Rainbow Electronics MAX13047E User Manual

General Description
The MAX13046E/MAX13047E ±15kV ESD-protected bidirectional level translators provide level shifting for data transfer in a multivoltage system. The MAX13046E is a single-channel translator, and the MAX13047E is a dual-channel translator. Externally applied voltages, VCCand VL, set the logic level on either side of the device. The MAX13046E/MAX13047E utilize a transmis­sion-gate-based design to allow data translation in either direction (V
LVCC
) on any single data line. The MAX13046E/MAX13047E accept VLfrom +1.1V to the minimum of either +3.6V or (V
CC
+ 0.3V), and VCCfrom +1.65V to +5.5V, making these devices ideal for data transfer between low-voltage ASICs/PLDs and higher voltage systems.
The MAX13046E/MAX13047E feature a shutdown mode that reduces supply current to less than 1µA thermal short-circuit protection, and ±15kV ESD protection on the VCCside for enhanced protection in applications that route signals externally. The MAX13046E/MAX13047E operate at a guaranteed data rate of 8Mbps when push­pull driving is used.
The MAX13046E is available in a 6-pin µDFN package, and the MAX13047E is available in a 10-pin UTQFN. Both devices are specified over the extended -40°C to +85°C operating temperature range.
Applications
I2C and 1-Wire®Level Translation
CMOS Logic-Level Translation
Cell Phones
Portable Devices
Features
Bidirectional Level TranslationOperation Down to +1.1V on V
L
Ultra-Low Supply Current in Shutdown Mode
1µA (max)
Guaranteed Push-Pull Driving Data Rate
8Mbps (+1.2V
V
L
+3.6V, V
CC
+5.5V)
16Mbps (+1.8V
V
L
V
CC
+3.3V)
Extended ESD Protection on the I/O VCCLines
±15kV Human Body Model ±15kV IEC61000-4-2 Air-Gap Discharge Method ±8kV IEC61000-4-2 Contact Discharge
Low Supply CurrentShort-Circuit ProtectionSpace-Saving µDFN and UTQFN Packages
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
________________________________________________________________
Maxim Integrated Products
1
Ordering Information/Selector Guide
19-4149; Rev 1; 8/08
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
Note: All devices are specified over the extended -40°C to +85°C operating temperature range.
+
Denotes a lead-free/RoHS-compliant package.
EP = Exposed pad.
Pin Configurations
TOP VIEW
MAX13046E
µDFN
1mm × 1.5mm
2
5
SHDN
GND
1
6
V
CC
V
L1
3
4
I/O V
CC
I/O V
L
+
UTQFN
1.4mm × 1.8mm
MAX13047E
+
V
CC
N.C.
I/O V
L2VL
1 2
7
6
3
N.C.
4
SHDN
I/O V
CC2
I/O V
L1
GND
I/O V
CC1
5
10
9
8
Typical Application Circuits appear at end of data sheet.
1-Wire is a registered trademark of Maxim Integrated Products, Inc.
