Rainbow Electronics DS92LV010A User Manual

DS92LV010A Bus LVDS 3.3/5.0V Single Transceiver
General Description
The DS92LV010Ais one in a series of transceivers designed specifically for the high speed, low power proprietary bus backplane interfaces. The device operates from a single
3.3V or 5.0V power supply and includes one differential line driver and one receiver. To minimize bus loading the driver outputs and receiver inputs are internally connected. The logic interface provides maximum flexibility as 4 separate lines are provided (DIN, DE, RE, and ROUT). The device also features flow through which allows easy PCB routing for short stubs between the bus pins and the connector. The driver has 10 mA drive capability, allowing it to drive heavily loaded backplanes, with impedance as low as 27 Ohms.
The driver translates between TTL levels (single-ended) to Low VoltageDifferential Signaling levels. This allows for high speed operation, while consuming minimal power with re­duced EMI. In addition the differential signaling provides common mode noise rejection of
±
1V.
Connection Diagram
The receiver threshold is mode range and translates the low voltage differential levels to standard (CMOS/TTL) levels.
Features
n Bus LVDS Signaling (BLVDS) n Designed for Double Termination Applications n Balanced Output Impedance n Lite Bus Loading 5pF typical n Glitch free power up/down (Driver disabled) n 3.3V or 5.0V Operation
±
n
1V Common Mode Range
±
n
100mV Receiver Sensitivity
n High Signaling Rate Capability (above 100 Mbps) n Low Power CMOS design n Product offered in 8 lead SOIC package n Industrial Temperature Range Operation
May 1998
±
100mV over a±1V common
DS92LV010A Bus LVDS 3.3/5.0V Single Transceiver
DS100052-1
Order Number DS92LV010ATM
See NS Package Number M08A
Block Diagram
DS100052-2
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
© 1998 National Semiconductor Corporation DS100052 www.national.com
Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage (V Enable Input Voltage (DE,
RE) Driver Input Voltage (DIN) −0.3V to (V
Receiver Output Voltage
)
(R
OUT
Bus Pin Voltage (DO/RI Driver Short Circuit
Current ESD (HBM 1.5 k, 100
pF)
) 6.0V
CC
−0.3V to (VCC+
−0.3V to (V
±
) −0.3V to + 3.9V
Continuous
>
0.3V)
CC
0.3V)
CC
0.3V)
2.0 kV
+
+
SOIC 1025 mW Derate SOIC Package 8.2 mW/˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature
(Soldering, 4 sec.) 260˚C
Recommended Operating Conditions
Min Max Units
Supply Voltage (V Supply Voltage (V Receiver Input Voltage 0.0 2.9 V Operating Free Air
Temperature
), or 3.0 3.6 V
CC
) 4.5 5.5 V
CC
−40 +85 ˚C
Maximum Package Power Dissipation at 25˚C
DC Electrical Characteristics (Notes 2, 3)
TA= −40˚C to +85˚C unless otherwise noted, VCC= 3.3V±0.3V
Symbol Parameter Conditions Pin Min Typ Max Units
V
OD
V
OD
V
OS
V
OS
I
OSD
V
OH
V
OL
I
OS
V
TH
V
TL
I
IN
V
IH
V
IL
I
IH
I
IL
V
CL
I
CCD
I
CCR
I
CCZ
I
CC
Output Differential Voltage
VODMagnitude Change 330mV Offset Voltage 1 1.25 1.65 V Offset Magnitude
Change Output Short Circuit
Current Voltage Output High VID= +100 mV IOH= −400 µA R
Voltage Output Low IOL= 2.0 mA, VID= −100 mV 0.1 0.4 V Output Short Circuit
Current Input Threshold High DE = 0V DO+/RI+, Input Threshold Low −100 mV Input Current DE = 0V, VIN= +2.4V, or 0V −20
