Rainbow Electronics MAX16915 User Manual

19-4964; Rev 0; 9/09

Typical Operating Circuit

Ideal Diode, Reverse-Battery, and Overvoltage Protection

Switch/Limiter Controllers with External MOSFETs

General Description

The MAX16914/MAX16915 low-quiescent-current over­voltage and reverse-battery protection controllers are
designed for automotive and industrial systems that
must tolerate high-voltage transient and fault conditions.
These conditions include load dumps, voltage dips, and
reversed input voltages. The controllers monitor the input
voltage on the supply line and control two external pFETs
to isolate the load from the fault condition. The external
pFETs are turned on when the input supply exceeds

4.5V and stay on up to the programmed overvoltage
threshold. During high-voltage fault conditions, the con­trollers regulate the output voltage to the set upper
threshold voltage (MAX16915), or switch to high resis­tance (MAX16914) for the duration of the overvoltage
transient to prevent damage to the downstream circuitry.
The overvoltage event is indicated through an active-low,
open-drain output, OV.

The reverse-battery pFET behaves as an ideal diode,
minimizing the voltage drop when forward biased. Under
reverse bias conditions, the pFET is turned off, prevent­ing a downstream tank capacitor from being discharged
into the source.

Shutdown control turns off the IC completely, discon­necting the input from the output and disconnecting
TERM from its external resistor-divider to reduce the
quiescent current to a minimum.

Both devices are available in a 10-pin FMAXM package
and operate over the automotive -40NC to +125NC tem­perature range.

Features

S 4.5V to 19V Input Voltage Operation
S Transient Voltage Protection Up to +44V and -75V
S Adjustable Overvoltage Limit with Resistor-

Divider Shut Off in Shutdown

S Ideal Diode Reverse-Battery Protection
S Low Voltage Drop When Used with Properly Sized

External pFETs

S Back-Charge Prevention
S Overvoltage Indicator
S Shutdown Input
S 29µA Low Operating Current
S 6µA Low Shutdown Current
S Thermal-Overload Protection
S -40NC to +125NC Operating Temperature Range
S Small 10-Pin µMAX Package
S AEC-Q100 Qualified

Ordering Information

PART TEMP RANGE PIN-PACKAGE

MAX16914AUB/V+ -40NC to +125NC 10 FMAX
MAX16915AUB/V+ -40NC to +125NC 10 FMAX

+Denotes a lead(Pb)-free/RoHS-compliant package.
/V denotes an automotive qualified device.

MAX16914/MAX16915

Applications

Automotive

Industrial

Pin Configuration

TOP VIEW

+

1

V

CC

2

GATE1

SENSE IN

µMAX is a registered trademark of Maxim Integrated Products, Inc.

_______________________________________________________________ Maxim Integrated Products 1

3

4

5

MAX16914
MAX16915

10

9

8

7

6

GATE2

SENSE OUT

TERM

SETSHDN

GNDOV

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.

V

BATT

OFF

V

CC

MAX16914
MAX16915

GATE1

SENSE IN

ON

SHDN

GND

GATE2

SENSE OUT

OV

TERM

SET

P2P1

V

OUT

OV

R1

R2

Ideal Diode, Reverse-Battery, and Overvoltage Protection
Switch/Limiter Controllers with External MOSFETs

ABSOLUTE MAXIMUM RATINGS

VCC, SENSE OUT, TERM, SHDN, OV to GND for

P 400ms ............................................................. -0.3V to +44V

VCC, SENSE OUT, TERM, SHDN, OV to GND

for P 90s .............................................................-0.3V to +28V

VCC, SENSE OUT, TERM, SHDN, OV to GND .....-0.3V to +20V

SENSE IN to GND for P 2ms ..................................-75V to +44V

SENSE IN to GND for P 90s ..................................-18V to +44V

SENSE IN to GND .................................................-0.3V to +20V

GATE1, GATE2 to VCC ..........................................-16V to +0.3V

Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-

layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

(VCC = 14V, C
values are at TA = +25NC.) (Note 2)

GATE1

= 32nF, C

= 32nF, SHDN = high, TA = -40NC to +125NC, unless otherwise noted. Typical

GATE2

GATE1, GATE2 to GND ........................... -0.3V to (VCC + 0.3V)

SET to GND .............................................................-0.3V to +8V

Continuous Power Dissipation (TA = +70NC)
10-Pin FMAX (derate 8.8mW/NC above TA = +70NC)

(Note 1) .......................................................................707mW

Operating Temperature Range ........................ -40NC to +125NC

Junction Temperature .....................................................+150NC

Storage Temperature Range ............................ -65NC to +150NC

Lead Temperature (soldering, 10s) ................................+300NC

MAX16914/MAX16915

Operating Voltage Range V

Shutdown Supply Current
(I

SENSE IN

I

SHDN

Quiescent Supply Current
(I

SENSE IN

I

SHDN

VCC Undervoltage Lockout V

VCC Undervoltage-Lockout
Hysteresis

SET Threshold Voltage V

SET Threshold Voltage
Hysteresis

SET Input Current I

SHDN Low Threshold V
SHDN High Threshold V
SHDN Pulldown Current I

VCC to GATE Output Low
Voltage

VCC to GATE Clamp Voltage V

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

(Note 3) 4.5 19 V

SHDN = low,
V

SENSE OUT

V

TERM

SHDN = high

V

CC

V

SET

V

SET

V

SHDN

VCC = 14V 6.25 7.5 8.5 V

VCC = 42V 14 V

+ I

+ I

+ I

SENSE OUT

)

VCC

+ I

SENSE OUT

)

VCC

+ IOV +

+ IOV +

CC

I

SHDN

I

UVLO

SETTH

V

SETHY

SET

SHDNL

SHDNH

SHDN

V

GVCC1

GVCC2

Q

TA = +25NC 6.0 12

TA = +85NC (Note

= 0V,

= 0V

rising, V

rising -3% +1.20 +3% V

= 1V 0.02 0.2 FA

SET

= 14V, internally pulled to GND 0.5 1.0 FA

3)

TA = +125NC
(Note 3)

TA = +25NC 29 53

TA = +85NC (Note

3)

TA = +125NC
(Note 3)

= 1V , SHDN = high 4.06 4.35 V

1.4 V

6.1 12

6.2 12

30 55

31 57

8 %

4 %

0.4 V

FA

FA

2 ______________________________________________________________________________________

Ideal Diode, Reverse-Battery, and Overvoltage Protection

Switch/Limiter Controllers with External MOSFETs

ELECTRICAL CHARACTERISTICS (continued)

(VCC = 14V, C
values are at TA = +25NC.) (Note 2)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

TERM On-Resistance R
TERM Output Current I

Back-Charge Voltage Fault
Threshold

Back-Charge Voltage Threshold
Hysteresis

Back-Charge Turn-Off Time
(GATE1)

Back-Charge Recovery Time
(GATE1)

GATE2 Turn-Off Time

GATE2 Turn-On Time

Startup Response Time
(V

Rising)

SHDN

Startup Response Time
(VCC Rising)

Reverse-Battery Voltage Turn-Off
Time/UVLO Turn-Off Time

Thermal-Shutdown Temperature +170 NC
Thermal-Shutdown Hysteresis 20 NC

OV Output Low Voltage V
OV Open-Drain Leakage Current I

SENSE IN Input Current I
SENSE OUT Input Current I
SET to OV Output Low

Propagation Delay

Note 2: All parameters are production tested at TA = +25NC. Limits over the operating temperature range are guaranteed by

design and characterization.

Note 3: Guaranteed by design and characterization.
Note 4: The back-charge voltage, VBC, is defined as the voltage at SENSE OUT minus the voltage at SENSE IN.
Note 5: Defined as the time from when VBC exceeds V
Note 6: Defined as the time from when VBC falls below V
Note 7: Defined as the time from when V
Note 8: Defined as the time from when V
Note 9: The external pFETs can turn on t
Note 10: Defined as the time from when VCC exceeds the undervoltage-lockout threshold (4.3V max) to when V

fall below 1V.

Note 11: Defined as the time from when V

GATE1

= 32nF, C

= 32nF, SHDN = high, TA = -40NC to +125NC, unless otherwise noted. Typical

GATE2

TERM

TERM

V

BCTH

V

BCHY

t

BC

SHDN = high 150 500
SHDN = low, V

V

SENSE OUT

V

SENSE OUT

= 14V (Note 4) 18 25 32 mV

= 14V 50 mV

VCC = 9.5V, V
V

SENSE OUT

stepped from 4.9V to 9.5V

= 0V 1.0 FA

TERM

SENSE IN

= 9V,

6 10 Fs

(Note 5)

t

BCREC

VCC = 9.5V, V
V

SENSE OUT

SENSE IN

stepped from 9.5V to 4.9V

= 9V,

18 30 Fs

(Note 6)

t

START1

t

START2

t

REVERSE

VCC = 9.5V, V

1.5V (Note 7)

VCC = 9.5V, V
1V (Note 8)

VCC = 9.5V, from V
V

falling (Note 9)

GATE_

VCC rising from 2V to 4.5V, SHDN =
high (Note 10)

VCC and V
to 3.25V, V

rising from 1V to

SET

falling from 1.5V to

SET

SHDN

SENSE IN
SENSE OUT

falling from 4.25V

= 4.25V

rising to

3 Fs

20 Fs

100 Fs

0.150 ms

30 Fs

(Note 11)

I

OVBL

OVB

SENSE IN

SENSE OUTVSHDN

t

OVBPD

exceeds V

SET

falls below V

SET

after the IC is powered up and all input conditions are valid.

START

falls below V

CC

= 600FA 0.4 V

SINK

V

= 1.0V 1.0 FA

SET

V

= 0/14V 1 5 FA

SHDN

= 0/14V 2 5 FA

VCC = 9.5V, V

1.5V to V

OV

(25mV typ) to when V

BCTH

BCTH

(1.20V typ) to when V

SETTH

SETTH

SENSE OUT

rising from 1V to

SET

falling

GATE1

- 50mV to when V

GATE1

GATE2

- 5% (1.14V typ) to when V

- 25mV to when V

3 Fs

exceeds VCC - 3.5V.

falls below VCC - 3.5V.

exceeds VCC - 3.5V.

falls below VCC - 3.5V.

GATE2

reaches VCC - 1.75V.

GATE1

GATE1

and V

I

GATE2

MAX16914/MAX16915

_______________________________________________________________________________________ 3