MAX13046EELT+ 6 µDFN (1mm x 1.5mm) 1 OC
MAX13047EEVB+ 10 UTQFN (1.4mm x 1.8mm) 2 AAC
PART PIN-PACKAGE NUMBER OF CHANNELS TOP MARK
MAX13046E/MAX13047E
Single- and Dual-Bidirectional Low-Level Translator
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VCC= +1.65V to +5.5V, VL= +1.1V to minimum of either +3.6V or ((VCC+ 0.3V)), I/O VL and I/O VCCare unconnected, TA= -40°C to +85°C, unless otherwise noted. Typical values are V
CC
= +3.3V, VL= +1.8V at TA= +25°C.) (Notes 2, 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
(All voltages referenced to GND.) V
CC
...........................................................................-0.3V to +6V
V
L
..............................................................................-0.3V to +4V
I/O V
CC
.......................................................-0.3V to (VCC+ 0.3V)
I/O V
L
............................................................-0.3V to (VL+ 0.3V)
SHDN........................................................................-0.3V to +6V
Short-Circuit Duration I/O V
L
, I/O VCCto GND...........Continuous
Power Dissipation (T
A
= +70°C)
6-Pin µDFN (derate 2.1mW/°C above +70°C) .............168mW
10-Pin UTQFN (derate 6.9mW/°C above +70°C).........559mW
Junction-to-Ambient Thermal Resistance (
θ
JA
) (Note 1)
6-Pin µDFN.................................................................477°C/W
10-Pin UTQFN ...........................................................20.1°C/W
Junction-to-Ambient Thermal Resistance (
θ
JC
) (Note 1)
6-Pin µDFN................................................................20.1°C/W
10-Pin UTQFN .........................................................143.1°C/W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial
.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
POWER SUPPLY
VL Supply Range V
VCC Supply Range V
Supply Current from V
Supply Current from V
VCC Shutdown-Mode Supply Current I
CC
L
I
SD-VCCTA
VCC > 3.3V 1.1 3.6V
L
VCC 3.3V 1.1 V
CC
QVCC
I
QVL
= +25°C, SHDN = GND 0.03 1 µA
1.65 5.5 V
CC
+ 0.3V
10 µA
15 µA
V
VL Shutdown-Mode Supply Current I
I/O VL and I/O VCC Shutdown-Mode Leakage Current
SHDN Input Leakage TA = +25°C 0.02 0.1 µA
ESD PROTECTION
I/O VCC (Note 4)
All Other Pins Human Body Model ±2 kV
LOGIC-LEVEL THRESHOLDS
I/O VL Input-Voltage High V
I/O VL Input-Voltage Low V
SD-VL
I
SD-LKGTA
IHL
ILL
TA = +25°C, SHDN = GND 0.03 1 µA
= +25°C, SHDN = GND 0.02 0.5 µA
Human Body Model ±15V
IEC 61000-4-2 Air-Gap Discharge ±15V
IEC 61000-4-2 Contact Discharge ±8V
VL -
0.2
0.15 V
kV
V
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(VCC= +1.65V to +5.5V, VL= +1.1V to minimum of either +3.6V or ((VCC+ 0.3V)), I/O VL and I/O VCCare unconnected, TA= -40°C to +85°C, unless otherwise noted. Typical values are V
CC
= +3.3V, VL= +1.8V at TA= +25°C.) (Notes 2, 3)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
I/O VCC Input-Voltage High V
I/O VCC Input-Voltage Low V
I/O VL Output-Voltage High V
I/O VL Output-Voltage Low V
I/O VCC Output-Voltage High V
I/O VCC Output-Voltage Low V
SHDN Input-Voltage High V
SHDN Input-Voltage Low V
I/O VL-to-I/O V
V
Shutdown Threshold Low V
CC
V
Shutdown Threshold High V
CC
VL Shutdown Threshold V
Pullup Resistance V
RISE/FALL-TIME ACCELERATOR STAGE
Accelerator Pulse Duration 20 ns
I/O VL Output-Accelerator Source Impedance
I/O VCC Output-Accelerator Source Impedance
I/O VL Output-Accelerator Source Impedance
