Rainbow Electronics IRFTS9342TRPBF User Manual

Q

Absolute Maximum Ratings

V

ID @ TA = 25°C

Continuous Drain Current, V

@ 4.5V

Continuous Drain Current, V

@ 4.5V

Pulsed Drain Current

c

PD @TA = 25°C

T

Note

Form

Quantity

IRFTS9342TRPbF

TSOP-6

Tape and Reel

3000

Features

Benefits

Industry-Standard TSOP-6 Package

Multi-Vendor Compatibility

⇒

MSL1, Consumer Qualification

Increased Reliability

PD - 96411A

IRFTS9342PbF

HEXFET® Power MOSFET

V

DS

V

GS max

R

DS(on) max

(@VGS = -10V)

R

DS(on) max

(@VGS = -4.5V)

g typ

I

D

(@TA= 25°C)

-30 V

20 V

±

40

66

12

m

nC

-5.8 A

Ω

D

G

1

2

3

Top View

Applications

l Battery operated DC motor inverter MOSFET l System/Load Switch

Features and Benefits

RoHS Compliant Containing no Lead, no Bromide and no Halogen

6

5

4

results in

A

D

S

TSOP-6

Environmentally Friendlier

Orderable part number Package Type Standard Pack

Parameter Units

DS

V

GS

ID @ TA = 70°C

I

DM

@TA = 70°C

P

D

T

J

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

GS

Power Dissipation

Linear Derating Factor W/°C Operating Junction and

Storage Temperature Range

Notes  through  are on page 2

Max.

-30

±20

-5.8

-4.6

-46

2.0

1.3

0.02

-55 to + 150

V

A

W

°C

www.irf.com 1

02/29/12

IRFTS9342PbF

Thermal Resistance

θ

JA

Parameter

Min.

Typ.

Max.

Units

BV

ΔΒ

V

/ΔT

R

V

Δ

V

I

Q

–––

t

C

Diode Characteristics

Parameter

Min.

Typ.

Max.

Units

I

(Body Diode)

V

t

Q

t

Ω

di/dt = 100A/μs

e

Static @ TJ = 25°C (unless otherwise specified)

DSS

J

DS(on)

GS(th)

DSS

GSS

gfs Forward Transconductance 6.8 ––– ––– S

g

gs

gd

R

G

d(on)

r

d(off)

f

iss

oss

rss

Drain-to-Source Breakdown Voltage -30 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C

Static Drain-to-Source On-Resistance ––– 32 40

––– 53 66

Gate Threshold Voltage -1.3 ––– -2.4 V

Gate Threshold Voltage Coefficient ––– -5.5 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– -1.0

––– ––– -150

Gate-to-Source Forward Leakage ––– ––– -100

Gate-to-Source Reverse Leakage ––– ––– 100

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

––– 12 –––

––– 1.8 –––

––– 3.1 –––

Gate Resistance ––– 17 Turn-On Delay Time ––– 4.6 –––

Rise Time ––– 13 –––

Turn-Off Delay Time ––– 45 –––

Fall Time ––– 28 –––

Input Capacitance ––– 595 –––

Output Capacitance ––– 133 –––

Reverse Transfer Capacitance ––– 85 –––

VGS = 0V, ID = -250μA

Reference to 25°C, I

= -10V, ID = -5.8A

V

GS

mΩ

V

= -4.5V, ID = -4.6A

GS

= VGS, ID = -25μA

V

DS

= -24V, VGS = 0V

V

DS

μA

nA

= -24V, VGS = 0V, TJ = 125°C

V

DS

= -20V

V

GS

= 20V

V

GS

VDS = -10V, ID = -4.6A

= -15V

V

DS

= -10V

V

nC

GS

I

= -4.6A

D

Ω

V

= -15V, VGS = -10V

DD

I

= -4.6A

D

ns

R

= 6.8

G

V

= 0V

GS

= -25V

V

pF

DS

ƒ = 1.0KHz

Conditions

= -1mA

D

e

S

Continuous Source Current

(Body Diode)

SM

Pulsed Source Current

c

SD

rr

on

Diode Forward Voltage ––– ––– -1.2 V

Reverse Recovery Time ––– 20 30 ns

Reverse Recovery Charge ––– 11 17 nC

Forward Turn-On Time Time is dominated by parasitic Inductance

Parameter Typ. Max. Units

R

Notes:

Junction-to-Ambient

e

 Repetitive rating; pulse width limited by max. junction temperature.  Pulse width ≤ 400μs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.

