The MAX15009 includes a 300mA LDO regulator, a
switched output, and an overvoltage protection (OVP)
controller to protect downstream circuits from high-voltage load dump. The MAX15011 includes only the 300mA
LDO regulator and switched output. Both devices operate
over a wide supply voltage range from 5V to 40V and are
able to withstand load-dump transients up to 45V. The
MAX15009/MAX15011 feature short-circuit and thermalshutdown protection. These devices offer highly integrated power management solutions for automotive
applications such as instrument clusters, climate control,
and a variety of automotive power-supply circuits.
The 300mA LDO regulator consumes 67µA quiescent
current at light loads and is well suited to power
always-on circuits during “key off” conditions. The LDO
features independent enable and hold inputs, as well
as a microprocessor (µP) reset output with adjustable
reset timeout period.
The switched output of the MAX15009/MAX15011
incorporates a low R
DS(ON)
(0.28Ω, typ) pass transistor
switch internally connected to the output of the LDO
regulator. This switch features accurate current-limit
sensing circuitry and is capable of controlling remote
loads. The MAX15009/MAX15011 feature an adjustable
current limit and a programmable delay timer to set the
overcurrent detection blanking time of the switch and
autoretry timeout.
The MAX15009 OVP controller operates with an external
enhancement mode n-channel MOSFET. While the monitored voltage remains below the adjustable threshold, the
MOSFET stays on. When the monitored voltage exceeds
the OVP threshold, the OVP controller quickly turns off the
external MOSFET. The OVP controller is configurable as a
load-disconnect switch or a voltage limiter.
The MAX15009/MAX15011 are available in a thermally
enhanced, 32-pin (5mm x 5mm), TQFN package and are
fully specified over the -40°C to +125°C automotive operating temperature range.
= 5V, CT= open, TA= TJ= -40°C to +125°C, unless otherwise noted. Typical values are at TA= +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(All pins referenced to SGND, unless otherwise noted.)
IN, GATE.................................................................-0.3V to +45V
EN_LDO, EN_SW, EN_PROT ......................-0.3V to (V
IN
+ 0.3V)
SOURCE ......................................................-0.3V to (V
IN
+ 0.3V)
OUT_LDO, FB_LDO, FB_PROT, RESET,
OC_DELAY .........................................................-0.3V to +12V
GATE to SOURCE ..................................................-0.3V to +12V
OUT_SW, ILIM, HOLD ......................-0.3V to (V
OUT_LDO
+ 0.3V)
OUT_SW to OUT_LDO ...........................................-12V to +0.3V
CT to SGND............................................................-0.3V to +12V
SGND to PGND .....................................................-0.3V to +0.3V
IN, OUT_LDO Current .......................................................700mA
= 5V, CT= open, TA= TJ= -40°C to +125°C, unless otherwise noted. Typical values are at TA= +25°C.) (Note 1)
Note 1: Specifications to -40°C are guaranteed by design and not production tested.
Note 2: 1.8V is the minimum limit for proper HOLD functionality.
Note 3: Dropout is defined as V
IN
- V
OUT_LDO
when V
OUT_LDO
is 98% of the value of V
OUT_LDO
for VIN= V
OUT_LDO
+ 1.5V.
Note 4: Maximum output current may be limited by the power dissipation of the package.
