Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
14.0
)
12.0
V
(
e
g
a
10.0
t
l
o
V
e
c
r
u
o
S
o
t
e
t
a
G
,
S
G
V
-
ID= -4.6A
VDS= -24V
VDS= -15V
VDS= -6.0V
8.0
6.0
4.0
2.0
0.0
0246810121416
Q
Total Gate Charge (nC)
G
www.irf.com3
IRFTS9342PbF
100
)
A
(
t
n
e
r
r
10
u
C
n
i
a
r
D
e
s
r
e
v
e
R
,
D
S
I
-
0.1
TJ = 150°C
TJ = 25°C
1
V
= 0V
GS
0.40.60.81.01.21.4
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
6
5
)
A
(
4
t
n
e
r
r
u
C
3
n
i
a
r
D
,
2
D
I
-
1
0
255075100125150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
100
D = 0.50
W
/
10
C
°
)
A
J
h
t
1
Z
(
e
s
n
o
p
0.1
s
e
R
l
a
m
r
e
0.01
h
T
0.001
1E-0061E-0050.00010.0010.010.1110100
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
t1 , Rectangular Pulse Duration (sec)
1000
OPERATION IN THIS AREA
)
A
100
(
t
n
e
r
r
u
C
10
e
c
r
u
o
S
-
1
o
t
n
i
a
r
D
,
0.1
D
I
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.010.1110100
VDS, Drain-to-Source Voltage (V)
LIMITED BY RDS(on)
100μsec
1msec
10msec
DC
Fig 8. Maximum Safe Operating Area
3.0
2.8
)
V
(
e
2.6
g
a
t
l
o
2.4
V
d
l
2.2
o
h
s
e
2.0
r
h
t
e
t
1.8
a
G
,
)
h
t
(
S
G
V
-
ID = -25μA
ID = -250μA
1.6
ID = -1.0mA
ID = -10mA
1.4
ID = -1.0A
1.2
1.0
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4www.irf.com
IRFTS9342PbF
)
100
Ω
m
(
e
c
n
80
a
t
s
i
s
e
R
n
60
O
e
c
r
u
o
S
-
40
o
t
n
i
a
r
D
20
,
)
n
o
(
S
D
0
R
TJ = 125°C
ID = -5.8A
TJ = 25°C
246810 12 14 16 18 20
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
120
)
J
m
(
y
100
g
r
e
n
E
e
80
h
c
n
a
l
a
v
60
A
e
s
l
u
P
40
e
l
g
n
i
S
,
20
S
A
E
0
255075100125150
Starting TJ , Junction Temperature (°C)
TOP -0.91A
BOTTOM -4.6A
I
D
-1.4A
)
220
Ω
m
(
200
e
c
n
a
180
t
s
i
s
e
160
R
n
O
e
c
r
u
o
S
o
t
n
i
a
r
D
,
)
n
o
(
S
D
R
140
120
100
80
60
40
20
Vgs = -4.5V
Vgs = -10V
01020304050
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
100
90
80
70
)
60
W
(
r
50
e
w
o
40
P
30
20
10
0
0.00010.0010.010.10110
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain CurrentFig 15. Typical Power vs. Time
D.U.T *
+
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
-
-
R
G
• di/dt controlled by R
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
G
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D.U.T. ISDWaveform
Reverse
Recovery
+
V
DD
+
-
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Current
Inductor Curent
* V
GS
Period
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
= 5V for Logic Level Devices
D =
P. W .
Period
VGS=10V
V
DD
I
SD
*
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
www.irf.com5
IRFTS9342PbF
A
(BR)
0
20K
1K
DUT
Fig 17a. Gate Charge Test Circuit
R
-V
-20V
V
DS
G
GS
t
p
D.U.T
I
AS
L
0.01
DRIVER
Ω
Id
Vgs
Vds
L
VCC
Vgs(th)
Qgs1
Qgs2QgdQgodr
Fig 17b. Gate Charge Waveform
I
AS
V
DD
15V
Fig 18a. Unclamped Inductive Test Circuit
R
V
V
GS
R
G
-V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
DS
D
D.U.T.
t
p
V
DSS
Fig 18b. Unclamped Inductive Waveforms
t
d(on)tr
V
GS
10%
-
V
+
DD
90%
V
DS
t
d(off)tf
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
6www.irf.com
TSOP-6 Package Outline
IRFTS9342PbF
TSOP-6 Part Marking Information
Y = YEAR
W = WE E K
PAR T NUMBER
LOT
TOP
PART NUMBER CODE RE FE RE NCE:
A = S I3443DV
B = IRF5800
C = IR F58 5 0
D = IR F5851
E = IRF5852
O = I RL TS 6342TR PBF
P = IR F T S8342T RPB F
R = IR F T S9342 T RPB F
S = Not applicable
T = IRL T S2242T RPB F
F = IRF5801
G = I RF5803
H = IRF 5804
I = IRF 5805
J = IR F 5806
K = IRF 5 810
N = IRF 5802
Note: A li ne above the work week
(as shown here) indicates Lead-Free.
CODE
DATE CODE MARKING INSTRUCTIONS
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
1
2
3
4
5
6
7
8
9
02010
Y
A
B
C
D
E
F
G
H
J
K
WOR K
01
02
03
04
25
26
WOR K
WEEK
27
28B
30D
50
51
A
B
C
D
X24
Y
Z
W
A
C29
X
Y
Z52
YEARYWWEEK
2011
2001
2012
2002
2013
2003
2014
2004
2015
2005
2016
2006
2017
2007
2018
2008
2019
2009
2020
WW = (27-52) IF P RE CEDED B Y A LE T T E R
YEAR
2001
2011
2002
2012
2003
2013
2004
2014
2005
2015
2006
2016
2007
2017
2008
2018
2009
2019
2010
2020
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com7
IRFTS9342PbF
TSOP-6 Tape and Reel Information
8mm
FEED DIRECTION
9.90 ( .390 )
8.40 ( .331 )
Cons umer
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification information
Qualification level
4mm
†
(per JE DEC JES D47F
Moisture Sensitivity Level
TSOP-6
(per I P C/JE DE C J-S T D- 02 0 D
RoHS compliantYes
††
†††
guidelines )
MS L 1
†††
)
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2012
8www.irf.com
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