Rainbow Electronics DS90LV001 User Manual

DS90LV001
3.3V LVDS-LVDS Buffer
General Description
The DS90LV001 LVDS-LVDS Buffer takes an LVDS input signal and provides an LVDS output signal. In many large systems, signals are distributed across backplanes, and one of the limiting factors for system speed is the ’stub length’ or the distance between the transmission line and the untermi­nated receivers on individual cards. Although it is generally recognized that this distance should be as short as possible to maximize system performance, real-world packaging con­cerns often make it difficulttomakethestubs as short as the designer would like.
The DS90LV001, available in the LLP (Leadless Leadframe Package) package, will allow the receiver to be placed very close to the main transmission line, thus improving system performance.
A wide input dynamic range will allow the DS90LV001 to receive differential signals from LVPECL as well as LVDS sources. This will allow the device to also fill the role of an LVPECL-LVDS translator.
April 2001
An output enable pin is provided, which allows the user to place the LVDS output in TRI-STATE.
The DS90LV001 is offered in two package options, an 8 pin LLP and SOIC.
Features
n Single +3.3 V Supply n LVDS receiver inputs accept LVPECL signals n TRI-STATE outputs
<
n Receiver input threshold n Fast propagation delay of 1.4 ns (typ) n Low jitter 800 Mbps fully differential data path n 100 ps (typ) of pk-pk jitter with PRBS = 2
pattern at 800 Mbps
n Compatible with ANSI/TIA/EIA-644-A LVDS standard n 8 pin SOIC and space saving (70%) LLP package n Industrial Temperature Range
±
100 mV
23
−1 data
DS90LV001 3.3V LVDS-LVDS Buffer
Connection Diagram
Block Diagram
Top View
DS101338-5
Order Number DS90LV001TM, DS90LV001TLD
See NS Package Number M08A, LDA08A
DS101338-2
© 2001 National Semiconductor Corporation DS101338 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
DS90LV001
Distributors for availability and specifications.
Supply Voltage (V LVCMOS/LVTTL Input Voltage
(EN) LVDS Receiver Input Voltage
(IN+, IN−) −0.3V to +4V
) −0.3V to +4V
CC
−0.3V to (V
CC
+ 0.3V)
Maximum Package Power Dissipation at 25˚C
M Package 726 mW Derate M Package 5.8 mW/˚C above +25˚C LDA Package 2.44 W Derate LDA Package 19.49 mW/˚C above
ESD Ratings
(HBM, 1.5k, 100pF) 2.5kV (EIAJ, 0, 200pF) 250V
LVDS Driver Output Voltage (OUT+, OUT−) −0.3V to +4V
LVDS Output Short Circuit Current
Continuous
Junction Temperature +150˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature Range
Soldering (4 sec.) +260˚C
Recommended Operating Conditions
Min Typ Max Units
Supply Voltage (V Receiver Input Voltage 0 V Operating Free Air
) 3.0 3.3 3.6 V
CC
−40 +25 +85 ˚C
CC
Temperature
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Notes 2, 3)
Symbol Parameter Conditions Min Typ Max Units
LVCMOS/LVTTL DC SPECIFICATIONS (EN)
V
IH
V
IL
I
IH
I
IL
V
CL
LVDS OUTPUT DC SPECIFICATIONS (OUT)
V
OD
V
V
OS
V
I
OZ
I
OFF
I
OS
I
OSD
LVDS RECEIVER DC SPECIFICATIONS (IN)
V
TH
V
TL
V
CMR
I
IN
I
SUPPLY CURRENT
I
CCD
I
CCZ
High Level Input Voltage 2.0 V Low Level Input Voltage GND 0.8 V High Level Input Current VIN= 3.6V or 2.0V, VCC= 3.6V +7 +20 µA Low Level Input Current VIN= GND or 0.8V, VCC= 3.6V
±
1
Input Clamp Voltage ICL= −18 mA −0.6 −1.5 V
Differential Output Voltage RL= 100 250 325 450 mV Change in Magnitude of VODfor Complimentary
OD
Figure 1
and
Figure 2
Output States Offset Voltage RL= 100 1.080 1.19 1.375 V Change in Magnitude of VOSfor Complimentary
OS
Figure 1
Output States Output TRI-STATE Current EN = 0V, V Power-Off Leakage Current VCC= 0V, V Output Short Circuit Current (Note 4) EN = VCC,V
OUT=VCC
= 3.6V or GND
OUT
and V
