The DS90LV001 LVDS-LVDS Buffer takes an LVDS input
signal and provides an LVDS output signal. In many large
systems, signals are distributed across backplanes, and one
of the limiting factors for system speed is the ’stub length’ or
the distance between the transmission line and the unterminated receivers on individual cards. Although it is generally
recognized that this distance should be as short as possible
to maximize system performance, real-world packaging concerns often make it difficulttomakethestubs as short as the
designer would like.
The DS90LV001, available in the LLP (Leadless Leadframe
Package) package, will allow the receiver to be placed very
close to the main transmission line, thus improving system
performance.
A wide input dynamic range will allow the DS90LV001 to
receive differential signals from LVPECL as well as LVDS
sources. This will allow the device to also fill the role of an
LVPECL-LVDS translator.
April 2001
An output enable pin is provided, which allows the user to
place the LVDS output in TRI-STATE.
The DS90LV001 is offered in two package options, an 8 pin
LLP and SOIC.
Features
n Single +3.3 V Supply
n LVDS receiver inputs accept LVPECL signals
n TRI-STATE outputs
<
n Receiver input threshold
n Fast propagation delay of 1.4 ns (typ)
n Low jitter 800 Mbps fully differential data path
n 100 ps (typ) of pk-pk jitter with PRBS = 2
pattern at 800 Mbps
n Compatible with ANSI/TIA/EIA-644-A LVDS standard
n 8 pin SOIC and space saving (70%) LLP package
n Industrial Temperature Range
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
DS90LV001
Distributors for availability and specifications.
Supply Voltage (V
LVCMOS/LVTTL Input Voltage
(EN)
LVDS Receiver Input Voltage
(IN+, IN−)−0.3V to +4V
)−0.3V to +4V
CC
−0.3V to (V
CC
+ 0.3V)
Maximum Package Power Dissipation at 25˚C
M Package726 mW
Derate M Package5.8 mW/˚C above +25˚C
LDA Package2.44 W
Derate LDA Package19.49 mW/˚C above
ESD Ratings
(HBM, 1.5kΩ, 100pF)≥2.5kV
(EIAJ, 0Ω, 200pF)≥250V
LVDS Driver Output Voltage
(OUT+, OUT−)−0.3V to +4V
LVDS Output Short Circuit
Current
Continuous
Junction Temperature+150˚C
Storage Temperature Range−65˚C to +150˚C
Lead Temperature Range
Soldering (4 sec.)+260˚C
Recommended Operating
Conditions
MinTypMaxUnits
Supply Voltage (V
Receiver Input Voltage0V
Operating Free Air
)3.03.33.6V
CC
−40+25+85˚C
CC
Temperature
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Notes 2, 3)
SymbolParameterConditionsMinTypMaxUnits
LVCMOS/LVTTL DC SPECIFICATIONS (EN)
V
IH
V
IL
I
IH
I
IL
V
CL
LVDS OUTPUT DC SPECIFICATIONS (OUT)
V
OD
∆V
V
OS
∆V
I
OZ
I
OFF
I
OS
I
OSD
LVDS RECEIVER DC SPECIFICATIONS (IN)
V
TH
V
TL
V
CMR
I
IN
∆I
SUPPLY CURRENT
I
CCD
I
CCZ
High Level Input Voltage2.0V
Low Level Input VoltageGND0.8V
High Level Input CurrentVIN= 3.6V or 2.0V, VCC= 3.6V+7+20µA
Low Level Input CurrentVIN= GND or 0.8V, VCC= 3.6V
±
1
Input Clamp VoltageICL= −18 mA−0.6−1.5V
Differential Output VoltageRL= 100Ω250325450mV
Change in Magnitude of VODfor Complimentary
OD
Figure 1
and
Figure 2
Output States
Offset VoltageRL= 100Ω1.0801.191.375V
Change in Magnitude of VOSfor Complimentary
OS
Figure 1
Output States
Output TRI-STATE CurrentEN = 0V, V
Power-Off Leakage CurrentVCC= 0V, V
Output Short Circuit Current (Note 4)EN = VCC,V
OUT=VCC
= 3.6V or GND
OUT
and V
OUT+
or GND
= 0V−16−24mA
OUT−
±
1
±
1
Differential Output Short Circuit Current (Note 4)EN = VCC,VOD= 0V−7−12mA
Differential Input High ThresholdVCM= +0.05V, +1.2V or +3.25V0+100mV
Differential Input Low Threshold−1000mV
Common Mode Voltage RangeVID= 100mV, VCC= 3.3V0.053.25V
Input CurrentVIN= +3.0VVCC= 3.6V or 0V
Over recommended operating supply and temperature ranges unless otherwise specified. (Note 3)
SymbolParameterConditionsMinTypMaxUnits
t
PHLD
t
PLHD
t
SKD1
t
SKD3
t
SKD4
t
LHT
t
HLT
t
PHZ
t
PLZ
t
PZH
t
PZL
t
DJ
t
RJ
Differential Propagation Delay High to LowRL= 100Ω,CL= 5pF1.01.42.0ns
Differential Propagation Delay Low to High
Pulse Skew |t
PLHD−tPHLD
| (Note 5) (Note 6)20200ps
Figure 3
and
Figure 4