I/O VCC Output-Accelerator Source Impedance
Resistance 80 250 Ω
CC
IH-SHDN
IL-SHDN
TH_L_VCCVCC
TH_H_VCCVCC
TH_VL
IHC
ILC
OHL
OLL
OHC
OLC
I/O VL source current = 20µA, V
I/O VL sink current = 1mA, V
I/O VCC source current = 20µA, V
I/O VCC sink current = 1mA, V
VL > 1.2 VL - 0.2
1.1 VL < 1.2 VL - 0.1
V
V
V
V
> VCC - 0.4V
I/O VCC
< 0.15V
I/O VCC
> VL - 0.2V
I/O VL
< 0.15V
I/O VL
falling, VL = +3.3V 0.5 0.8 1.1 V
rising, VL = +3.3V 0.3 0.6 0.9 V
= VL = +3.3V 6 10 15.5 kΩ
CC
= 1.7V 13 Ω
L
= 2.2V 17 Ω
CC
= 3.2V 6 Ω
L
= 3.6V 10 Ω
CC
VCC -
0.4
0.15 V
0.67 x V
L
0.4 V
0.67 x
V
CC
0.4 V
0.15 V
0.35 0.75 1.06 V
V
V
V
V
MAX13046E/MAX13047E
Single- and Dual-Bidirectional Low-Level Translator
4 _______________________________________________________________________________________
TIMING CHARACTERISTICS FOR +1.2V ≤ VL≤ MINIMUM OF EITHER +3.6V OR (V
CC
+ 0.3V)
(VCC≤ ±5.5V, +1.2V ≤ VL≤ minimum of either +3.6V or ((VCC+ 0.3V)), RS= 50Ω, RL= 1MΩ, CL= 15pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are V
CC
= +3.3V, VL= +1.8V at TA= +25°C.) (Notes 2, 3, 5)
TIMING CHARACTERISTICS FOR +1.1V ≤ VL≤ +1.2V
(VCC≤ ±5.5V, +1.1V ≤ VL≤ +1.2V, RS= 50Ω, RL= 1MΩ, CL= 15pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are V
CC
= +3.3V, VL= +1.8V at TA= +25°C.) (Notes 2, 3, 5)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
I/O VCC Rise Time t
I/O VCC Fall Time t
I/O VL Rise Time t
I/O VL Fall Time t
Propagation Delay
Channel-to-Channel Skew t
Maximum Data Rate
RVCC
FVCC
RVL
FVL
t
PD-VL-VCC
t
PD-VCC-VL
SKEW
Push-pull driving, Figure 1a 7 25
Open-drain driving, Figure 1c 170 400
Push-pull driving, Figure 1a 6 37
Open-drain driving, Figure 1c 20 50
Push-pull driving, Figure 1b 8 30
Open-drain driving, Figure 1d 180 400
Push-pull driving, Figure 1 3 56
Open-drain driving, Figure 1d 30 60
Driving I/O V
Driving I/O V
Each translator equally loaded
Push-pull driving 8 Mbps
Open-drain driving 500 kbps
Push-pull driving 5 30
L
Open-drain driving 210 1000
Push-pull driving 4 30
CC
Open-drain driving 190 1000
Push-pull driving 20
Open-drain driving 50
ns
ns
ns
ns
ns
ns
I/O VCC Rise Time t
I/O VCC Fall Time t
I/O VL Rise Time t
I/O VL Fall Time t
Propagation Delay
Channel-to-Channel Skew t
Maximum Data Rate
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RVCC
FVCC
RVL
FVL
t
PD-VL-VCC
t
PD-VCC-VL
SKEW
Push-pull driving, Figure 1a 7 200
Open-drain driving, Figure 1c 170 400
Push-pull driving, Figure 1a 6 37
Open-drain driving, Figure 1c 20 50
Push-pull driving, Figure 1b 8 30
Open-drain driving, Figure 1d 180 400
Push-pull driving, Figure 1 3 30
Open-drain driving, Figure 1d 30 60
Driving I/O V
Driving I/O V
Each translator equally loaded
Push-pull driving 1.2 Mbps
Open-drain driving 500 kbps
Push-pull driving 5 200
L
Open-drain driving 210 1000
Push-pull driving 4 200
CC
Open-drain driving 190 1000
Push-pull driving 20
Open-drain driving 50
ns
ns
ns
ns
ns
ns
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
_______________________________________________________________________________________ 5
TIMING CHARACTERISTICS FOR +1.8V ≤ VL≤ VCC≤ +3.3V
(+1.8V ≤ VL≤ VCC≤ +3.3V, RS= 50Ω, RL= 1MΩ, CL= 15pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are VCC= +3.3V, V
L
= +1.8V at TA= +25°C.) (Notes 2, 3, 5)
Note 2: All units are 100% production tested at TA= +25°C. Limits over the operating temperature range are guaranteed by design
and not production tested.