––– ––– -2.0

––– ––– -46

Conditions

MOSFET symbol

showing the

A

integral reverse

p-n junction diode. TJ = 25°C, IS = -4.6A, VGS = 0V

T

= 25°C, IF = -4.6A, VDD = -24V

J

––– 62.5 °C/W

D

G

S

e

2 www.irf.com

IRFTS9342PbF

100

TOP -10V

) A

( t n e

r

10

u C e

c

r u o S

o

t

n

1

i a

r D

,

D

I

-

-2.8V

≤

0.1

Tj = 25°C

BOTTOM -2.8V

60μs PULSE WIDTH

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

( t

n e

r

10

u C e

c

r u o S

o

t

n

i a

r D

, I

-

D

TJ = 150°C

1

TJ = 25°C

V

DS

= -15V

≤60μs PULSE WIDTH

0.1 1 2 3 4 5 6 7

-VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

VGS

-7.0V

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

100

TOP -10V

) A

( t n e

r

10

u C e

c

r u o S

o

t

n

1

i a

r D

,

D

I

-

-2.8V

BOTTOM -2.8V

60μs PULSE WIDTH

≤

VGS

-7.0V

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

Tj = 150°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.6

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

) d e z

i

l a

m

r o

N

(

1.4

1.2

1.0

0.8

ID = -5.8A

V

= -10V

GS

0.6

-60 -40 -20 0 20 40 60 80 100 120 140160

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

10000

) F

1000

p

( e

c n a

t

i c a p a

C ,

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

oss

C

rss

+ Cgd, C

+ C

gd

iss

SHORTED

ds

10

1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

14.0

)

12.0

V

( e

g a

10.0

t

l o V

e c

r u o S

o

t

e

t a

G ,

S G

V

-

ID= -4.6A

VDS= -24V

VDS= -15V

VDS= -6.0V

8.0

6.0

4.0

2.0

0.0 0246810121416

Q

Total Gate Charge (nC)

G

www.irf.com 3

IRFTS9342PbF

100

) A

( t n e

r

10

u C n

i a

r D e

s

r e v e

R ,

D S

I

-

0.1

TJ = 150°C

TJ = 25°C

1

V

= 0V

GS

0.4 0.6 0.8 1.0 1.2 1.4

-VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

6

5

) A

(

4

t n e

r

r u

C

3

n

i a

r D ,

2

D

I

-

1

0

25 50 75 100 125 150

TA , Ambient Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

100

D = 0.50

W

/

10

C °

)

A J h

t

1

Z (

e s n o p

0.1

s e

R l a

m

r e

0.01

h T

0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

1000

OPERATION IN THIS AREA

) A

100

( t n e

r

r u

C

10

e c

r u o S

-

1

o

t

n

i a

r D ,

0.1

D

I

Tc = 25°C Tj = 150°C Single Pulse

0.01

0.01 0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

LIMITED BY RDS(on)

100μsec

1msec

10msec

DC

Fig 8. Maximum Safe Operating Area

3.0

2.8

) V

( e

2.6

g a

t

l o

2.4

V d

l

2.2

o h s e

2.0

r h

t e

t

1.8

a G

,

) h

t

( S G

V

-

ID = -25μA ID = -250μA

1.6 ID = -1.0mA

ID = -10mA

1.4 ID = -1.0A

1.2

1.0

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T A

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

4 www.irf.com

IRFTS9342PbF

)

100

Ω

m (

e c n

80

a

t s

i s e

R n

60

O e

c

r u o S

-

40

o

t

n

i a

r

D

20

,

) n o

( S D

0

R

TJ = 125°C

ID = -5.8A

TJ = 25°C

2 4 6 8 10 12 14 16 18 20

-V

Gate -to -Source Voltage (V)

