Rainbow Electronics DS90LV001 User Manual

Page 1
DS90LV001
3.3V LVDS-LVDS Buffer
General Description
The DS90LV001 LVDS-LVDS Buffer takes an LVDS input signal and provides an LVDS output signal. In many large systems, signals are distributed across backplanes, and one of the limiting factors for system speed is the ’stub length’ or the distance between the transmission line and the untermi­nated receivers on individual cards. Although it is generally recognized that this distance should be as short as possible to maximize system performance, real-world packaging con­cerns often make it difficulttomakethestubs as short as the designer would like.
The DS90LV001, available in the LLP (Leadless Leadframe Package) package, will allow the receiver to be placed very close to the main transmission line, thus improving system performance.
A wide input dynamic range will allow the DS90LV001 to receive differential signals from LVPECL as well as LVDS sources. This will allow the device to also fill the role of an LVPECL-LVDS translator.
April 2001
An output enable pin is provided, which allows the user to place the LVDS output in TRI-STATE.
The DS90LV001 is offered in two package options, an 8 pin LLP and SOIC.
Features
n Single +3.3 V Supply n LVDS receiver inputs accept LVPECL signals n TRI-STATE outputs
<
n Receiver input threshold n Fast propagation delay of 1.4 ns (typ) n Low jitter 800 Mbps fully differential data path n 100 ps (typ) of pk-pk jitter with PRBS = 2
pattern at 800 Mbps
n Compatible with ANSI/TIA/EIA-644-A LVDS standard n 8 pin SOIC and space saving (70%) LLP package n Industrial Temperature Range
±
100 mV
23
−1 data
DS90LV001 3.3V LVDS-LVDS Buffer
Connection Diagram
Block Diagram
Top View
DS101338-5
Order Number DS90LV001TM, DS90LV001TLD
See NS Package Number M08A, LDA08A
DS101338-2
© 2001 National Semiconductor Corporation DS101338 www.national.com
Page 2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
DS90LV001
Distributors for availability and specifications.
Supply Voltage (V LVCMOS/LVTTL Input Voltage
(EN) LVDS Receiver Input Voltage
(IN+, IN−) −0.3V to +4V
) −0.3V to +4V
CC
−0.3V to (V
CC
+ 0.3V)
Maximum Package Power Dissipation at 25˚C
M Package 726 mW Derate M Package 5.8 mW/˚C above +25˚C LDA Package 2.44 W Derate LDA Package 19.49 mW/˚C above
ESD Ratings
(HBM, 1.5k, 100pF) 2.5kV (EIAJ, 0, 200pF) 250V
LVDS Driver Output Voltage (OUT+, OUT−) −0.3V to +4V
LVDS Output Short Circuit Current
Continuous
Junction Temperature +150˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature Range
Soldering (4 sec.) +260˚C
Recommended Operating Conditions
Min Typ Max Units
Supply Voltage (V Receiver Input Voltage 0 V Operating Free Air
) 3.0 3.3 3.6 V
CC
−40 +25 +85 ˚C
CC
Temperature
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Notes 2, 3)
Symbol Parameter Conditions Min Typ Max Units
LVCMOS/LVTTL DC SPECIFICATIONS (EN)
V
IH
V
IL
I
IH
I
IL
V
CL
LVDS OUTPUT DC SPECIFICATIONS (OUT)
V
OD
V
V
OS
V
I
OZ
I
OFF
I
OS
I
OSD
LVDS RECEIVER DC SPECIFICATIONS (IN)
V
TH
V
TL
V
CMR
I
IN
I
SUPPLY CURRENT
I
CCD
I
CCZ
High Level Input Voltage 2.0 V Low Level Input Voltage GND 0.8 V High Level Input Current VIN= 3.6V or 2.0V, VCC= 3.6V +7 +20 µA Low Level Input Current VIN= GND or 0.8V, VCC= 3.6V
±
1
Input Clamp Voltage ICL= −18 mA −0.6 −1.5 V
Differential Output Voltage RL= 100 250 325 450 mV Change in Magnitude of VODfor Complimentary
OD
Figure 1
and
Figure 2
Output States Offset Voltage RL= 100 1.080 1.19 1.375 V Change in Magnitude of VOSfor Complimentary
OS
Figure 1
Output States Output TRI-STATE Current EN = 0V, V Power-Off Leakage Current VCC= 0V, V Output Short Circuit Current (Note 4) EN = VCC,V
OUT=VCC
= 3.6V or GND
OUT
and V
OUT+
or GND
= 0V −16 −24 mA
OUT−
±
1
±
1
Differential Output Short Circuit Current (Note 4) EN = VCC,VOD= 0V −7 −12 mA
Differential Input High Threshold VCM= +0.05V, +1.2V or +3.25V 0 +100 mV Differential Input Low Threshold −100 0 mV Common Mode Voltage Range VID= 100mV, VCC= 3.3V 0.05 3.25 V Input Current VIN= +3.0V VCC= 3.6V or 0V
V
=0V
IN
Change in Magnitude of I
IN
IN
VIN= +3.0V VCC= 3.6V or 0V 1 6 µA V
=0V 1 6 µA
IN
± ±
1 1
Total Supply Current EN = VCC,RL= 100,CL=5pF 47 70 mA TRI-STATE Supply Current EN = 0V 22 35 mA
CC
±
10 µA
20 mV
20 mV
±
10 µA
±
10 µA
±
10 µA
±
10 µA
+25˚C
V
V
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Page 3
AC Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Note 3)
Symbol Parameter Conditions Min Typ Max Units
t
PHLD
t
PLHD
t
SKD1
t
SKD3
t
SKD4
t
LHT
t
HLT
t
PHZ
t
PLZ
t
PZH
t
PZL
t
DJ
t
RJ
Differential Propagation Delay High to Low RL= 100,CL= 5pF 1.0 1.4 2.0 ns Differential Propagation Delay Low to High Pulse Skew |t
PLHD−tPHLD
| (Note 5) (Note 6) 20 200 ps
Figure 3
and
Figure 4
1.0 1.4 2.0 ns
Part to Part Skew (Note 5) (Note 7) 0 60 ps Part to Part Skew (Note 5) (Note 8) 400 ps Rise Time (Note 5) RL= 100,CL= 5pF 200 320 450 ps Fall Time (Note 5)
Figure 3
and
Figure 5
200 310 450 ps Disable Time (Active High to Z) RL= 100,CL= 5pF 3 25 ns Disable Time (Active Low to Z)
Figure 6
and
Figure 7
325ns Enable Time (Z to Active High) 25 45 ns Enable Time (Z to Active Low) 25 45 ns LVDS Data Jitter, Deterministic (Peak-to-Peak)
(Note 9) LVDS Clock Jitter, Random (Note 9) VID= 300mV; VCM= 1.2V at 400MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V Note 3: All typical are given for V Note 4: Output short circuit current (I Note 5: The parameters are guaranteed by design. The limits are based on statistical analysis of the device performance over the PVT (process, voltage and
temperature) range. Note 6: t
the same channel. Note 7: t
applies to devices at the same V Note 8: t
operating temperature and voltage ranges, and across process distribution. t Note 9: The parameters are guaranteed by design. The limits are based on statistical analysis of the device performance over the PVT range with the following test
equipment setup: HP8133A(patternpulse generator), 5 feet of RG142B cable with DUT test board and HP83480A (digital scope mainframe) with HP83484A(50GHz scope module). The HP8133A with RG142B cable exhibit a t
,|t
SKD1
PLHD−tPHLD
, Part to Part Skew, is defined as the difference between the minimum and maximum specified differential propagation delays. This specification
SKD3
, Part to Part Skew, is the differential channel-to- channel skew of any event between devices. This specification applies to devices over recommended
SKD4
= +3.3V and TA= +25˚C, unless otherwise stated.
CC
) is specified as magnitude only, minus sign indicates direction only.
OS
|, is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of
and within 5˚C of each other within the operating temperature range.
CC
= 21ps and tRJ= 1.8ps.
DJ
VID= 300mV; PRBS = 223− 1 data;
= 1.2V at 800Mbps (NRZ)
V
CM
clock
is defined as |Max − Min| differential propagation delay.
SKD4
100 135 ps
2.2 3.5 ps
and VOD.
OD
DS90LV001
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DC Test Circuits
DS90LV001
DS101338-3
FIGURE 1. Differential Driver DC Test Circuit
DS101338-8
FIGURE 2. Differential Driver Full Load DC Test Circuit
AC Test Circuits and Timing Diagrams
FIGURE 3. LVDS Output Load
FIGURE 4. Propagation Delay Low-to-High and High-to-Low
DS101338-6
DS101338-7
FIGURE 5. LVDS Output Transition Time
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DS101338-9
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AC Test Circuits and Timing Diagrams (Continued)
FIGURE 6. TRI-STATE Delay Test Circuit
DS90LV001
DS101338-1
DS101338-4
FIGURE 7. Output active to TRI-STATE and TRI-STATE to active output time
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DS90LV001 Pin Description (SOIC and LLP)
Pin Name Pin # Input/Output Description
DS90LV001
GND 1 P Ground
IN − 2 I Inverting receiver LVDS input pin
IN+ 3 I Non-inverting receiver LVDS input pin NC 4 No Connect
V
CC
OUT+ 6 O Non-inverting driver LVDS output pin OUT - 7 O Inverting driver LVDS output pin
EN 8 I Enable pin. When EN is LOW, the driver is disabled and the LVDS
5 P Power Supply, 3.3V±0.3V.
outputs are in TRI-STATE. When EN is HIGH, the driver is enabled. LVCMOS/LVTTL levels.
Typical Applications
Backplane Stub-Hider Application
Cable Repeater Application
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DS101338-11
DS101338-10
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Application Information
Mode of Operation:
The DS90LV001 can be used as a ’stub-hider.’ In many systems, signals are distributed across backplanes, and one of the limiting factors for system speed is the ’stub length’ or the distance between the transmission line and the untermi­nated receivers on the individual cards. Although it is gener­ally recognized that this distance should be as short as possible to maximize system performance, real-world pack­aging concerns and PCB designs often make it difficult to make the stubs as short as the designer would like. The DS90LV001, available in the LLP (Leadless Leadframe Package) package, can improve system performance by allowing the receiver to be placed very close to the main transmission line either on the backplane itself or very close
to the connector on the card. Longer traces to the LVDS receiver may be placed after the DS90LV001. This very small LLP package is a 75% space savings over the SOIC package.