Note 3: For normal operation, ensure V
L
< (VCC+ 0.3V). During power-up, VL> (VCC+ 0.3V) does not damage the device.
Note 4: ESD protection is guaranteed by design. To ensure maximum ESD protection, place a 1µF ceramic capacitor between V
CC
and GND. See
Typical Application Circuits
.
Note 5: Timing is measured using 10% of input to 90% of output.
I/O VCC Rise Time t
I/O VCC Fall Time t
I/O VL Rise Time t
I/O VL Fall Time t
Propagation Delay
Channel-to-Channel Skew t
Maximum Data Rate Push-pull driving 16 Mbps
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Push-pull driving, Figure 1a 15 ns
Push-pull driving, Figure 1a 15 ns
Push-pull driving, Figure 1b 15 ns
Push-pull driving, Figure 1b 15 ns
Push-pull driving, driving I/O V
Push-pull driving, driving I/O V
Push-pull driving, each translator equally loaded
L
CC
15
15
10 ns
RVCC
FVCC
RVL
FVL
t
PD-VL-VCC
t
PD-VCC-VL
SKEW
ns
MAX13046E/MAX13047E
Single- and Dual-Bidirectional Low-Level Translator
6 _______________________________________________________________________________________
Typical Operating Characteristics
(VCC= +3.3V, VL= +1.8V, RL= 1MΩ, CL= 15pF, push-pull driving data rate = 8Mbps, TA= +25°C, unless otherwise noted.)
VL DYNAMIC SUPPLY CURRENT
vs. V
CC
SUPPLY VOLTAGE
(PUSH-PULL DRIVING ONE I/O V
L
)
VCC SUPPLY VOLTAGE (V)
V
L
SUPPLY CURRENT (μA)
MAX13046E/7E toc01
1.65 2.20 2.75 3.30 3.85 4.40 4.95 5.50
0
50
100
150
200
250
300
350
VL DYNAMIC SUPPLY CURRENT
vs. V
CC
SUPPLY VOLTAGE
(PUSH-PULL DRIVING ONE I/O V
CC
)
VCC SUPPLY VOLTAGE (V)
V
L
SUPPLY CURRENT (μA)
MAX13046E/7E toc02
1.65 2.20 2.75 3.30 3.85 4.40 4.95 5.50
0
50
100
150
200
250
VCC DYNAMIC SUPPLY CURRENT
vs. V
L
SUPPLY VOLTAGE
(PUSH-PULL DRIVING ONE I/O V
L
)
VL SUPPLY VOLTAGE (V)
V
CC
SUPPLY CURRENT (μA)
MAX13046E/7E toc03
1.2 1.9 2.6 3.3
0
100
200
300
400
500
600
VCC DYNAMIC SUPPLY CURRENT
vs. V
L
SUPPLY VOLTAGE
(PUSH-PULL DRIVING ONE I/O V
CC
)
VL SUPPLY VOLTAGE (V)
V
CC
SUPPLY CURRENT (μA)
MAX13046E/7E toc04
1.2 1.9 2.6 3.3
0
10
20
30
40
50
60
70
80
VL DYNAMIC SUPPLY CURRENT
vs. TEMPERATURE
(PUSH-PULL DRIVING ONE I/O V
L
)
TEMPERATURE (°C)
V
L
SUPPLY CURRENT (μA)
MAX13046E/7E toc05
-40 -15 10 35 60 85
0
20
40
60
80
100
120
140
160
180
200
VL DYNAMIC SUPPLY CURRENT
vs. TEMPERATURE
(PUSH-PULL DRIVING ONE I/O V
CC
)
TEMPERATURE (°C)
V
L
SUPPLY CURRENT (μA)
MAX13046E/7E toc06
-40 -15 10 35 60 85
0
50
100
150
200
250
300
350
VL DYNAMIC SUPPLY CURRENT
vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O V
L
)
CAPACITIVE LOAD (pF)
V
L
SUPPLY CURRENT (μA)
MAX13046E/7E toc07
0 1020304050
0
20
40
60
80
100
120
VCC DYNAMIC SUPPLY CURRENT
vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O V
L
)
CAPACITIVE LOAD (pF)
V
CC
SUPPLY CURRENT (μA)
MAX13046E/7E toc08
0 1020304050
0
200
400
600
800
1000
1200
RISE/FALL TIME vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O V
L
)
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
MAX13046E/7E toc09
0 1020304050
0
5
10
15
20
25
t
FVCC
t
RVCC
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
_______________________________________________________________________________________ 7
Typical Operating Characteristics (continued)
(VCC= +3.3V, VL= +1.8V, RL= 1MΩ, CL= 15pF, push-pull driving data rate = 8Mbps, TA= +25°C, unless otherwise noted.)