GS,

Fig 12. On-Resistance vs. Gate Voltage

120

) J

m

( y

100

g

r e n E

e

80

h c n a

l a v

60

A e

s

l u P

40

e

l g n

i S ,

20

S A

E

0

25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

TOP -0.91A

BOTTOM -4.6A

I

D

-1.4A

)

220

Ω

m

(

200

e c n a

180

t s

i s e

160

R n O e

c

r u o S

o

t

n

i a

r D ,

) n o

(

S D

R

140

120

100

80

60

40

20

Vgs = -4.5V

Vgs = -10V

0 10 20 30 40 50

-ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

100

90

80

70

)

60

W

( r

50

e w

o

40

P

30

20

10

0

0.0001 0.001 0.01 0.10 1 10

Time (sec)

Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 15. Typical Power vs. Time

D.U.T *

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-



R

G

• di/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

* Reverse Polarity of D.U.T for P-Channel



Driver Gate Drive

P.W.

D.U.T. ISDWaveform

Reverse Recovery

+

V

DD

+

-

Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs

www.irf.com 5

IRFTS9342PbF

A

(BR)

0

20K

1K

DUT

Fig 17a. Gate Charge Test Circuit

R

-V

-20V

V

DS

G

GS

t

p

D.U.T

I

AS

L

0.01

DRIVER

Ω

Id

Vgs

Vds

L

VCC

Vgs(th)

Qgs1

Qgs2QgdQgodr

Fig 17b. Gate Charge Waveform

I

AS

V

DD

15V

Fig 18a. Unclamped Inductive Test Circuit

R

V

GS

R

G

-V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

DS

D

D.U.T.

t

p

V

DSS

Fig 18b. Unclamped Inductive Waveforms

t

d(on)tr

V

GS

10%

-

V

+

DD

90%

V

DS

t

d(off)tf

Fig 19a. Switching Time Test Circuit

Fig 19b. Switching Time Waveforms

6 www.irf.com

TSOP-6 Package Outline

IRFTS9342PbF

TSOP-6 Part Marking Information

Y = YEAR

W = WE E K

PAR T NUMBER

LOT

TOP

PART NUMBER CODE RE FE RE NCE:

A = S I3443DV B = IRF5800 C = IR F58 5 0 D = IR F5851 E = IRF5852

O = I RL TS 6342TR PBF P = IR F T S8342T RPB F R = IR F T S9342 T RPB F S = Not applicable

T = IRL T S2242T RPB F F = IRF5801 G = I RF5803 H = IRF 5804

I = IRF 5805 J = IR F 5806 K = IRF 5 810 N = IRF 5802

Note: A li ne above the work week (as shown here) indicates Lead-Free.

CODE

DATE CODE MARKING INSTRUCTIONS

WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

1 2 3 4 5 6 7 8 9 02010

Y

A B C D E F G H J K

WOR K

01 02 03 04

25 26

WOR K WEEK

27 28 B

30 D

50 51

A B C D

X24 Y Z

W

A

C29

X Y Z52

YEAR Y WWEEK

2011

2001

2012

2002

2013

2003

2014

2004

2015

2005

2016

2006

2017

2007

2018

2008

2019

2009

2020

WW = (27-52) IF P RE CEDED B Y A LE T T E R

YEAR

2001

2011

2002

2012

2003

2013

2004

2014

2005

2015

2006

2016

2007

2017

2008

2018

2009

2019

2010

2020

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com 7

IRFTS9342PbF

TSOP-6 Tape and Reel Information

8mm

FEED DIRECTION

9.90 ( .390 )

8.40 ( .331 )

Cons umer

NOTES :

1. OUTLINE CONFORMS TO EIA-481 & EIA-541.

178.00 ( 7.008 ) MAX.

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Qualification information

Qualification level

4mm

†

(per JE DEC JES D47F

Moisture Sensitivity Level

TSOP-6

(per I P C/JE DE C J-S T D- 02 0 D

RoHS compliant Yes

††

†††

guidelines )

MS L 1

†††

)

† Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

†† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

††† Applicable version of JEDEC standard at the time of product release.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 02/2012

8 www.irf.com

Rainbow Electronics IRFTS9342TRPBF User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual