL ISOLATION (dB)

35

30

1700 2500

-20

-25

MAX19995 toc71

-30

-35

-40

LO LEAKAGE AT IF PORT (dBm)

-45

-50
1500 2300

VCC = 4.75V, 5.0V, 5.25V

230021001900

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

VCC = 5.25V

VCC = 5.0V

VCC = 4.75V

210019001700

LO FREQUENCY (MHz)

MAX19995 toc69

MAX19995 toc72

RF-TO-IF ISOLATION vs. RF FREQUENCY

50

TC = -30°C, +25°C, +85°C

45

40

RF-TO-IF ISOLATION (dB)

35

30

1700 2500

RF FREQUENCY (MHz)

230021001900

RF-TO-IF ISOLATION vs. RF FREQUENCY

50

MAX19995 toc73

45

40

RF-TO-IF ISOLATION (dB)

35

30

1700 2500

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

MAX19995 toc74

230021001900

RF-TO-IF ISOLATION vs. RF FREQUENCY

50

45

40

RF-TO-IF ISOLATION (dB)

35

30

1700 2500

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

MAX19995 toc75

230021001900

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________

17

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20

-30

-40

-50

LO LEAKAGE AT RF PORT (dBm)

-60

-70

TC = -30°C, +25°C, +85°C

1400 2400

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-20

-30

-40
TC = +85°C

-50

2LO LEAKAGE AT RF PORT (dBm)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20

-30

MAX19995 toc76

-40

-50

LO LEAKAGE AT RF PORT (dBm)

-60

2000 220018001600

-70
1400 2400

PLO = -3dBm, 0dBm, +3dBm

2000 220018001600

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

TC = -30°C

TC = +25°C

-10

MAX19995 toc79

-20

-30

-40

-50

2LO LEAKAGE AT RF PORT (dBm)

PLO = 0dBm, +3dBm

PLO = -3dBm

-20

-30

MAX19995 toc77

-40

-50

LO LEAKAGE AT RF PORT (dBm)

-60

-70
1400 2400

-10

MAX19995 toc80

-20

-30

-40

-50

2LO LEAKAGE AT RF PORT (dBm)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

MAX19995 toc78

VCC = 4.75V, 5.0V, 5.25V

2000 220018001600

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

MAX19995 toc81

VCC = 4.75V, 5.0V, 5.25V

-60
1400 2400

LO FREQUENCY (MHz)

LO SWITCH ISOLATION

vs. LO FREQUENCY

70

TC = -30°C

60

50

LO SWITCH ISOLATION (dB)

40

TC = +85°C

1400 2300

LO FREQUENCY (MHz)

TC = +25°C

2000 21501700 18501550

-60

22001800 20001600

1400 2400

LO FREQUENCY (MHz)

22001800 20001600

LO SWITCH ISOLATION

vs. LO FREQUENCY

70

MAX19995 toc82

60

50

LO SWITCH ISOLATION (dB)

40

1400 2300

P

= -3dBm, 0dBm, +3dBm

LO

2000 21501700 18501550

LO FREQUENCY (MHz)

-60
1400 2400

70

MAX19995 toc83

60

50

LO SWITCH ISOLATION (dB)

40

1400 2300

22001800 20001600

LO FREQUENCY (MHz)

LO SWITCH ISOLATION

vs. LO FREQUENCY

MAX19995 toc84

VCC = 4.75V, 5.0V, 5.25V

2000 21501700 18501550

LO FREQUENCY (MHz)

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

18 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= +5.0V, PLO= 0dBm,

P

RF

= -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

PLO = -3dBm, 0dBm, +3dBm

10

20

30

RF PORT RETURN LOSS (dB)

40

50

1700 2500

RF FREQUENCY (MHz)

LO SELECTED RETURN LOSS

vs. LO FREQUENCY

0

5

PLO = +3dBm

1400 2400

LO FREQUENCY (MHz)

PLO = 0dBm

PLO = -3dBm

22001600 1800 2000

fIF = 190MHz

23001900 2100

0

MAX19995 toc85

5

VCC = 4.75V, 5.0V, 5.25V

10

IF PORT RETURN LOSS (dB)

15

20

50 500

IF PORT RETURN LOSS

vs. IF FREQUENCY

fLO = 1610MHz

IF FREQUENCY (MHz)