Input failsafe:
The receiver inputs of the DS90LV001 do not have internal failsafe biasing. For point-to-point and multidrop applications with a single source, failsafe biasing may not be required. When the driver is off, the link is in-active. If failsafe biasing is required, this can be accomplished with external high value resistors. Using the equations in the LVDS Owner’s Manual Chapter 4, the IN+ should be pull to V
(3.3V) with
CC
20kand the IN− should be pull to GND with 12k. This provides a slight positive differential bias, and sets a known HIGH state on the link with a minimum amount of distortion.
DS90LV001
PCB Layout and Power System Bypass:
Circuit board layout and stack-up for the DS90LV001 should be designed to provide noise-free power to the device. Good layout practice also will separate high frequency or high level inputs and outputs to minimize unwanted stray noise pickup, feedback and interference. Power system performance may be greatly improved by using thin dielectrics (4 to 10 mils) for power/ground sandwiches. This increases the intrinsic ca­pacitance of the PCB power system which improves power supply filtering, especially at high frequencies, and makes the value and placement of external bypass capacitors less critical. External bypass capacitors should include both RF ceramic and tantalum electrolytic types. RF capacitors may use values in the range 0.01 µF to 0.1 µF. Tantalum capaci­tors may be in the range 2.2 µF to 10 µF. Voltage rating for tantalum capacitors should be at least 5X the power supply voltage being used. It is recommended practice to use two vias at each power pin of the DS90LV001 as well as all RF bypass capacitor terminals. Dual vias reduce the intercon­nect inductance by up to half, thereby reducing interconnect inductance and extending the effective frequency range of the bypass components.
DS101338-15
The outer layers of the PCB may be flooded with additional ground plane. These planes will improve shielding and iso­lation as well as increase the intrinsic capacitance of the power supply plane system. Naturally, to be effective, these planes must be tied to the ground supply plane at frequent intervals with vias. Frequent via placement also improves signal integrity on signal transmission lines by providing short paths for image currents which reduces signal distor­tion. The planes should be pulled back from all transmission lines and component mounting pads a distance equal to the width of the widest transmission line or the thickness of the dielectric separating the transmission line from the internal power or ground plane(s) whichever is greater. Doing so minimizes effects on transmission line impedances and re­duces unwanted parasitic capacitances at component mounting pads.
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Typical Performance Curves
Output High Voltage vs Power Supply Voltage
DS90LV001
Output Short Circuit Current vs Power Supply Voltage
DS101338-16
Output Low Voltage vs Power Supply Voltage
DS101338-17
Differential Output Short Circuit Current vs Power Supply Voltage
DS101338-18
Output TRI-STATE Current vs Power Supply Voltage
DS101338-20
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DS101338-19
Offset Voltage vs Power Supply Voltage
DS101338-21
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Typical Performance Curves (Continued)
DS90LV001
Differential Output Voltage vs Power Supply Voltage
Power Supply Current vs Frequency
DS101338-22
Differential Output Voltage vs Load Resistor
DS101338-23
Power Supply Current vs Power Supply Voltage
TRI-STATE Power Supply Current vs Power Supply Voltage
DS101338-24
DS101338-26
DS101338-25
Differential Transition Voltage vs Power Supply Voltage
DS101338-27
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Typical Performance Curves (Continued)
Differential Propagation Delay vs
DS90LV001
Power Supply Voltage
Differential Skew vs Power Supply Voltage
DS101338-28
Differential Propagation Delay vs Ambient Temperature
DS101338-36
Differential Skew vs Ambient Temperature
DS101338-29
Transition Time vs Power Supply Voltage
DS101338-30
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Transition Time vs Ambient Temperature
DS101338-37
DS101338-38
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Typical Performance Curves (Continued)
DS90LV001
Differential Propagation Delay vs Differential Input Voltage
DS101338-31
Peak-to-Peak Output Jitter at VCM= 0.4V vs Differential Input Voltage
Differential Propagation Delay vs Common-Mode Voltage
DS101338-32
Peak-to-Peak Output Jitter at VCM= 2.9V vs Differential Input Voltage
DS101338-33
Peak-to-Peak Output Jitter at VCM= 1.2V vs Differential Input Voltage
DS101338-34
DS101338-35
Peak-to-Peak Output Jitter at VCM= 1.2V vs Ambient Temperature
DS101338-39
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Physical Dimensions inches (millimeters) unless otherwise noted
DS90LV001
Order Number DS90LV001TM
See NS Package Number M08A
Order Number DS90LV001TLD
See NS Package Number LDA08A
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Page 13
Notes
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
labeling, can be reasonably expected to result in a significant injury to the user.
National Semiconductor Corporation
Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com
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