LM32 Dual Thermal Diode Temperature Sensor with SensorPath
May 2004
SensorPath
™
Bus
General Description
The LM32 is a digital temperature sensor that measures 3
temperature zones and has a single-wire interface compatible with National Semiconductor’s SensorPath bus. SensorPath data is pulse width encoded, thereby allowing the LM32
to be easily connected to many general purpose microcontrollers. Several National Semiconductor Super I/O products include a fully integrated SensorPath master, that when
connected to an LM32 can realize a hardware monitor function that includes limit checking for measured values, autonomous fan speed control and many other functions.
The LM32 measures the temperature of its own die as well
as two external devices such as a processor thermal diode
or a diode connected transistor. The LM32 can resolve temperatures up to 255˚C and down to -256˚C. The operating
temperature range of the LM32 is 0˚C to +125˚C. The address programming pin allows two LM32s to be placed on
one SensorPath bus.
Features
n SensorPath Interface
— 2 hardware programmable addresses
Typical Application
n 2 remote diode temperature sensor zones
n Internal local temperature zone
n 0.5 ˚C resolution
n Measures temperatures up to 140 ˚C
n 14-lead TSSOP package
Key Specifications
n Temperature Sensor Accuracy
n Temperature Range:
— LM32 junction0 ˚C to +85 ˚C
— Remote Temp Accuracy0 ˚C to +100 ˚C
n Power Supply Voltage+3.0 V to +3.6 V
n Average Power Supply Current0.5 mA (typ)
n Conversion Time (all Channels)22.5ms to 1456ms
±
3 ˚C (max)
Applications
n Microprocessor based equipment
(Motherboards, Video Cards, Base-stations, Routers,
ATMs, Point of Sale, …)
n Power Supplies
20071101
SensorPath™is a trademark of National Semiconductor Corporation
3V+/+3.3V_SBYPositive power supply pinConnected system 3.3 V standby power and
4SWDSensorPath Bus line; Open-drain
5ADDDigital input - device number select
8, 10D1-, D2-Thermal diode analog voltage
9, 11D1+, D2+Thermal diode analog current
NCNo ConnectMay be tied to V+, GND or left floating
to a 0.1 µF bypass capacitor in parallel with
100 pF. A bulk capacitance of approximately
10 µF needs to be in the near vicinity of the
LM32.
Super I/O, Pull-up resistor, 1.6k
output
Pull-up to 3.3 V or pull-down to GND resistor,
input for the serial bus device
number
output and negative monitoring
input
output and positive monitoring input
10k; must never be left floating
Remote Thermal Diode cathode
(THERM_DC) - Diode 1 should always be
connected to the processor thermal diode.
Diode 2 may be connected to an MMBT3904
or GPU thermal diode. A 100 pF capacitor
should be connected between respective D-
and D+ for noise filtering.
Remote Thermal Diode anode (THERM_DA) -
Diode 1 should always be connected to the
processor thermal diode. Diode 2 may be
connected to an MMBT3904 or GPU thermal
diode. A 100 pF capacitor should be
connected between respective D- and D+ for
noise filtering.
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Block Diagram
LM32
20071103
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Absolute Maximum Ratings
LM32
(Notes 2, 1)
Supply Voltage (V
+
)−0.5 V to 6.0 V
Storage Temperature−65˚C to +150˚C
Soldering process must comply with National’s reflow
temperature profile specifications. Refer to
www.national.com/packaging/. (Note 6)
Voltage at Any Digital Input or
Output Pin−0.5 V to 6.0 V
Voltage on D1+ and D2+−0.5 V to (V+ + 0.05 V)
Current on D1- and D2-
Input Current per Pin(Note 3)
Package Input Current (Note 3)
±
1mA
±
5mA
±
30 mA
Package Power Dissipation(Note 4)
Output Sink Current10 mA
ESD Susceptibility (Note 5)
Human Body Model2500 V
Operating Ratings
(Notes 1, 2)
Temperature Range for Electrical Characteristics
LM32CIMT (T
MIN≤TA≤TMAX
Operating Temperature Range0˚C ≤ T
Remote Diode Temperature (T
Range-5˚C ≤T
Supply Voltage Range (V+)+3.0 V to +3.6 V
)0˚C ≤ TA≤ +85˚C
)
D
Machine Model250 V
DC Electrical Characteristics
The following specifications apply for V+ = +3.0 VDCto +3.6 VDC, and all analog source impedance RS=50Ω unless other-
wise specified in the conditions. Boldface limits apply for LM32CIMT T
= +25˚C. TAis the ambient temperature of the LM32; TJis the junction temperature of the LM32; TDis the junction tem-
T
A
A=TJ=TMIN
=0˚C to T
perature of the remote thermal diode.
