Rainbow Electronics MAX1198 User Manual

General Description
The MAX1198 is a 3.3V, dual, 8-bit analog-to-digital con­verter (ADC) featuring fully differential wideband track­and-hold (T/H) inputs, driving two ADCs. The MAX1198 is optimized for low power, small size, and high-dynamic performance for applications in imaging, instrumenta­tion, and digital communications. This ADC operates from a single 2.7V to 3.6V supply, consuming only 264mW, while delivering a typical signal-to-noise and distortion (SINAD) of 48.1dB at an input frequency of 50MHz and a sampling rate of 100Msps. The T/H-driven input stages incorporate 400MHz (-3dB) input ampli­fiers. The converters may also be operated with single­ended inputs. In addition to low operating power, the MAX1198 features a 3.2mA sleep mode, as well as a
0.15µA power-down mode to conserve power during idle periods.
An internal 2.048V precision bandgap reference sets the full-scale range of the ADC. A flexible reference structure allows the use of this internal or an externally applied reference, if desired, for applications requiring increased accuracy or a different input voltage range.
The MAX1198 features parallel, CMOS-compatible three­state outputs. The digital output format can be set to two’s complement or straight offset binary through a single con­trol pin. The device provides for a separate output power supply of 1.7V to 3.6V for flexible interfacing with various logic families. The MAX1198 is available in a 7mm x 7mm, 48-pin TQFP package, and is specified for the extended industrial (-40°C to +85°C) temperature range.
Pin-compatible lower speed versions of the MAX1198 are also available. Refer to the MAX1195 data sheet for 40Msps and the MAX1197 data sheet for 60Msps. In addition to these speed grades, this family includes a multiplexed output version (MAX1196, 40Msps), for which digital data is presented time interleaved and on a single, parallel 8-bit output port.
For a 10-bit, pin-compatible upgrade, refer to the MAX1180 data sheet. With the N.C. pins of the MAX1198 internally pulled down to ground, this ADC becomes a drop-in replacement for the MAX1180.
Applications
Features
Single 2.7V to 3.6V Operation
Excellent Dynamic Performance
48.1dB/47.6dB SINAD at f
IN
= 50MHz/200MHz
66dBc/61.5dBc SFDR at fIN= 50MHz/200MHz
-72dB Interchannel Crosstalk at fIN= 50MHz
Low Power
264mW (Normal Operation)
10.6mW (Sleep Mode)
0.5µW (Shutdown Mode)
0.05dB Gain and ±0.1° Phase MatchingWide ±1V
P-P
Differential Analog Input Voltage
Range
400MHz -3dB Input Bandwidth
On-Chip 2.048V Precision Bandgap Reference
User-Selectable Output Format—Two’s
Complement or Offset Binary
Pin-Compatible 8-Bit and 10-Bit Upgrades
Available
MAX1198
Dual, 8-Bit, 100Msps, 3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
________________________________________________________________ Maxim Integrated Products 1
Pin Configuration
Ordering Information
19-2412; Rev 0; 4/02
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
Functional Diagram and Pin Compatible Upgrades table appear at end of data sheet.
*EP = Exposed paddle
Baseband I/Q Sampling
Multichannel IF Sampling Ultrasound and Medical
Imaging Battery-Powered
Instrumentation
WLAN, WWAN, WLL, MMDS Modems
Set-Top Boxes
VSAT Terminals
PART TEMP RANGE PIN-PACKAGE
MAX1198ECM -40°C to +85°C 48 TQFP-EP*
REFN
REFP
REFIN
REFOUT
D7A
D6A
D5A
D4A
D3A
D2A
D1A
D0A
COM
V GND INA+ INA-
V GND INB­INB+ GND
V
CLK
4847464544434241403938
1
2
DD
3
4
5
6
DD
7
8
9
10
11
DD
12
1314151617181920212223
GND
MAX1198
DD
DD
V
V
GND
TQFP-EP
OE
PD
T/B
SLEEP
D7B
D6B
D5B
37
24
D4B
36
N.C. N.C.
35
OGND
34
OV
33
DD
OV
32
DD
OGND
31
N.C.
30
N.C.
29
D0B
28
D1B
27
D2B
26
D3B
25
MAX1198
Dual, 8-Bit, 100Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD= 3.3V, OVDD= 2.5V, 0.1µF and 2.2µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a 10kresistor, V
IN
= 2V
P-P
(differential with respect to COM), CL= 10pF at digital outputs, f
CLK
= 100MHz, TA= T
MIN
to T
MAX
, unless
otherwise noted. +25°C guaranteed by production test, <+25°C guaranteed by design and characterization. Typical values are at T
A
= +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
VDD, OVDDto GND ...............................................-0.3V to +3.6V
OGND to GND.......................................................-0.3V to +0.3V
INA+, INA-, INB+, INB- to GND ...............................-0.3V to V
DD
REFIN, REFOUT, REFP, REFN,
COM, CLK to GND .................................-0.3V to (V
DD
+ 0.3V)
OE, PD, SLEEP, T/B, D7A–D0A,
D7B–D0B to OGND .............................-0.3V to (OV
DD
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
48-Pin TQFP (derate 12.5mW/°C above +70°C).........1000mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
DC ACCURACY
Resolution 8 Bits
PARAMETER SYMBOL CONDITIONS MIN T YP MAX UNITS
Integral Nonlinearity INL fIN = 7.5MHz (Note 1) ±0.3 ±1 LSB
f
= 7.5MHz, no missing codes guaranteed
Differential Nonlinearity DNL
Offset Error ±4%FS Gain Error ±4%FS Gain Temperature Coefficient ±100 ppm/°C
ANALOG INPUT
Differential Input Voltage Range V
Common-Mode Input Voltage Range
Input Resistance R
Input Capacitance C
CONVERSION RATE
Maximum Clock Frequency f
Data Latency 5
DYNAMIC CHARACTERISTICS (f
Signal-to-Noise Ratio SNR
DIFF
V
CM
IN
IN
CLK
= 100MHz, 4096-point FFT)
CLK
IN
(Note 1)
Differential or single-ended inputs ±1.0 V
Switched capacitor load 57 k
100 MHz
f
= 7.5MHz at -1dB FS 48.5
INA or B
f
= 20MHz at -1dB FS 47.0 48.3
INA or B
f
= 50MHz at -1dB FS 48.3
INA or B
f
= 115.1MHz at -1dB FS 48.1
INA or B
±0.2 ±1 LSB
V
/ 2
D D
±0.2
5pF
Clock
Cycles
dB
V
MAX1198
Dual, 8-Bit, 100Msps, 3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(VDD= 3.3V, OVDD= 2.5V, 0.1µF and 2.2µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a 10kresistor, V
IN
= 2V
P-P
(differential with respect to COM), CL= 10pF at digital outputs, f
CLK
= 100MHz, TA= T
MIN
to T
MAX
, unless
otherwise noted. +25°C guaranteed by production test, <+25°C guaranteed by design and characterization. Typical values are at T
A
= +25°C.)
Signal-to-Noise and Distortion SINAD
Spurious-Free Dynamic Range SFDR
Third-Harmonic Distortion HD3
Intermodulation Distortion (First Five Odd-Order IMDs)
Third-Order Intermodulation Distortion
Total Harmonic Distortion (First Four Harmonics)
Small-Signal Bandwidth Input at -20dB FS, differential inputs 500 MHz
Full-Power Bandwidth FPBW Input at -1dB FS, differential inputs 400 MHz
Gain Flatness (12MHz Spacing)
Aperture Delay t
Aperture Jitter t Overdrive Recovery Time For 1.5 × full-scale input 2 ns IN T ER N A L REF ER EN C E ( RE FIN = RE FOU T thr oug h 10k r esi stor ; RE FP , RE FN , and C OM l evel s ar e g ener ated i nter nal l y. )
Reference Output Voltage V
Positive Reference Output Voltage
Negative Reference Output Voltage
Common-Mode Level V
PARAMETER SYMBOL CONDITIONS MIN T YP MAX UNITS
f
= 7.5MHz at -1dB FS 48.3
INA or B
f
= 20MHz at -1dB FS 46.5 48.2
IMD
INA or B
f
= 50MHz at -1dB FS 48.1