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
FB_PROT to GATE Turn-Off
Propagation Delay
GATE Output High VoltageV
GATE Output Pulldown
Current
GATE Charge-Pump
Current
GATE-to-SOURCE Clamp
Voltage
SWITCH
Switch DropoutΔV
Switch Current LimitI
Current-Limit Selector ILIM
Voltage
OC_DELAY Timeout
Threshold
OC_DELAY Timeout Pullup
Current
OC_DELAY Timeout
Pulldown Current
Minimum OC_DELAY
Timeout
EN_SW to OUT_SW
Turn-On Time
EN_SW to OUT_SW
Turn-Off Propagation Delay
I
OC_DELAY_DOWN
t
t
OV
- V
GATE
I
V
OC_DELAY
I
OC_DELAY_UP
OC_DELAY_MIN
GATEPD
I
GATE
V
CLMP
SW
SW_LIM
V
ILIM
t
OV_SW
IN
FB_PROT rising from V
250mV to V
V
SOURCE
R
GATE
V
SOURCE
R
GATE
V
GATE
TH_PROT
= VIN = 5.5V,
to IN = 1MΩ
= VIN; VIN ≥ 14V,
to IN = 1MΩ
= 5V, V
EN_PROT
GATE = SGND45µA
ΔVSW = V
I
OUT_SW
OUT_LDO
= 100mA, V
no external MOSFET
ILIM = OUT_LDO, VIN = 8V170200240
R
= 100kΩ to SGND,
LIM
V
OUT_LDO
R
LIM
V
OUT_LDO
R
LIM
V
OC_DELAY
V
OC_DELAY
C
OC_DELAY
= 5V, VIN = 8V
= 39kΩ to SGND,
= 5V, VIN = 8V
= 100kΩ
= 0.5V rising
= 0.5V, falling
is unconnected
OUT_SW rising to +0.5V,
OUT_SW
= 1kΩ
R
EN_SW falling, V
rising to +1V, R
V
OUT_LDO
OUT_SW
= 5V
V
+
VIN +
IN
3.2
V
IN
7.0
3.5
+
VIN +
8.1
0.6µs
VIN +
3.8
VIN +
9.5
TH_PROT
+ 250mV
-
= 0V63100mA
121618V
- V
OUT_LDO
OUT_SW
,
= 5V,
3670mV
85100120
304050
0.395V
1.1941.2351.270V
12.516.021.3µA
0.751.001.40µA
12µs
38µs
OUT_LDO
- V
= 1kΩ,
OUT_SW
18µs
V
mA
MAX15009/MAX15011
Automotive 300mA LDO Regulators with
Switched Output and Overvoltage Protector
Ground. PGND is also the return path for the overvoltage protector pulldown current
for the MAX15009. In this case, connect PGND to SGND at the negative terminal of the
bypass capacitor connected to the source of the external MOSFET. For the
MAX15011, connect PGND to SGND together to the local ground plane.
Active-Low Open-Drain Reset Output. RESET is low while OUT_LDO is below the reset
threshold. Once OUT_LDO has exceeded the reset threshold, RESET remains low for
the duration of the reset timeout period then goes high.
9CTCT
10FB_PROT—
12GATE—
13SOURCE—
Reset Timeout Adjust Input. Connect a capacitor (C
the reset timeout period. See the Setting the
Overvoltage-Threshold Adjustment Input. Connect FB_PROT to an external resistive
voltage-divider network to adjust the desired overvoltage threshold. Use FB_PROT to
monitor a system input or output voltage. See the Setting the Overvoltage Threshold(MAX15009 Only) section.
Protector Gate Drive Output. Connect GATE to the gate of an external n-channel
MOSFET. GATE is the output of a charge pump with a 45µA pullup current to 8.1V
(typ) above IN during normal operation. GATE is quickly turned off through a 63mA
internal pulldown during an overvoltage condition. GATE then remains low until
FB_PROT has decreased below 96% of the overvoltage threshold. GATE pulls low
when EN_PROT is low.
Output-Voltage Sense Input. Connect SOURCE to the source of the external n-channel
MOSFET.
19, 20ININRegulator Input. Bypass IN to SGND with a 10µF capacitor with an ESR < 1.5Ω.
21, 22OUT_LDOOUT_LDO
23OC_DELAYOC_DELAY
MAX15009MAX15011
NAME
FUNCTION
LDO Voltage Feedback Input. Connect FB_LDO to SGND to select the preset +5V
output voltage. Connect FB_LDO to an external resistive voltage-divider for adjustable
output operation. See the Setting the Output Voltage section.
Active-High LDO Enable Input. Connect EN_LDO to IN or to a logic-high voltage to
turn on the regulator. To place the LDO in shutdown, pull EN_LDO low or leave
unconnected and leave HOLD unconnected. EN_LDO is internally pulled to SGND
through a 1µA current sink. See the Control Logic section.
Active-High Switch Enable Input. Connect EN_SW to IN or to a logic-high voltage to
turn on the switch. Pull EN_SW low or leave unconnected to place the switch in
shutdown. EN_SW is internally pulled to SGND through a 1µA current sink.
Protector Enable Input. Drive EN_PROT low to force GATE low and turn off the external
n-channel MOSFET. EN_PROT is internally pulled to SGND by a 1µA sink current.
Connect EN_PROT to IN for normal operation.
LDO Regulator Output. Bypass OUT_LDO to SGND with a ceramic capacitor with a
minimum value of 22µF. OUT_LDO has a fixed 5V output or can be adjusted from1.8V
to 11V. See the Setting the Output Voltage section.
Switch Overcurrent Blanking Time Programming Input. Leave OC_DELAY
unconnected to select the minimum delay timeout before turning the switch off.
OC_DELAY is internally pulled to SGND through a 1µA current source. See the
Programming the Switch Overcurrent Blanking Time section.
Switch Current-Limit Set Input. Connect a 10kΩ to 200kΩ resistor from ILIM to SGND to
24ILIMILIM
25HOLDHOLD
27, 28OUT_SWOUT_SWSwitch Output. Bypass OUT_SW to SGND with a minimum 0.1µF ceramic capacitor.
—EPEP
select the current limit for the internal switch. Connect ILIM to OUT_LDO to select the
internal 170mA (min) current-limit threshold. Do not leave ILIM unconnected. See the
Setting the Switch Current Limit section.
Active-Low Hold Input. If EN_LDO is high when HOLD is forced low, the regulator
latches the state of the EN_LDO input and allows the regulator to remain turned on
when EN_LDO is subsequently pulled low. To shut down the regulator, release HOLD
after EN_LDO is pulled low. If HOLD functionality is unused, connect HOLD to
OUT_LDO or leave unconnected. HOLD is internally pulled up to OUT_LDO through a
0.6µA current source. See the Control Logic section.
Exposed Pad. Connect EP to SGND plane. EP also functions as a heatsink to maximize
thermal dissipation. Do not use as the main ground connection.
MAX15009/MAX15011
Functional Diagram
Automotive 300mA LDO Regulators with
Switched Output and Overvoltage Protector
The MAX15009/MAX15011 integrate a 300mA LDO
voltage regulator, a current-limited switched output,
and an OVP controller (MAX15009 only). These devices
operate over a wide supply voltage range from 5V to
40V and are able to withstand load-dump transients up
to 45V.
The MAX15009/MAX15011 feature a 300mA LDO regulator that consumes 70µA of current under light-load
conditions and feature a fixed 5V or an adjustable output voltage (1.8V to 11V). Connect FB_LDO to ground
to select a fixed 5V output voltage or select the LDO
output voltage by connecting an external resistive voltage-divider at FB_LDO. The regulator sources at least
300mA of current and includes a current limit of 330mA
(min). Enable the LDO by pulling EN_LDO high.
The switch features accurate current-limit sensing circuitry and is capable of controlling remote loads. Once
enabled, an internal charge pump generates the overdrive voltage for an internal MOSFET. The switch then
starts to conduct and OUT_SW is charged up to
V
OUT_LDO
. The switch is enabled when the output volt-
age of the LDO is above the RESET threshold voltage
(92.5% of the LDO nominal output value).
An overcurrent condition exists when the current at
OUT_SW, I
OUT_SW
, exceeds the 200mA (typ) internal
factory-set current-limit threshold or the externally
adjustable current-limit threshold. During a continuous
overcurrent event, the capacitor connected at
OC_DELAY, C
OC_DELAY
, is charged up to a voltage of
1.235V with a current, I
OC_DELAY_UP
. When this voltage
is reached, an overcurrent latch is set and the gate of
the internal MOSFET is discharged, reducing I
OUT_SW
.