PROPAGATION DELAY vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O V
L
)
CAPACITIVE LOAD (pF)
PROPAGATION DELAY (ns)
MAX13046E/7E toc10
0 1020304050
0
1
2
3
4
5
6
7
RISE/FALL TIME vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O V
CC
)
CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
MAX13046E/7E toc11
0 1020304050
0
2
4
6
8
10
12
t
RVL
t
FVL
PROPAGATION DELAY vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O V
CC
)
CAPACITIVE LOAD (pF)
PROPAGATION DELAY (ns)
MAX13046E/7E toc12
0 1020304050
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
RAIL-TO-RAIL DRIVING
(DRIVING ONE I/O V
L
)
MAX13046E/7E toc13
25ns/div
I/O V
L
I/O V
CC
1V/div
1V/div
EXISTING SHUTDOWN MODE
MAX13046E/7E toc14
250ns/div
I/O V
L
I/O V
CC
1V/div
2V/div
1V/div
SHDN
MAX13046E/MAX13047E
Detailed Description
The MAX13046E/MAX13047E ±15kV ESD-protected bidirectional level translators provide level shifting for data transfer in a multivoltage system. The MAX13046E is a single-channel translator and the MAX13047E is a dual-channel translator. Externally applied voltages, VCCand VL, set the logic level on either side of the device. The MAX13046E/MAX13047E utilize a transmis­sion-gate-based design to allow data translation in either direction (VL VCC) on any single data line. The MAX13046E/MAX13047E accept VLfrom +1.1V to the minimum of either +3.6V or (V
CC
+ 0.3V) and VCCfrom
+1.65V to +5.5V, making these devices ideal for data transfer between low-voltage ASICs/PLDs and higher voltage systems.
The MAX13046E/MAX13047E feature a shutdown mode that reduces supply current to less than 1µA thermal short-circuit protection, and ±15kV ESD protection on the VCCside for enhanced protection in applications that route signals externally. The MAX13046E/MAX13047E operate at a guaranteed data rate of 8Mbps when push­pull driving is used. See the
Functional Diagram
.
Single- and Dual-Bidirectional Low-Level Translator
8 _______________________________________________________________________________________
MAX13046E Pin Description
MAX13047E Pin Description
MAX13046E FUNCTION
µDFN NAME
1VLV L Inp ut S up p l y V ol tag e. Byp ass V L w i th a 0.1µF cer am i c cap aci tor l ocated as cl ose as p ossi b l e to the i np ut.
2 GND Ground
3 I/O VLInput/Output. Referenced to VL.
4 I/O V 5 SHDN S hutd ow n Inp ut. D r i ve S HD N hi g h to enab l e the d evi ce. D r i ve S HD N l ow to p ut the d evi ce i n shutd ow n m od e.
6V
MAX13047E FUNCTION
UTQFN NAME
1 I/O V
2V
3, 7 N.C. Not Connected. Internally not connected.
4 SHDN Enable Input. Drive SHDN high to enable the device. Drive SHDN low to put the device in shutdown mode.
5 I/O V
6V
8 I/O V
9 GND Ground
10 I/O V
EP Exposed Pad. Connect EP to GND.