MAX19995 toc86

10

15

20

LO SELECTED RETURN LOSS (dB)

25

410140 230 320

30

MAX19995 toc87

LO UNSELECTED RETURN LOSS

vs. LO FREQUENCY

0

5

10

15

20

25

LO UN SELECTED RETURN LOSS (dB)

30

1400

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

SUPPLY CURRENT

400

vs. TEMPERATURE (T

VCC = 5.25V

MAX19995 toc88

2200 24001600 1800 2000

380

360

SUPPLY CURRENT (mA)

340

320

-35

VCC = 4.75V

TEMPERATURE (°C)

)

C

VCC = 5.0V

MAX19995 toc89

65 85-15 5 25 45

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________

19

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ, VCC= +3.3V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected

for a 190MHz IF, T

C

= +25°C, unless otherwise noted.)

CONVERSION GAIN vs. RF FREQUENCY

11

10

9

8

7

TC = +85°C

CONVERSION GAIN (dB)

6

5

1700

TC = -30°C

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

22

20

TC = +85°C

CONVERSION GAIN vs. RF FREQUENCY

11

10

9

8

7

CONVERSION GAIN (dB)

6

5

1700

VCC = 3.6V

VCC = 3.3V

VCC = 3.0V

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

22

20

VCC = 3.6V

VCC = 3.3V

= -5dBm/TONE

P

RF

TC = +25°C

VCC = 3.3V

= -5dBm/TONE

P

RF

VCC = 3.3V

MAX19995 toc90

25001900 2100 2300

MAX19995 toc93

CONVERSION GAIN vs. RF FREQUENCY

11

10

9

8

7

CONVERSION GAIN (dB)

PLO = -3dBm, 0dBm, +3dBm

6

5

1700

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

22

20

VCC = 3.3V

VCC = 3.3V

= -5dBm/TONE

P

RF

MAX19995 toc91

25001900 2100 2300

MAX19995 toc94

MAX19995 toc92

25001900 2100 2300

MAX19995 toc95

18

16

INPUT IP3 (dBm)

TC = -30°C

14

12

1700

TC = +25°C

230021001900

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

13

VCC = 3.3V

12

11

10

9

NOISE FIGURE (dB)

8

7

6

1700 2500

TC = +85°C

TC = +25°C

TC = -30°C

230021001900

RF FREQUENCY (MHz)

2500

INPUT IP3 (dBm)

MAX19995 toc96

NOISE FIGURE (dB)

18

PLO = -3dBm, 0dBm, +3dBm

16

14

12

1700

RF FREQUENCY (MHz)

230021001900

NOISE FIGURE vs. RF FREQUENCY

13

12

11

10

9

8

7

6

1700 2500

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

VCC = 3.3V

230021001900

2500

MAX19995 toc97

18

16

INPUT IP3 (dBm)

VCC = 3.0V

14

12

1700

VCC = 3.3V

230021001900

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

13

12

11

10

9

NOISE FIGURE (dB)

8

7

6

1700 2500

RF FREQUENCY (MHz)

VCC = 3.0V

VCC = 3.3V, 3.6V

230021001900

2500

MAX19995 toc98

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

20 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ, VCC= +3.3V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected

for a 190MHz IF, T

C

= +25°C, unless otherwise noted.)

2RF-2LO RESPONSE vs. RF FREQUENCY

80

70

TC = +85°C

60

2RF-2LO RESPONSE (dBc)

50

40

1700 2500

70

60

50

3RF-3LO RESPONSE (dBc)

40

T

= +25°

C

C

RF FREQUENCY (MHz)

3RF-3LO RESPONSE vs. RF FREQUENCY

TC = +85°C

TC = +25°C

TC = -30°C

TC = -30°C

PRF = -5dBm
VCC = 3.3V

230021001900

PRF = -5dBm
VCC = 3.3V

80

MAX19995 toc99

70

60

2RF-2LO RESPONSE (dBc)

50

40

1700 2500

70

MAX19995 toc102

60

50

3RF-3LO RESPONSE (dBc)

40

2RF-2LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm
VCC = 3.3V

PLO = -3dBm

PLO = 0dBm, +3dBm

230021001900

RF FREQUENCY (MHz)

3RF-3LO RESPONSE vs. RF FREQUENCY

PRF = -5dBm
VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

80

MAX19995 toc100

70

60

2RF-2LO RESPONSE (dBc)