POWER SUPPLY CHARACTERISTICS
SymbolParameterConditions
Typical
(Note 7)
V+Power Supply Voltage3.3
I+
Shutdown
Shutdown Power Supply Current
SensorPath Bus Inactive
(Note 9)
SensorPath Bus Inactive; all
I+
Average
I+
Peak
Average Power Supply Current
Peak Power Supply Current
sensors enabled;
=182 ms; (Note 9)
t
CONV
SensorPath Bus Inactive
(Note 9)
Power-On Reset Threshold Voltage
TEMPERATURE-TO-DIGITAL CONVERTER CHARACTERISTICS
ParameterConditions
Temperature Accuracy Using the Remote Thermal
Diode, see (Note 11) for Thermal Diode Processor
Type.
Temperature Accuracy Using the Local DiodeT
T
J
= 0˚C to
TD= +25˚C
+85˚C
T
= 0˚C to
J
+85˚C
T
= 0˚C to
J
+85˚C
= 0˚C to +85˚C (Note 10)
J
TD= 0˚C to
+100˚C
TD= +100˚C to
+125˚C
Typical
(Note 7)
Remote Diode and Local Temperature Resolution10Bits
D− Source Voltage0.7V
Diode Source Current
(V
D+−VD−
Low Current11.75µA
) = +0.65 V; High Current188280µA (max)
Diode Source Current High Current to Low Current
Ratio
=85˚C; all other limits
MAX
Limits
(Note 8)
3.0
3.6
260420µA (max)
900µA (max)
3.3mA (max)
1.6V (min)
2.8V (max)
Limits
(Note 8)
±
1
±
1
±
2.5˚C (max)
±
3˚C (max)
±
4˚C (max)
±
3˚C (max)
0.5˚C
16
≤ +125˚C
A
≤+140 ˚C
D
Units
(Limit)
V (min)
V (max)
Units
(Limits)
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SWD and ADD DIGITAL INPUT CHARACTERISTICS
SymbolParameterConditions
SWD Logical High Input Voltage2.1V (min)
SWD Logical Low Input Voltage0.8V (max)
ADD Logical High Input Voltage90%xV+V (min)
ADD Logical Low Input Voltage10%xV+V (max)
Input Hysteresis300mV
SWD and ADD Input CurrentGND ≤ VIN≤ V+
SWD Input Current with V+ Open or
Grounded
GND ≤ V
≤ 3.6V,
IN
and V+ Open or
V
V
IH
V
IL
V
IH
V
IL
HYST
I
L
GND
C
IN
Digital Input Capacitance10pF
SWD DIGITAL OUTPUT CHARACTERISTICS
SymbolParameterConditions
V
OL
Open-drain Output Logic “Low”
Voltage
I
OH
C
OUT
Open-drain Output Off Current
Digital Output Capacitance10pF
IOL= 4mA0.4V (max)
I
= 50µA0.2V (max)
OL
Typical
(Note 7)
Limits
(Note 8)
V+ + 0.5V (max)
-0.5V (min)
±
0.005
±
0.005µA
Typical
(Note 7)
±
0.005
±
10µA (max)
Limits
(Note 8)
±
10µA (max)
LM32
Units
(Limit)
Units
(Limit)
AC Electrical Characteristics
The following specification apply for V+ = +3.0 VDCto +3.6 VDC, unless otherwise specified. Boldface limits apply for
T
A=TJ=TMIN
=0˚C to T
specification revision 0.98. Please refer to that speciation for further details.
