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MAX19993
User Manual
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Rainbow Electronics MAX19993 User Manual

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19-5307; Rev 0; 6/10
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
General Description
15.4dBm 1dB input compression point, and a noise figure of 9.8dB for 1200MHz to 1700MHz diversity receiver applications. With an optimized LO frequency range of 1000MHz to 1560MHz, this mixer is ideal for low-side LO injection architectures. High-side LO injection is supported by the MAX19993A, which is pin­pin and functionally compatible with the MAX19993.
In addition to offering excellent linearity and noise performance, the MAX19993 also yields a high level of component integration. This device includes two double-balanced passive mixer cores, two LO buffers, a dual-input LO selectable switch, and a pair of differential IF output amplifiers. Integrated on-chip baluns allow for single-ended RF and LO inputs. The device requires a nominal LO drive of 0dBm and a typical supply current of 337mA at V
The MAX19993 is pin compatible with the MAX9985/ MAX19985A/MAX9995/MA X 1 9 9 9 3 A / M A X 1 9 9 9 4 / MAX19994A/MAX19995/MAX19995A series of 700MHz to 2200MHz mixers and pin similar to the MAX19997A/ MAX19999 series of 1850MHz to 4000MHz mixers, making this entire family of downconverters ideal for applications where a common PCB layout is used across multiple frequency bands.
The device is available in a 6mm x 6mm, 36-pin TQFN package with an exposed pad. Electrical performance is guaranteed over the extended temperature range, from
= -40NC to +85NC.
T
C
= +5.0V or 275mA at VCC = +3.3V.
CC
Applications
WCDMA/LTE Base Stations
Wireless Local Loop
Fixed Broadband Wireless Access
Private Mobile Radios
Military Systems
Features
S 1200MHz to 1700MHz RF Frequency Range
S 1000MHz to 1560MHz LO Frequency Range
S 50MHz to 500MHz IF Frequency Range
S 6.4dB Typical Conversion Gain
S 9.8dB Typical Noise Figure
S +27dBm Typical Input IP3
S 15.4dBm Typical Input 1dB Compression Point
S 72dBc Typical 2RF - 2LO Spurious Rejection at
PRF = -10dBm
S Dual Channels Ideal for Diversity Receiver
Applications
S 47dB Typical Channel-to-Channel Isolation
S Low -6dBm to +3dBm LO Drive
S Integrated LO Buffer
S Internal RF and LO Baluns for Single-Ended
Inputs
S Built-In SPDT LO Switch with 57dB LO-to-LO
Isolation and 50ns Switching Time
S Pin Compatible with the MAX9985/19985A/
MAX9995/MAX19993A/MAX19994/MAX19994A/ MAX19995/MAX19995A Series of 700MHz to 2200MHz Mixers
S Pin Similar to the MAX19997A/MAX19999 Series
of 1850MHz to 4000MHz Mixers
S Single +5V or +3.3V Supply
S External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced­Performance Mode
Ordering Information
PART TEMP RANGE PIN-PACKAGE
MAX19993ETX+ MAX19993ETX+T
+Denotes a lead(Pb)-free/RoHS-compliant package. *EP = Exposed pad.
T = Tape and reel.
-40NC to +85NC
-40NC to +85NC
36 TQFN-EP* 36 TQFN-EP*
MAX19993
_______________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
VCC to GND ..........................................................-0.3V to +5.5V
LO1, LO2 to GND LOSEL to GND RFMAIN, RFDIV, and LO_ Input Power RFMAIN, RFDIV Current (RF is DC shorted to GND
through a balun) TAPMAIN, TAPDIV Any Other Pins to GND
MAX19993
Note 1: Based on junction temperature TJ = TC + (BJC x VCC x ICC). This formula can be used when the temperature of the
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150NC.
Note 2: Junction temperature TJ = TA + (BJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150NC.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
.............................................................. Q0.3V
......................................... -0.3V to (VCC + 0.3V)
........................+15dBm
.............................................................50mA
..................................................-0.3V to +2V
............................ -0.3V to (VCC + 0.3V)
Continuous Power Dissipation (Note 1)
BJA (Notes 2, 3) B
(Notes 1, 3)
JC Operating Temperature Range (Note 4) Junction Temperature Storage Temperature Range Lead Temperature (soldering, 10s) Soldering Temperature (reflow)
........................................................... +38NC/W
.............................................................7.4NC/W
.....................................................+150NC
............................ -65NC to +150NC
................................+300NC
......................................+260NC
..............................8.7W
... TC = -40NC to +85NC
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 4.75V to 5.25V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.82kI. Typical values are at V
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V Supply Current I LOSEL Input High Voltage V LOSEL Input Low Voltage V LOSEL Input Current I
IH and IIL
= 5.0V, TC = +25NC, unless otherwise noted. All parameters are production tested.)
