Rainbow Electronics HT93LC46 User Manual
1K 3-Wire CMOS Serial EEPROM
Features
•
Operating voltage V
–
Read: 2.0V~5.5V
–
Write: 2.4V~5.5V
•
Low power consumption
–
Operating: 5mA max.
–
Standby: 10µA max.
•
User selectable internal organization
–
1K(HT93LC46): 128×8 or 64×16
•
3-wire Serial Interface
•
Write cycle time: 2ms max.
General Description
The HT93LC46 is a 1K-bit low voltage nonvolatile, serial electrically erasable programmable
read only memory device using the CMOS floating gate process. Its 1024 bits of memory are
organized into 64 words of 16 bits each when the
ORG pin is connected to VCC or organized into
128 words of 8 bits each when it is tied to VSS. The
CC
HT93LC46
•
Automatic erase-before-write operation
•
Word/chip erase and write operation
•
Write operation with built-in timer
•
Software controlled write protection
•
10-year data retention after 100K rewrite
cycles
•
106 rewrite cycles per word
•
8-pin DIP/SOP package
•
Commercial temp erature range
(0
°C to +70°C)
device is optimized for use in many industrial
and commercial applications where low power
and low voltage operation are essential. By
popular microcontroller, the versatile serial interface including chip select (CS), serial clock
(SK), data inpu t (DI) and data out put (DO) can
be easily controlled.
Block Diagram
1 6th May ’99
Pin Assignment
Pin Description
Pin Name I/O Description
CS I Chip select input
SK I Serial clock input
DI I Serial data input
DO O Serial data output
VSS I Negative power supply
ORG I Internal Organization
NC — No connection
VCC I Positive power supply
HT93LC46
2 6th May ’99
HT93LC46
Absolu te Maxim u m R a tin gs
Operation Temperature (Commercial) ............................................................................ ........0°C to 70°C
Applied V
Applied V oltage on any Pin with Respect to VSS
Supply READ Voltage................................................................................................................ 2V to 5.5V
Note: These are stress ratings o nly. Stresses exceeding the range specified under “Ab solute Ma xi-
D.C. Characteristics
Voltage with Respect to VSS .............................. .... .... .... .... .... .... .... .... .... .... ....–0.3V to 6.0V
CC
..............................................................VSS
–0.3V to VCC+0.3V
mum Ratings” may cause substantial damage to the device. Functional operation of this
device at other conditions beyond those listed in the specification is not implied and
prolonged exposure to extreme conditions may affect device reliability.
Symbol Parameter
V
CC
I
CC1
I
CC2
I
STB
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
C
IN
C
OUT
Operating Voltage —
Operating Current
(TTL)
Operating Current
(CMOS)
Standby Current
(CMOS)
Input Leakage
Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Input Capacitance — VIN=0V, f=250kHz — — 5 pF
Output Capacitance — V
Test Conditions
V
CC
Conditions
Min. Typ. Max. Unit
Read 2.0 — 5.5 V
Write 2.4 — 5.5 V
DO unload,
5V
5V
2~5.5V
SK=1MHz
DO unload,
SK=1MHz
DO unload,
SK=250kHz
——5mA
——5mA
——5mA
5V CS=SK=DI=0V — — 10
5V V
5V
IN=VSS~VCC
V
OUT=VSS~VCC
CS=0V
0—1µA
0—1
5V — 0 — 0.8 V
2~5.5V — 0 — 0.1V
5V — 2 — V
2~5.5V — 0.9V
5V I
2~5.5V I
5V I
2~5.5V I
=2.1mA — — 0.4 V
OL
=10µA——0.2V
OL
=–400µA2.4——V
OH
=–10µAV
OH
=0V, f=250kHz — — 5 pF
OUT
CC
–0.2 — — V
—VCCV
CC
CC
CC
µA
µA
V
V
3 6th May ’99
Loading...