50

40

1700 2500

70

MAX19995 toc103

60

50

3RF-3LO RESPONSE (dBc)

40

2RF-2LO RESPONSE vs. RF FREQUENCY

VCC = 3.6V

VCC = 3.3V

VCC = 3.0V

RF FREQUENCY (MHz)

PRF = -5dBm

230021001900

3RF-3LO RESPONSE vs. RF FREQUENCY

VCC = 3.6V

VCC = 3.0V

PRF = -5dBm

VCC = 3.3V

MAX19995 toc101

MAX19995 toc104

MAX19995 toc106

30

1700 2500

RF FREQUENCY (MHz)

INPUT P

12

11

10

(dBm)

9

1dB

8

INPUT P

7

6

5

1700 2500

1dB

VCC = 3.3V

VCC = 3.0V

RF FREQUENCY (MHz)

30

1700 2500

RF FREQUENCY (MHz)

INPUT P

12

11

vs. RF FREQUENCY

1dB

TC = +85°C

230021001900

VCC = 3.3V

10

(dBm)

9

1dB

8

7

6

5

1700

TC = -30°C

RF FREQUENCY (MHz)

TC = +25°C

230021001900

INPUT P

2500

MAX19995 toc105

(dBm)

INPUT P

30

1700 2500

RF FREQUENCY (MHz)

12

11

10

9

1dB

8

PLO = -3dBm, 0dBm, +3dBm

7

6

5

1700

INPUT P

vs. RF FREQUENCY

1dB

RF FREQUENCY (MHz)

230021001900

VCC = 3.3V

230021001900

2500

230021001900

vs. RF FREQUENCY

VCC = 3.6V

MAX19995 toc107

230021001900

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________

21

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ, VCC= +3.3V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected

for a 190MHz IF, T

C

= +25°C, unless otherwise noted.)

CHANNEL ISOLATION vs. RF FREQUENCY

60

55

50

45

40

CHANNEL ISOLATION (dB)

35

30

TC = -30°C, +25°C, +85°C

1700 2500

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-30

-35

-40

-45

CHANNEL ISOLATION vs. RF FREQUENCY

60

55

50

45

40

CHANNEL ISOLATION (dB)

35

30

VCC = 3.0V, 3.3V, 3.6V

1700 2500

RF FREQUENCY (MHz)

230021001900

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-30

-35

-40

-45

VCC = 3.6V

VCC = 3.3V

230021001900

VCC = 3.3V

TC = +85°C

60

55

MAX19995 toc108

50

45

40

CHANNEL ISOLATION (dB)

35

30

1700 2500

-30

-35

MAX19995 toc111

-40

-45

CHANNEL ISOLATION vs. RF FREQUENCY

VCC = 3.3V

MAX19995 toc109

PLO = -3dBm, 0dBm, +3dBm

230021001900

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

VCC = 3.3V

MAX19995 toc112

PLO = -3dBm

MAX19995 toc110

MAX19995 toc113

-50

LO LEAKAGE AT IF PORT (dBm)

-55

-60
1500 2300

TC = +25°C

TC = -30°C

210019001700

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION vs. RF FREQUENCY

60

VCC = 3.3V

55

50

45

40

RF-TO-IF ISOLATION (dB)

35

30

1700 2500

TC = -30°C

TC = +25°C

TC = +85°C

230021001900

RF FREQUENCY (MHz)

-50

LO LEAKAGE AT IF PORT (dBm)

-55

-60
1500 2300

RF-TO-IF ISOLATION vs. RF FREQUENCY

60

VCC = 3.3V

55

MAX19995 toc114

50

45

40

RF-TO-IF ISOLATION (dB)

35

30

1700 2500

PLO = 0dBm

PLO = +3dBm

LO FREQUENCY (MHz)

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

-50

LO LEAKAGE AT IF PORT (dBm)

210019001700

VCC = 3.0V

-55

-60
1500 2300

LO FREQUENCY (MHz)

VCC = 3.3V

210019001700

RF-TO-IF ISOLATION vs. RF FREQUENCY

60

55

MAX19995 toc115

50

45

40

RF-TO-IF ISOLATION (dB)

35

30

230021001900

1700 2500

VCC = 3.0V, 3.3V, 3.6V

230021001900

RF FREQUENCY (MHz)