Minimum Input High Voltage
Maximum Input Low Voltage
Input High Current VIN=VCCor 2.4V Input Low Current VIN= GND or 0.4V Input Diode Clamp
Voltage Power Supply Current DE = RE = VCC,RL=27 V
RL=27Ω,
Figure 1
DO+/RI+,
140 250 360 mV
DO−/RI−
550mV
VO= 0V, DE = V
CC
OUT
−12 −20 mA
2.8 3 V Inputs Open 2.8 3 V Inputs Shorted 2.8 3 V Inputs Terminated,
R
=27
L
V
= 0V, VID= +100 mV −5 −35 −85 mA
OUT
2.8 3 V
+100 mV
DO−/RI−
±
1 +20 µA
V
= 0V, VIN= +2.4V, or 0V −20
CC
DIN, DE,RE2.0 V
±
1 +20 µA
CC
GND 0.8 V
±1±
10 µA
±1±
10 µA
I
= −18 mA −1.5 −0.8 V
CLAMP
CC
13 20 mA DE=RE=0V 58mA DE = 0V, RE = V
CC
3 7.5 mA
DE=VCC,RE=0V,RL=27 16 22 mA
V
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DC Electrical Characteristics (Notes 2, 3) (Continued)
TA= −40˚C to +85˚C unless otherwise noted, VCC= 3.3V±0.3V
Symbol Parameter Conditions Pin Min Typ Max Units
C
output
Capacitance@BUS Pins
DO+/RI+, DO−/RI−
5pF
DC Electrical Characteristics (Notes 2, 3)
TA= −40˚C to +85˚C unless otherwise noted, VCC= 5.0V±0.5V
Symbol Parameter Conditions Pin Min Typ Max Units
V
OD
V V
OS
V
I
OSD
V
OH
V
I
V
V
V
V
I
CCD
I
CCR
I
I
C
output
Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Note 2: All currents into device pins are positive; all currents out of device pins are negative.All voltages are referenced to device ground except V V
Note 3: All typicals are given for V Note 4: ESD Rating: HBM (1.5 k, 100 pF) Note 5: C Note 6: Generator waveforms for all tests unless otherwise specified: f = 1MHz, ZO = 50,tr,tf6.0ns (0%–100%) on control pins and 1.0ns for RI inputs. Note 7: The DS92LV010A is a current mode device and only function with datasheet specification when a resistive load is applied between the driver outputs. Note 8: For receiver TRI-STATE
Output Differential Voltage
VODMagnitude Change 330mV
OD
Offset Voltage 1 1.35 1.65 V Offset Magnitude
OS
Change Output Short Circuit
Current Voltage Output High VID= +100 mV IOH= −400 µA R
Voltage Output Low IOL= 2.0 mA, VID= −100 mV 0.1 0.4 V
OL
Output Short Circuit
OS
Current Input Threshold High DE = 0V DO+/RI+,
TH
Input Threshold Low −100 mV
TL
I
Input Current DE = 0V, VIN= +2.4V, or 0V −20
IN
Minimum Input High
IH
Voltage
V
Maximum Input Low
IL
Voltage Input High Current VIN=VCCor 2.4V
I
IH
I
Input Low Current VIN= GND or 0.4V
IL
Input Diode Clamp
CL
Voltage Power Supply Current DE = RE = VCC,RL=27 V
CCZ
CC
Capacitance@BUS Pins
unless otherwise specified.
TL
includes probe and fixture capacitance.
L
= +3.3V or 5.0 V and TA= +25˚C, unless otherwise stated.
CC
®
delays, the switch is set to VCCfor t
RL=27Ω,
Figure 1
DO+/RI+,
145 270 390 mV
DO−/RI−
550mV
VO= 0V, DE = V
CC
OUT
−12 −20 mA
4.3 5.0 V Inputs Open 4.3 5.0 V Inputs Shorted 4.3 5.0 V Inputs
Terminated, R
V
= 0V, VID= +100 mV −35 −90 −130 mA
OUT
=27
L
4.3 5.0 V
+100 mV
DO−/RI−
±
1 +20 µA
V
= 0V, VIN= +2.4V, or 0V −20
CC
DIN, DE, RE
I
= −18 mA −1.5 −0.8 V
CLAMP
GND 0.8 V
CC
±
1 +20 µA
2.0 V
±1± ±1±
17 25 mA
CC
10 µA 10 µA
DE=RE=0V 610mA DE = 0V, RE = V
CC
38mA
DE=VCC,RE=0V,RL=27 20 25 mA
DO+/RI+,
5pF
DO−/RI−
OD,VID,VTH
>
2.0 kV EAT (0, 200 pF)>300V.
, and t
PZL
and to GND for t
PLZ
PZH
, and t
PHZ
.
and
V
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