Input/Output. Referenced to VCC.
CC
V CC Inp ut S up p l y V ol tag e. Byp ass V CC w i th a 1µF cer am i c cap aci tor l ocated as cl ose as p ossi b l e to the i np ut
CC
for ful l E S D p r otecti on. If ful l E S D p r otecti on i s not r eq ui r ed , b yp ass V
Input/Output 2. Referenced to VL.
L2
VL Input Supply Voltage. Bypass VL with a 0.1µF ceramic capacitor located as close as possible to the
L
input.
Input/Output 2. Referenced to VCC.
CC2
VCC Input Supply Voltage. Bypass VCC with a 1µF ceramic capacitor located as close as possible to the input for full ESD protection. If full ESD protection is not required, bypass V
CC
capacitor.
Input/Output 1. Referenced to VCC.
CC1
Input/Output 1. Referenced to VL.
L1
w i th a 0.1µF cer am i c cap aci tor .
CC
with a 0.1µF ceramic
CC
Level Translation
For proper operation, ensure that +1.65V ≤ VCC≤ +5.5V and +1.1V ≤ VL≤ the minimum of either +3.6V or (V
CC
+ 0.3V). During power-up sequencing, VL≥ (V
CC
+ 0.3V) does not damage the device. The speed of the rise time accelerator circuitry limits the maximum data rate for the MAX13046E/MAX13047E to 16Mbps.
Rise-Time Accelerators
The MAX13046E/MAX13047E have an internal rise-time accelerator, allowing operation up to 16Mbps. The rise­time accelerators are present on both sides of the device and act to speed up the rise time of the input and output of the device, regardless of the direction of the data. The triggering mechanism for these accelera­tors is both level and edge sensitive. To guarantee operation of the rise time accelerators the maximum parasitic capacitance should be less than 200pF on the I/O lines.
Shutdown Mode
Drive SHDN low to place the MAX13046E/MAX13047E in shutdown mode and drive SHDN high for normal operation. Activating the shutdown mode disconnects the internal 10kΩ pullup resistors on the I/O VCCand I/O VLlines. This forces the I/O lines to a high-impedance
state, and decreases the supply current to less than 1µA. The high-impedance I/O lines in shutdown mode allow for use in a multidrop network. The MAX13046E/ MAX13047E have a diode from each I/O to the corre­sponding supply rail and GND. Therefore, when in shut­down mode, do not allow the voltage at I/O VLto exceed (VL + 0.3V), or the voltage at I/O V
CC
to exceed
(V
CC
+ 0.3V).
Operation with One Supply Disconnected
Certain applications require sections of circuitry to be disconnected to save power. When VLis connected and VCCis disconnected or connected to ground, the device enters shutdown mode. In this mode, I/O VLcan still be driven without damage to the device; however, data does not translate from I/O VLto I/O VCC. If VCCfalls more than V
TH_L_VCC
below VL, the device disconnects the pullup resistors at I/O VLand I/O VCC. To achieve the lowest possible supply current from VLwhen VCCis dis­connected, it is recommended that the voltage at the VCCsupply input be approximately equal to GND.
When VCCis connected and VLis less than V
TH_VL
, the
device enters shutdown mode. In this mode, I/O V
CC
can still be driven without damage to the device; howev­er, data does not translate from I/O V
CC
to I/O VL.
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
_______________________________________________________________________________________ 9
Functional Diagram
V
L
ONE-SHOT RISE-TIME
ACCELERATOR
10kΩ 10kΩ
I/O V
L
SHDN
V
CC
ONE-SHOT RISE-TIME
ACCELERATOR
GATE BIAS
N
GND
PU2PU1
I/O V
CC
MAX13046E/MAX13047E
When VCCis disconnected or connected to ground, I/O VCCmust not be driven more than VCC+ 0.3V. When V
L
is disconnected or connected to ground, I/O VLmust not be driven more than VL+ 0.3V.