OUT+
or GND
= 0V −16 −24 mA
OUT−
±
1
±
1
Differential Output Short Circuit Current (Note 4) EN = VCC,VOD= 0V −7 −12 mA
Differential Input High Threshold VCM= +0.05V, +1.2V or +3.25V 0 +100 mV Differential Input Low Threshold −100 0 mV Common Mode Voltage Range VID= 100mV, VCC= 3.3V 0.05 3.25 V Input Current VIN= +3.0V VCC= 3.6V or 0V
V
=0V
IN
Change in Magnitude of I
IN
IN
VIN= +3.0V VCC= 3.6V or 0V 1 6 µA V
=0V 1 6 µA
IN
± ±
1 1
Total Supply Current EN = VCC,RL= 100,CL=5pF 47 70 mA TRI-STATE Supply Current EN = 0V 22 35 mA
CC
±
10 µA
20 mV
20 mV
±
10 µA
±
10 µA
±
10 µA
±
10 µA
+25˚C
V
V
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AC Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Note 3)
Symbol Parameter Conditions Min Typ Max Units
t
PHLD
t
PLHD
t
SKD1
t
SKD3
t
SKD4
t
LHT
t
HLT
t
PHZ
t
PLZ
t
PZH
t
PZL
t
DJ
t
RJ
Differential Propagation Delay High to Low RL= 100,CL= 5pF 1.0 1.4 2.0 ns Differential Propagation Delay Low to High Pulse Skew |t
PLHD−tPHLD
| (Note 5) (Note 6) 20 200 ps
Figure 3
and
Figure 4
1.0 1.4 2.0 ns
Part to Part Skew (Note 5) (Note 7) 0 60 ps Part to Part Skew (Note 5) (Note 8) 400 ps Rise Time (Note 5) RL= 100,CL= 5pF 200 320 450 ps Fall Time (Note 5)
Figure 3
and
Figure 5
200 310 450 ps Disable Time (Active High to Z) RL= 100,CL= 5pF 3 25 ns Disable Time (Active Low to Z)
Figure 6
and
Figure 7
325ns Enable Time (Z to Active High) 25 45 ns Enable Time (Z to Active Low) 25 45 ns LVDS Data Jitter, Deterministic (Peak-to-Peak)
(Note 9) LVDS Clock Jitter, Random (Note 9) VID= 300mV; VCM= 1.2V at 400MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V Note 3: All typical are given for V Note 4: Output short circuit current (I Note 5: The parameters are guaranteed by design. The limits are based on statistical analysis of the device performance over the PVT (process, voltage and
temperature) range. Note 6: t
the same channel. Note 7: t
applies to devices at the same V Note 8: t
operating temperature and voltage ranges, and across process distribution. t Note 9: The parameters are guaranteed by design. The limits are based on statistical analysis of the device performance over the PVT range with the following test
equipment setup: HP8133A(patternpulse generator), 5 feet of RG142B cable with DUT test board and HP83480A (digital scope mainframe) with HP83484A(50GHz scope module). The HP8133A with RG142B cable exhibit a t
,|t
SKD1
PLHD−tPHLD
, Part to Part Skew, is defined as the difference between the minimum and maximum specified differential propagation delays. This specification
SKD3
, Part to Part Skew, is the differential channel-to- channel skew of any event between devices. This specification applies to devices over recommended
SKD4
= +3.3V and TA= +25˚C, unless otherwise stated.
CC
) is specified as magnitude only, minus sign indicates direction only.
OS
|, is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of
and within 5˚C of each other within the operating temperature range.
CC
= 21ps and tRJ= 1.8ps.
DJ
VID= 300mV; PRBS = 223− 1 data;
= 1.2V at 800Mbps (NRZ)
V
CM
clock
is defined as |Max − Min| differential propagation delay.
SKD4
100 135 ps
2.2 3.5 ps
and VOD.
OD
DS90LV001
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DC Test Circuits
DS90LV001
DS101338-3
FIGURE 1. Differential Driver DC Test Circuit
DS101338-8
FIGURE 2. Differential Driver Full Load DC Test Circuit
AC Test Circuits and Timing Diagrams
FIGURE 3. LVDS Output Load
FIGURE 4. Propagation Delay Low-to-High and High-to-Low
DS101338-6
DS101338-7
FIGURE 5. LVDS Output Transition Time
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DS101338-9
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