MAX19995 toc116

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

22 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ, VCC= +3.3V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected

for a 190MHz IF, T

C

= +25°C, unless otherwise noted.)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20
VCC = 3.3V

-30

-40

TC = -30°C

MAX19995 toc117

-20

-30

-40

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.3V

MAX19995 toc118

-20

-30

-40

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.6V

MAX19995 toc119

-50

LO LEAKAGE AT RF PORT (dBm)

-60

-70

1400 2400

TC = +25°C

TC = +85°C

2000 220018001600

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10
VCC = 3.3V

-20

-30

-40

-50

2LO LEAKAGE AT RF PORT (dBm)

-60

1400 2400

TC = -30°C, +25°C, +85°C

LO FREQUENCY (MHz)

LO SWITCH ISOLATION

vs. LO FREQUENCY

70

VCC = 3.3V

-50

LO LEAKAGE AT RF PORT (dBm)

-60

-70
1400 2400

PLO = -3dBm, 0dBm, +3dBm

2000 220018001600

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10
VCC = 3.3V

-20

MAX19995 toc120

-30

-40

-50

2LO LEAKAGE AT RF PORT (dBm)

22001800 20001600

-60

1400 2400

PLO = -3dBm, 0dBm, +3dBm

22001800 20001600

LO FREQUENCY (MHz)

LO SWITCH ISOLATION

vs. LO FREQUENCY

70

VCC = 3.3V

-50

LO LEAKAGE AT RF PORT (dBm)

-60

-70
1400 2400

-10

-20

MAX19995 toc121

-30

-40

-50

2LO LEAKAGE AT RF PORT (dBm)

-60

1400 2400

70

VCC = 3.0V

VCC = 3.3V

2000 220018001600

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.6V

VCC = 3.3V

VCC = 3.0V

22001800 20001600

LO FREQUENCY (MHz)

LO SWITCH ISOLATION

vs. LO FREQUENCY

MAX19995 toc122

TC = -30°C

60

50

LO SWITCH ISOLATION (dB)

TC = +85°C

TC = +25°C

40

1400 2300

LO FREQUENCY (MHz)

2000 21501700 18501550

MAX19995 toc123

60

50

LO SWITCH ISOLATION (dB)

40

1400 2300

PLO = -3dBm, 0dBm, +3dBm

2000 21501700 18501550

LO FREQUENCY (MHz)

MAX19995 toc124

60

50

LO SWITCH ISOLATION (dB)

40

1400 2300

VCC = 3.0V, 3.3V, 3.6V

LO FREQUENCY (MHz)

MAX19995 toc125

2000 21501700 18501550

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________

23

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ, VCC= +3.3V, PLO= 0dBm, PRF= -5dBm, LO is low-side injected

for a 190MHz IF, T

C

= +25°C, unless otherwise noted.)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

10

PLO = -3dBm, 0dBm, +3dBm

20

30

RF PORT RETURN LOSS (dB)

40

50

1700

RF FREQUENCY (MHz)

0

5

10

LO SELECTED RETURN LOSS

vs. LO FREQUENCY

0

5

10

15

20

25

30

PLO = 0dBm

1400 2400

LO FREQUENCY (MHz)

VCC = 3.6V

PLO = -3dBm

)

C

PLO = +3dBm

fIF = 190MHz
VCC = 3.3V

MAX19995 toc126

23001900 2100

2500

LO UNSELECTED RETURN LOSS

vs. LO FREQUENCY

VCC = 3.3V

IF PORT RETURN LOSS

vs. IF FREQUENCY

0

5

VCC = 3.0V, 3.3V, 3.6V

10

IF PORT RETURN LOSS (dB)

15

20

50 500

IF FREQUENCY (MHz)

MAX19995 toc129

fLO = 1610MHz

410140 230 320

260

240

MAX19995 toc86

LO SELECTED RETURN LOSS (dB)

SUPPLY CURRENT

vs. TEMPERATURE (T

VCC = 3.3V

VCC = 3.3V

22001600 1800 2000

MAX19995 toc130

MAX19995 toc128

15

20

25

LO UN SELECTED RETURN LOSS (dB)

30

1400

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

220

SUPPLY CURRENT (mA)

200

VCC = 3.0V

180

2200 24001600 1800 2000

-35
TEMPERATURE (°C)

65 85-15 5 25 45

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

24 ______________________________________________________________________________________

Pin Description

PIN NAME FUNCTION

1 RFMAIN Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.

2 TAPMAIN

3, 5, 7, 12,
20, 22, 24,

25, 26, 34

4, 6, 10,

16, 21,

30, 36

8 TAPDIV

9 RFDIV Diversity Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.

11 IFD_SET

13, 14 IFD+, IFD-

15 IND_EXTD

17 LO_ADJ_D

18, 28 N.C. No Connection. Not internally connected.