CC
CC
CC
Total supply current 337 400 mA
IH
IL
4.75 5 5.25 V
2 V
0.8 V
-10 +10
FA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 3.0V to 3.6V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at V tested.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V Supply Current I LOSEL Input High Voltage V LOSEL Input Low Voltage V
= 3.3V, TC = +25NC, unless otherwise noted. Parameters are guaranteed by design and not production
CC
CC
CC
Total supply current (Note 5) 275 mA
IH
IL
3.0 3.3 3.6 V
2 V
0.8 V
2
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Frequency f LO Frequency f
IF Frequency f
RF
LO
(Note 6) 1200 1700 MHz (Note 6) 1000 1560 MHz
Using Mini-Circuits TC4-1W-17 4:1 trans­former as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Note 6)
IF
Using Mini-Circuits TC4-1W-7A 4:1 trans­former as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Note 6)
100 500
50 250
MAX19993
MHz
LO Drive Level P
(Note 6) -6 +3 dBm
LO
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from 50I sources, P T
= -40NC to +85NC. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz,
C
TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
Conversion Gain (Note 5) G
Conversion Gain Flatness Gain Variation Over Temperature TC Input Compression Point IP
Input Third-Order Intercept Point IIP3
Input Third-Order Intercept Point Variation Over Temperature
Noise Figure (Note 9) NF
= -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, f
LO
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
T
C
DG
C
CG
1dBfRF
TC
IIP3
SSB
= +25NC
C
= +25NC, fRF = 1427MHz to 1463MHz
T
C
fRF = 1427MHz to 1463MHz TC = -40NC to +85NC
= 1450MHz (Notes 5, 8) 12.9 15.4 dBm
f
- f
RF1
f
RF1
f
RF
(Note 5)
f
RF1
f
RF
f
RF1
T
C
Single sideband, no blockers present 9.8 12.7
fRF = 1427MHz to 1463MHz, TC = +25NC, P
LO
present
f
RF
single sideband, no blockers present
= 1MHz, PRF = -5dBm per tone 24.0 27.0
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= 1427MHz to 1463MHz, TC = +25NC
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= 1427MHz to 1463MHz (Note 5)
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= -40NC to +85NC
= 0dBm, single sideband, no blockers
= 1427MHz to 1463MHz, PLO = 0dBm,
= 1060MHz to 1560MHz, fIF = 140MHz, fRF > fLO,
LO
4.5 6.4 7.4
5.1 6.4 7.0
5.2 6.4 6.9 Q0.03
-0.009
24.8 27.0
24.4 27.0
Q0.5
9.8 11.0
9.8 12.0
dB/NC
dBm
dBm
dB
dB
dB
3
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from 50I sources, P T
= -40NC to +85NC. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz,
C
TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
Noise Figure Temperature Coefficient
MAX19993
Noise Figure with Blocker NF
2RF - 2LO Spur Rejection (Note 9)
3RF - 3LO Spur Rejection (Note 9)
RF Input Return Loss
LO Input Return Loss
IF Output Impedance Z
IF Output Return Loss
RF-to-IF Isolation (Note 5) 33 dB LO Leakage at RF Port -38 dBm 2LO Leakage at RF Port -27 dBm
= -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, f
LO
= 1060MHz to 1560MHz, fIF = 140MHz, fRF > fLO,
LO
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
TC
Single sideband, no blockers present,
NF
T
= -40NC to +85NC
C
P
BLOCKER
f
LO
B
P
LO
= +8dBm, fRF = 1450MHz,
= 1310MHz, f
BLOCKER
= 0dBm, VCC = 5.0V, TC = +25oC
= 1550MHz,
0.016
21.0 22.8 dB
(Notes 9, 10)
= 1450MHz,
f
2x2
3x3
RF
f
= 1310MHz,
LO
f
= 1380MHz
SPUR
= 1450MHz,
f
RF
f
= 1310MHz,
LO
f
= 1380MHz,
SPUR
P
= 0dBm,
LO
V
= 5.0V,
CC
T
= +25oC
C
f
= 1450MHz,
RF
f
= 1310MHz,
LO
f
= 1356.67MHz
SPUR
f
= 1450MHz,
RF
f
= 1310MHz,
LO
f
= 1356.67MHz,
SPUR
P
= 0dBm,
LO
V
= 5.0V,
CC
T
= +25oC
C
LO and IF terminated into matched impedance, LO on
LO port selected, RF and IF terminated into matched impedance
LO port unselected, RF and IF terminated into matched impedance
Nominal differential impedance of the IF
IF
outputs
P
= -10dBm 58 72
RF
= -5dBm 53 67
P
RF
P
= -10dBm 61 72
RF
= -5dBm 56 67
P
RF
P
= -10dBm 77 93
RF
= -5dBm 67 83
P
RF
= -10dBm 82 93
P
RF
= -5dBm 72 83
P
RF
21 dB
24
27
200
RF terminated into 50I, LO driven by 50I source, IF transformed to 50I using external components shown in the Typical
15 dB
Application Circuit
dB/NC
dBc
dBc
dBc
dBc
dB
I
4
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from 50I sources, P T
= -40NC to +85NC. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz,
C
TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
LO Leakage at IF Port (Note 5) -18 dBm
Channel Isolation (Note 5)
LO-to-LO Isolation
LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns
3.3V SUPPLY, LOW SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, PRF = -5dBm, PLO = 0dBm, f
= 1450MHz, fLO = 1310MHz, fIF = 140MHz, TC = +25NC, unless otherwise noted.) (Note 7)
RF
Conversion Gain G Conversion Gain Flatness Gain Variation Over Temperature TC Input Compression Point IP Input Third-Order Intercept Point IIP3 f
Input Third-Order Intercept Point Variation Over Temperature
Noise Figure NF
Noise Figure Temperature Coefficient
2RF - 2LO Spur Rejection 2 x 2
3RF - 3LO Spur Rejection 3 x 3
RF Input Return Loss
LO Input Return Loss
= -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, f
LO
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I
RFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I
= +3dBm, P
P
LO1
f
= 1310MHz, f
LO1
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
(Note 5) 6.2 dB
C
DG
1dB
TC
TC
fRF = 1427MHz to 1463MHz
C
TC = -40NC to +85NC
CG
(Note 8) 12.8 dBm
- f
RF1
f
IIP3
SSB
RF1
T
C
Single sideband, no blockers present 9.8 dB
Single sideband, no blockers present,
NF
T
C
P
RF
P
RF
P
RF
P
RF
LO and IF terminated into matched impedance, LO on
LO port selected, RF and IF terminated into matched impedance
LO port unselected, RF and IF terminated into matched impedance
= 1MHz 24.4 dBm
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= -40NC to +85NC
= -40NC to +85NC
= -10dBm 73 = -5dBm 68 = -10dBm 80 = -5dBm 70
= +3dBm,
LO2
= 1311MHz (Note 5)
LO2
= 1060MHz to 1560MHz, fIF = 140MHz, fRF > fLO,
LO
43 47
43 47
47 57 dB
Q0.05
-0.009
Q0.8
0.016
21 dB
24
27
dB/NC
dB/NC
dB
dB
dBm
dBc
dBc
dB
MAX19993
5
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch
3.3V SUPPLY, LOW SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, PRF = -5dBm, PLO = 0dBm, f
= 1450MHz, fLO = 1310MHz, fIF = 140MHz, TC = +25NC, unless otherwise noted.) (Note 7)
RF
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF terminated into 50I, LO driven by
IF Output Return Loss
MAX19993
RF-to-IF Isolation 33 dB LO Leakage at RF Port -45 dBm 2LO Leakage at RF Port -27 dBm LO Leakage at IF Port -22 dBm
Channel Isolation
LO-to-LO Isolation
LO Switching Time
Note 5: 100% production tested for functionality. Note 6: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See
the Typical Operating Characteristics section.