INA or B
f
= 115.1MHz at -1dB FS 48
INA or B
f
= 7.5MHz at -1dB FS 67
INA or B
f
= 20MHz at -1dB FS 60 67
INA or B
f
= 50MHz at -1dB FS 66
INA or B
f
= 115.1MHz at -1dB FS 65
INA or B
f
= 7.5MHz at -1dB FS - 67
INA or B
f
= 20MHz at -1dB FS - 67
INA or B
f
= 50MHz at -1dB FS - 67
INA or B
f
= 115.1MHz at -1dB FS - 66
INA or B
f
IN1(A or B)
f
IN2(A or B)
= 1.989MHz at -7dB FS = 2.038MHz at -7dB FS
- 69.5 dBc
dB
dBc
dBc
(Note 2)
IM3
f
IN1(A or B)
f
IN2(A or B)
= 1.989MHz at -7dB FS = 2.038MHz at -7dB FS
- 80 dBc
(Note 2)
f
= 7.5MHz at -1dB FS - 66
INA or B
f
= 20MHz at -1dB FS - 67 - 57
THD
INA or B
f
= 50MHz at -1dB FS - 64
INA or B
f
= 115.1MHz at -1dB FS - 58
INA or B
f
IN1(A or B)
f
IN2(A or B)
= 106MHz at -1dB FS = 118MHz at -1dB FS
dBc
0.05 dB
(Note 3)
AD
AJ
REFOUT
V
REFP
V
REFN
COM
1dB SNR degradation at Nyquist 2 ps
(Note 4)
(Note 5) 2.162 V
(Note 5) 1.138 V
(Note 5)
1ns
RMS
2.048 ± 3%
V
D D
±0.1
/ 2
V
V
MAX1198
Dual, 8-Bit, 100Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs
4 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(VDD= 3.3V, OVDD= 2.5V, 0.1µF and 2.2µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a 10kresistor, V
IN
= 2V
P-P
(differential with respect to COM), CL= 10pF at digital outputs, f
CLK
= 100MHz, TA= T
MIN
to T
MAX
, unless
otherwise noted. +25°C guaranteed by production test, <+25°C guaranteed by design and characterization. Typical values are at T
A
= +25°C.)
Differential Reference Output Voltage Range
Reference Temperature Coefficient
BUFFERED EXTERNAL REFERENCE (V
Positive Reference Output Voltage
Negative Reference Output Voltage
Common-Mode Level V
Differential Reference Output Voltage Range
REFIN Resistance R
Maximum REFP, COM Source Current
Maximum REFP, COM Sink Current
Maximum REFN Source Current I
Maximum REFN Sink Current I
U N B U F F ER ED EXT ER N A L R EF ER EN C E ( V
REFP, REFN Input Resistance
REFP, REFN, COM Input Capacitance
Differential Reference Input Voltage Range
COM Input Voltage Range V
REFP Input Voltage V
REFN Input Voltage V
DIGITAL INPUTS (CLK, PD, OE, SLEEP, T/B)
Input High Threshold V
PARAMETER SYMBOL CONDITIONS MIN T YP MAX UNITS
V
REF
TC
REF
REFIN
V
REFP
V
REFN
COM
V
REF
REFIN
I
SOURCE
I
SINK
SOURCE
SINK
R
REFP
R
REFN
C
IN
V
REF
COM
REFP
REFN
IH
V
REF
= V
REFP
- V
REFN
= 2.048V)
(Note 5) 2.162 V
(Note 5) 1.138 V
(Note 5)
V
= V
REF
= AGN D , r efer ence vol tag e ap p l i ed to RE FP , RE FN , and C OM )
RE F IN
,
Measured between REFP, COM, REFN,
REFP
- V
REFN
and COM
V
= V
REF
CLK
PD, OE, SLEEP, T/B
REFP
- V
REFN
0.8 ×
V
0.8 ×
OV
1.024 ± 3%
±100 ppm/°C
V
/ 2
D D
± 0.1
1.024 ± 2%
> 50 M
5mA
- 250 µA
250 µA
- 5mA
4k
15 pF
1.024
±10%
V
/ 2
D D
±5%
V
+
C OM
V
/ 2
RE F
V
-
C OM
V
/ 2
RE F
DD
DD
V
V
V
V
V
V
V
V
MAX1198
Dual, 8-Bit, 100Msps, 3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
_______________________________________________________________________________________ 5
ELECTRICAL CHARACTERISTICS (continued)
(VDD= 3.3V, OVDD= 2.5V, 0.1µF and 2.2µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a 10kresistor, V
IN
= 2V
P-P
(differential with respect to COM), CL= 10pF at digital outputs, f
CLK
= 100MHz, TA= T
MIN
to T
MAX
, unless
otherwise noted. +25°C guaranteed by production test, <+25°C guaranteed by design and characterization. Typical values are at T
A
= +25°C.)