19 LO1

23 LOSEL Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.

27 LO2

29 LO_ADJ_M

31 IND_EXTM

32, 33 IFM-, IFM+

35 IFM_SET

—EP

GND Ground

V

CC

Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.

Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as
possible to the pin.

Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.

IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the diversity IF amplifier.

Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
Typical Application Circuit).

Diversity External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and
LO-to-IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating
Characteristics for typical performance vs. inductor value).

LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the diversity LO amplifier.

Local Oscillator 1 Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.

Local Oscillator 2 Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.

LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the
main LO amplifier.

Main External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-to-IF
isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating
Characteristics for typical performance vs. Inductor value).

Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
Typical Application Circuit).

IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the
main IF amplifier.

Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via
grounds are also required to achieve the noted RF performance.

CC

(see the

CC

(see the

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________ 25

Detailed Description

The MAX19995 is a dual-channel downconverter
designed to provide 9dB of conversion gain,
+24.8dBm input IP3, +13.3dBm 1dB input compres­sion point, and a noise figure of 9dB.

In addition to its high-linearity performance, the
MAX19995 achieves a high level of component integra­tion. The device integrates two double-balanced mixers
for two-channel downconversion. Both the main and
diversity channels include a balun and matching cir­cuitry to allow 50Ω single-ended interfaces to the RF
ports and the two LO ports. An integrated single-pole,
double-throw (SPDT) switch provides 50ns switching
time between the two LO inputs, with 56dB of LO-to-LO
isolation and -31dBm of LO leakage at the RF port.
Furthermore, the integrated LO buffers provide a high
drive level to each mixer core, reducing the LO drive
required at the MAX19995’s inputs to a range of -3dBm
to +3dBm. The IF ports for both channels incorporate
differential outputs for downconversion, which is ideal
for providing enhanced 2RF-2LO performance.

Specifications are guaranteed over broad frequency
ranges to allow for use in WCDMA/LTE, DCS1800/
PCS1900 GSM/EDGE, and cdma2000 base stations.
The MAX19995 is specified to operate over an RF input
range of 1700MHz to 2200MHz, an LO range of
1400MHz to 2000MHz, and an IF range of 50MHz to
500MHz. The external IF components set the lower fre­quency range. Operation beyond these ranges is pos­sible; see the

Typical Operating Characteristics

for
additional information. Although this device is opti­mized for low-side LO injection applications, it can
operate in high-side LO injection modes as well.
However, performance degrades as f

LO

continues to
increase. For increased high-side LO performance,
refer to the MAX19995A data sheet.

RF Port and Balun

The RF input ports of both the main and diversity chan­nels are internally matched to 50Ω, requiring no exter­nal matching components. A DC-blocking capacitor is

required as the input is internally DC shorted to ground
through the on-chip balun. The RF port input return loss
is typically better than 16dB over the RF frequency
range of 1700MHz to 2200MHz.

LO Inputs, Buffer, and Balun

The MAX19995 is optimized for a 1400MHz to
2000MHz LO frequency range. As an added feature,
the MAX19995 includes an internal LO SPDT switch for
use in frequency-hopping applications. The switch
selects one of the two single-ended LO ports, allowing
the external oscillator to settle on a particular frequency
before it is switched in. LO switching time is typically
50ns, which is more than adequate for typical GSM
applications. If frequency hopping is not employed,
simply set the switch to either of the LO inputs. The
switch is controlled by a digital input (LOSEL), where
logic-high selects LO1 and logic-low selects LO2. LO1
and LO2 inputs are internally matched to 50Ω, requir­ing only 39pF DC-blocking capacitors.

If LOSEL is connected directly to a logic source, then
voltage MUST be applied to VCCbefore digital logic is
applied to LOSEL to avoid damaging the part.
Alternatively, a 1kΩ resistor can be placed in series at
the LOSEL to limit the input current in applications
where LOSEL is applied before VCC.