1.01.42.0ns
Part to Part Skew (Note 5) (Note 7)060ps
Part to Part Skew (Note 5) (Note 8)400ps
Rise Time (Note 5)RL= 100Ω,CL= 5pF200320450ps
Fall Time (Note 5)
Figure 3
and
Figure 5
200310450ps
Disable Time (Active High to Z)RL= 100Ω,CL= 5pF325ns
Disable Time (Active Low to Z)
Figure 6
and
Figure 7
325ns
Enable Time (Z to Active High)2545ns
Enable Time (Z to Active Low)2545ns
LVDS Data Jitter, Deterministic (Peak-to-Peak)
(Note 9)
LVDS Clock Jitter, Random (Note 9)VID= 300mV; VCM= 1.2V at 400MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V
Note 3: All typical are given for V
Note 4: Output short circuit current (I
Note 5: The parameters are guaranteed by design. The limits are based on statistical analysis of the device performance over the PVT (process, voltage and
temperature) range.
Note 6: t
the same channel.
Note 7: t
applies to devices at the same V
Note 8: t
operating temperature and voltage ranges, and across process distribution. t
Note 9: The parameters are guaranteed by design. The limits are based on statistical analysis of the device performance over the PVT range with the following test
equipment setup: HP8133A(patternpulse generator), 5 feet of RG142B cable with DUT test board and HP83480A (digital scope mainframe) with HP83484A(50GHz
scope module). The HP8133A with RG142B cable exhibit a t
,|t
SKD1
PLHD−tPHLD
, Part to Part Skew, is defined as the difference between the minimum and maximum specified differential propagation delays. This specification
SKD3
, Part to Part Skew, is the differential channel-to- channel skew of any event between devices. This specification applies to devices over recommended
SKD4
= +3.3V and TA= +25˚C, unless otherwise stated.
CC
) is specified as magnitude only, minus sign indicates direction only.
OS
|, is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of
and within 5˚C of each other within the operating temperature range.
CC
= 21ps and tRJ= 1.8ps.
DJ
VID= 300mV; PRBS = 223− 1 data;
= 1.2V at 800Mbps (NRZ)
V
CM
clock
is defined as |Max − Min| differential propagation delay.
SKD4
100135ps
2.23.5ps
and ∆VOD.
OD
DS90LV001
www.national.com3
Page 4
DC Test Circuits
DS90LV001
DS101338-3
FIGURE 1. Differential Driver DC Test Circuit
DS101338-8
FIGURE 2. Differential Driver Full Load DC Test Circuit
AC Test Circuits and Timing Diagrams
FIGURE 3. LVDS Output Load
FIGURE 4. Propagation Delay Low-to-High and High-to-Low
DS101338-6
DS101338-7
FIGURE 5. LVDS Output Transition Time
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DS101338-9
Page 5
AC Test Circuits and Timing Diagrams (Continued)
FIGURE 6. TRI-STATE Delay Test Circuit
DS90LV001
DS101338-1
DS101338-4
FIGURE 7. Output active to TRI-STATE and TRI-STATE to active output time
EN8IEnable pin. When EN is LOW, the driver is disabled and the LVDS
5PPower Supply, 3.3V±0.3V.
outputs are in TRI-STATE. When EN is HIGH, the driver is enabled.
LVCMOS/LVTTL levels.
Typical Applications
Backplane Stub-Hider Application
Cable Repeater Application
www.national.com6
DS101338-11
DS101338-10
Page 7
Application Information
Mode of Operation:
The DS90LV001 can be used as a ’stub-hider.’ In many
systems, signals are distributed across backplanes, and one
of the limiting factors for system speed is the ’stub length’ or
the distance between the transmission line and the unterminated receivers on the individual cards. Although it is generally recognized that this distance should be as short as
possible to maximize system performance, real-world packaging concerns and PCB designs often make it difficult to
make the stubs as short as the designer would like. The
DS90LV001, available in the LLP (Leadless Leadframe
Package) package, can improve system performance by
allowing the receiver to be placed very close to the main
transmission line either on the backplane itself or very close
to the connector on the card. Longer traces to the LVDS
receiver may be placed after the DS90LV001. This very
small LLP package is a 75% space savings over the SOIC
package.