C
OC_DELAY
is then discharged through a pulldown cur-
rent, I
OC_DELAY_DOWN(IOC_DELAY_UP
/ 16) and the
internal MOSFET remains off until C
OC_DELAY
has been
discharged to 0.1V. After this user-programmable turnoff delay, the switch turns back on. This charge/
discharge is repeated if the overcurrent condition persists. The switch returns to normal operation once the
overcurrent condition has been removed.
The OVP controller (MAX15009 only) relies on an external MOSFET with adequate voltage rating (V
DSS
) to
protect downstream circuitry from overvoltage transients. The OVP controller drives the gate of the external n-channel MOSFET, and is configurable to operate
as an overvoltage protection switch or as a closed-loop
voltage limiter.
GATE Voltage (MAX15009 Only)
The MAX15009 uses a high-efficiency charge pump to
generate the GATE voltage for the external n-channel
MOSFET. Once the input voltage, V
IN
, exceeds the
undervoltage lockout (UVLO) threshold, the internal
charge pump fully enhances the external n-channel
MOSFET. An overvoltage condition occurs when the
voltage at FB_PROT goes above the threshold voltage,
V
TH_PROT
. After V
TH_PROT
is exceeded, GATE is quickly pulled to PGND with a 63mA pulldown current. The
MAX15009 includes an internal clamp from GATE to
SOURCE that ensures that the voltage at GATE never
exceeds one diode drop below SOURCE during gate
discharge. The voltage clamp also prevents the GATEto-SOURCE voltage from exceeding the absolute maximum rating for the V
GS
of the external MOSFET in case
the source terminal is accidentally shorted to 0V.
Overvoltage Monitoring (MAX15009 Only)
The OVP controller monitors the voltage at FB_PROT
and controls an external n-channel MOSFET, isolating,
or limiting the load during an overvoltage condition.
Operation in OVP switch mode or limiter mode
depends on the connection between FB_PROT and the
external MOSFET.
Overvoltage Switch Mode
When operating in OVP switch mode, the FB_PROT
divider is connected to the drain of the external MOSFET. The feedback path consists of the voltage-divider
tapped at FB_PROT, FB_PROT’s internal comparator,
the internal gate charge pump/gate pulldown, and the
external n-channel MOSFET (Figure 1). When the programmed overvoltage threshold is exceeded, the internal comparator quickly pulls GATE to ground and turns
off the external MOSFET, disconnecting the power
source from the load. In this configuration, the voltage
at the source of the MOSFET is not monitored. When
the voltage at FB_PROT decreases below the overvoltage threshold, the MAX15009 raises the voltage at
GATE, reconnecting the load to the power source.
Overvoltage-Limiter Mode (MAX15009 Only)
When operating in overvoltage-limiter mode, the feedback path consists of SOURCE, FB_PROT’s internal
comparator, the internal gate charge pump/gate pulldown, and the external n-channel MOSFET (Figure 2).
This configuration results in the external MOSFET operating as a hysteretic voltage regulator.
During normal operation, GATE is enhanced 8.1V above
VIN. The external MOSFET source voltage is monitored
through a resistive voltage-divider between SOURCE
and FB_PROT. When V
SOURCE
exceeds the adjustable
overvoltage threshold, an internal pulldown switch
discharges the gate voltage and quickly turns the
MOSFET off. Consequently, the source voltage begins
to fall. The V
SOURCE
fall time is dependent on the MOSFET’s gate charge, the internal charge-pump current,
the output load, and any load capacitance at SOURCE.
When the voltage at FB_PROT is below the overvoltage
threshold by an amount equal to the hysteresis, the
charge pump restarts and turns the MOSFET back on.
In this way, the OVP controller attempts to regulate
V
SOURCE
around the overvoltage threshold. SOURCE
remains high during overvoltage transients and the
MOSFET continues to conduct during an overvoltage
event. The hysteresis of the FB_PROT comparator and
the gate turn-on delay force the external MOSFET to
operate in a switched on/off sequence during an overvoltage event.