Note 7: All limits reflect losses of external components, including a 0.5dB loss at fIF = 140MHz due to the 4:1 transformer. Output
measurements were taken at IF outputs of the Typical Application Circuit.
Note 8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50I source. Note 9: Not production tested. Note 10: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects
of all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
50I source, IF transformed to 50I using external components shown in the Typical
Application Circuit
RFMAIN converted power measured at IFDIV relative to IFMAIN, all unused ports terminated to 50I
RFDIV converted power measured at IFMAIN relative to IFDIV, all unused ports terminated to 50I
= +3dBm, P
P
LO1
f
= 1310MHz, f
LO1
50% of LOSEL to IF settled within 2 degrees
= +3dBm,
LO2
= 1311MHz
LO2
15 dB
47
47
57 dB
50 ns
dB
6
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics
(Typical Application Circuit (see Table 1). V otherwise noted.)
CC
= 5.0V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
= 0dBm,
LO
= +25°C, unless
TC
MAX19993
CONVERSION GAIN vs. RF FREQUENCY
8
7
6
CONVERSION GAIN (dB)
5
4
TC = +25°C
1200 1700
RF FREQUENCY (MHz)
TC = -40°C
TC = +85°C
INPUT IP3 vs. RF FREQUENCY
28
27
INPUT IP3 (dBm)
26
TC = +85°C
PRF = -5dBm/TONE
TC = +25°C
TC = -40°C
CONVERSION GAIN vs. RF FREQUENCY
8
MAX19993 toc01
1600150014001300
7
6
PLO = -6dBm, -3dBm, 0dBm, +3dBm
CONVERSION GAIN (dB)
5
4
1200 1700
RF FREQUENCY (MHz)
1600150014001300
MAX19993 toc02
INPUT IP3 vs. RF FREQUENCY
MAX19993 toc04
28
27
INPUT IP3 (dBm)
26
PLO = +3dBm
PLO = -3dBm
PRF = -5dBm/TONE
MAX19993 toc05
PLO = 0dBm
CONVERSION GAIN vs. RF FREQUENCY
8
7
6
CONVERSION GAIN (dB)
5
4
1200 1700
VCC = 4.75V, 5.0V, 5.25V
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
28
27
INPUT IP3 (dBm)
26
PRF = -5dBm/TONE
VCC = 5.25V
VCC = 5.0V
MAX19993 toc03
1600150014001300
MAX19993 toc06
25
1200 1700
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
NOISE FIGURE (dB)
9
8
7
TC = +85°C
TC = +25°C
TC = -40°C
1200 1700
RF FREQUENCY (MHz)
PLO = -6dBm
1600150014001300
25
1200 1700
RF FREQUENCY (MHz)
1600150014001300
NOISE FIGURE vs. RF FREQUENCY
13
12
MAX19993 toc07
11
10
NOISE FIGURE (dB)
9
PLO = -6dBm, -3dBm, 0dBm, +3dBm
8
1600150014001300
7
1200 1700
RF FREQUENCY (MHz)
1600150014001300
MAX19993 toc08
NOISE FIGURE (dB)
25
1200 1700
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
8
7
1200 1700
VCC = 4.75V
1600150014001300
RF FREQUENCY (MHz)
MAX19993 toc09
VCC = 4.75V, 5.0V, 5.25V
1600150014001300
RF FREQUENCY (MHz)
7
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). V otherwise noted.)
CC
= 5.0V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
= 0dBm,
LO
= +25°C, unless
TC
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
MAX19993
70
= +25°C
T
C
60
2RF - 2LO RESPONSE (dBc)
50
1200 1700
RF FREQUENCY (MHz)
3RF - 3LO RESPONSE vs. RF FREQUENCY
95
TC = +85°C
85
75
3RF - 3LO RESPONSE (dBc)
65
TC = -40°C
PRF = -5dBm
TC = +85°C
TC = -40°C
1600150014001300
PRF = -5dBm
T
= +25°C
C
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
MAX19993 toc10
70
60
2RF - 2LO RESPONSE (dBc)
50
1200 1700
3RF - 3LO RESPONSE vs. RF FREQUENCY
95
MAX19993 toc13
85
75
3RF - 3LO RESPONSE (dBc)
65
PLO = +3dBm
P
PLO = -3dBm
= -6dBm
P
LO
= -6dBm
LO
RF FREQUENCY (MHz)
PLO = 0dBm
PLO = +3dBm
PRF = -5dBm
PLO = 0dBm
PLO = -3dBm
1600150014001300
PRF = -5dBm
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
MAX19993 toc11
70
60
2RF - 2LO RESPONSE (dBc)
50
1200 1700
3RF - 3LO RESPONSE vs. RF FREQUENCY
95
MAX19993 toc14
85
75
3RF - 3LO RESPONSE (dBc)
65
VCC = 4.75V, 5.0V, 5.25V
RF FREQUENCY (MHz)
VCC = 5.0V
VCC = 5.25V
PRF = -5dBm
MAX19993 toc12
1600150014001300
PRF = -5dBm
MAX19993 toc15
VCC = 4.75V
55
1200 1700
RF FREQUENCY (MHz)
INPUT P
17
16
(dBm)
1dB
15
INPUT P
14
13
1200 1700
vs. RF FREQUENCY
1dB
TC = +85°C
TC = -40°C
RF FREQUENCY (MHz)
TC = +25°C
8
MAX19993 toc16
55
1200 1700
RF FREQUENCY (MHz)
INPUT P
17
16
(dBm)
1dB
15
INPUT P
14
13
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1200 1700
vs. RF FREQUENCY
1dB
RF FREQUENCY (MHz)
1600150014001300
1600150014001300
1600150014001300
1600150014001300
MAX19993 toc17
55
1200 1700
RF FREQUENCY (MHz)
INPUT P
17
16
(dBm)
1dB
15
INPUT P
14
13
1200 1700
vs. RF FREQUENCY
1dB
VCC = 5.25V
VCC = 4.75V
RF FREQUENCY (MHz)
1600150014001300
MAX19993 toc18
VCC = 5.0V
1600150014001300
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). V otherwise noted.)