The main and diversity channels incorporate a two­stage LO buffer that allows for a wide-input power
range for the LO drive. The on-chip low-loss baluns,
along with LO buffers, drive the double-balanced mix­ers. All interfacing and matching components from the
LO inputs to the IF outputs are integrated on chip.

High-Linearity Mixer

The core of the MAX19995 dual-channel downconverter
consists of two double-balanced, high-performance
passive mixers. Exceptional linearity is provided by the
large LO swing from the on-chip LO buffers. When com­bined with the integrated IF amplifiers, the cascaded
IIP3, 2RF-2LO rejection, and noise figure performance
are typically +24.8dBm, 79dBc, and 9dB, respectively.

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

26 ______________________________________________________________________________________

Differential IF

The MAX19995 has an IF frequency range of 50MHz to
500MHz, where the low-end/high-end frequency
depends on the frequency response of the external IF
components. Note that these differential ports are ideal
for providing enhanced IIP2 performance. Single­ended IF applications require a 4:1 (impedance ratio)
balun to transform the 200Ω differential IF impedance
to a 50Ω single-ended system. After the balun, the
return loss is typically 12.5dB. The user can use a dif­ferential IF amplifier on the mixer IF ports, but a DC
block is required on both IFD+/IFD- and IFM+/IFM­ports to keep external DC from entering the IF ports of
the mixer.

Applications Information

Input and Output Matching

The RF and LO inputs are internally matched to 50Ω.
No matching components are required. The RF port
input return loss is typically better than 16dB over the
RF frequency range of 1700MHz to 2200MHz and
return loss at the LO ports are typically better than
16dB over the entire LO range. RF and LO inputs
require only DC-blocking capacitors for interfacing.

The IF output impedance is 200Ω (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance to a 50Ω single-ended
output (see the

Typical Application Circuit

).

Reduced-Power Mode

Each channel of the MAX19995 has two pins
(LO_ADJ_, IF_SET) that allow external resistors to set
the internal bias currents. Nominal values for these
resistors are given in Table 1. Larger value resistors
can be used to reduce power dissipation at the
expense of some performance loss. See the

Typical

Operating Characteristics

to evaluate the biasing vs.
performance tradeoff. If ±1% resistors are not readily
available, ±5% resistors may be substituted.

Significant reductions in power consumption can also be
realized by operating the mixer with an optional supply
voltage of +3.3V. Doing so reduces the overall power
consumption by up to 62%. See the

+3.3V Supply AC

Electrical Characteristics

and the relevant +3.3V curves

in the

Typical Operating Characteristics

section.

IND_EXT_ Inductors

For applications requiring optimum RF-to-IF and LO-to­IF isolation, connect low-ESR inductors from IND_EXT_
(pins 15 and 31) to ground. When improved isolation is
not required, connect IND_EXT_ to ground using a 0Ω
resistance. See the

Typical Operating Characteristics

to

evaluate the isolation vs. inductor value tradeoff.

Layout Considerations

A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be
such that any capacitance from both IF- and IF+ to
ground does not exceed several picofarads. For the
best performance, route the ground pin traces directly
to the exposed pad under the package. The PCB
exposed pad MUST be connected to the ground plane
of the PCB. It is suggested that multiple vias be used to
connect this pad to the lower-level ground planes. This
method provides a good RF/thermal-conduction path for
the device. Solder the exposed pad on the bottom of the
device package to the PCB. The MAX19995 evaluation
kit can be used as a reference for board layout. Gerber
files are available upon request at www.maxim-ic.com.

Power-Supply Bypassing

Proper voltage-supply bypassing is essential for high­frequency circuit stability. Bypass each VCCpin and
TAPMAIN/TAPDIV with the capacitors shown in the

Typical Application Circuit

(see Table 1 for component
values). Place the TAPMAIN/TAPDIV bypass capacitors
to ground within 100 mils of the pin.

Exposed Pad RF/Thermal Considerations

The exposed pad (EP) of the MAX19995’s 36-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which the
MAX19995 is mounted be designed to conduct heat
from the EP. In addition, provide the EP with a low­inductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly
or through an array of plated via holes.