Exercise caution when operating the MAX15009 in voltage-limiting mode for long durations. Care must be
taken against prolonged or repeated exposure to overvoltage events while delivering large amounts of load
current as the power dissipation in the external MOSFET may be high under these conditions. To prevent
damage to the MOSFET, implement proper heatsinking.
The capacitor tied between SOURCE and ground may
also be damaged if the ripple current rating for the
capacitor is exceeded.
As the transient voltage decreases, the voltage at
SOURCE falls. For fast-rising transients and very large
MOSFETs, connect an additional capacitor from GATE
to PGND. This capacitor acts as a voltage-divider working against the MOSFET’s drain-to-gate capacitance. If
using a very low gate charge MOSFET, additional
capacitance from GATE to ground might be required to
reduce the switching frequency.
Control Logic
The MAX15009/MAX15011 LDO features two logic
inputs, EN_LDO and HOLD, making these devices suitable for automotive applications. For example, when
the ignition key signal drives EN_LDO high, the regulator turns on and remains on even if EN_LDO goes low,
as long as HOLD is forced low and stays low after initial
regulator power-up. In this state, releasing HOLD turns
the regulator output (OUT_LDO) off. This feature makes
it possible to implement a self-holding circuit without
external components. Forcing EN_LDO low and HOLD
high (or unconnected) places the regulator into shutdown mode, reducing the supply current to less than
16µA. Table 1 shows the state of OUT_LDO with
respect to EN_LDO and HOLD. Leave HOLD uncon-
nected or connect directly to OUT_LDO to allow the
EN_LDO input to act as a standard on/off logic input for
the regulator.
Figure 2. Overvoltage Limiter (MAX15009)
V
IN
IN
GATE
MAX15009
SOURCE
FB_PROT
SGND
PROTECTOR
OUTPUT
Applications Information
Load Dump
Most automotive applications run off a multicell 12V
lead-acid battery with a nominal voltage that swings
between 9V and 16V, depending on load current,
charging status, temperature, and battery age, etc. The
battery voltage is distributed throughout the automobile
and is locally regulated down to voltages required by
the different system modules. Load dump occurs when
the alternator is charging the battery and the battery
becomes disconnected. Power in the alternator (behaving now essentially as an inductor) flows into the distributed power system and elevates the voltage seen at
each module. The voltage spikes have rise times typically greater than 5ms and decay within several hundred milliseconds but can extend out to 1s or more
depending on the characteristics of the charging system. These transients are capable of destroying semiconductors on the first fault event.
The MAX15009/MAX15011 feature load-dump transient
protection up to +45V.
Setting the Output Voltage
The MAX15009/MAX15011 feature dual-mode operation: these devices operate in either a preset voltage
mode or an adjustable mode. In preset voltage mode,
internal feedback resistors set the linear regulator output voltage (V
OUT_LDO
) to 5V. To select the preset 5V
output voltage, connect FB_LDO to SGND.
To select an adjustable output voltage between 1.8V
and 11V, use two external resistors connected as a
voltage-divider to FB_LDO (Figure 3). Set the output
voltage using the following equation:
V
OUT_LDO
= V
FB_LDO
x (R1+ R2) / R
2
where V
FB_LDO
= 1.235V and R2≤ 50kΩ.
Setting the
RESET
Timeout Period
The reset timeout period is adjustable to accommodate
a variety of applications. Set the reset timeout period by
connecting a capacitor, C
RESET
, between CT and
SGND. Use the following formula to select the reset
timeout period, t
EN_LDO is pulled to SGND through an internal pulldown. HOLD
is unconnected and is internally pulled up to OUT_LDO. The
regulator is disabled.
EN_LDO is externally driven high turning regulator on. HOLD is
pulled up to OUT_LDO.
HOLD is externally pulled low while EN_LDO remains high
(latches EN_LDO state).