CC
= 5.0V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
= 0dBm,
LO
= +25°C, unless
TC
MAX19993
CHANNEL ISOLATION vs. RF FREQUENCY
60
55
50
45
40
CHANNEL ISOLATION (dB)
35
30
1200 1700
TC = -40°C, +25°C, +85°C
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
0
TC = -40°C
-10
-20
-30
LO LEAKAGE AT IF PORT (dBm)
-40 1060 1560
TC = +25°C
TC = +85°C
LO FREQUENCY (MHz)
CHANNEL ISOLATION vs. RF FREQUENCY
60
55
MAX19993 toc19
50
45
PLO = -6dBm, -3dBm, 0dBm, +3dBm
40
CHANNEL ISOLATION (dB)
35
1600150014001300
30
1200 1700
RF FREQUENCY (MHz)
1600150014001300
MAX19993 toc20
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
0
MAX19993 toc22
-10
PLO = -6dBm
-20
PLO = 0dBm
-30
LO LEAKAGE AT IF PORT (dBm)
-40
1460136012601160
1060 1560
PLO = +3dBm
PLO = -3dBm
1460136012601160
LO FREQUENCY (MHz)
MAX19993 toc23
CHANNEL ISOLATION vs. RF FREQUENCY
60
55
50
45
VCC = 4.75V, 5.0V, 5.25V
40
CHANNEL ISOLATION (dB)
35
30
1200 1700
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
0
VCC = 5.25V
-10
-20
-30
LO LEAKAGE AT IF PORT (dBm)
-40
VCC = 4.75V
VCC = 5.0V
1060 1560
LO FREQUENCY (MHz)
MAX19993 toc21
1600150014001300
MAX19993 toc24
1460136012601160
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
40
30
RF-TO-IF ISOLATION (dB)
20
1200 1700
TC = +85°C
TC = +25°C
RF FREQUENCY (MHz)
TC = -40°C
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
MAX19993 toc25
40
30
RF-TO-IF ISOLATION (dB)
20
1600150014001300
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1200 1700
RF FREQUENCY (MHz)
1600150014001300
MAX19993 toc26
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
40
30
RF-TO-IF ISOLATION (dB)
20
1200 1700
VCC = 4.75V, 5.0V, 5.25V
RF FREQUENCY (MHz)
MAX19993 toc27
1600150014001300
9
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). V otherwise noted.)
CC
= 5.0V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
= 0dBm,
LO
= +25°C, unless
TC
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
MAX19993
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70 1050 1600
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
TC = +85°C
TC = +25°C
TC = -40°C
TC = +25°C
1490138012701160
TC = -40°C
TC = +85°C
-20
MAX19993 toc28
-30
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70 1050 1600
-10
MAX19993 toc31
PLO = +3dBm
-20
-30
-40
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
PLO = +3dBm
PLO = 0dBm
PLO = -6dBm
PLO = -3dBm
1490138012701160
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
PLO = 0dBm
PLO = -6dBm
PLO = -3dBm
-20
MAX19993 toc29
-30
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70 1050 1600
-10
VCC = 5.0V
MAX19993 toc32
-20
-30
VCC = 4.75V
-40
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
VCC = 4.75V, 5.0V, 5.25V
1490138012701160
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
VCC = 5.25V
MAX19993 toc30
MAX19993 toc33
2LO LEAKAGE AT RF PORT (dBm)
-50
-60 1050 1600
LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
70
TC = +25°C
60
50
LO SWITCH ISOLATION (dB)
40
1050 1600
LO FREQUENCY (MHz)
TC = -40°C
TC = +85°C
10
2LO LEAKAGE AT RF PORT (dBm)
-50
1490138012701160
-60 1050 1600
LO FREQUENCY (MHz)
1490138012701160
LO SWITCH ISOLATION vs. LO FREQUENCY
70
MAX19993 toc34
60
PLO = -6dBm, -3dBm, 0dBm, +3dBm
50
LO SWITCH ISOLATION (dB)
1490138018701160
40
1050 1600
LO FREQUENCY (MHz)
1490138018701160
2LO LEAKAGE AT RF PORT (dBm)
-50
-60 1050 1600
LO SWITCH ISOLATION vs. LO FREQUENCY
70
MAX19993 toc35
60
50
LO SWITCH ISOLATION (dB)
40
1050 1600
1490138012701160
LO FREQUENCY (MHz)
MAX19993 toc36
VCC = 4.75V, 5.0V, 5.25V
1490138018701160
LO FREQUENCY (MHz)
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). V otherwise noted.)
