DS92LV010A
Bus LVDS 3.3/5.0V Single Transceiver
General Description
The DS92LV010Ais one in a series of transceivers designed
specifically for the high speed, low power proprietary bus
backplane interfaces. The device operates from a single
3.3V or 5.0V power supply and includes one differential line
driver and one receiver. To minimize bus loading the driver
outputs and receiver inputs are internally connected. The
logic interface provides maximum flexibility as 4 separate
lines are provided (DIN, DE, RE, and ROUT). The device
also features flow through which allows easy PCB routing for
short stubs between the bus pins and the connector. The
driver has 10 mA drive capability, allowing it to drive heavily
loaded backplanes, with impedance as low as 27 Ohms.
The driver translates between TTL levels (single-ended) to
Low VoltageDifferential Signaling levels. This allows for high
speed operation, while consuming minimal power with reduced EMI. In addition the differential signaling provides
common mode noise rejection of
±
1V.
Connection Diagram
The receiver threshold is
mode range and translates the low voltage differential levels
to standard (CMOS/TTL) levels.
Features
n Bus LVDS Signaling (BLVDS)
n Designed for Double Termination Applications
n Balanced Output Impedance
n Lite Bus Loading 5pF typical
n Glitch free power up/down (Driver disabled)
n 3.3V or 5.0V Operation
±
n
1V Common Mode Range
±
n
100mV Receiver Sensitivity
n High Signaling Rate Capability (above 100 Mbps)
n Low Power CMOS design
n Product offered in 8 lead SOIC package
n Industrial Temperature Range Operation
May 1998
±
100mV over a±1V common
DS92LV010A Bus LVDS 3.3/5.0V Single Transceiver
DS100052-1
Order Number DS92LV010ATM
See NS Package Number M08A
Block Diagram
DS100052-2
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
© 1998 National Semiconductor Corporation DS100052 www.national.com
Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
Enable Input Voltage (DE,
RE)
Driver Input Voltage (DIN) −0.3V to (V
Receiver Output Voltage
)
(R
OUT
Bus Pin Voltage (DO/RI
Driver Short Circuit
Current
ESD (HBM 1.5 kΩ, 100
pF)
) 6.0V
CC
−0.3V to (VCC+
−0.3V to (V
±
) −0.3V to + 3.9V
Continuous
>
0.3V)
CC
0.3V)
CC
0.3V)
2.0 kV
+
+
SOIC 1025 mW
Derate SOIC Package 8.2 mW/˚C
Storage Temperature
Range
−65˚C to +150˚C
Lead Temperature
(Soldering, 4 sec.) 260˚C
Recommended Operating
Conditions
Min Max Units
Supply Voltage (V
Supply Voltage (V
Receiver Input Voltage 0.0 2.9 V
Operating Free Air
Temperature
), or 3.0 3.6 V
CC
) 4.5 5.5 V
CC
−40 +85 ˚C
Maximum Package Power Dissipation at 25˚C
DC Electrical Characteristics (Notes 2, 3)
TA= −40˚C to +85˚C unless otherwise noted, VCC= 3.3V±0.3V
Symbol Parameter Conditions Pin Min Typ Max Units
V
OD
∆V
OD
V
OS
∆V
OS
I
OSD
V
OH
V
OL
I
OS
V
TH
V
TL
I
IN
V
IH
V
IL
I
IH
I
IL
V
CL
I
CCD
I
CCR
I
CCZ
I
CC
Output Differential
Voltage
VODMagnitude Change 330mV
Offset Voltage 1 1.25 1.65 V
Offset Magnitude
Change
Output Short Circuit
Current
Voltage Output High VID= +100 mV IOH= −400 µA R
Voltage Output Low IOL= 2.0 mA, VID= −100 mV 0.1 0.4 V
Output Short Circuit
Current
Input Threshold High DE = 0V DO+/RI+,
Input Threshold Low −100 mV
Input Current DE = 0V, VIN= +2.4V, or 0V −20
Minimum Input High