SymbolParameterConditions
HARDWARE MONITOR CHARACTERISTICS
t
CONV
Total Monitoring Cycle Time (Note 12)All Temperature readings
SensorPath Bus CHARACTERISTICS
t
INACT
t
f
t
r
SWD fall time (Note 15)R
SWD rise time (Note 15)R
Minimum inactive time (bus at high level)
guaranteed by the slave before an attention
request
t
Mtr0
Master drive for Data Bit 0 write and for Data
Bit 0-1read
t
Mtr1
t
SFEdet
t
SLout1
t
MtrS
t
SLoutA
t
RST
Master drive for Data Bit 1 write35.4µs (min)
Time allowed for LM32 activity detection9.6µs (max)
LM32 drive for Data Bit 1 read by master28.3µs (min)
Master drive for Start Bit80µs (min)
LM32 drive for Attention Request165µs (min)
Master or LM32 drive for Reset354µs (min)
=85˚C; all other limits TA=TJ= 25˚C. The SensorPath Characteristics conform to the SensorPath
MAX
Typical
(Note 7)
Limits
(Note 8)
182163.8ms (min)
(Default)
=1.25 kΩ±30%,
pull-up
=400 pF
C
L
=1.25 kΩ±30%,
pull-up
=400 pF
C
L
200.2ms (max)
300ns (max)
1000ns (max)
11µs (min)
11.8µs (min)
17.0µs (max)
48.9µs (max)
38.3µs (max)
109µs (max)
228µs (max)
Units
(Limits)
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AC Electrical Characteristics (Continued)
LM32
The following specification apply for V+ = +3.0 VDCto +3.6 VDC, unless otherwise specified. Boldface limits apply for
T
A=TJ=TMIN
=0˚C to T
=85˚C; all other limits TA=TJ= 25˚C. The SensorPath Characteristics conform to the SensorPath
MAX
specification revision 0.98. Please refer to that speciation for further details.
SymbolParameterConditions
t
RST_MAX
Maximum drive of SWD by an LM32, after the
Typical
(Note 7)
Limits
(Note 8)
500ms (max)
power supply is raised above 3V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: All voltages are measured with respect to GND, unless otherwise noted.
Note 3: When the input voltage (V
components and/or ESD protection circuitry are shown below for the LM32’s pins. The nominal breakdown voltage of the zener is 6.5 V. SNP stands for snap-back
device.
) at any pin exceeds the power supplies (V
IN
IN
<
GND or V
>
V+), the current at that pin should be limited to 5 mA. Parasitic
IN
Units
(Limits)
PIN#Pin
Name
Pin
Circuit
All Input Structure Circuits
1NC A
2GNDB
V+/
3
3.3V SB
B
4SWDA
5ADDA
6NCnone
7NCnone
Circuit A
Circuit B
8D1-C
9D1+D
10D2-C
11D2+D
12NCnone
13NCnone
14NCA
Note 4: Thermal resistance junction-to-ambient in still air when attached to a printed circuit board with 1 oz. foil is 148 ˚C/W.
Note 5: Human body model, 100 pF discharged through a 1.5 kΩ resistor. Machine model, 200 pF discharged directly into each pin.
Note 6: Reflow temperature profiles are different for lead-free and non lead-free packages.
Note 7: “Typicals” are at T
Note 8: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Note 9: The supply current will not increase substantially with a SensorPath transaction.
Note 10: Local temperature accuracy does not include the effects of self-heating. The rise in temperature due to self-heating is the product of the internal power
dissipation of the LM32 and the thermal resistance. See (Note 4) for the thermal resistance to be used in the self-heating calculation.
Note 11: The accuracy of the LM32CIMT is guaranteed when using the thermal diode of an Intel 90 nm Pentium 4 processor or any thermal diode with a non-ideality
factor of 1.011 and series resistance of 3.33Ω. When using a MMBT3904 type transistor as a thermal diode the error band will be typically shifted by -4.5 ˚C.
Note 12: This specification is provided only to indicate how often temperature data are updated.
Note 13: The output fall time is measured from (V
Note 14: The output rise time is measured from (V
Note 15: The rise and fall times are not tested but guaranteed by design.
= 25˚C and represent most likely parametric norm. They are to be used as general reference values not for critical design calculations.
A
IH min
IL max
Circuit C
)to(V
IL max
)to(V
IH min
Circuit D
).
).
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Timing Diagrams
LM32
20071104
FIGURE 1. Timing for Data Bits 0, 1 and Start Bit. See Section 1.2 "SensorPath BIT SIGNALING" for further details.
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Timing Diagrams (Continued)
LM32
FIGURE 2. Timing for Attention Request and Reset. See Section 1.2 "SensorPath BIT SIGNALING" for further details.
www.national.com8
20071105
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