CC
= 5.0V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
= 0dBm,
LO
= +25°C, unless
TC
MAX19993
RF PORT RETURN LOSS
vs. RF FREQUENCY
0
5
10
15
20
RF PORT RETURN LOSS (dB)
25
30
1200 1700
PLO = -6dBm, -3dBm, 0dBm, +3dBm
RF FREQUENCY (MHz)
IF = 140MHZ
LO SELECTED PORT RETURN LOSS
vs. LO FREQUENCY
0
PLO = 0dBm
10
PLO = +3dBm
20
30
LO SELECTED PORT RETURN LOSS (dB)
PLO = -6dBm
40
1000 2000
PLO = -3dBm
LO FREQUENCY (MHz)
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
MAX19993 toc37
1600150014001300
5
10
15
20
IF PORT RETURN LOSS (dB)
25
30
LO = 1560MHz
LO = 1060MHz
50 500
VCC = 4.75V, 5.0V, 5.25V
MAX19993 toc38
LO = 1310MHz
410320230140
IF FREQUENCY (MHz)
LO UNSELECTED PORT RETURN LOSS
vs. LO FREQUENCY
0
MAX19993 toc39
1800160014001200
10
PLO = -6dBm, -3dBm, 0dBm, +3dBm
20
30
40
LO UNSELECTED PORT RETURN LOSS (dB)
50
1000 2000
LO FREQUENCY (MHz)
1800160014001200
MAX19993 toc40
SUPPLY CURRENT vs. TEMPERATURE (TC)
370
360
350
340
330
SUPPLY CURRENT (mA)
320
310
VCC = 5.25V
-40 85 TEMPERATURE (°C)
VCC = 5.0V
VCC = 4.75V
MAX19993 toc41
603510-15
11
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). V otherwise noted.)
CC
= 3.3V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
= 0dBm,
LO
= +25°C, unless
TC
CONVERSION GAIN vs. RF FREQUENCY
8
TC = -40°C
MAX19993
7
6
CONVERSION GAIN (dB)
5
4
TC = +85°C
1200 1700
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
27
26
25
24
INPUT IP3 (dBm)
23
22
21
TC = +85°C
TC = -40°C
1200 1700
RF FREQUENCY (MHz)
VCC = 3.3V
TC = +25°C
1600150014001300
VCC = 3.3V
= -5dBm/TONE
P
RF
TC = +25°C
1600150014001300
8
MAX19993 toc42
MAX19993 toc45
7
6
CONVERSION GAIN (dB)
5
4
27
26
25
24
INPUT IP3 (dBm)
23
22
21
CONVERSION GAIN vs. RF FREQUENCY
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1200 1700
RF FREQUENCY (MHz)
1600150014001300
INPUT IP3 vs. RF FREQUENCY
PLO = +3dBm
PLO = -6dBm
1200 1700
RF FREQUENCY (MHz)
VCC = 3.3V
= -5dBm/TONE
P
RF
PLO = 0dBm
PLO = -3dBm
1600150014001300
8
MAX19993 toc43
MAX19993 toc46
7
6
CONVERSION GAIN (dB)
5
4
27
26
25
24
INPUT IP3 (dBm)
23
22
21
CONVERSION GAIN vs. RF FREQUENCY
VCC = 3.6V
VCC = 3.3V
VCC = 3.0V
1200 1700
RF FREQUENCY (MHz)
1600150014001300
INPUT IP3 vs. RF FREQUENCY
VCC = 3.6V
VCC = 3.0V
1200 1700
RF FREQUENCY (MHz)
PRF = -5dBm/TONE
VCC = 3.3V
1600150014001300
MAX19993 toc44
MAX19993 toc47
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
NOISE FIGURE (dB)
9
8
7
TC = +85°C
TC = -40°C
1200 1700
RF FREQUENCY (MHz)
12
VCC = 3.3V
TC = +25°C
1600150014001300
MAX19993 toc48
NOISE FIGURE (dB)
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
PLO = -6dBm, -3dBm, 0dBm, +3dBm
8
7
1200 1700
RF FREQUENCY (MHz)
VCC = 3.3V
1600150014001300
MAX19993 toc49
NOISE FIGURE (dB)
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
8
7
1200 1700
VCC = 3.0V, 3.3V, 3.6V
1600150014001300
RF FREQUENCY (MHz)
MAX19993 toc50
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). V otherwise noted.)
CC
= 3.3V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
LO
= 0dBm,
+25°C, unless
TC
MAX19993
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
70
60
2RF - 2LO RESPONSE (dBc)
50
TC = +85°C
TC = +25°C
1200 1700
RF FREQUENCY (MHz)
P
TC = -40°C
3RF - 3LO RESPONSE vs. RF FREQUENCY
85
P
75
65
3RF - 3LO RESPONSE (dBc)
55
1200 1700
TC = +85°C
TC = -40°C
RF FREQUENCY (MHz)
= +25°C
T
C
VCC = 3.3V
= -5dBm
RF
1600150014001300
VCC = 3.3V
= -5dBm
RF
1600150014001300
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
MAX19993 toc51
70
60
2RF - 2LO RESPONSE (dBc)
50
1200 1700
3RF - 3LO RESPONSE vs. RF FREQUENCY
85
MAX19993 toc54
75
65
3RF - 3LO RESPONSE (dBc)
55
1200 1700
VCC = 3.3V
= -5dBm
P
RF
PLO = 0dBm
RF FREQUENCY (MHz)
PLO = -6dBm, -3dBm, 0dBm, +3dBm
RF FREQUENCY (MHz)
PLO = +3dBm
PLO = -3dBm
PLO = -6dBm
1600150014001300
VCC = 3.3V
= -5dBm
P
RF
1600150014001300
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
MAX19993 toc52
70
60
2RF - 2LO RESPONSE (dBc)
50
1200 1700
3RF - 3LO RESPONSE vs. RF FREQUENCY
85
MAX19993 toc55
75
65
3RF - 3LO RESPONSE (dBc)
55
1200 1700
VCC = 3.6V
VCC = 3.3V
RF FREQUENCY (MHz)
VCC = 3.6V
VCC = 3.3V
RF FREQUENCY (MHz)
PRF = -5dBm
MAX19993 toc53
VCC = 3.0V
1600150014001300
PRF = -5dBm
MAX19993 toc56
VCC = 3.0V
1600150014001300
INPUT P
15
14
13
(dBm)
1dB
12
INPUT P
11
10
1200 1700
vs. RF FREQUENCY
1dB
TC = +85°C
TC = -40°C
RF FREQUENCY (MHz)
= +25°C
T
C
VCC = 3.3V
1600150014001300
MAX19993 toc57
INPUT P
15
14
13
(dBm)
1dB
12
INPUT P
11
10
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1200 1700
vs. RF FREQUENCY
1dB
RF FREQUENCY (MHz)
VCC = 3.3V
1600150014001300
MAX19993 toc58
INPUT P
15
14
13
(dBm)
1dB
12
INPUT P
11
10
1200 1700
vs. RF FREQUENCY
1dB
VCC = 3.6V
VCC = 3.0V
RF FREQUENCY (MHz)
VCC = 3.3V
MAX19993 toc59
1600150014001300
13
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). V otherwise noted.)