Voltage
Maximum Input Low
Voltage
Input High Current VIN=VCCor 2.4V
Input Low Current VIN= GND or 0.4V
Input Diode Clamp
Voltage
Power Supply Current DE = RE = VCC,RL=27Ω V
RL=27Ω,
Figure 1
DO+/RI+,
140 250 360 mV
DO−/RI−
550mV
VO= 0V, DE = V
CC
OUT
−12 −20 mA
2.8 3 V
Inputs Open 2.8 3 V
Inputs Shorted 2.8 3 V
Inputs Terminated,
R
=27Ω
L
V
= 0V, VID= +100 mV −5 −35 −85 mA
OUT
2.8 3 V
+100 mV
DO−/RI−
±
1 +20 µA
V
= 0V, VIN= +2.4V, or 0V −20
CC
DIN, DE,RE2.0 V
±
1 +20 µA
CC
GND 0.8 V
±1±
10 µA
±1±
10 µA
I
= −18 mA −1.5 −0.8 V
CLAMP
CC
13 20 mA
DE=RE=0V 58mA
DE = 0V, RE = V
CC
3 7.5 mA
DE=VCC,RE=0V,RL=27Ω 16 22 mA
V
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DC Electrical Characteristics (Notes 2, 3) (Continued)
TA= −40˚C to +85˚C unless otherwise noted, VCC= 3.3V±0.3V
Symbol Parameter Conditions Pin Min Typ Max Units
C
output
Capacitance@BUS
Pins
DO+/RI+,
DO−/RI−
5pF
DC Electrical Characteristics (Notes 2, 3)
TA= −40˚C to +85˚C unless otherwise noted, VCC= 5.0V±0.5V
Symbol Parameter Conditions Pin Min Typ Max Units
V
OD
∆V
V
OS
∆V
I
OSD
V
OH
V
I
V
V
V
V
I
CCD
I
CCR
I
I
C
output
Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should
be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Note 2: All currents into device pins are positive; all currents out of device pins are negative.All voltages are referenced to device ground except V
V
Note 3: All typicals are given for V
Note 4: ESD Rating: HBM (1.5 kΩ, 100 pF)
Note 5: C
Note 6: Generator waveforms for all tests unless otherwise specified: f = 1MHz, ZO = 50Ω,tr,tf≤6.0ns (0%–100%) on control pins and ≤ 1.0ns for RI inputs.
Note 7: The DS92LV010A is a current mode device and only function with datasheet specification when a resistive load is applied between the driver outputs.
Note 8: For receiver TRI-STATE
Output Differential
Voltage
VODMagnitude Change 330mV
OD
Offset Voltage 1 1.35 1.65 V
Offset Magnitude
OS
Change
Output Short Circuit
Current
Voltage Output High VID= +100 mV IOH= −400 µA R
Voltage Output Low IOL= 2.0 mA, VID= −100 mV 0.1 0.4 V
OL
Output Short Circuit
OS
Current
Input Threshold High DE = 0V DO+/RI+,
TH
Input Threshold Low −100 mV
TL
I
Input Current DE = 0V, VIN= +2.4V, or 0V −20
IN
Minimum Input High
IH
Voltage
V
Maximum Input Low
IL
Voltage
Input High Current VIN=VCCor 2.4V
I
IH
I
Input Low Current VIN= GND or 0.4V
IL
Input Diode Clamp
CL
Voltage
Power Supply Current DE = RE = VCC,RL=27Ω V
CCZ
CC
Capacitance@BUS
Pins
unless otherwise specified.
TL
includes probe and fixture capacitance.
L
= +3.3V or 5.0 V and TA= +25˚C, unless otherwise stated.
CC
®
delays, the switch is set to VCCfor t
RL=27Ω,
Figure 1
DO+/RI+,
145 270 390 mV
DO−/RI−
550mV
VO= 0V, DE = V
CC
OUT
−12 −20 mA
4.3 5.0 V
Inputs Open 4.3 5.0 V
Inputs Shorted 4.3 5.0 V
Inputs
Terminated, R
V
= 0V, VID= +100 mV −35 −90 −130 mA
OUT
=27Ω
L
4.3 5.0 V
+100 mV
DO−/RI−
±
1 +20 µA
V
= 0V, VIN= +2.4V, or 0V −20
CC
DIN,
DE,
RE
I
= −18 mA −1.5 −0.8 V
CLAMP
GND 0.8 V
CC
±
1 +20 µA
2.0 V
±1±
±1±
17 25 mA
CC
10 µA
10 µA
DE=RE=0V 610mA
DE = 0V, RE = V
CC
38mA
DE=VCC,RE=0V,RL=27Ω 20 25 mA
DO+/RI+,
5pF
DO−/RI−
OD,VID,VTH
>
2.0 kV EAT (0Ω, 200 pF)>300V.
, and t
PZL
and to GND for t
PLZ
PZH
, and t
PHZ
.
and
V
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