Rainbow Electronics IRFTS9342TRPBF User Manual

Q

Absolute Maximum Ratings

V

ID @ TA = 25°C

Continuous Drain Current, V

@ 4.5V

Continuous Drain Current, V

@ 4.5V

Pulsed Drain Current

c

PD @TA = 25°C

T

Note

Form

Quantity

IRFTS9342TRPbF

TSOP-6

Tape and Reel

3000

Features

Benefits

Industry-Standard TSOP-6 Package

Multi-Vendor Compatibility

⇒

MSL1, Consumer Qualification

Increased Reliability

PD - 96411A

IRFTS9342PbF

HEXFET® Power MOSFET

V

DS

V

GS max

R

DS(on) max

(@VGS = -10V)

R

DS(on) max

(@VGS = -4.5V)

g typ

I

D

(@TA= 25°C)

-30 V

20 V

±

40

66

12

m

nC

-5.8 A

Ω

D

G

1

2

3

Top View

Applications

l Battery operated DC motor inverter MOSFET l System/Load Switch

Features and Benefits

RoHS Compliant Containing no Lead, no Bromide and no Halogen

6

5

4

results in

A

D

S

TSOP-6

Environmentally Friendlier

Orderable part number Package Type Standard Pack

Parameter Units

DS

V

GS

ID @ TA = 70°C

I

DM

@TA = 70°C

P

D

T

J

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

GS

Power Dissipation

Linear Derating Factor W/°C Operating Junction and

Storage Temperature Range

Notes  through  are on page 2

Max.

-30

±20

-5.8

-4.6

-46

2.0

1.3

0.02

-55 to + 150

V

A

W

°C

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02/29/12

IRFTS9342PbF

Thermal Resistance

θ

JA

Parameter

Min.

Typ.

Max.

Units

BV

ΔΒ

V

/ΔT

R

V

Δ

V

I

Q

–––

t

C

Diode Characteristics

Parameter

Min.

Typ.

Max.

Units

I

(Body Diode)

V

t

Q

t

Ω

di/dt = 100A/μs

e

Static @ TJ = 25°C (unless otherwise specified)

DSS

J

DS(on)

GS(th)

DSS

GSS

gfs Forward Transconductance 6.8 ––– ––– S

g

gs

gd

R

G

d(on)

r

d(off)

f

iss

oss

rss

Drain-to-Source Breakdown Voltage -30 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C

Static Drain-to-Source On-Resistance ––– 32 40

––– 53 66

Gate Threshold Voltage -1.3 ––– -2.4 V

Gate Threshold Voltage Coefficient ––– -5.5 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– -1.0

––– ––– -150

Gate-to-Source Forward Leakage ––– ––– -100

Gate-to-Source Reverse Leakage ––– ––– 100

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

––– 12 –––

––– 1.8 –––

––– 3.1 –––

Gate Resistance ––– 17 Turn-On Delay Time ––– 4.6 –––

Rise Time ––– 13 –––

Turn-Off Delay Time ––– 45 –––

Fall Time ––– 28 –––

Input Capacitance ––– 595 –––

Output Capacitance ––– 133 –––

Reverse Transfer Capacitance ––– 85 –––

VGS = 0V, ID = -250μA

Reference to 25°C, I

= -10V, ID = -5.8A

V

GS

mΩ

V

= -4.5V, ID = -4.6A

GS

= VGS, ID = -25μA

V

DS

= -24V, VGS = 0V

V

DS

μA

nA

= -24V, VGS = 0V, TJ = 125°C

V

DS

= -20V

V

GS

= 20V

V

GS

VDS = -10V, ID = -4.6A

= -15V

V

DS

= -10V

V

nC

GS

I

= -4.6A

D

Ω

V

= -15V, VGS = -10V

DD

I

= -4.6A

D

ns

R

= 6.8

G

V

= 0V

GS

= -25V

V

pF

DS

ƒ = 1.0KHz

Conditions

= -1mA

D

e

S

Continuous Source Current

(Body Diode)

SM

Pulsed Source Current

c

SD

rr

on

Diode Forward Voltage ––– ––– -1.2 V

Reverse Recovery Time ––– 20 30 ns

Reverse Recovery Charge ––– 11 17 nC

Forward Turn-On Time Time is dominated by parasitic Inductance

Parameter Typ. Max. Units

R

Notes:

Junction-to-Ambient

e

 Repetitive rating; pulse width limited by max. junction temperature.  Pulse width ≤ 400μs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.

––– ––– -2.0

––– ––– -46

Conditions

MOSFET symbol

showing the

A

integral reverse

p-n junction diode. TJ = 25°C, IS = -4.6A, VGS = 0V

T

= 25°C, IF = -4.6A, VDD = -24V

J

––– 62.5 °C/W

D

G

S

e

2 www.irf.com

IRFTS9342PbF

100

TOP -10V

) A

( t n e

r

10

u C e

c

r u o S

o

t

n

1

i a

r D

,

D

I

-

-2.8V

≤

0.1

Tj = 25°C

BOTTOM -2.8V

60μs PULSE WIDTH

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

( t

n e

r

10

u C e

c

r u o S

o

t

n

i a

r D

, I

-

D

TJ = 150°C

1

TJ = 25°C

V

DS

= -15V

≤60μs PULSE WIDTH

0.1 1 2 3 4 5 6 7

-VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

VGS

-7.0V

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

100

TOP -10V

) A

( t n e

r

10

u C e

c

r u o S

o

t

n

1

i a

r D

,

D

I

-

-2.8V

BOTTOM -2.8V

60μs PULSE WIDTH

≤

VGS

-7.0V

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

Tj = 150°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.6

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

) d e z

i

l a

m

r o

N

(

1.4

1.2

1.0

0.8

ID = -5.8A

V

= -10V

GS

0.6

-60 -40 -20 0 20 40 60 80 100 120 140160

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

10000

) F

1000

p

( e

c n a

t

i c a p a

C ,

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

oss

C

rss

+ Cgd, C

+ C

gd

iss

SHORTED

ds

10

1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

14.0

)

12.0

V

( e

g a

10.0

t

l o V

e c

r u o S

o

t

e

t a

G ,

S G

V

-

ID= -4.6A

VDS= -24V

VDS= -15V

VDS= -6.0V

8.0

6.0

4.0

2.0

0.0 0246810121416

Q

Total Gate Charge (nC)

G

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