CC
= 3.3V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
= 0dBm,
LO
+25°C, unless
TC
CHANNEL ISOLATION vs. RF FREQUENCY
55
MAX19993
50
45
CHANNEL ISOLATION (dB)
40
1200 1700
TC = +25°C
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-10 TC = -40°C
= +25°C
T
C
-20
TC = +85°C
-30
LO LEAKAGE AT IF PORT (dBm)
VCC = 3.3V
TC = -40°C
= +85°C
T
C
1600150014001300
VCC = 3.3V
CHANNEL ISOLATION vs. RF FREQUENCY
55
MAX19993 toc60
50
45
CHANNEL ISOLATION (dB)
40
1200 1700
-10
MAX19993 toc63
-20
-30
PLO = -6dBm, -3dBm, 0dBm, +3dBm
LO LEAKAGE AT IF PORT (dBm)
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1600150014001300
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
VCC = 3.3V
CHANNEL ISOLATION vs. RF FREQUENCY
55
MAX19993 toc61
50
45
CHANNEL ISOLATION (dB)
40
1200 1700
-10
MAX19993 toc64
-20
-30
LO LEAKAGE AT IF PORT (dBm)
VCC = 3.0V, 3.3V, 3.6V
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
VCC = 3.6V
VCC = 3.3V
VCC = 3.0V
MAX19993 toc62
1600150014001300
MAX19993 toc65
-40
1060 1560
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
40
30
RF-TO-IF ISOLATION (dB)
20
1200 1700
TC = +85°C
TC = -40°C
RF FREQUENCY (MHz)
T
C
14
= +25°C
1460136012601160
VCC = 3.3V
1600150014001300
-40 1060 1560
50
MAX19993 toc66
40
30
RF-TO-IF ISOLATION (dB)
20
1200 1700
1460136012601160
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1600150014001300
RF FREQUENCY (MHz)
-40 1060 1560
50
MAX19993 toc67
40
30
RF-TO-IF ISOLATION (dB)
20
1200 1700
1460136012601160
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19993 toc68
VCC = 3.0V, 3.3V, 3.6V
1600150014001300
RF FREQUENCY (MHz)
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). V otherwise noted.)
CC
= 3.3V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
LO
= 0dBm,
+25°C, unless
TC
MAX19993
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70 1050 1600
LO FREQUENCY (MHz)
TC = +25°C
TC = -40°C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20 TC = +25°C
-30
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
-60
1050 1600
TC = -40°C
TC = +85°C
LO FREQUENCY (MHz)
VCC = 3.3V
TC = +85°C
1490138012701160
VCC = 3.3V
1490138012701160
-20
MAX19993 toc69
-30
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70 1050 1600
-10
MAX19993 toc72
-20
-30
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
-60 1050 1600
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
VCC = 3.3V
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
PLO = -6dBm
1490138012701160
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
VCC = 3.3V
PLO = -6dBm
PLO = -3dBm
PLO = +3dBm
PLO = 0dBm
1490138012701160
LO FREQUENCY (MHz)
-20
MAX19993 toc70
-30
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70 1050 1600
-10
MAX19993 toc73
-20
VCC = 3.6V
-30
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
-60 1050 1600
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19993 toc71
VCC = 3.6V
VCC = 3.3V
VCC = 3.0V
1490138012701160
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19993 toc74
VCC = 3.3V
VCC = 3.0V
1490138012701160
LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
70
TC = +25°C
60
50
LO SWITCH ISOLATION (dB)
40
1050 1600
TC = +85°C
LO FREQUENCY (MHz)
TC = -40°C
VCC = 3.3V
1490138012701160
LO SWITCH ISOLATION vs. LO FREQUENCY
70
MAX19993 toc75
60
50
LO SWITCH ISOLATION (dB)
40
1050 1600
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1490138012701160
LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
70
MAX19993 toc76
60
50
LO SWITCH ISOLATION (dB)
40
1050 1600
MAX19993 toc77
VCC = 3.0V, 3.3V, 3.6V
1490138012701160
LO FREQUENCY (MHz)
15
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit (see Table 1). V otherwise noted.)
CC
= 3.3V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
LO
= 0dBm,
+25°C, unless
TC
0
5
MAX19993
10
15
20
RF PORT RETURN LOSS (dB)
25
30
1200 1700
0
10
20
RF PORT RETURN LOSS
vs. RF FREQUENCY
VCC = 3.3V
IF = 140MHZ
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1600150014001300
RF FREQUENCY (MHz)
LO SELECTED PORT RETURN LOSS
vs. LO FREQUENCY
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
MAX19993 toc78
MAX19993 toc80
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
5
10
IF PORT RETURN LOSS (dB)
15
20
LO = 1560MHz
50 500
IF FREQUENCY (MHz)
VCC = 3.0V, 3.3V, 3.6V
LO = 1310MHz
LO = 1060MHz
LO UNSELECTED PORT RETURN LOSS
vs. LO FREQUENCY
0
10
20
30
PLO = -6dBm, -3dBm, 0dBm, +3dBm
MAX19993 toc79
410320230140
VCC = 3.3V
MAX19993 toc81
16
30
LO SELECTED PORT RETURN LOSS (dB)
40
1000 2000
LO FREQUENCY (MHz)
310
300
290
280
270
SUPPLY CURRENT (mA)
260
250
240
40
LO UNSELECTED PORT RETURN LOSS (dB)
1800160014001200
50
1000 2000
SUPPLY CURRENT vs. TEMPERATURE (TC)
VCC = 3.6V
VCC = 3.3V
-40 85 TEMPERATURE (°C)
VCC = 3.0V
603510-15
1800160014001200
LO FREQUENCY (MHz)
MAX19993 toc82
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Pin Configuration
MAX19993
TOP VIEW
N.C.