EN_LDO is driven low or left unconnected. HOLD remains
externally pulled low keeping the regulator on.
HOLD is driven high or left unconnected while EN_LDO is low.
The regulator is turned off and EN_LDO/HOLD logic returns to the
initial state.
V
IN
IN
MAX15009
MAX15011
OUT_LDO
FB_LDO
SGND
R1
R2
MAX15009/MAX15011
Leave CT open to select a typical reset timeout of 19µs.
To maintain reset accuracy, use a low-leakage type of
capacitor.
Setting the Switch Current Limit
The switch block features accurate current-limit sensing circuitry. A resistor connected from ILIM to SGND
can be used to select the current-limit threshold using
the following relationship:
I
SW_LIM
(mA) = R
ILIM
(kΩ) x 1mA / kΩ
where 20kΩ ≤ R
ILIM
≤ 200kΩ.
Connect ILIM to OUT_LDO to select the default current
limit of 200mA (typ).
Programming the Switch
Overcurrent Blanking Time
The switch provides an adjustable overcurrent blanking
time to allow the safe charge of large capacitive loads.
When an overcurrent event is detected, a delay period
elapses before the condition is latched and the internal
MOSFET is turned off. This period is the overcurrent
delay, t
OC_DELAY
. Set the overcurrent delay using the
following equation:
t
OC_DELAY
= C
OC_DELAY
x V
OC_DELAY
/ I
OC_DELAY_UP
where t
OC_DELAY
is in seconds and C
OC_DELAY
is in
µF. V
OC_DELAY
is the overcurrent delay timeout thresh-
old voltage in volts and I
OC_DELAY_UP
is the overcur-
rent delay timeout pullup current in µA as seen in the
Electrical Characteristics
table.
Ensure that the switch is not disabled due to a large
startup inrush current by selecting a large enough
value for overcurrent blanking time. Assume that the
current available for charging the total switch output
capacitance, C
OUT_SW
, is the difference between the
current-limit threshold value, I
SW_LIM
, and the nominal
DC load current at OUT_SW, I
OUT_SW_NOM
and select
the C
OC_DELAY
using the following relationship:
C
OC_DELAY
also affects the length of time before the
MAX15009/MAX15011 attempt to turn the switch back
on. Set the autoretry delay using the following equation:
t
OC_RETRY
= C
OC_DELAY
x
V
OC_DELAY/IOC_DELAY_DOWN
where t
OC_RETRY
is in seconds, C
OC_DELAY
is in µF,
V
OC_DELAY
is in volts, and I
OC_DELAY_DOWN
is in µA.
C
OC_DELAY
should be a low-leakage type of capacitor
with a minimum value of 100pF.
Setting the Overvoltage Threshold
(MAX15009 Only)
The MAX15009 provides an accurate means to set the
overvoltage threshold for the OVP controller using
FB_PROT. Use a resistive voltage-divider to set the
desired overvoltage threshold (Figure 4). FB_PROT has
a rising 1.235V threshold with a 4% falling hysteresis.
Begin by selecting the total end-to-end resistance,
R
TOTAL
= R3+ R4. Choose R
TOTAL
to yield a total current
equivalent to a minimum of 100 x I
FB_PROT
(FB_PROT’s
input maximum bias current) at the desired overvoltage
threshold. See the
Electrical Characteristics
table.
For example:
With an overvoltage threshold (VOV) set to 20V, R
TOTAL
< 20V / (100 x I
FB_PROT
), where I
FB_PROT
is FB_PROT’s
maximum 100nA bias current:
R
TOTAL
< 2MΩ
Automotive 300mA LDO Regulators with
Switched Output and Overvoltage Protector
Figure 4. Setting the Overvoltage Threshold (MAX15009)
C
OC_DELAY
IVC
OC_DELAY_UPOUT_LDOOUT_SW
≥
V(II )
OC_DELAYSW_LIMOUT_SW_NOM
×−
××
V
IN
R5
R6
IN
FB_PROT
MAX15009
SGND
GATE
PROTECTOR
OUTPUT
SOURCE
V
IN
IN
GATE
MAX15009
SOURCE
FB_PROT
SGND
PROTECTOR
OUTPUT
R3
R4
Use the following formula to calculate R4:
R4= V
TH_PROT
x R
TOTAL
/ V
OV
where V
TH_PROT
is the 1.235V FB_PROT rising threshold
and VOVis the desired overvoltage threshold. R4= 124kΩ:
R
TOTAL
= R3+ R
4
where R3= 1.88MΩ. Use a standard 1.87MΩ resistor.