Short-Circuit Protection
Thermal-overload detection protects the MAX13046E/ MAX13047E from short-circuit fault conditions. In the event of a short-circuit fault, when the junction tempera­ture (TJ) exceeds +150°C, the device enters shutdown mode. When the device has cooled to below +140°C, normal operation resumes.
±15kV ESD Protection
ESD protection structures are incorporated on all pins to protect against electrostatic discharges encountered during handling and assembly. The ESD structures withstand electrostatic discharge in all states: normal
operation, shutdown mode, and powered down. The I/O VCClines of the MAX13046E/MAX13047E are char­acterized for protection to the following limit:
±15kV using the Human Body Model
ESD Test Conditions
ESD performance depends on a variety of conditions. Contact Maxim for a reliability report that documents test setup, test methodology, and test results.
Human Body Model
Figure 2a shows the Human Body Model, and Figure 2b shows the current waveform it generates when dis­charged into a low-impedance state. This model con­sists of a 100pF capacitor charged to the ESD voltage of interest that is then discharged into the test device through a 1.5kΩ resistor.
Single- and Dual-Bidirectional Low-Level Translator
10 ______________________________________________________________________________________
Figure 1a. Rail-to-Rail Driving I/O V
L
Figure 1b. Rail-to-Rail Driving I/O V
CC
V
CC
DATA
CC
R
L
t
PD-VL-VCC
C
L
I/O V (t
RISE
t
FALL
V
L
L
,
< 10ns)
R
50Ω
V
V
CC
L
SHDN
MAX13046E/
I/O V
L
t
PD-VL-VCC
MAX13047E
I/O V
GND
S
I/O V
CC
t
RVCC
t
FVCC
I/O V (t
RISE
t
FALL
I/O V
C
L
CC
,
< 10ns)
L
CC
t
PD-VCC-VL
t
V
50Ω
FVL
CC
R
S
V
L
V
V
CC
L
SHDN
MAX13046E/
MAX13047E
DATA
I/O V
L
R
L
t
PD-VCC-VL
t
RVL
I/O V
GND
IEC 61000-4-2
The IEC 61000-4-2 standard covers ESD testing and per­formance of finished equipment; it does not specifically refer to integrated circuits. The MAX13046E/MAX13047E help to design equipment that meets Level 4 of IEC 61000-4-2 without the need for additional ESD-protection components. The major difference between tests done using the Human Body Model and IEC 61000-4-2 is high­er peak current in IEC 61000-4-2 because series resis­tance is lower in the IEC 61000-4-2 model. Hence, the ESD withstand voltage measured to IEC 61000-4-2 can be lower than that measured using the Human Body Model. Figure 3a shows the IEC 61000-4-2 model, and Figure 3b shows the current waveform for the ±8kV, IEC 61000-4-2, Level 4, ESD contact-discharge test. The Air­Gap test involves approaching the device with a charged probe. The contact-discharge method connects the probe to the device before the probe is energized.
Applications Information
Power-Supply Decoupling
To reduce ripple and the chance of transmitting incor­rect data, bypass VLand VCCto ground with a 0.1µF ceramic capacitor. To ensure full ±15kV ESD protec­tion, bypass VCCto ground with a 1µF ceramic capaci­tor. Place all capacitors as close as possible to the power-supply inputs.
I2C Level Translation
The MAX13046E/MAX13047E level shifts the data pre­sent on the I/O lines between +1.1V and +5.5V, making them ideal for level translation between a low-voltage ASIC and an I2C device. A typical application involves interfacing a low-voltage microprocessor to a +3V or +5V D/A converter, such as the MAX517.