LO_ADJ_M
V
IND_EXTM
IFM-
IFM+
GND
IFM_SET
V
LO2
GND
GND
GND
28
29
30
CC
31
32
33
34
35
36
CC
MAX19993
+
1 2 3 4 5
RFMAIN
TAPMAIN
GND
CC
V
TQFN
(6mm × 6mm)
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
LOSEL
GND
6 7 8 9
CC
V
GND
VCCGND
EXPOSED PAD
GND
TAPDIV
192021222324252627
LO1
RFDIV
18
17
16
15
14
13
12
11
10
N.C.
LO_ADJ_D
V
CC
IND_EXTD
IFD-
IFD+
GND
IFD_SET
V
CC
17
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch
Pin Description
PIN NAME FUNCTION
1 RFMAIN
2 TAPMAIN
3, 5, 7, 12, 20, 22, 24, 25, 26,
MAX19993
4, 6, 10, 16,
21, 30, 36
34
8 TAPDIV
9 RFDIV
11 IFD_SET
13, 14 IFD+, IFD-
15 IND_EXTD
17 LO_ADJ_D
18, 28 N.C. No Connection. Not internally connected.
19 LO1
23 LOSEL Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.
27 LO2
29 LO_ADJ_M
31 IND_EXTM
32, 33 IFM-, IFM+
35 IFM_SET
— EP
GND Ground
V
CC
Main Channel RF Input. Internally matched to 50I. Requires an input DC-blocking capacitor.
Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033FF capacitors as close as possible to the pin with the smaller value capacitor closer to the part.
Power Supply. Bypass to GND with capacitors as close as possible to the pin, as shown in the Typical Application Circuit.
Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033FF capacitors as close as possible to the pin with the smaller value capacitor closer to the part.
Diversity Channel RF Input. Internally matched to 50I. Requires an input DC-blocking capacitor.
IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity IF amplifier. See the Typical Application Circuit.
Diversity Mixer Differential IF Output +/-. Connect pullup inductors from each of these pins to V See the Typical Application Circuit.
Diversity External Inductor Connection. Connect to ground through a 0I resistor (0603) as close as possible to the pin. For improved RF-to-IF and LO-to-IF isolation, contact the factory for details.
LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity LO amplifier. See the Typical Application Circuit.
Local Oscillator 1 Input. This input is internally matched to 50I. Requires an input DC-blocking capacitor.
Local Oscillator 2 Input. This input is internally matched to 50I. Requires an input DC-blocking capacitor.
LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main LO amplifier. See the Typical Application Circuit.
Main External Inductor Connection. Connect to ground through a 0I resistor (0603) as close as possible to the pin. For improved RF-to-IF and LO-to-IF isolation, contact the factory for details.
Main Mixer Differential IF Output -/+. Connect pullup inductors from each of these pins to V the Typical Application Circuit.
IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main IF amplifier. See the Typical Application Circuit.
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses mul­tiple ground vias to provide heat transfer out of the device into the PCB ground planes. These mul­tiple ground vias are also required to achieve the noted RF performance.
CC
CC
. See
.
18
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Detailed Description
The MAX19993 is a dual-channel downconverter designed to provide up to 6.4dB of conversion gain, +27dBm input IP3, 15.4dBm 1dB input compression point, and a noise figure of 9.8dB.
In addition to its high-linearity performance, the device achieves a high level of component integration. It inte­grates two double-balanced mixers for two-channel downconversion. Both the main and diversity channels include a balun and matching circuitry to allow 50I single-ended interfaces to the RF ports and the two LO ports. An integrated single-pole/double-throw (SPDT) switch provides 50ns switching time between the two LO inputs with 57dB of LO-to-LO isolation and -38dBm of LO leakage at the RF port. Furthermore, the integrated LO buffers provide a high drive level to each mixer core, reducing the LO drive required at the device‘s inputs to a range of -6dBm to +3dBm. The IF ports for both channels incorporate differential outputs for downcon­version, which is ideal for providing enhanced 2RF - 2LO performance.
The device is specified to operate over an RF input range of 1200MHz to 1700MHz, an LO range of 1000MHz to 1560MHz, and an IF range of 50MHz to 500MHz. The external IF components set the lower frequency range. See the Typical Operating Characteristics section for details. Operation beyond these ranges is possible; see the Typical Operating Characteristics section for additional information. Although this device is optimized for low­side LO injection applications, it can operate in high­side LO injection modes as well. However, perfor-
mance degrades as f the factory for a variant with increased high-side LO performance.
The RF input ports of both the main and diversity
channels are internally matched to 50I, requiring no
external matching components. A DC-blocking capacitor
is required as the input is internally DC shorted to ground
through the on-chip balun. The RF port input return
loss is typically better than 19dB over the 1400MHz to
1700MHz RF frequency range.
continues to increase. Contact
LO
RF Port and Balun
If LOSEL is connected directly to a logic source, then voltage MUST be applied to V is applied to LOSEL to avoid damaging the part. Alternatively, a 1kI resistor can be placed in series at the LOSEL to limit the input current in applications where LOSEL is applied before V
The main and diversity channels incorporate a two-stage LO buffer that allows for a wide-input power range for the LO drive. The on-chip low-loss baluns, along with LO buffers, drive the double-balanced mixers. All interfacing and matching components from the LO inputs to the IF outputs are integrated on-chip.
The core of the device’s dual-channel downconverter consists of two double-balanced, high-performance passive mixers. Exceptional linearity is provided by the large LO swing from the on-chip LO buffers. When combined with the integrated IF amplifiers, the cascaded IIP3, 2RF - 2LO rejection, and noise-figure performance are typically +27dBm, 72dBc, and 9.8dB, respectively.