Input failsafe:
The receiver inputs of the DS90LV001 do not have internal
failsafe biasing. For point-to-point and multidrop applications
with a single source, failsafe biasing may not be required.
When the driver is off, the link is in-active. If failsafe biasing
is required, this can be accomplished with external high
value resistors. Using the equations in the LVDS Owner’s
Manual Chapter 4, the IN+ should be pull to V
(3.3V) with
CC
20kΩ and the IN− should be pull to GND with 12kΩ. This
provides a slight positive differential bias, and sets a known
HIGH state on the link with a minimum amount of distortion.
DS90LV001
PCB Layout and Power System Bypass:
Circuit board layout and stack-up for the DS90LV001 should
be designed to provide noise-free power to the device. Good
layout practice also will separate high frequency or high level
inputs and outputs to minimize unwanted stray noise pickup,
feedback and interference. Power system performance may
be greatly improved by using thin dielectrics (4 to 10 mils) for
power/ground sandwiches. This increases the intrinsic capacitance of the PCB power system which improves power
supply filtering, especially at high frequencies, and makes
the value and placement of external bypass capacitors less
critical. External bypass capacitors should include both RF
ceramic and tantalum electrolytic types. RF capacitors may
use values in the range 0.01 µF to 0.1 µF. Tantalum capacitors may be in the range 2.2 µF to 10 µF. Voltage rating for
tantalum capacitors should be at least 5X the power supply
voltage being used. It is recommended practice to use two
vias at each power pin of the DS90LV001 as well as all RF
bypass capacitor terminals. Dual vias reduce the interconnect inductance by up to half, thereby reducing interconnect
inductance and extending the effective frequency range of
the bypass components.
DS101338-15
The outer layers of the PCB may be flooded with additional
ground plane. These planes will improve shielding and isolation as well as increase the intrinsic capacitance of the
power supply plane system. Naturally, to be effective, these
planes must be tied to the ground supply plane at frequent
intervals with vias. Frequent via placement also improves
signal integrity on signal transmission lines by providing
short paths for image currents which reduces signal distortion. The planes should be pulled back from all transmission
lines and component mounting pads a distance equal to the
width of the widest transmission line or the thickness of the
dielectric separating the transmission line from the internal
power or ground plane(s) whichever is greater. Doing so
minimizes effects on transmission line impedances and reduces unwanted parasitic capacitances at component
mounting pads.
There are more common practices which should be followed
when designing PCBs for LVDS signaling. Please see application note AN-1108 for guidelines. In addition, application
note AN-1187 has additional information specifically related
to LLP recommendations.
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Page 8
Typical Performance Curves
Output High Voltage vs
Power Supply Voltage
DS90LV001
Output Short Circuit Current vs
Power Supply Voltage
DS101338-16
Output Low Voltage vs
Power Supply Voltage
DS101338-17
Differential Output Short Circuit Current vs
Power Supply Voltage
DS101338-18
Output TRI-STATE Current vs
Power Supply Voltage
DS101338-20
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DS101338-19
Offset Voltage vs
Power Supply Voltage
DS101338-21
Page 9
Typical Performance Curves (Continued)
DS90LV001
Differential Output Voltage
vs Power Supply Voltage
Power Supply Current
vs Frequency
DS101338-22
Differential Output Voltage
vs Load Resistor
DS101338-23
Power Supply Current vs
Power Supply Voltage
TRI-STATE Power Supply Current vs
Power Supply Voltage
DS101338-24
DS101338-26
DS101338-25
Differential Transition Voltage vs
Power Supply Voltage
DS101338-27
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Page 10
Typical Performance Curves (Continued)
Differential Propagation Delay vs
DS90LV001
Power Supply Voltage
Differential Skew vs
Power Supply Voltage
DS101338-28
Differential Propagation Delay vs
Ambient Temperature
DS101338-36
Differential Skew vs
Ambient Temperature
DS101338-29
Transition Time vs
Power Supply Voltage
DS101338-30
www.national.com10
Transition Time vs
Ambient Temperature
DS101338-37
DS101338-38
Page 11
Typical Performance Curves (Continued)
DS90LV001
Differential Propagation Delay vs
Differential Input Voltage
DS101338-31
Peak-to-Peak Output Jitter at VCM= 0.4V vs
Differential Input Voltage
Differential Propagation Delay vs
Common-Mode Voltage
DS101338-32
Peak-to-Peak Output Jitter at VCM= 2.9V vs
Differential Input Voltage
DS101338-33
Peak-to-Peak Output Jitter at VCM= 1.2V vs
Differential Input Voltage
DS101338-34
DS101338-35
Peak-to-Peak Output Jitter at VCM= 1.2V vs
Ambient Temperature
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
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accordance with instructions for use provided in the
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support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
labeling, can be reasonably expected to result in a
significant injury to the user.