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
______________________________________________________________________________________ 11
Figure 1c. Open-Drain Driving I/O V
L
Figure 1d. Open-Drain Driving I/O V
CC
I/O V
I/O V
CC
t
PD-VL-VCC
DATA
t
FVCC
V
CC
R
L
C
L
C
L
I/O V
I/O V
V
L
V
V
CC
L
SHDN
MAX13046E/
MAX13047E
DATA
I/O V
L
R
L
CC
t
PD-VCC-VL
L
t
RVL
I/O V
GND
CC
V
t
PD-VCC-VL
t
CC
FVL
V
L
V
V
CC
L
SHDN
MAX13046E/ MAX13047E
I/O V
L
L
t
PD-VL-VCC
CC
t
RVCC
I/O V
GND
MAX13046E/MAX13047E
1-Wire Interface Translation
The MAX13046E/MAX13047E are ideal for level transla­tion between a low-voltage ASIC and 1-Wire device. A typical application involves interfacing a low-voltage microprocessor to an external memory, such as the DS2502. The maximum data rate depends on the 1-Wire device. For the DS2502, the maximum data rate is 16.3kbps. A 5kΩ pullup resistor is recommended when interfacing with the DS2502.
Push-Pull vs. Open-Drain Driving
The MAX13046E/MAX13047E can be driven in a push­pull or open-drain configurations. For open-drain con­figuration, internal 10kΩ resistors pull up I/O VLand I/O VCCto their respective power supplies. See the
Timing
Characteristics
table for maximum data rates when
using open-drain drivers.
PCB Layout
The MAX13046E/MAX13047E require good PCB layout for proper operation and optimal rise/fall time perfor­mance. Ensure proper high-frequency PCB layout even when operating at low data rates.
Driving High-Capacitive Load
Capacitive loading on the I/O lines impacts the rise time (and fall time) of the MAX13046E/MAX13047E when dri­ving the signal lines. The actual rise time is a function of the load capacitance, parasitic capacitance, the supply voltage, and the drive impedance of the MAX13046E/ MAX13047E.
Operating the MAX13046E/MAX13047E at a low data rate does NOT increase capacitive load driving capability.
Single- and Dual-Bidirectional Low-Level Translator
12 ______________________________________________________________________________________
Figure 2b. Human Body Current Waveform
Figure 2a. Human Body ESD Test Model
Figure 3b. IEC 61000-4-2 ESD Generator Current Waveform
Figure 3a. IEC 61000-4-2 ESD Test Model
R
D
1500Ω
DISCHARGE
RESISTANCE
STORAGE CAPACITOR
DEVICE UNDER
TEST
HIGH-
VOLTAGE
DC
SOURCE
R
C
1MΩ
CHARGE-CURRENT-
LIMIT RESISTOR
C
100pF
s
IP 100%
90%
AMPERES
36.8%
10%
0
0
t
RL
TIME
t
DL
CURRENT WAVEFORM
PEAK-TO-PEAK RINGING
I
r
(NOT DRAWN TO SCALE)
R
D
330Ω
DISCHARGE
RESISTANCE
STORAGE CAPACITOR
HIGH-
VOLTAGE
DC
SOURCE
R
C
50MΩ TO 100MΩ
CHARGE-CURRENT-
LIMIT RESISTOR
C
s
150pF
I
100%
90%
PEAK
I
10%
tr = 0.7ns TO 1ns
30ns
60ns
DEVICE UNDER
TEST
t
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
______________________________________________________________________________________ 13
Typical Application Circuits
MAX13047E
SHDN
I/O V
L2
DATADATA
I/O V
CC2
0.1μF 1μF
+3.3V+1.8V
V
CC
+3.3V
SYSTEM
+1.8V
SYSTEM
V
L
I/O V
L1
I/O V
CC1
+1.8V
SYSTEM
0.1μF 1μF
V
V
CC
L
SHDN
MAX13046E
I/O V
L
I/O V
CC
+3.3V+1.8V
+3.3V
SYSTEM
DATADATA
MAX13046E/MAX13047E
Single- and Dual-Bidirectional Low-Level Translator
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
14
____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.
SPRINGER
Chip Information
PROCESS: BiCMOS
Package Information
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages
.
PACKAGE TYPE PACKAGE CODE DOCUMENT NO.
6 µDFN L611-1
21-0147
10 UTQFN V101A1CN-1
21-0028
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