The device has a 50MHz to 500MHz IF frequency range, where the low-end frequency depends on the frequency response of the external IF components. Note that these differential ports are ideal for providing enhanced IIP2 performance. Single-ended IF applications require a 4:1 (impedance ratio) balun to transform the 200I differential IF impedance to a 50I single-ended system. After the balun, the return loss is typically 15dB. The user can use a differential IF amplifier on the mixer IF ports, but a DC block is required on both IFD+/IFD- and IFM+/ IFM- ports to keep external DC from entering the IF ports of the mixer.
LO Inputs, Buffer, and Balun
before digital logic
CC
.
CC
High-Linearity Mixer
Differential IF
MAX19993
19
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50I.
input return loss is typically better than 19dB over the
1400MHz to 1700MHz RF frequency range and return
the entire LO range. RF and LO inputs require only
DC-blocking capacitors for interfacing.
MAX19993
The IF output impedance is 200I (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance to a 50I single-ended
output. See the Typical Application Circuit.
Reduced-Power Mode
Each channel of the device has two pins (LO_ADJ_D/
LO_ADJ_M, IFD_SET/IFM_SET) that allow external
for these resistors are given in Table 1. Larger value
expense of some performance loss. If Q1% resistors are
not readily available, substitute with Q5% resistors.
Significant reductions in power consumption can also
supply voltage. Doing so reduces the overall power
consumption by approximately 46%. See the 3.3V Supply
curves in the Typical Operating Characteristics section.
IND_EXT_ Inductors
The default application circuit calls for connecting
IND_EXT_ (pins 15 and 31) to ground through a 0I
resistor (0603) as close as possible to the pin. For
improved RF-to-IF and LO-to-IF isolation, contact the
factory for details.
Layout Considerations
A properly designed PCB is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. The load impedance presented to the mixer must be such that any capacitance from both IF- and IF+ to ground does not exceed several picofarads. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PCB exposed pad MUST be connected to the ground plane of the PCB. It is suggested that multiple vias be used to connect this pad to the lower-level ground planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on the bottom of the device package to the PCB. The MAX19993 evaluation kit can be used as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for high­frequency circuit stability. Bypass each V TAPMAIN/TAPDIV with the capacitors shown in the Typical Application Circuit. See Table 1 for component values. Place the TAPMAIN/TAPDIV bypass capacitors to ground within 100 mils of the pin.
pin and
CC
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19993’s 36-pin TQFN­EP package provides a low thermal-resistance path to the die. It is important that the PCB on which the device is mounted be designed to conduct heat from the EP. In addition, provide the EP with a low-inductance path to electrical ground. The EP MUST be soldered to a ground plane on the PCB, either directly or through an array of plated via holes.
20
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Typical Application Circuit
V
CC
LO1LO2 LO SELECT
C15
MAX19993
IF MAIN OUTPUT
C21 C20C19
V
CC
V
CC
IF DIV OUTPUT
T24:1
C12 C10C11
L4L5L2L1
R6
C14C16
LO2
GND
GND
GND
LOSEL
GND
VCCGND
LO1
EXPOSED PAD
GND
TAPDIV
C7
192021222324252627
RFDIV
N.C.
18
LO_ADJ_D
17
V
CC
16
IND_EXTD
15
L6
IFD-
14
IFD+
13
GND
12
IFD_SET
11
V
CC
10
C9
C8
V
CC
C13
V
CC
R5
R4
4:1T1
N.C.
28
LO_ADJ_M
IND_EXTM
L3
IFM-
IFM+
GND
IFM_SET
C18
29
V
CC
30
MAX19993
31
32
33
34
35
V
CC
36
+
CC
V
6 7 8 9
CC
V
GND
V
CC
1 2 3 4 5
GND
RFMAIN
TAPMAIN
C2
C1
L7 L8
RF MAIN INPUT RF DIV INPUT
V
CC
C3 C4 C5 C6
V
CC
R2
R3
C17
V
CC
R1
Table 1. Component Values
DESIGNATION QTY DESCRIPTION COMPONENT SUPPLIER
C1, C2, C7, C8,
C14, C16
C3, C6 2 C4, C5 2 0402, not used —
C9, C13, C15,
C17, C18
6 39pF microwave capacitors (0402) Murata Electronics North America, Inc.
0.033FF microwave capacitors (0603)
5
0.01FF microwave capacitors (0402)
Murata Electronics North America, Inc.
Murata Electronics North America, Inc.
21
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Table 1. Component Values (continued)
DESIGNATION QTY DESCRIPTION COMPONENT SUPPLIER
C10, C11, C12,
C19, C20, C21
L1, L2, L4, L5 4 330nH wire-wound high-Q inductors (0805) Coilcraft, Inc.
L3, L6 2
MAX19993
L7, L8 2 Additional tuning elements (0402, not used) —
R1, R4 2
R2, R5 2
R3, R6 2
T1, T2 2 4:1 transformers (200:50) TC4-1W-7A Mini-Circuits
U1 1 MAX19993 IC (36 TQFN-EP) Maxim Integrated Products, Inc.
6 150pF microwave capacitors (0603) Murata Electronics North America, Inc.
0I resistors (0603). For improved RF-to-IF and LO-to-IF isolation, contact factory for details.
681I ±1% resistors (0402). Used for V applications. Larger values can be used to reduce power at the expense of some performance loss.
681I ±1% resistors (0402). Used for V applications.
1.82kI ±1% resistors (0402). Used for V applications. Larger values can be used to reduce power at the expense of some performance loss.
1.43kI ±1% resistors (0402). Used for V applications.
0I resistors (1206)
= 5.0V
CC
= 3.3V
CC
CC
CC
= 5.0V
= 3.3V
Digi-Key Corp.
Digi-Key Corp.
Digi-Key Corp.
Digi-Key Corp.
Chip Information
PROCESS: SiGe BiCMOS
22
Package Information
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. Note that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status.
PACKAGE
TYPE
36 Thin QFN-EP T3666+2
PACKAGE
CODE
OUTLINE
NO.
21-0141 90-0049
LAND
PATTERN
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Revision History
MAX19993
REVISION
NUMBER
0 6/10 Initial release —
REVISION
DATE
DESCRIPTION
PAGES
CHANGED
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 23
©
2010 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.
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