Input Low Threshold V
Input Hysteresis V
Input Leakage
Input Capacitance C
DIGITAL OUTPUTS ( D7A–D0A, D7BD0B)
Output Voltage Low V
Output Voltage High V
Three-State Leakage Current I
Three-State Output Capacitance C
POWER REQUIREMENTS
Analog Supply Voltage Range V
Output Supply Voltage Range OV
Analog Supply Current I
Output Supply Current I
Analog Power Dissipation PDISS
Power-Supply Rejection PSRR
TIMING CHARACTERISTICS
CLK Rise to Output Data Valid Time
OE Fall to Output Enable Time t OE Rise to Output Disable Time t
CLK Pulse Width High t
CLK Pulse Width Low t
PARAMETER SYMBOL CONDITIONS MIN T YP MAX UNITS
0.2 ×
V
DD
0.2 ×
OV
±20
DD
V
µA
5pF
V
±10 µA
5pF
mA
210
µA
mW
IL
HYST
I
IH
I
IL
IN
OL
OH
LEAK
OUT
DD
DD
VDD
OVDD
CLK
PD, OE, SLEEP, T/B
0.15 V
VIH = VDD = OV
DD
VIL = 0 ±20
I
= -200µA 0.2 V
SINK
OV
-
I
SOURCE
OE = OV OE = OV
= 200µA
DD
DD
DD
0.2
2.7 3.3 3.6 V
CL = 15pF 1.7 2.5 3.6 V
Operating, f applied to both channels
= 20MHz at -1dB FS
INA & B
80 95
Sleep mode 3.2 Shutdown, clock idle, PD = OE = OV
Operating, f
= 20MHz at -1dB FS
INA & B
applied to both channels (Note 6)
DD
0.15 20 µA
11.5 mA
Sleep mode 2 Shutdown, clock idle, PD = OE = OV
Operating, f
= 20MHz at -1dB FS
INA & B
applied to both channels
DD
264 314
Sleep mode 10.6
0.5 66 µW
mV/V
5ns
5ns
t
DO
ENABLE
DISABLE
CH
CL
Shutdown, clock idle, PD = OE = OV
DD
Offset, VDD ±5% ±3
Gain, V
±5% ±3
DD
CL = 20pF (Notes 1, 7) 6 8.25 ns
Clock period: 10ns (Note 7) 5 ± 0.5 ns
Clock period: 10ns (Note 7) 5 ± 0.5 ns
MAX1198
Dual, 8-Bit, 100Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs
6 _______________________________________________________________________________________
Note 1: Guaranteed by design. Not subject to production testing. Note 2: Intermodulation distortion is the total power of the intermodulation products relative to the total input power. Note 3: Analog attenuation is defined as the amount of attenuation of the fundamental bin from a converted FFT between two
applied input signals with the same magnitude (peak-to-peak) at f
IN1
and f
IN2
.
Note 4: REFIN and REFOUT should be bypassed to GND with a 0.1µF (min) and 2.2µF (typ) capacitor. Note 5: REFP, REFN, and COM should be bypassed to GND with a 0.1µF (min) and 2.2µF (typ) capacitor. Note 6: Typical analog output current at f
INA & B
= 20MHz. For digital output currents vs. analog input frequency,
see Typical Operating Characteristics.
Note 7: See Figure 3 for detailed system timing diagrams. Clock to data valid timing is measured from 50% of the clock
level to 50% of the data output level.
Note 8: Crosstalk rejection is tested by applying a test tone to one channel and holding the other channel at DC level.
Crosstalk is measured by calculating the power ratio of the fundamental of each channels FFT.
Note 9: Amplitude matching is measured by applying the same signal to each channel and comparing the magnitude of the funda-
mental of the calculated FFT.
Note 10: Phase matching is measured by applying the same signal to each channel and comparing the phase of the fundamental
of the calculated FFT. The data from both ADC channels must be captured simultaneously during this test.
Note 11: SINAD settles to within 0.5dB of its typical value in unbuffered external reference mode.
ELECTRICAL CHARACTERISTICS (continued)
(VDD= 3.3V, OVDD= 2.5V, 0.1µF and 2.2µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a 10kresistor, V
IN
= 2V
P-P
(differential with respect to COM), CL= 10pF at digital outputs, f
CLK
= 100MHz, TA= T
MIN
to T
MAX
, unless
otherwise noted. +25°C guaranteed by production test, <+25°C guaranteed by design and characterization. Typical values are at T
A
= +25°C.)