A lower value for total resistance dissipates more
power, but provides better accuracy and robustness
against external disturbances.
Input Transients Clamping
When the external MOSFET is turned off during an
overvoltage event, stray inductance in the power path
may cause additional input-voltage spikes that exceed
the V
DSS
rating of the external MOSFET or the absolute
maximum rating for the MAX15009. Minimize stray
inductance in the power path using wide traces and
minimize the loop area included by the power traces
and the return ground path.
For further protection, add a zener diode or transient
voltage suppressor (TVS) rated below the absolute
maximum rating limits (Figure 5).
External MOSFET Selection
Select the external MOSFET with adequate voltage rating,
V
DSS
, to withstand the maximum expected load-dump
input voltage. The on-resistance of the MOSFET,
R
DS(ON)
, should be low enough to maintain a minimal
voltage drop at full load, limiting the power dissipation
of the MOSFET.
During regular operation, the power dissipated by the
MOSFET is:
P
NORMAL
= I
LOAD
2
x R
DS(ON)
Normally, this power loss is small and is safely handled
by the MOSFET. However, when operating the
MAX15009 in overvoltage limiter mode under prolonged or frequent overvoltage events, select an external MOSFET with an appropriate power rating.
During an overvoltage event, the power dissipation in
the external MOSFET is proportional to both load current and to the drain-source voltage, resulting in high
power dissipated in the MOSFET (Figure 6). The power
dissipated across the MOSFET is:
P
OV_LIMITER
= VQ1x I
LOAD
where VQ1is the voltage across the MOSFET’s drain
and source during overvoltage limiter operation, and
I
Figure 5. Protecting the MAX15009 Input from High-Voltage
Transients
Figure 6. Power Dissipated Across MOSFETs During an
Overvoltage Fault (Overvoltage Limiter Mode)
V
IN
IN
TVS
MAX15009
GATE
SOURCE
SGND
LOAD
V
MAX
GATE
SOURCE
FB_PROT
+ VQ1 -
I
LOAD
V
LOAD
V
SOURCE
IN
TVS
MAX15009
SGND
SOURCE
V
OV
MAX15009/MAX15011
Overvoltage-Limiter Mode
Switching Frequency
When the MAX15009 is configured in overvoltagelimiter mode, the external n-channel MOSFET is subsequently switched on and off during an overvoltage
event. The output voltage at OUT_PROT resembles a
periodic sawtooth waveform. Calculate the period of
the waveform, t
OVP
, by summing three time intervals
(Figure 7):
t
OVP
= t1+ t2+ t
3
where t1is the V
SOURCE
output discharge time, t2 is the
GATE delay time, and t3is the V
SOURCE
output charge
time.
During an overvoltage event, the power dissipated
inside the MAX15009 is due to the gate pulldown current, I
GATEPD
. This amount of power dissipation is
worse when I
SOURCE
= 0 (C
SOURCE
is discharged only
by the internal current sink).
The worst-case internal power dissipation contribution
in overvoltage limiter mode, P
OVP
, in watts can be
approximated using the following equation:
where V
OV
is the overvoltage threshold voltage in volts
and I
GATEPD
is 100mA (max) GATE pulldown current.
Output Discharge Time (t1)
When the voltage at SOURCE exceeds the adjusted
overvoltage threshold, GATE’s internal pulldown is
enabled until V
SOURCE
drops by 4%. The internal cur-
rent sink, I
GATEPD
, and the external load current,
I
LOAD
, discharge the external capacitance from
SOURCE to ground.
