Rainbow Electronics IRLTS6342TRPBF User Manual
PD - 97730
g
y
IRLTS6342PbF
V
V
R
DS(on) max
(@VGS = 4.5V)
R
DS(on) max
(@VGS = 2.5V)
Q
g (typical)
I
(@T
= 25°C)
A
Applications
DS
GS
D
30 V
12 V
±
17.5
22.0
m
m
11
8.3 A
nC
Ω
Ω
D
1
2
D
G
3
6
D
D
5
S
4
• System/Load Switch
Features and Benefits
Features Resulting Benefits
HEXFET® Power MOSFET
Industry-Standard TSOP-6 Packa
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification Increased Reliability
e Multi-Vendor Compatibility
⇒
Environmentally Friendlier
TSOP-6
Orderable part number Package Type Standard Pack
Form Quantit
IRLTS6342TRPBF TSOP-6 Tape and Reel 3000
Absolute Maximum Ratings
Max.
30
±12
8.3
6.7
64
2.0
1.3
0.02
-55 to + 150
V
DS
V
GS
@ TA = 25°C
I
D
I
@ TA = 70°C
D
I
DM
PD @TA = 25°C
PD @TA = 70°C
T
J
T
STG
Parameter Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor W/°C
Operating Junction and
Storage Temperature Range
c
e
e
@ 4.5V
GS
@ 4.5V
GS
Note
V
A
W
°C
Notes through are on page 2
www.irf.com 1
9/27/11
IRLTS6342PbF
)
r
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
ΔΒV
/ΔT
DSS
R
DS(on)
V
GS(th
Δ
V
GS(th)
I
DSS
I
GSS
gfs Forward Transconductance 25 ––– ––– S
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
r
Thermal Resistance
R
θJA
Drain-to-Source Breakdown Voltage 30 ––– ––– V
Breakdown Voltage Temp. Coefficient ––– 23 ––– mV/°C
J
Static Drain-to-Source On-Resistance
––– 14.0 17.5
––– 17.5 22.0
Gate Threshold Voltage 0.5 ––– 1.1 V
Gate Threshold Voltage Coefficient ––– -4.3 ––– mV/°C
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Total Gate Charge ––– 11 –––
Gate-to-Source Charge ––– 0.5 –––
Gate-to-Drain Charge ––– 4.6 –––
Gate Resistance ––– 2.2 –––
Turn-On Delay Time ––– 5.4 –––
Rise Time –––11–––
Turn-Off Delay Time ––– 32 –––
Fall Time ––– 15 –––
Input Capacitance ––– 1010 –––
Output Capacitance ––– 96 –––
Reverse Transfer Capacitance ––– 70 –––
Parameter Min. Typ. Max. Units
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
Diode Forward Voltage ––– ––– 1.2 V
Reverse Recovery Time ––– 13 20 ns
Reverse Recovery Charge ––– 5.8 8.7 nC
––– –––
––– –––
Parameter Units
Junction-to-Ambient
e
2.0
64
Typ.
–––
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, I
V
= 4.5V, ID = 8.3A
GS
Ω
m
VGS = 2.5V, ID = 6.7A
V
= VGS, ID = 10μA
DS
= 24V, VGS = 0V
V
DS
μA
nA
nC
= 24V, VGS = 0V, TJ = 125°C
V
DS
V
= 12V
GS
= -12V
V
GS
= 10V, ID = 6.4A
V
DS
V
= 4.5V
GS
V
= 15V
DS
= 6.4A
I
D
Ω
V
= 15V, VGS = 4.5V
DD
ID = 6.4A
ns
R
G
= 6.8Ω
See Figs. 18
V
= 0V
GS
= 25V
V
pF
DS
ƒ = 1.0MHz
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
TJ = 25°C, IS = 8.3A, VGS = 0V
T
= 25°C, IF = 6.4A, VDD = 24V
J
di/dt = 100/μs
d
Max.
62.5
= 1mA
D
d
d
e
G
D
S
d
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 ich square copper board.
R
is measured at T
θ
of approximately 90°C.
J
2 www.irf.com
IRLTS6342PbF
1000
TOP 10V
)
100
A
(
t
n
e
r
r
u
10
C
e
c
r
u
o
S
-
1
o
t
n
i
a
r
D
,
0.1
D
I
1.4V
≤
BOTTOM 1.4V
60μs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
TJ = 150°C
10
TJ = 25°C
1
V
= 15V
DS
≤60μs PULSE WIDTH
0.1
1.0 1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
VGS
4.5V
2.5V
2.0V
1.7V
1.6V
1.5V
100
)
A
(
t
n
e
r
10
r
u
C
e
c
r
u
o
S
o
t
-
1
n
i
a
r
D
,
D
I
0.1
1.4V
60μs PULSE WIDTH
≤
Tj = 150°C
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
o
t
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = 8.3A
V
= 4.5V
1.6
1.4
)
d
e
z
i
l
1.2
a
m
r
o
N
(
1.0
0.8
GS
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
TOP 10V
BOTTOM 1.4V
VGS
4.5V
2.5V
2.0V
1.7V
1.6V
1.5V
Fig 3. Typical Transfer Characteristics
10000
)
F
1000
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
100
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
+ Cgd, C
+ C
gd
C
iss
C
oss
C
rss
SHORTED
ds
Fig 4. Normalized On-Resistance vs. Temperature
14
)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
o
t
e
t
a
G
,
V
ID= 6.4A
12
10
8
6
4
S
G
2
VDS= 24V
VDS= 15V
VDS= 6.0V
0
10
1 10 100
0 5 10 15 20 25 30
Q
Total Gate Charge (nC)
G
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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