Wake-Up Time t
CHANNEL-TO-CHANNEL MATCHING
Crosstalk f
Gain Matching f
Phase Matching f
PARAMETER SYMBOL CONDITIONS MIN T YP MAX UNITS
WAKE
Wake up from sleep mode 1
Wake up from shutdown mode (Note 11) 20
= 20MHz at -1dB FS (Note 8) - 72 dB
INA or B
= 20MHz at -1dB FS (Note 9) 0.05 dB
INA or B
= 20MHz at -1dB FS (Note 10) ± 0.1 Degrees
INA or B
µs
MAX1198
Dual, 8-Bit, 100Msps, 3.3V, Low-Power ADC
with Internal Reference and Parallel Outputs
_______________________________________________________________________________________ 7
Typical Operating Characteristics
(VDD= 3.3V, OVDD= 2.5V, V
REFIN
= 2.048V, differential input at -1dB FS, f
CLK
= 100MHz, CL≈ 10pF, TA= +25°C, unless otherwise
noted.)
FFT PLOT CHA (DIFFERENTIAL INPUT,
FFT PLOT CHA (DIFFERENTIAL INPUT,
8192-POINT DATA RECORD)
MAX1198 toc01
0
-10
-20
-30
-40
-50
AMPLITUDE (dB)
-60
-70
-80
-90 050
TWO-TONE IMD PLOT (DIFFERENTIAL INPUT,
0
-10
-20
-30
-40
-50
AMPLITUDE (dB)
-60
-70
-80
-90
f
INA
f
INB
050
ANALOG INPUT FREQUENCY (MHz)
f
= 100.050607MHz
CLK
= 19.8708908MHz
f
INA
= 7.5355498MHz
f
INB
AIN = -1dB FS COHERENT SAMPLING
HD3
HD2
454030 3510 15 20 255
TWO-TONE IMD PLOT (DIFFERENTIAL INPUT,
8192-POINT DATA RECORD)
MAX1198 toc04
AMPLITUDE (dB)
0
f
CLK
-10
f
IN1
f
IN2
-20 AIN = -7dB FS
COHERENT SAMPLING
-30
-40
-50
-60
-70
-80
-90
0
-10
-20
-30
-40
-50
AMPLITUDE (dB)
-60
-70
-80
-90
f
= 100.007936MHz
CLK
= 1.989904MHz
f
IN1
= 2.038736MHz
f
IN2
AIN = -7dB FS COHERENT SAMPLING
f
IN1
ANALOG INPUT FREQUENCY (MHz)
f
IN2
4.54.03.0 3.51.0 1.5 2.0 2.50.50 5.0
8192-POINT DATA RECORD)
f
= 100.050607MHz
CLK
= 49.7443997MHz
f
INA
= 19.8708908MHz
f
INB
AIN = -1dB FS COHERENT SAMPLING
f
HD2
= 100.007936MHz = 10.022768MHz = 10.047184MHz
INB
ANALOG INPUT FREQUENCY (MHz)
8192-POINT DATA RECORD)
f
IN1
ANALOG INPUT FREQUENCY (MHz)
f
IN2
FFT PLOT CHA (DIFFERENTIAL INPUT,
8192-POINT DATA RECORD)
0
-10
MAX1198 toc02
-20 f
INA
f
INA
HD3
454030 3510 15 20 255
-30
-40
-50
AMPLITUDE (dB)
f
INB
-60
-70
-80
-90
050
ANALOG INPUT FREQUENCY (MHz)
f
= 100.050607MHz
CLK
= 114.9629350MHz
f
INA
= 99.5010126MHz
f
INB
AIN = -1dB FS COHERENT SAMPLING
HD3
HD2
454030 3510 15 20 255
SIGNAL-TO-NOISE RATIO
vs. ANALOG INPUT FREQUENCY
50
MAX1198 toc05
12111098713
48
46
SNR (dB)
44
42
40
0200
ANALOG INPUT FREQUENCY (MHz)
CHB
CHA
1601208040
MAX1198 toc03
MAX1198 toc06
SIGNAL-TO-NOISE + DISTORTION
vs. ANALOG INPUT FREQUENCY
50
48
46
SNR (dB)
44
42
40
0200
CHA
MAX1198 toc07
CHB
THD (dBc)
1601208040
ANALOG INPUT FREQUENCY (MHz)
TOTAL HARMONIC DISTORTION vs. ANALOG INPUT FREQUENCY
-40
-48
-56
-64
-72
-80
ANALOG INPUT FREQUENCY (MHz)
CHA
CHB
SPURIOUS-FREE DYNAMIC RANGE
vs. ANALOG INPUT FREQUENCY
80
MAX1198 toc08
16012080400200
72
64
SFDR (dBc)
56
48
40
CHA
CHB
ANALOG INPUT FREQUENCY (MHz)
MAX1198 toc09
16012080400200
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