Calculate the discharge time, t
1
, using the following
equation:
where t1is in ms, VOVis the adjusted overvoltage
threshold in volts, I
LOAD
is the external load current in
mA, and I
GATEPD
is the 100mA (max) internal pulldown
current of GATE. C
SOURCE
is the value of the capacitor
connected between the source of the MOSFET and
PGND in µF.
GATE Delay Time (t2)
When SOURCE falls 4% below the overvoltage-threshold
voltage, the internal current sink is disabled and the
internal charge pump begins recharging the external
GATE voltage. Due to the external load, the SOURCE
voltage continues to drop until the gate of the MOSFET is
recharged. The time needed to recharge GATE and reenhance the external MOSFET is approximately:
where t2is in µs, C
iss
is the input capacitance of the
MOSFET in pF, and V
GS(TH)
is the GATE-to-SOURCE
threshold voltage of the MOSFET in volts. VFis the 0.7V
(typ) internal clamp diode forward voltage of the MOSFET in volts, and I
GATE
is the charge-pump current
45µA (typ). Any external capacitance between GATE
and PGND adds up to C
iss
.
During t2, the SOURCE capacitance, C
SOURCE
, loses
charge through the output load. The voltage across
C
SOURCE
, ΔV2, decreases until the MOSFET reaches
its V
GS(TH)
threshold. Approximate ΔV2using the fol-
lowing formula:
SOURCE Output Charge Time (t3)
Once the GATE voltage exceeds the GATE-to-SOURCE
threshold, V
GS(TH)
, of the external MOSFET, the MOSFET turns on and the charge through the internal
charge pump with respect to the drain potential, QG,
determines the slope of the output voltage rise. The
time required for the SOURCE voltage to rise again to
the overvoltage threshold is:
Automotive 300mA LDO Regulators with
Switched Output and Overvoltage Protector
is the MOSFET’s reverse transfer capacitance in pF.
Any external capacitance between GATE and PGND
adds up to C
rss
.
Power Dissipation/Junction Temperature
During normal operation, the MAX15009/MAX15011
have two main sources of internal power dissipation:
the LDO and the switched output.
The internal power dissipation due to the LDO can be
calculated as:
where VINis the LDO input supply voltage in volts,
V
OUT_LDO
is the output voltage of the LDO in volts,
I
OUT_LDO
is the LDO total load current in mA, and
I
OUT_SW
is the switch load current in mA.
Calculate the power dissipation due to the switch as:
where ΔVSWis the switch dropout voltage in volts for
the given I
OUT_SW
current in mA.
The total power dissipation P
DISS
in mW as:
P
DISS
= P
LDO
+ P
SW
For prolonged exposure to overvoltage events, use the
VINvoltage expected during overvoltage conditions.
Under these circumstances the corresponding internal
power dissipation contribution, P
OVP
, calculated in the
previous section should also be included in the total
power dissipation, P
DISS
.
For a given ambient temperature, T
A
, calculate the
junction temperature, TJ, as follows:
TJ= TA+ P
DISS
x θ
JA
where TJand TAare in °C and θJAis the junction-toambient thermal resistance in °C/W as listed in the
Absolute Maximum Ratings
section.
The junction temperature should never exceed +150°C
during normal operation.
Thermal Protection
When the junction temperature exceeds TJ= +160°C,
the MAX15009/MAX15011 shut down to allow the
device to cool. When the junction temperature drops to
+140°C, the thermal sensor turns all enabled blocks on
again, resulting in a cycled output during continuous
thermal-overload conditions. Thermal protection protects the MAX15009/MAX15011 from excessive power
dissipation. For continuous operation, do not exceed
the absolute maximum junction temperature rating of
+150°C.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information
go to www.maxim-ic.com/packages
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information
go to www.maxim-ic.com/packages
.)
MAX15009/MAX15011
Automotive 300mA LDO Regulators with
Switched Output and Overvoltage Protector
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
24
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