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________ 27

Table 1. Component Values

COMPONENT VALUE DESCRIPTION

C1, C2, C7, C8, C14, C16 39pF Microwave capacitors (0402)

C3, C6 0.033µF Microwave capacitors (0603)

C4, C5 — Not used

C9, C13, C15, C17, C18 0.01µF Microwave capacitors (0402)

C10, C11, C12, C19, C20, C21 150pF Microwave capacitors (0603)

L1, L2, L4, L5 330nH Wire-wound high-Q inductors (0805)

Wire-wound high-Q inductors (0603). Smaller values can be

L3, L6 10nH

806Ω

R1, R4

681Ω

909Ω ±1% resistors (0402). Used for V

2.32kΩ

R2, R5

1.5kΩ

2.49kΩ ±1% resistors (0402). Used for V

R3, R6 0Ω 0Ω resistors (1206)

T1, T2 4:1

U1 — MAX19995 IC

used at the expense of some performance loss (see the
Typical Operating Characteristics).

± 1% r esi stor s ( 0402) . U sed for D C S/PC S b a n d , V
ap p l i cati ons. Lar g er val ues can b e used to r ed uce p ow er at the
exp ense of som e p er for m ance l oss.

±1% resistors (0402). Used for UMTS band, V
applications. Larger values can be used to reduce power at
the expense of some performance loss.

± 1% r esi stor s ( 0402) . U sed for D C S/PC S b a n d , V
ap p l i cati ons. Lar g er val ues can b e used to r ed uce p ow er at the
exp ense of som e p er for m ance l oss.

±1% resistors (0402). Used for UMTS band, V
applications. Larger values can be used to reduce power at
the expense of some performance loss.

Transformers (200:50)

= +5 .0 V

C C

= +5.0V

CC

= +3.3V applications.

CC

= +5 .0 V

C C

= +5.0V

CC

= +3.3V applications.

CC

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch

28 ______________________________________________________________________________________

Typical Application Circuit

C19

RF MAIN INPUT

V

CC

C4

C5

RF DIV INPUT

T1

4:1

V

CC

C17

LO2

27

GND

26

GND

25

GND

24

LOSEL

23

GND

22

V

CC

21

GND

20

LO1

19

V

CC

C16

V

C14

IF MAIN OUTPUT

LO2

LO SELECT

CC

C15

LO1

R3

31

EXPOSED

PAD

15

V

CC

V

CC

L1

L2

L3

30

16

C21

R2

LO_ADJ_M

29

17

LO_ADJ_D

R5

C20

N.C.

28

18

N.C.

V

CC

R1

V

CC

C18

CC

V

IFM_SET

36

GND

V

GND

V

GND

RFDIV

V

CC

+

1

2

3

CC

4

5

CC

6

7

8

9

10

CC

V

IFD_SET

R4

C1

RFMAIN

TAPMAIN

C2C3

V

CC

C7C6

TAPDIV

C8

C9

IFM+

GND

35

34

11

12

IFD+

GND

IND_EXTM

IFM-

33

32

MAX19995

13

14

IFD-

IND_EXTD

L6

V

CC

R6

C11

L5

C12

L4

C10

C13

T2

4:1

IF DIV OUTPUT

MAX19995

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.

Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________

29

© 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.

Pin Configuration/Functional Diagram

Chip Information

PROCESS: SiGe BiCMOS

Package Information

For the latest package outline information and land patterns, go
to www.maxim-ic.com/packages

.

PACKAGE TYPE PACKAGE CODE DOCUMENT NO.

36 Thin QFN-EP T3666+2

21-0141

TOP VIEW

RFMAIN

TAPMAIN

GND

V

CC

GND

V

CC

GND

TAPDIV

RFDIV

CC

IFM_SET

V

36

+

1

2

3

4

5

6

7

8

9

10

CC

V

35

11

IFD_SET

GND

34

12

GND

IFM+

33

13

IFD+

IFM-

32

14

IFD-

IND_EXTM

31

MAX19995

EXPOSED

PAD

15

IND_EXTD

CC

V

30

16

CC

V

LO_ADJ_M

N.C.

29

28

17

18

N.C.

LO_ADJ_D

27

LO2

26

GND

25

GND

24

GND

23

LOSEL

22

GND

21

V

CC

20

GND

19

LO1

THIN QFN (EXPOSED PAD)

6mm x 6mm

EXPOSED PAD ON THE BOTTOM OF THE PACKAGE